Akira Toriumi

Best Publications

• On the universality of inversion layer mobility in Si MOSFET's: Part I-effects of substrate impurity concentration

  S. Takagi;A. Toriumi;M. Iwase;H. Tango

  1706
  Citations

• Experimental study of threshold voltage fluctuation due to statistical variation of channel dopant number in MOSFET's

  T. Mizuno;J. Okumtura;A. Toriumi

  813
  Citations

• Evidence for strong Fermi-level pinning due to metal-induced gap states at metal/germanium interface

  Tomonori Nishimura;Koji Kita;Akira Toriumi

  610
  Citations

• On the universality of inversion layer mobility in Si MOSFET's: Part II-effects of surface orientation

  S. Takagi;A. Toriumi;M. Iwase;H. Tango

  466
  Citations

• Origin of electric dipoles formed at high-k/SiO2 interface

  Koji Kita;Akira Toriumi

  430
  Citations

• Electron and hole mobility enhancement in strained-Si MOSFET's on SiGe-on-insulator substrates fabricated by SIMOX technology

  T. Mizuno;S. Takagi;N. Sugiyama;H. Satake

  313
  Citations

• Dielectric constant enhancement due to Si incorporation into HfO2

  Kazuyuki Tomida;Koji Kita;Akira Toriumi

  271
  Citations

• A Significant Shift of Schottky Barrier Heights at Strongly Pinned Metal/Germanium Interface by Inserting an Ultra-Thin Insulating Film

  Tomonori Nishimura;Koji Kita;Akira Toriumi

  260
  Citations

• A study of photon emission from n-channel MOSFET's

  A. Toriumi;M. Yoshimi;M. Iwase;Y. Akiyama

  236
  Citations

• Experimental evidence of inelastic tunneling in stress-induced leakage current

  S. Takagi;N. Yasuda;A. Toriumi

  221
  Citations

• Experimental evidence for the flatband voltage shift of high-k metal-oxide-semiconductor devices due to the dipole formation at the high-k∕SiO2 interface

  Kunihiko Iwamoto;Yuuichi Kamimuta;Arito Ogawa;Yukimune Watanabe

  211
  Citations

• Quantitative understanding of inversion-layer capacitance in Si MOSFET's

  S. Takagi;A. Toriumi

  202
  Citations

• Non-volatile Si quantum memory with self-aligned doubly-stacked dots

  R. Ohba;N. Sugiyama;K. Uchida;J. Koga

  199
  Citations

• A new I-V model for stress-induced leakage current including inelastic tunneling

  S. Takagi;N. Yasuda;A. Toriumi

  196
  Citations

• Structural and electrical properties of HfLaOx films for an amorphous high-k gate insulator

  Y. Yamamoto;K. Kita;K. Kyuno;A. Toriumi

  191
  Citations

• Opportunities and challenges for Ge CMOS - Control of interfacing field on Ge is a key (Invited Paper)

  Akira Toriumi;Toshiyuki Tabata;Choong Hyun Lee;Tomonori Nishimura

  191
  Citations

• On the universality of inversion-layer mobility in n- and p-channel MOSFETs

  S. Takagi;M. Iwase;A. Toriumi

  186
  Citations

• Germanium CMOS potential from material and process perspectives: Be more positive about germanium

  Akira Toriumi;Tomonori Nishimura

  180
  Citations

• Ge/GeO2 Interface Control with High Pressure Oxidation for Improving Electrical Characteristics

  Choong Hyun Lee;Toshiyuki Tabata;Tomonori Nishimura;Kosuke Nagashio

  178
  Citations

• In-plane mobility anisotropy and universality under uni-axial strains in nand p-MOS inversion layers on (100), [110], and (111) Si

  H. Irie;K. Kita;K. Kyuno;A. Toriumi

  177
  Citations