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Guido Groeseneken

Guido Groeseneken

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Electronics and Electrical Engineering
Belgium
2026

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
90
Citations
35968
World Ranking
291
National Ranking
3

Materials Science

D-Index
90
Citations
35502
World Ranking
1667
National Ranking
14

Research.com Recognitions

  • 2026 - Research.com Electronics and Electrical Engineering in Belgium Leader Award
  • 2025 - Research.com Electronics and Electrical Engineering in Belgium Leader Award
  • 2023 - Research.com Electronics and Electrical Engineering in Belgium Leader Award
  • 2022 - Research.com Electronics and Electrical Engineering in Belgium Leader Award
  • 2005 - IEEE Fellow For his contributions to the physical understanding and the modeling of reliability of metal oxide semiconductor field effect transistors.

Overview

Guido Groeseneken is affiliated with KU Leuven in Belgium, contributing primarily to the field of engineering with a focused expertise in electrical and electronic engineering. Their research encompasses various subfields including condensed matter physics, electronic, optical and magnetic materials, atomic and molecular physics, optics, and materials chemistry.

The scientist has extensively worked on semiconductor materials and devices. Key research topics covered include advancements in semiconductor devices and circuit design, GaN-based semiconductor devices and materials, silicon carbide semiconductor technologies, integrated circuits and semiconductor failure analysis, electrostatic discharge in electronics, and ferroelectric and negative capacitance devices.

Guido Groeseneken's noteworthy publication record includes contributions in these frequently appearing venues:

  • IEEE Transactions on Electron Devices
  • IEEE Electron Device Letters
  • 2022 IEEE International Reliability Physics Symposium (IRPS)
  • IEEE Transactions on Power Electronics
  • IEEE Transactions on Semiconductor Manufacturing

Selected recent papers illustrate the scope of their work:

  • Observation of Dynamic V TH of p-GaN Gate HEMTs by Fast Sweeping Characterization, 2020, IEEE Electron Device Letters
  • Investigating the Current Collapse Mechanisms of p-GaN Gate HEMTs by Different Passivation Dielectrics, 2020, IEEE Transactions on Power Electronics
  • Compact Modeling of Multidomain Ferroelectric FETs: Charge Trapping, Channel Percolation, and Nucleation-Growth Domain Dynamics, 2021, IEEE Transactions on Electron Devices
  • Integration of 650 V GaN Power ICs on 200 mm Engineered Substrates, 2020, IEEE Transactions on Semiconductor Manufacturing
  • Reliability of p-GaN Gate HEMTs in Reverse Conduction, 2021, IEEE Transactions on Electron Devices

Frequent collaborators in their research include:

  • B. Kaczer
  • J. Franco
  • Nadine Collaert
  • Xiangdong Li
  • Shuzhen You

Guido Groeseneken was recognized as an IEEE Fellow in 2005 for contributions to the physical understanding and modeling of the reliability of metal oxide semiconductor field effect transistors.

Best Publications

  • A reliable approach to charge-pumping measurements in MOS transistors

    G. Groeseneken;H.E. Maes;N. Beltran;R.F. De Keersmaecker

  • New insights in the relation between electron trap generation and the statistical properties of oxide breakdown

    R. Degraeve;G. Groeseneken;R. Bellens;J.L. Ogier

  • Analysis of the charge pumping technique and its application for the evaluation of MOSFET degradation

    P. Heremans;J. Witters;G. Groeseneken;H.E. Maes

  • Direct and Indirect Band-to-Band Tunneling in Germanium-Based TFETs

    Kuo-Hsing Kao;A. S. Verhulst;W. G. Vandenberghe;B. Soree

  • Consistent model for the hot-carrier degradation in n-channel and p-channel MOSFETs

    P. Heremans;R. Bellens;G. Groeseneken;H.E. Maes

  • Tunnel field-effect transistor without gate-drain overlap

    Anne S. Verhulst;William G. Vandenberghe;Karen Maex;Guido Groeseneken

  • A consistent model for the thickness dependence of intrinsic breakdown in ultra-thin oxides

    R. Degraeve;G. Groeseneken;R. Bellens;M. Depas

  • On the Correct Extraction of Interface Trap Density of MOS Devices With High-Mobility Semiconductor Substrates

    K. Martens;Chi On Chui;G. Brammertz;B. De Jaeger

  • Origin of the threshold voltage instability in SiO 2 /HfO 2 dual layer gate dielectrics

    A. Kerber;E. Cartier;L. Pantisano;R. Degraeve

  • Origin of NBTI variability in deeply scaled pFETs

    B. Kaczer;T. Grasser;Ph. J. Roussel;J. Franco

  • Electrical properties of high-κ gate dielectrics: Challenges, current issues, and possible solutions

    M. Houssa;L. Pantisano;L.-Å. Ragnarsson;R. Degraeve

  • Endurance/Retention Trade-off on $\hbox{HfO}_{2}/\hbox{Metal}$ Cap 1T1R Bipolar RRAM

    Yang Yin Chen;L. Goux;S. Clima;B. Govoreanu

  • Ubiquitous relaxation in BTI stressing—New evaluation and insights

    B. Kaczer;T. Grasser;P.J. Roussel;J. Martin-Martinez

  • Modeling the single-gate, double-gate, and gate-all-around tunnel field-effect transistor

    Anne S. Verhulst;Bart Sorée;Daniele Leonelli;William G. Vandenberghe

  • Impact of MOSFET gate oxide breakdown on digital circuit operation and reliability

    B. Kaczer;R. Degraeve;G. Groeseneken;M. Rasras

  • Consistent model for short-channel nMOSFET after hard gate oxide breakdown

    B. Kaczer;R. Degraeve;A. De Keersgieter;K. Van de Mieroop

  • Balancing SET/RESET Pulse for $>\hbox{10}^{10}$ Endurance in $\hbox{HfO}_{2}\hbox{/Hf}$ 1T1R Bipolar RRAM

    Yang Yin Chen;B. Govoreanu;L. Goux;R. Degraeve

  • Temperature dependence of threshold voltage in thin-film SOI MOSFETs

    G. Groeseneken;J.-P. Colinge;H.E. Maes;J.C. Alderman

  • Degradation and breakdown in thin oxide layers: mechanisms, models and reliability prediction

    Robin Degraeve;Ben Kaczer;Guido Groeseneken

  • Complementary Silicon-Based Heterostructure Tunnel-FETs With High Tunnel Rates

    A.S. Verhulst;W.G. Vandenberghe;K. Maex;S. De Gendt

  • Disorder-controlled-kinetics model for negative bias temperature instability and its experimental verification

    B. Kaczer;V. Arkhipov;R. Degraeve;N. Collaert

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