Junji Koga spends much of his time researching Optoelectronics, MOSFET, Silicon on insulator, Electron mobility and Electrical engineering. The Optoelectronics study combines topics in areas such as Field-effect transistor, Transistor and Electrode. His MOSFET research is multidisciplinary, incorporating perspectives in Electronic engineering and CMOS.
His studies in Electronic engineering integrate themes in fields like Programmable Array Logic, Silicon and Erasable programmable logic device. His Electron mobility research is multidisciplinary, incorporating elements of Capacitance and Coulomb scattering. His biological study spans a wide range of topics, including Simple programmable logic device, Impurity and Macrocell array.
The scientist’s investigation covers issues in Optoelectronics, Silicon, MOSFET, Silicon on insulator and Impurity. His studies deal with areas such as Electronic engineering, Semiconductor device, Electrode and Electrical engineering as well as Optoelectronics. His Silicon research incorporates elements of Negative differential conductance, Quantum tunnelling, Nanotechnology, Schottky barrier and Coulomb blockade.
Junji Koga has included themes like Electron mobility, Condensed matter physics, Dopant, Doping and CMOS in his MOSFET study. His Dopant course of study focuses on Transistor and Schottky diode. His Silicon on insulator research is multidisciplinary, relying on both Threshold voltage, Wafer and Tunnel diode.
Junji Koga mainly focuses on Optoelectronics, Electrode, Semiconductor device, Semiconductor and Silicide. His research in Optoelectronics is mostly concerned with Silicon. His work carried out in the field of Silicon brings together such families of science as Threshold voltage, Dipole, Schottky diode and Dopant.
His Semiconductor device study integrates concerns from other disciplines, such as Gate length and Diffusion layer. His research investigates the connection with Semiconductor and areas like Substrate which intersect with concerns in Wafer, Electron mobility, Semiconductor device fabrication and CMOS. His Silicide research includes elements of Ion implantation, Condensed matter physics, Work function and Metal–semiconductor junction.
His main research concerns Optoelectronics, Semiconductor device, Electrode, Semiconductor and Layer. His Optoelectronics study combines topics in areas such as Field-effect transistor and Nanotechnology. His work in Semiconductor device addresses subjects such as Diffusion layer, which are connected to disciplines such as Conductor, Electrical contacts, Electronic engineering and Electrical connection.
His research in Electrode intersects with topics in Gate length and Substrate. His study in Semiconductor is interdisciplinary in nature, drawing from both Electron mobility, Wafer, Substrate and CMOS. Junji Koga has included themes like Ion implantation, MISFET and Electrical engineering in his Layer study.
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Experimental study on carrier transport mechanism in ultrathin-body SOI nand p-MOSFETs with SOI thickness less than 5 nm
K. Uchida;H. Watanabe;A. Kinoshita;J. Koga.
international electron devices meeting (2002)
Experimental study on carrier transport mechanism in ultrathin-body SOI nand p-MOSFETs with SOI thickness less than 5 nm
K. Uchida;H. Watanabe;A. Kinoshita;J. Koga.
international electron devices meeting (2002)
Solution for high-performance Schottky-source/drain MOSFETs: Schottky barrier height engineering with dopant segregation technique
A. Kinoshita;Y. Tsuchiya;A. Yagishita;K. Uchida.
symposium on vlsi technology (2004)
Solution for high-performance Schottky-source/drain MOSFETs: Schottky barrier height engineering with dopant segregation technique
A. Kinoshita;Y. Tsuchiya;A. Yagishita;K. Uchida.
symposium on vlsi technology (2004)
Non-volatile Si quantum memory with self-aligned doubly-stacked dots
R. Ohba;N. Sugiyama;K. Uchida;J. Koga.
international electron devices meeting (2000)
Non-volatile Si quantum memory with self-aligned doubly-stacked dots
R. Ohba;N. Sugiyama;K. Uchida;J. Koga.
international electron devices meeting (2000)
Semiconductor device including a tunnel effect element
Junji Koga.
(1997)
High-Performance FinFET with Dopant-Segregated Schottky Source/Drain
A. Kaneko;A. Yagishita;K. Yahashi;T. Kubota.
international electron devices meeting (2006)
Semiconductor device including a tunnel effect element
Junji Koga.
(1997)
High-Performance FinFET with Dopant-Segregated Schottky Source/Drain
A. Kaneko;A. Yagishita;K. Yahashi;T. Kubota.
international electron devices meeting (2006)
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