World's Best Scientists 2026 revealed!
Shinichi Takagi

Shinichi Takagi

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Electronics and Electrical Engineering
Japan
2026
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Materials Science
Japan
2022

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
84
Citations
24825
World Ranking
417
National Ranking
8

Materials Science

D-Index
83
Citations
24680
World Ranking
2376
National Ranking
100

Research.com Recognitions

  • 2026 - Research.com Electronics and Electrical Engineering in Japan Leader Award
  • 2025 - Research.com Electronics and Electrical Engineering in Japan Leader Award
  • 2023 - Research.com Electronics and Electrical Engineering in Japan Leader Award
  • 2022 - Research.com Electronics and Electrical Engineering in Japan Leader Award
  • 2022 - Research.com Materials Science in Japan Leader Award

Overview

Shinichi Takagi is affiliated with the University of Tokyo in Japan and conducts research primarily within the field of engineering. Their expertise spans electrical and electronic engineering, artificial intelligence, atomic and molecular physics and optics, materials chemistry, and biomedical engineering.

The core focus of Shinichi Takagi's work involves semiconductor materials and devices, with a significant body of research on ferroelectric and negative capacitance devices. Their studies also address advancements in semiconductor devices and circuit design, photonic and optical devices, advanced memory and neural computing, neural networks and reservoir computing, and optical network technologies.

Their recent scholarly contributions include the following papers:

  • The future transistors, 2023, Nature
  • Low Operating Voltage, Improved Breakdown Tolerance, and High Endurance in Hf0.5Zr0.5O2 Ferroelectric Capacitors Achieved by Thickness Scaling Down to 4 nm for Embedded Ferroelectric Memory, 2022, ACS Applied Materials & Interfaces
  • High responsivity in MoS2 phototransistors based on charge trapping HfO2 dielectrics, 2020, Communications Materials
  • Improved Ferroelectric/Semiconductor Interface Properties in Hf0.5Zr0.5O2 Ferroelectric FETs by Low-Temperature Annealing, 2020, IEEE Electron Device Letters
  • Reservoir computing on a silicon platform with a ferroelectric field-effect transistor, 2022, Communications Engineering

Shinichi Takagi frequently collaborates with several researchers, including Mitsuru Takenaka, Kasidit Toprasertpong, Kei Sumita, Eishin Nako, and Ryosho Nakane.

Their publications are often found in venues such as:

  • Japanese Journal of Applied Physics
  • IEEE Transactions on Electron Devices
  • Optics Express
  • ECS Meeting Abstracts
  • ECS Transactions

Best Publications

  • On the universality of inversion layer mobility in Si MOSFET's: Part I-effects of substrate impurity concentration

    S. Takagi;A. Toriumi;M. Iwase;H. Tango

  • Comparative study of phonon‐limited mobility of two‐dimensional electrons in strained and unstrained Si metal–oxide–semiconductor field‐effect transistors

    Shin‐ichi Takagi;Judy L. Hoyt;Jeffrey J. Welser;James F. Gibbons

  • On the universality of inversion layer mobility in Si MOSFET's: Part II-effects of surface orientation

    S. Takagi;A. Toriumi;M. Iwase;H. Tango

  • Carrier-Transport-Enhanced Channel CMOS for Improved Power Consumption and Performance

    S. Takagi;T. Iisawa;T. Tezuka;T. Numata

  • Evidence of low interface trap density in GeO2∕Ge metal-oxide-semiconductor structures fabricated by thermal oxidation

    Hiroshi Matsubara;Takashi Sasada;Mitsuru Takenaka;Shinichi Takagi

  • Fabrication of strained Si on an ultrathin SiGe-on-insulator virtual substrate with a high-Ge fraction

    T. Tezuka;N. Sugiyama;S. Takagi

  • Strain dependence of the performance enhancement in strained-Si n-MOSFETs

    J. Welser;J.L. Hoyt;S. Takagi;J.F. Gibbons

  • Experimental study on carrier transport mechanism in ultrathin-body SOI nand p-MOSFETs with SOI thickness less than 5 nm

    K. Uchida;H. Watanabe;A. Kinoshita;J. Koga

  • Characterization of 7-nm-thick strained Ge-on-insulator layer fabricated by Ge-condensation technique

    Shu Nakaharai;Tsutomu Tezuka;Naoharu Sugiyama;Yoshihiko Moriyama

  • Electron and hole mobility enhancement in strained-Si MOSFET's on SiGe-on-insulator substrates fabricated by SIMOX technology

    T. Mizuno;S. Takagi;N. Sugiyama;H. Satake

  • Semiconductor device and method of manufacturing substrate

    Naoharu Sugiyama;Atsushi Kurobe;Tsutomu Tezuka;Tomohisa Mizuno

  • A Novel Fabrication Technique of Ultrathin and Relaxed SiGe Buffer Layers with High Ge Fraction for Sub-100 nm Strained Silicon-on-Insulator MOSFETs

    Tsutomu Tezuka;Naoharu Sugiyama;Tomohisa Mizuno;Masamichi Suzuki

  • Bending experiment on pentacene field-effect transistors on plastic films

    Tsuyoshi Sekitani;Yusaku Kato;Shingo Iba;Hiroshi Shinaoka

  • High-Mobility Ge p- and n-MOSFETs With 0.7-nm EOT Using $\hbox{HfO}_{2}/\hbox{Al}_{2}\hbox{O}_{3}/\hbox{GeO}_{x}/\hbox{Ge}$ Gate Stacks Fabricated by Plasma Postoxidation

    Rui Zhang;Po-Chin Huang;Ju-Chin Lin;N. Taoka

  • Al2O3/GeOx/Ge gate stacks with low interface trap density fabricated by electron cyclotron resonance plasma postoxidation

    R. Zhang;T. Iwasaki;N. Taoka;M. Takenaka

  • Efficient low-loss InGaAsP/Si hybrid MOS optical modulator

    Jae-Hoon Han;Jae-Hoon Han;Frederic Boeuf;Junichi Fujikata;Shigeki Takahashi

  • Experimental evidence of inelastic tunneling in stress-induced leakage current

    S. Takagi;N. Yasuda;A. Toriumi

  • High-Mobility Ge pMOSFET With 1-nm EOT $\hbox{Al}_{2} \hbox{O}_{3}/\hbox{GeO}_{x}/\hbox{Ge}$ Gate Stack Fabricated by Plasma Post Oxidation

    Rui Zhang;T. Iwasaki;N. Taoka;M. Takenaka

  • Carrier scattering induced by thickness fluctuation of silicon-on-insulator film in ultrathin-body metal–oxide–semiconductor field-effect transistors

    Ken Uchida;Shin ichi Takagi

  • Quantitative understanding of inversion-layer capacitance in Si MOSFET's

    S. Takagi;A. Toriumi

Frequent Co-Authors

Mitsuru Takenaka
Mitsuru Takenaka University of Tokyo
Naoharu Sugiyama
Naoharu Sugiyama Nagoya University
Tsutomu Tezuka
Tsutomu Tezuka Toshiba (Japan)
Junji Koga
Junji Koga Toshiba (Japan)
Yoshiaki Nakano
Yoshiaki Nakano University of Tokyo
Akira Toriumi
Akira Toriumi University of Tokyo
Hitoshi Tabata
Hitoshi Tabata University of Tokyo
Akira Toriumi
Akira Toriumi University of Tokyo
Hiroshi Iwai
Hiroshi Iwai Tokyo Institute of Technology
Seiji Samukawa
Seiji Samukawa Tohoku University

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