2023 - Research.com Materials Science in Japan Leader Award
2023 - Research.com Electronics and Electrical Engineering in Japan Leader Award
2022 - Research.com Electronics and Electrical Engineering in Japan Leader Award
His main research concerns Optoelectronics, MOSFET, Electron mobility, Silicon on insulator and Electronic engineering. His biological study spans a wide range of topics, including Field-effect transistor and Transistor. He interconnects CMOS, Condensed matter physics, Silicon and Analytical chemistry in the investigation of issues within MOSFET.
As part of one scientific family, he deals mainly with the area of Electron mobility, narrowing it down to issues related to the Atomic layer deposition, and often MISFET and Wafer bonding. The concepts of his Silicon on insulator study are interwoven with issues in Threshold voltage, Epitaxy and Silicon-germanium. The various areas that Shinichi Takagi examines in his Electronic engineering study include Ballistic conduction and Gate oxide.
Shinichi Takagi spends much of his time researching Optoelectronics, MOSFET, Electron mobility, CMOS and Silicon on insulator. His Optoelectronics study frequently involves adjacent topics like Transistor. His work deals with themes such as Metal and Quantum tunnelling, which intersect with Transistor.
Shinichi Takagi focuses mostly in the field of MOSFET, narrowing it down to matters related to Condensed matter physics and, in some cases, Impurity. His Electron mobility research includes elements of Surface roughness, Scattering and Electron. His CMOS study incorporates themes from Photonics, Wafer, Communication channel and Engineering physics.
The scientist’s investigation covers issues in Optoelectronics, Optical modulator, Quantum tunnelling, Insulator and Photonics. His research integrates issues of Gate stack and MOSFET in his study of Optoelectronics. His MOSFET research includes themes of Electron mobility, Electron and CMOS.
Shinichi Takagi combines subjects such as Wafer bonding, Modulation efficiency, Carrier depletion, Refractive index and Optical modulation amplitude with his study of Optical modulator. His study in Quantum tunnelling is interdisciplinary in nature, drawing from both Transistor, Impurity, Doping and Logic gate. His research in Photonics intersects with topics in Wavelength, Resonator and Waveguide.
Optoelectronics, Quantum tunnelling, Transistor, Phase modulation and Silicon are his primary areas of study. His studies deal with areas such as Annealing, Optical modulator and MOSFET as well as Optoelectronics. His MOSFET study combines topics in areas such as Indium gallium arsenide, Ion implantation, Threshold voltage, Electronic engineering and Insulator.
Shinichi Takagi has researched Insulator in several fields, including Electron mobility and Smart Cut. Shinichi Takagi has included themes like Heterojunction, Impurity, Doping and Electrode in his Quantum tunnelling study. He is studying Silicon on insulator, which is a component of Silicon.
This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.
On the universality of inversion layer mobility in Si MOSFET's: Part I-effects of substrate impurity concentration
S. Takagi;A. Toriumi;M. Iwase;H. Tango.
IEEE Transactions on Electron Devices (1994)
Comparative study of phonon‐limited mobility of two‐dimensional electrons in strained and unstrained Si metal–oxide–semiconductor field‐effect transistors
Shin‐ichi Takagi;Judy L. Hoyt;Jeffrey J. Welser;James F. Gibbons.
Journal of Applied Physics (1996)
Carrier-Transport-Enhanced Channel CMOS for Improved Power Consumption and Performance
S. Takagi;T. Iisawa;T. Tezuka;T. Numata.
IEEE Transactions on Electron Devices (2008)
Fabrication of strained Si on an ultrathin SiGe-on-insulator virtual substrate with a high-Ge fraction
T. Tezuka;N. Sugiyama;S. Takagi.
Applied Physics Letters (2001)
Evidence of low interface trap density in GeO2∕Ge metal-oxide-semiconductor structures fabricated by thermal oxidation
Hiroshi Matsubara;Takashi Sasada;Mitsuru Takenaka;Shinichi Takagi.
Applied Physics Letters (2008)
On the universality of inversion layer mobility in Si MOSFET's: Part II-effects of surface orientation
S. Takagi;A. Toriumi;M. Iwase;H. Tango.
IEEE Transactions on Electron Devices (1994)
Strain dependence of the performance enhancement in strained-Si n-MOSFETs
J. Welser;J.L. Hoyt;S. Takagi;J.F. Gibbons.
international electron devices meeting (1994)
Characterization of 7-nm-thick strained Ge-on-insulator layer fabricated by Ge-condensation technique
Shu Nakaharai;Tsutomu Tezuka;Naoharu Sugiyama;Yoshihiko Moriyama.
Applied Physics Letters (2003)
Semiconductor device and method of manufacturing substrate
Naoharu Sugiyama;Atsushi Kurobe;Tsutomu Tezuka;Tomohisa Mizuno.
(2003)
Electron and hole mobility enhancement in strained-Si MOSFET's on SiGe-on-insulator substrates fabricated by SIMOX technology
T. Mizuno;S. Takagi;N. Sugiyama;H. Satake.
IEEE Electron Device Letters (2000)
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