World's Best Scientists 2026 revealed!
Yangyuan Wang

Yangyuan Wang

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
44
Citations
7888
World Ranking
3734
National Ranking
587

Yangyuan Wang publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Yangyuan Wang sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 461 publications — 81st percentile

81% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Yangyuan Wang D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Yangyuan Wang sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 44 D-Index — 47th percentile

47% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Yangyuan Wang is affiliated with Peking University in China and has made contributions primarily in the field of engineering, with a focus on electrical and electronic engineering. Their research encompasses several subfields, including biomedical engineering, cardiology and cardiovascular medicine, materials chemistry, and atomic and molecular physics, and optics.

The research topics Yangyuan Wang has frequently explored include:

  • Semiconductor materials and devices
  • Advancements in semiconductor devices and circuit design
  • Ferroelectric and negative capacitance devices
  • Advanced memory and neural computing
  • Analog and mixed-signal circuit design
  • ECG monitoring and analysis
  • Energy harvesting in wireless networks

Yangyuan Wang has published extensively in journals related to circuits and systems, solid-state circuits, and information sciences, among others. Frequent publication venues include:

  • IEEE Transactions on Circuits and Systems I Regular Papers
  • IEEE Journal of Solid-State Circuits
  • Science China Information Sciences
  • IEEE Electron Device Letters
  • IEEE Transactions on Electron Devices

The scientist has collaborated with several co-authors on multiple occasions. Notable frequent co-authors are:

  • Ru Huang
  • Le Ye
  • Zhixuan Wang
  • Qianqian Huang
  • Zhichao Tan

Among their recent publications are the following works:

  • The Challenges and Emerging Technologies for Low-Power Artificial Intelligence IoT Systems, 2021, IEEE Transactions on Circuits and Systems I Regular Papers
  • A 148-nW Reconfigurable Event-Driven Intelligent Wake-Up System for AIoT Nodes Using an Asynchronous Pulse-Based Feature Extractor and a Convolutional Neural Network, 2021, IEEE Journal of Solid-State Circuits
  • A Software-Defined Always-On System With 57-75-nW Wake-Up Function Using Asynchronous Clock-Free Pipelined Event-Driven Architecture and Time-Shielding Level-Crossing ADC, 2021, IEEE Journal of Solid-State Circuits
  • Ultra-Low-Power and Performance-Improved Logic Circuit Using Hybrid TFET-MOSFET Standard Cells Topologies and Optimized Digital Front-End Process, 2020, IEEE Transactions on Circuits and Systems I Regular Papers
  • Physical investigation of subthreshold swing degradation behavior in negative capacitance FET, 2022, Science China Information Sciences

Best Publications

  • Magnetoelectric CoFe2O4–Pb(Zr,Ti)O3 composite thin films derived by a sol-gel process

    J. G. Wan;X. W. Wang;Y. J. Wu;M. Zeng

  • Engineering incremental resistive switching in TaOx based memristors for brain-inspired computing

    Zongwei Wang;Minghui Yin;Teng Zhang;Yimao Cai

  • Growth of amorphous silicon nanowires via a solid–liquid–solid mechanism

    H.F Yan;Y.J Xing;Q.L Hang;D.P Yu

  • Nano-scale GeO2 wires synthesized by physical evaporation

    Z.G. Bai;D.P. Yu;H.Z. Zhang;Y. Ding

  • Strong flexural resonant magnetoelectric effect in Terfenol-D/epoxy-Pb(Zr,Ti)O-3 bilayer

    J. G. Wan;Z. Y. Li;Y. Wang;M. Zeng

  • A novel Si tunnel FET with 36mV/dec subthreshold slope based on junction depleted-modulation through striped gate configuration

    Qianqian Huang;Ru Huang;Zhan Zhan;Yingxin Qiu

  • A 0.4-V Low Noise Amplifier Using Forward Body Bias Technology for 5 GHz Application

    Dake Wu;Ru Huang;Waisum Wong;Yangyuan Wang

  • Single grain thin-film-transistor (TFT) with SOI CMOS performance formed by metal-induced-lateral-crystallization

    S. Jagar;M. Chan;M.C. Poon;Ming Qin

  • Analog/RF Performance of Si Nanowire MOSFETs and the Impact of Process Variation

    Runsheng Wang;Jing Zhuge;Ru Huang;Yu Tian

  • Investigation of Low-Frequency Noise in Silicon Nanowire MOSFETs

    Jing Zhuge;Runsheng Wang;Ru Huang;Yu Tian

  • The Challenges and Emerging Technologies for Low-Power Artificial Intelligence IoT Systems

    Le Ye;Zhixuan Wang;Ying Liu;Peiyu Chen

  • An Analytical Surface Potential Model Accounting for the Dual-Modulation Effects in Tunnel FETs

    Chunlei Wu;Ru Huang;Qianqian Huang;Chao Wang

  • Frequency-Independent Asymmetric Double- $pi $ Equivalent Circuit for On-Chip Spiral Inductors: Physics-Based Modeling and Parameter Extraction

    Fengyi Huang;Jingxue Lu;Nan Jiang;Xiaowen Zhang

  • Highly Power-Efficient Active-RC Filters With Wide Bandwidth-Range Using Low-Gain Push-Pull Opamps

    Le Ye;Congyin Shi;Huailin Liao;Ru Huang

  • Experimental Investigations on Carrier Transport in Si Nanowire Transistors: Ballistic Efficiency and Apparent Mobility

    Runsheng Wang;Hongwei Liu;Ru Huang;Jing Zhuge

  • Total Ionizing Dose (TID) Effects on $\hbox{TaO}_{x}$ -Based Resistance Change Memory

    Lijie Zhang;Ru Huang;Dejin Gao;Pan Yue

  • Unipolar $\hbox{TaO}_{x}$ -Based Resistive Change Memory Realized With Electrode Engineering

    Lijie Zhang;Ru Huang;Minghao Zhu;Shiqiang Qin

  • Predictive 3-D Modeling of Parasitic Gate Capacitance in Gate-all-Around Cylindrical Silicon Nanowire MOSFETs

    Jibin Zou;Qiumin Xu;Jieying Luo;Runsheng Wang

  • Magnetoelectric resonance-bandwidth broadening of Terfenol-D/epoxy-Pb(Zr,Ti)O3 bilayers in parallel and series connections

    H. Yu;M. Zeng;Y. Wang;J. G. Wan

  • A Novel Tunnel FET Design With Stacked Source Configuration for Average Subthreshold Swing Reduction

    Chunlei Wu;Qianqian Huang;Yang Zhao;Jiaxin Wang

  • A Single-Chip CMOS UHF RFID Reader Transceiver for Chinese Mobile Applications

    Le Ye;Huailin Liao;Fei Song;Jiang Chen

  • Enhanced fatigue-endurance of ferroelectric Pb1−xSrx(Zr0.52Ti0.48)O3 thin films prepared by sol-gel method

    Y. Wang;Q. Y. Shao;J.-M. Liu

Frequent Co-Authors

Ru Huang
Ru Huang Peking University
Mansun Chan
Mansun Chan Hong Kong University of Science and Technology
Dong-Won Kim
Dong-Won Kim Hanyang University
Jinfeng Kang
Jinfeng Kang Peking University
Shengdong Zhang
Shengdong Zhang Peking University
Chuan Wang
Chuan Wang Washington University in St. Louis
Yan Li
Yan Li Peking University
Chenming Hu
Chenming Hu University of California, Berkeley
Dapeng Yu
Dapeng Yu Peking University

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