The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Mark S. Goorsky sits on this spectrum.
This scientist: 451 publications — 82nd percentile
82% of scientists in this discipline score the same or lower.
The last bar groups every scientist with 1,163 publications or more.
The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Mark S. Goorsky sits on this spectrum.
This scientist: 52 D-Index — 27th percentile
27% of scientists in this discipline score the same or lower.
The last bar groups every scientist with 165 D-Index or more.
Mark S. Goorsky is affiliated with the University of California, Los Angeles in the United States. Their research primarily spans the fields of engineering and materials science, with significant emphasis on materials chemistry and electrical and electronic engineering. Their work also intersects with condensed matter physics, biomedical engineering, and electronic, optical, and magnetic materials.
The scientist's research topics cover a range of specialized areas, including:
Recent publications by Mark S. Goorsky include:
The scientist frequently collaborates with others in their field. Notable co-authors who have worked with them extensively include Michael E. Liao, Kenny Huynh, Yekan Wang, Samuel Graham, and Lezli Matto.
Mark S. Goorsky's research contributions are often published in venues such as:
This publication record reflects a consistent focus on applied physics and materials-based research, aligning with the scientist's main and subfields of study.
Qi Chen;Huanping Zhou;Yihao Fang;Adam Z. Stieg
Theodorian Borca-Tasciuc;Weili Liu;Jianlin Liu;Taofang Zeng
Jingjing Xue;Jin-Wook Lee;Zhenghong Dai;Rui Wang
Shaun Tan;Shaun Tan;Tianyi Huang;Tianyi Huang;Ilhan Yavuz;Rui Wang
You Seung Rim;Yang Micheal Yang;Sang-Hoon Bae;Huajun Chen
S. S. Iyer;K. Eberl;M. S. Goorsky;F. K. LeGoues
T. J. de Lyon;J. M. Woodall;M. S. Goorsky;P. D. Kirchner
Yazeed Alaskar;Yazeed Alaskar;Shamsul Arafin;Darshana Wickramaratne;Mark A. Zurbuchen
Luke Yates;Jonathan Anderson;Xing Gu;Cathy Lee
Shafkat Bin Hoque;Yee Rui Koh;Jeffrey L Braun;Abdullah Mamun
Aditya Sood;Ramez Cheaito;Tingyu Bai;Heungdong Kwon
Zhe Cheng;Yee Rui Koh;Abdullah Mamun;Jingjing Shi
Jin-Wook Lee;Shaun Tan;Tae-Hee Han;Tae-Hee Han;Rui Wang
M. Schieber;T.E. Schlesinger;R.B. James;H. Hermon
D. W. Song;W.-N. Shen;B. Dunn;C. D. Moore
J. L. Liu;C. D. Moore;G. D. U’Ren;Y. H. Luo
Zhe Cheng;Virginia D. Wheeler;Tingyu Bai;Jingjing Shi
David Feiler;R.Stanley Williams;A.Alec Talin;Hojun Yoon
Adeel A. Bajwa;SivaChandra Jangam;Saptadeep Pal;Niteesh Marathe
Zhe Cheng;Fengwen Mu;Tiangui You;Wenhui Xu
Li Gao;Robyn L. Woo;Baolai Liang;Marta Pozuelo
S. D. Hersee;J. Ramer;K. Zheng;C. Kranenberg
R. B. James;B. Brunett;B. Brunett;J. Heffelfinger;J. Van Scyoc
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