2023 - Research.com Electronics and Electrical Engineering in Belgium Leader Award
2022 - Research.com Electronics and Electrical Engineering in Belgium Leader Award
2005 - IEEE Fellow For his contributions to the physical understanding and the modeling of reliability of metal oxide semiconductor field effect transistors.
The scientist’s investigation covers issues in Optoelectronics, Electronic engineering, MOSFET, Transistor and Electrical engineering. His study in Optoelectronics is interdisciplinary in nature, drawing from both Field-effect transistor, Gate dielectric and Gate oxide. His research integrates issues of Resistive random-access memory, Voltage, Stress, Statistical physics and Reliability in his study of Electronic engineering.
His study focuses on the intersection of MOSFET and fields such as Analytical chemistry with connections in the field of Range and Molecular physics. The various areas that Guido Groeseneken examines in his Transistor study include Capacitance and Degradation. Guido Groeseneken has included themes like Silicon on insulator and Substrate in his Electrical engineering study.
Guido Groeseneken spends much of his time researching Optoelectronics, Electronic engineering, Electrical engineering, MOSFET and Transistor. The Optoelectronics study combines topics in areas such as Field-effect transistor and Gate oxide. His Electronic engineering research is multidisciplinary, incorporating perspectives in Electrostatic discharge, Voltage, Stress and Reliability.
His study in CMOS, NMOS logic, EEPROM and Electronic circuit are all subfields of Electrical engineering. His studies deal with areas such as Threshold voltage, Metal gate, Oxide and Analytical chemistry as well as MOSFET. His Dielectric study combines topics in areas such as Gate dielectric and Condensed matter physics.
His primary areas of study are Optoelectronics, Electronic engineering, Transistor, Electrical engineering and Condensed matter physics. His Optoelectronics research includes elements of Stress and Logic gate. His work deals with themes such as Threshold voltage, Negative-bias temperature instability, Resistive random-access memory and Reliability, which intersect with Electronic engineering.
His Transistor research is multidisciplinary, relying on both Band gap and Thin-film transistor. Guido Groeseneken is interested in MOSFET, which is a branch of Electrical engineering. His research integrates issues of Magnetic anisotropy, Electric field and Dielectric in his study of Condensed matter physics.
Optoelectronics, Electronic engineering, Electrical engineering, Transistor and Logic gate are his primary areas of study. His Electronic engineering research includes themes of Negative-bias temperature instability, Communication channel, Resistive random-access memory and Reliability. His Electrical engineering research is multidisciplinary, incorporating perspectives in Power consumption, Gallium nitride and Engineering physics.
The Transistor study combines topics in areas such as Parasitic element, Computational physics and Thin-film transistor. His study on Logic gate also encompasses disciplines like
This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.
A reliable approach to charge-pumping measurements in MOS transistors
G. Groeseneken;H.E. Maes;N. Beltran;R.F. De Keersmaecker.
IEEE Transactions on Electron Devices (1984)
A reliable approach to charge-pumping measurements in MOS transistors
G. Groeseneken;H.E. Maes;N. Beltran;R.F. De Keersmaecker.
IEEE Transactions on Electron Devices (1984)
New insights in the relation between electron trap generation and the statistical properties of oxide breakdown
R. Degraeve;G. Groeseneken;R. Bellens;J.L. Ogier.
IEEE Transactions on Electron Devices (1998)
New insights in the relation between electron trap generation and the statistical properties of oxide breakdown
R. Degraeve;G. Groeseneken;R. Bellens;J.L. Ogier.
IEEE Transactions on Electron Devices (1998)
Analysis of the charge pumping technique and its application for the evaluation of MOSFET degradation
P. Heremans;J. Witters;G. Groeseneken;H.E. Maes.
IEEE Transactions on Electron Devices (1989)
Analysis of the charge pumping technique and its application for the evaluation of MOSFET degradation
P. Heremans;J. Witters;G. Groeseneken;H.E. Maes.
IEEE Transactions on Electron Devices (1989)
Consistent model for the hot-carrier degradation in n-channel and p-channel MOSFETs
P. Heremans;R. Bellens;G. Groeseneken;H.E. Maes.
IEEE Transactions on Electron Devices (1988)
Consistent model for the hot-carrier degradation in n-channel and p-channel MOSFETs
P. Heremans;R. Bellens;G. Groeseneken;H.E. Maes.
IEEE Transactions on Electron Devices (1988)
Tunnel field-effect transistor without gate-drain overlap
Anne S. Verhulst;William G. Vandenberghe;Karen Maex;Guido Groeseneken.
Applied Physics Letters (2007)
Tunnel field-effect transistor without gate-drain overlap
Anne S. Verhulst;William G. Vandenberghe;Karen Maex;Guido Groeseneken.
Applied Physics Letters (2007)
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