World's Best Scientists 2026 revealed!
Shinichi Takagi

Shinichi Takagi

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Electronics and Electrical Engineering
Japan
2026
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Materials Science
Japan
2022

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
84
Citations
24825
World Ranking
417
National Ranking
8

Materials Science

D-Index
83
Citations
24680
World Ranking
2374
National Ranking
100

Shinichi Takagi publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Shinichi Takagi sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 942 publications — 98th percentile

98% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Shinichi Takagi D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Shinichi Takagi sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 84 D-Index — 94th percentile

94% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Research.com Recognitions

  • 2026 - Research.com Electronics and Electrical Engineering in Japan Leader Award
  • 2025 - Research.com Electronics and Electrical Engineering in Japan Leader Award
  • 2023 - Research.com Electronics and Electrical Engineering in Japan Leader Award
  • 2022 - Research.com Electronics and Electrical Engineering in Japan Leader Award
  • 2022 - Research.com Materials Science in Japan Leader Award

Overview

Shinichi Takagi is affiliated with the University of Tokyo in Japan and conducts research primarily within the field of engineering. Their expertise spans electrical and electronic engineering, artificial intelligence, atomic and molecular physics and optics, materials chemistry, and biomedical engineering.

The core focus of Shinichi Takagi's work involves semiconductor materials and devices, with a significant body of research on ferroelectric and negative capacitance devices. Their studies also address advancements in semiconductor devices and circuit design, photonic and optical devices, advanced memory and neural computing, neural networks and reservoir computing, and optical network technologies.

Their recent scholarly contributions include the following papers:

  • The future transistors, 2023, Nature
  • Low Operating Voltage, Improved Breakdown Tolerance, and High Endurance in Hf0.5Zr0.5O2 Ferroelectric Capacitors Achieved by Thickness Scaling Down to 4 nm for Embedded Ferroelectric Memory, 2022, ACS Applied Materials & Interfaces
  • High responsivity in MoS2 phototransistors based on charge trapping HfO2 dielectrics, 2020, Communications Materials
  • Improved Ferroelectric/Semiconductor Interface Properties in Hf0.5Zr0.5O2 Ferroelectric FETs by Low-Temperature Annealing, 2020, IEEE Electron Device Letters
  • Reservoir computing on a silicon platform with a ferroelectric field-effect transistor, 2022, Communications Engineering

Shinichi Takagi frequently collaborates with several researchers, including Mitsuru Takenaka, Kasidit Toprasertpong, Kei Sumita, Eishin Nako, and Ryosho Nakane.

Their publications are often found in venues such as:

  • Japanese Journal of Applied Physics
  • IEEE Transactions on Electron Devices
  • Optics Express
  • ECS Meeting Abstracts
  • ECS Transactions

Best Publications

  • On the universality of inversion layer mobility in Si MOSFET's: Part I-effects of substrate impurity concentration

    S. Takagi;A. Toriumi;M. Iwase;H. Tango

  • Comparative study of phonon‐limited mobility of two‐dimensional electrons in strained and unstrained Si metal–oxide–semiconductor field‐effect transistors

    Shin‐ichi Takagi;Judy L. Hoyt;Jeffrey J. Welser;James F. Gibbons

  • On the universality of inversion layer mobility in Si MOSFET's: Part II-effects of surface orientation

    S. Takagi;A. Toriumi;M. Iwase;H. Tango

  • Carrier-Transport-Enhanced Channel CMOS for Improved Power Consumption and Performance

    S. Takagi;T. Iisawa;T. Tezuka;T. Numata

  • Evidence of low interface trap density in GeO2∕Ge metal-oxide-semiconductor structures fabricated by thermal oxidation

    Hiroshi Matsubara;Takashi Sasada;Mitsuru Takenaka;Shinichi Takagi

  • Fabrication of strained Si on an ultrathin SiGe-on-insulator virtual substrate with a high-Ge fraction

    T. Tezuka;N. Sugiyama;S. Takagi

  • Strain dependence of the performance enhancement in strained-Si n-MOSFETs

    J. Welser;J.L. Hoyt;S. Takagi;J.F. Gibbons

  • Experimental study on carrier transport mechanism in ultrathin-body SOI nand p-MOSFETs with SOI thickness less than 5 nm

    K. Uchida;H. Watanabe;A. Kinoshita;J. Koga

  • Characterization of 7-nm-thick strained Ge-on-insulator layer fabricated by Ge-condensation technique

    Shu Nakaharai;Tsutomu Tezuka;Naoharu Sugiyama;Yoshihiko Moriyama

  • Electron and hole mobility enhancement in strained-Si MOSFET's on SiGe-on-insulator substrates fabricated by SIMOX technology

    T. Mizuno;S. Takagi;N. Sugiyama;H. Satake

  • Semiconductor device and method of manufacturing substrate

    Naoharu Sugiyama;Atsushi Kurobe;Tsutomu Tezuka;Tomohisa Mizuno

  • A Novel Fabrication Technique of Ultrathin and Relaxed SiGe Buffer Layers with High Ge Fraction for Sub-100 nm Strained Silicon-on-Insulator MOSFETs

    Tsutomu Tezuka;Naoharu Sugiyama;Tomohisa Mizuno;Masamichi Suzuki

  • Bending experiment on pentacene field-effect transistors on plastic films

    Tsuyoshi Sekitani;Yusaku Kato;Shingo Iba;Hiroshi Shinaoka

  • High-Mobility Ge p- and n-MOSFETs With 0.7-nm EOT Using $\hbox{HfO}_{2}/\hbox{Al}_{2}\hbox{O}_{3}/\hbox{GeO}_{x}/\hbox{Ge}$ Gate Stacks Fabricated by Plasma Postoxidation

    Rui Zhang;Po-Chin Huang;Ju-Chin Lin;N. Taoka

  • Al2O3/GeOx/Ge gate stacks with low interface trap density fabricated by electron cyclotron resonance plasma postoxidation

    R. Zhang;T. Iwasaki;N. Taoka;M. Takenaka

  • Efficient low-loss InGaAsP/Si hybrid MOS optical modulator

    Jae-Hoon Han;Jae-Hoon Han;Frederic Boeuf;Junichi Fujikata;Shigeki Takahashi

  • Experimental evidence of inelastic tunneling in stress-induced leakage current

    S. Takagi;N. Yasuda;A. Toriumi

  • High-Mobility Ge pMOSFET With 1-nm EOT $\hbox{Al}_{2} \hbox{O}_{3}/\hbox{GeO}_{x}/\hbox{Ge}$ Gate Stack Fabricated by Plasma Post Oxidation

    Rui Zhang;T. Iwasaki;N. Taoka;M. Takenaka

  • Carrier scattering induced by thickness fluctuation of silicon-on-insulator film in ultrathin-body metal–oxide–semiconductor field-effect transistors

    Ken Uchida;Shin ichi Takagi

  • Quantitative understanding of inversion-layer capacitance in Si MOSFET's

    S. Takagi;A. Toriumi

Frequent Co-Authors

Mitsuru Takenaka
Mitsuru Takenaka University of Tokyo
Naoharu Sugiyama
Naoharu Sugiyama Nagoya University
Tsutomu Tezuka
Tsutomu Tezuka Toshiba (Japan)
Junji Koga
Junji Koga Toshiba (Japan)
Yoshiaki Nakano
Yoshiaki Nakano University of Tokyo
Akira Toriumi
Akira Toriumi University of Tokyo
Hitoshi Tabata
Hitoshi Tabata University of Tokyo
Akira Toriumi
Akira Toriumi University of Tokyo
Hiroshi Iwai
Hiroshi Iwai Tokyo Institute of Technology
Seiji Samukawa
Seiji Samukawa Tohoku University

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