D-Index & Metrics Best Publications
Electronics and Electrical Engineering
Japan
2023
Materials Science
Japan
2023

D-Index & Metrics D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines.

Discipline name D-index D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines. Citations Publications World Ranking National Ranking
Electronics and Electrical Engineering D-index 77 Citations 20,539 792 World Ranking 336 National Ranking 8
Materials Science D-index 75 Citations 20,118 838 World Ranking 1894 National Ranking 91

Research.com Recognitions

Awards & Achievements

2023 - Research.com Materials Science in Japan Leader Award

2023 - Research.com Electronics and Electrical Engineering in Japan Leader Award

2022 - Research.com Electronics and Electrical Engineering in Japan Leader Award

Overview

What is he best known for?

The fields of study he is best known for:

  • Quantum mechanics
  • Semiconductor
  • Electron

His main research concerns Optoelectronics, MOSFET, Electron mobility, Silicon on insulator and Electronic engineering. His biological study spans a wide range of topics, including Field-effect transistor and Transistor. He interconnects CMOS, Condensed matter physics, Silicon and Analytical chemistry in the investigation of issues within MOSFET.

As part of one scientific family, he deals mainly with the area of Electron mobility, narrowing it down to issues related to the Atomic layer deposition, and often MISFET and Wafer bonding. The concepts of his Silicon on insulator study are interwoven with issues in Threshold voltage, Epitaxy and Silicon-germanium. The various areas that Shinichi Takagi examines in his Electronic engineering study include Ballistic conduction and Gate oxide.

His most cited work include:

  • On the universality of inversion layer mobility in Si MOSFET's: Part I-effects of substrate impurity concentration (1189 citations)
  • Comparative study of phonon‐limited mobility of two‐dimensional electrons in strained and unstrained Si metal–oxide–semiconductor field‐effect transistors (413 citations)
  • Carrier-Transport-Enhanced Channel CMOS for Improved Power Consumption and Performance (286 citations)

What are the main themes of his work throughout his whole career to date?

Shinichi Takagi spends much of his time researching Optoelectronics, MOSFET, Electron mobility, CMOS and Silicon on insulator. His Optoelectronics study frequently involves adjacent topics like Transistor. His work deals with themes such as Metal and Quantum tunnelling, which intersect with Transistor.

Shinichi Takagi focuses mostly in the field of MOSFET, narrowing it down to matters related to Condensed matter physics and, in some cases, Impurity. His Electron mobility research includes elements of Surface roughness, Scattering and Electron. His CMOS study incorporates themes from Photonics, Wafer, Communication channel and Engineering physics.

He most often published in these fields:

  • Optoelectronics (69.81%)
  • MOSFET (28.72%)
  • Electron mobility (20.54%)

What were the highlights of his more recent work (between 2016-2021)?

  • Optoelectronics (69.81%)
  • Optical modulator (6.70%)
  • Quantum tunnelling (6.02%)

In recent papers he was focusing on the following fields of study:

The scientist’s investigation covers issues in Optoelectronics, Optical modulator, Quantum tunnelling, Insulator and Photonics. His research integrates issues of Gate stack and MOSFET in his study of Optoelectronics. His MOSFET research includes themes of Electron mobility, Electron and CMOS.

Shinichi Takagi combines subjects such as Wafer bonding, Modulation efficiency, Carrier depletion, Refractive index and Optical modulation amplitude with his study of Optical modulator. His study in Quantum tunnelling is interdisciplinary in nature, drawing from both Transistor, Impurity, Doping and Logic gate. His research in Photonics intersects with topics in Wavelength, Resonator and Waveguide.

Between 2016 and 2021, his most popular works were:

  • Efficient low-loss InGaAsP/Si hybrid MOS optical modulator (77 citations)
  • Effects of impurity and composition profiles on electrical characteristics of GaAsSb/InGaAs hetero-junction vertical tunnel field effect transistors (13 citations)
  • Effects of ZrO 2 /Al 2 O 3 Gate-Stack on the Performance of Planar-Type InGaAs TFET (12 citations)

In his most recent research, the most cited papers focused on:

  • Quantum mechanics
  • Semiconductor
  • Electron

Optoelectronics, Quantum tunnelling, Transistor, Phase modulation and Silicon are his primary areas of study. His studies deal with areas such as Annealing, Optical modulator and MOSFET as well as Optoelectronics. His MOSFET study combines topics in areas such as Indium gallium arsenide, Ion implantation, Threshold voltage, Electronic engineering and Insulator.

Shinichi Takagi has researched Insulator in several fields, including Electron mobility and Smart Cut. Shinichi Takagi has included themes like Heterojunction, Impurity, Doping and Electrode in his Quantum tunnelling study. He is studying Silicon on insulator, which is a component of Silicon.

This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.

Best Publications

On the universality of inversion layer mobility in Si MOSFET's: Part I-effects of substrate impurity concentration

S. Takagi;A. Toriumi;M. Iwase;H. Tango.
IEEE Transactions on Electron Devices (1994)

1567 Citations

Comparative study of phonon‐limited mobility of two‐dimensional electrons in strained and unstrained Si metal–oxide–semiconductor field‐effect transistors

Shin‐ichi Takagi;Judy L. Hoyt;Jeffrey J. Welser;James F. Gibbons.
Journal of Applied Physics (1996)

598 Citations

Carrier-Transport-Enhanced Channel CMOS for Improved Power Consumption and Performance

S. Takagi;T. Iisawa;T. Tezuka;T. Numata.
IEEE Transactions on Electron Devices (2008)

415 Citations

Fabrication of strained Si on an ultrathin SiGe-on-insulator virtual substrate with a high-Ge fraction

T. Tezuka;N. Sugiyama;S. Takagi.
Applied Physics Letters (2001)

412 Citations

Evidence of low interface trap density in GeO2∕Ge metal-oxide-semiconductor structures fabricated by thermal oxidation

Hiroshi Matsubara;Takashi Sasada;Mitsuru Takenaka;Shinichi Takagi.
Applied Physics Letters (2008)

411 Citations

On the universality of inversion layer mobility in Si MOSFET's: Part II-effects of surface orientation

S. Takagi;A. Toriumi;M. Iwase;H. Tango.
IEEE Transactions on Electron Devices (1994)

410 Citations

Strain dependence of the performance enhancement in strained-Si n-MOSFETs

J. Welser;J.L. Hoyt;S. Takagi;J.F. Gibbons.
international electron devices meeting (1994)

389 Citations

Characterization of 7-nm-thick strained Ge-on-insulator layer fabricated by Ge-condensation technique

Shu Nakaharai;Tsutomu Tezuka;Naoharu Sugiyama;Yoshihiko Moriyama.
Applied Physics Letters (2003)

349 Citations

Semiconductor device and method of manufacturing substrate

Naoharu Sugiyama;Atsushi Kurobe;Tsutomu Tezuka;Tomohisa Mizuno.
(2003)

309 Citations

Electron and hole mobility enhancement in strained-Si MOSFET's on SiGe-on-insulator substrates fabricated by SIMOX technology

T. Mizuno;S. Takagi;N. Sugiyama;H. Satake.
IEEE Electron Device Letters (2000)

307 Citations

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