D-Index & Metrics Best Publications
Guido Groeseneken

Guido Groeseneken

Electronics and Electrical Engineering
Belgium
2023

D-Index & Metrics D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines.

Discipline name D-index D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines. Citations Publications World Ranking National Ranking
Materials Science D-index 78 Citations 24,781 765 World Ranking 1147 National Ranking 11
Electronics and Electrical Engineering D-index 85 Citations 30,195 1,112 World Ranking 196 National Ranking 2

Research.com Recognitions

Awards & Achievements

2023 - Research.com Electronics and Electrical Engineering in Belgium Leader Award

2022 - Research.com Electronics and Electrical Engineering in Belgium Leader Award

2005 - IEEE Fellow For his contributions to the physical understanding and the modeling of reliability of metal oxide semiconductor field effect transistors.

Overview

What is he best known for?

The fields of study he is best known for:

  • Quantum mechanics
  • Transistor
  • Electrical engineering

The scientist’s investigation covers issues in Optoelectronics, Electronic engineering, MOSFET, Transistor and Electrical engineering. His study in Optoelectronics is interdisciplinary in nature, drawing from both Field-effect transistor, Gate dielectric and Gate oxide. His research integrates issues of Resistive random-access memory, Voltage, Stress, Statistical physics and Reliability in his study of Electronic engineering.

His study focuses on the intersection of MOSFET and fields such as Analytical chemistry with connections in the field of Range and Molecular physics. The various areas that Guido Groeseneken examines in his Transistor study include Capacitance and Degradation. Guido Groeseneken has included themes like Silicon on insulator and Substrate in his Electrical engineering study.

His most cited work include:

  • A reliable approach to charge-pumping measurements in MOS transistors (1166 citations)
  • New insights in the relation between electron trap generation and the statistical properties of oxide breakdown (530 citations)
  • Analysis of the charge pumping technique and its application for the evaluation of MOSFET degradation (394 citations)

What are the main themes of his work throughout his whole career to date?

Guido Groeseneken spends much of his time researching Optoelectronics, Electronic engineering, Electrical engineering, MOSFET and Transistor. The Optoelectronics study combines topics in areas such as Field-effect transistor and Gate oxide. His Electronic engineering research is multidisciplinary, incorporating perspectives in Electrostatic discharge, Voltage, Stress and Reliability.

His study in CMOS, NMOS logic, EEPROM and Electronic circuit are all subfields of Electrical engineering. His studies deal with areas such as Threshold voltage, Metal gate, Oxide and Analytical chemistry as well as MOSFET. His Dielectric study combines topics in areas such as Gate dielectric and Condensed matter physics.

He most often published in these fields:

  • Optoelectronics (46.20%)
  • Electronic engineering (31.23%)
  • Electrical engineering (24.37%)

What were the highlights of his more recent work (between 2013-2021)?

  • Optoelectronics (46.20%)
  • Electronic engineering (31.23%)
  • Transistor (16.19%)

In recent papers he was focusing on the following fields of study:

His primary areas of study are Optoelectronics, Electronic engineering, Transistor, Electrical engineering and Condensed matter physics. His Optoelectronics research includes elements of Stress and Logic gate. His work deals with themes such as Threshold voltage, Negative-bias temperature instability, Resistive random-access memory and Reliability, which intersect with Electronic engineering.

His Transistor research is multidisciplinary, relying on both Band gap and Thin-film transistor. Guido Groeseneken is interested in MOSFET, which is a branch of Electrical engineering. His research integrates issues of Magnetic anisotropy, Electric field and Dielectric in his study of Condensed matter physics.

Between 2013 and 2021, his most popular works were:

  • Forward Bias Gate Breakdown Mechanism in Enhancement-Mode p-GaN Gate AlGaN/GaN High-Electron Mobility Transistors (92 citations)
  • Fabrication and Analysis of a ${ m Si}/{ m Si}{0.55}{ m Ge}{0.45}$ Heterojunction Line Tunnel FET (79 citations)
  • 200 V Enhancement-Mode p-GaN HEMTs Fabricated on 200 mm GaN-on-SOI With Trench Isolation for Monolithic Integration (50 citations)

In his most recent research, the most cited papers focused on:

  • Quantum mechanics
  • Semiconductor
  • Electrical engineering

Optoelectronics, Electronic engineering, Electrical engineering, Transistor and Logic gate are his primary areas of study. His Electronic engineering research includes themes of Negative-bias temperature instability, Communication channel, Resistive random-access memory and Reliability. His Electrical engineering research is multidisciplinary, incorporating perspectives in Power consumption, Gallium nitride and Engineering physics.

The Transistor study combines topics in areas such as Parasitic element, Computational physics and Thin-film transistor. His study on Logic gate also encompasses disciplines like

  • Gate oxide that connect with fields like Electronic circuit, Threshold voltage and High-κ dielectric,
  • Capacitance most often made with reference to Node,
  • Stress most often made with reference to Temperature measurement,
  • Scaling which connect with Self heating. His Heterojunction research incorporates elements of Field-effect transistor, Doping and Quantum tunnelling.

This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.

Best Publications

A reliable approach to charge-pumping measurements in MOS transistors

G. Groeseneken;H.E. Maes;N. Beltran;R.F. De Keersmaecker.
IEEE Transactions on Electron Devices (1984)

1547 Citations

A reliable approach to charge-pumping measurements in MOS transistors

G. Groeseneken;H.E. Maes;N. Beltran;R.F. De Keersmaecker.
IEEE Transactions on Electron Devices (1984)

1547 Citations

New insights in the relation between electron trap generation and the statistical properties of oxide breakdown

R. Degraeve;G. Groeseneken;R. Bellens;J.L. Ogier.
IEEE Transactions on Electron Devices (1998)

718 Citations

New insights in the relation between electron trap generation and the statistical properties of oxide breakdown

R. Degraeve;G. Groeseneken;R. Bellens;J.L. Ogier.
IEEE Transactions on Electron Devices (1998)

718 Citations

Analysis of the charge pumping technique and its application for the evaluation of MOSFET degradation

P. Heremans;J. Witters;G. Groeseneken;H.E. Maes.
IEEE Transactions on Electron Devices (1989)

520 Citations

Analysis of the charge pumping technique and its application for the evaluation of MOSFET degradation

P. Heremans;J. Witters;G. Groeseneken;H.E. Maes.
IEEE Transactions on Electron Devices (1989)

520 Citations

Consistent model for the hot-carrier degradation in n-channel and p-channel MOSFETs

P. Heremans;R. Bellens;G. Groeseneken;H.E. Maes.
IEEE Transactions on Electron Devices (1988)

491 Citations

Consistent model for the hot-carrier degradation in n-channel and p-channel MOSFETs

P. Heremans;R. Bellens;G. Groeseneken;H.E. Maes.
IEEE Transactions on Electron Devices (1988)

491 Citations

Tunnel field-effect transistor without gate-drain overlap

Anne S. Verhulst;William G. Vandenberghe;Karen Maex;Guido Groeseneken.
Applied Physics Letters (2007)

445 Citations

Tunnel field-effect transistor without gate-drain overlap

Anne S. Verhulst;William G. Vandenberghe;Karen Maex;Guido Groeseneken.
Applied Physics Letters (2007)

445 Citations

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