World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
53
Citations
11526
World Ranking
2396
National Ranking
930

Materials Science

D-Index
52
Citations
10936
World Ranking
9500
National Ranking
2296

Subramanian S. Iyer publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Subramanian S. Iyer sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 339 publications — 65th percentile

65% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Subramanian S. Iyer D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Subramanian S. Iyer sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 53 D-Index — 66th percentile

66% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Research.com Recognitions

  • 2017 - Fellow, National Academy of Inventors
  • 2012 - IEEE Daniel E. Noble Award for Emerging Technologies “For the development and implementation of embedded DRAM technologies.”
  • 1995 - IEEE Fellow For contributions to SiGe heterojunction devices and self-aligned silicides.

Overview

Subramanian S. Iyer is affiliated with the University of California, Los Angeles in the United States, with a research focus primarily in the field of Engineering. Their specialization lies within Electrical and Electronic Engineering, complemented by work in Hardware and Architecture, Biomedical Engineering, Computer Networks and Communications, and Electronic, Optical and Magnetic Materials.

The recent scholarly output of this researcher includes studies published in notable venues. Some of the recent papers are:

  • Silicon-Interconnect Fabric for Fine-Pitch (≤10 μm) Heterogeneous Integration, 2021, IEEE Transactions on Components Packaging and Manufacturing Technology
  • Total Ionizing Dose Responses of 22-nm FDSOI and 14-nm Bulk FinFET Charge-Trap Transistors, 2021, IEEE Transactions on Nuclear Science
  • Mechanism and Process Window Study for Die-to-Wafer (D2W) Hybrid Bonding, 2021, ECS Journal of Solid State Science and Technology
  • Recess Effect Study and Process Optimization of Sub-10 μm Pitch Die-to-wafer Hybrid Bonding, 2022, 2022 IEEE 72nd Electronic Components and Technology Conference (ECTC)
  • A Signaling Figure of Merit (s-FoM) for Advanced Packaging, 2020, IEEE Transactions on Components Packaging and Manufacturing Technology

The frequent publication venues where this researcher disseminates their findings include:

  • 2022 IEEE 72nd Electronic Components and Technology Conference (ECTC)
  • IEEE Transactions on Components Packaging and Manufacturing Technology
  • IEEE Transactions on Nuclear Science
  • ECS Journal of Solid State Science and Technology
  • Science

The main topics covered in the research are:

  • 3D IC and TSV technologies
  • Electronic Packaging and Soldering Technologies
  • Semiconductor materials and devices
  • Advancements in Semiconductor Devices and Circuit Design
  • Advanced Memory and Neural Computing
  • Ferroelectric and Negative Capacitance Devices
  • Interconnection Networks and Systems

Collaborations have frequently involved several co-authors, demonstrating interdisciplinary and cross-collaborative work. Prominent collaborators include Haoxiang Ren, Yu-Tao Yang, Guangqi Ouyang, Krutikesh Sahoo, and Randall Irwin.

Research contributions have been recognized by professional bodies with several awards. Subramanian S. Iyer has been named a Fellow of the National Academy of Inventors in 2017. Earlier distinctions include the IEEE Daniel E. Noble Award for Emerging Technologies in 2012, awarded for the development and implementation of embedded DRAM technologies. In 1995, they were also named an IEEE Fellow for contributions to SiGe heterojunction devices and self-aligned silicides.

Best Publications

  • Heterojunction bipolar transistors using Si-Ge alloys

    S.S. Iyer;G.L. Patton;J.M.C. Stork;B.S. Meyerson

  • Production of substrate for tensilely strained semiconductor

    Bruce A. Ek;Subramanian Srikanteswara Iyer;Philip Michael Pitner;Adrian R. Powell

  • Light Emission from Silicon

    S. S. Iyer;Y. H. Xie

  • Growth and strain compensation effects in the ternary Si1-x-yGexCy alloy system

    K. Eberl;S. S. Iyer;S. Zollner;J. C. Tsang

  • 3d integrated circuits structure

    Mukta G. Farooq;Subramanian S. Iyer;Steven J. Koester;Huilong Zhu

  • Silicon-germanium base heterojunction bipolar transistors by molecular beam epitaxy

    G.L. Patton;S.S. Iyer;S.L. Delage;S. Tiwari

  • New approach to the growth of low dislocation relaxed SiGe material

    A. R. Powell;S. S. Iyer;F. K. LeGoues

  • Electrically programmable fuse (eFUSE) using electromigration in silicides

    C. Kothandaraman;S.K. Iyer;S.S. Iyer

  • DOUBLE POLYSILICON PROCESS FOR PROVIDING SINGLE CHIP HIGH PERFORMANCE LOGIC AND COMPACT EMBEDDED MEMORY STRUCTURE AND RESULTING CHIP STRUCTURE

    Agnello Paul D;Chen Bomy A;Crowder Scott W;Divakaruni Ramachandra

  • Single-etch stop process for the manufacture of silicon-on-insulator wafers

    Subramanian S. Iyer;Emil Baran;Mark L. Mastroianni;Robert A. Craven

  • Electrically Programmable Fuse (eFUSE): From Memory Redundancy to Autonomic Chips

    N. Robson;J. Safran;C. Kothandaraman;A. Cestero

  • Surface-stress-induced order in SiGe alloy films.

    F. K. LeGoues;V. P. Kesan;S. S. Iyer;J. Tersoff

  • Heterogeneous Integration for Performance and Scaling

    Subramanian S. Iyer

  • Sharp profiles with high and low doping levels in silicon grown by molecular beam epitaxy

    S. S. Iyer;R. A. Metzger;F. G. Allen

  • Growth temperature dependence of interfacial abruptness in Si/Ge heteroepitaxy studied by Raman spectroscopy and medium energy ion scattering

    S. S. Iyer;J. C. Tsang;M. W. Copel;P. R. Pukite

  • Synthesis of Si1−yCy alloys by molecular beam epitaxy

    S. S. Iyer;K. Eberl;M. S. Goorsky;F. K. LeGoues

  • 3D integrated circuit device fabrication with precisely controllable substrate removal

    Mukta G. Farooq;Robert Hannon;Subramanian S. Iyer;Steven J. Koester

  • The kinetics of fast steps on crystal surfaces and its application to the molecular beam epitaxy of silicon

    R. Ghez;S. S. Iyer

  • Silicon-germanium base heterojunction bipolar transistors by molecular beam epitaxy

    S.S. Iyer;G.L. Patton;S.S. Delage;S. Tiwari

  • High Temperature Process Limitation on TiSi2

    C. Y. Ting;F. M. d'Heurle;S. S. Iyer;P. M. Fryer

Frequent Co-Authors

Francoise K. LeGoues
Francoise K. LeGoues IBM (United States)
Steven J. Koester
Steven J. Koester University of Minnesota
Johannes M. C. Stork
Johannes M. C. Stork ON Semiconductor (United States)
Mark S. Goorsky
Mark S. Goorsky University of California, Los Angeles
Bernard S. Meyerson
Bernard S. Meyerson IBM (United States)
Sampath Purushothaman
Sampath Purushothaman IBM (United States)
Puneet Gupta
Puneet Gupta University of California, Los Angeles
David L. Harame
David L. Harame IBM (United States)
Gregory G. Freeman
Gregory G. Freeman IBM (United States)
Kangguo Cheng
Kangguo Cheng IBM (United States)

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