World's Best Scientists 2026 revealed!
Guido Groeseneken

Guido Groeseneken

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Electronics and Electrical Engineering
Belgium
2026

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
90
Citations
35968
World Ranking
291
National Ranking
3

Materials Science

D-Index
90
Citations
35502
World Ranking
1666
National Ranking
14

Guido Groeseneken publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Guido Groeseneken sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 1,230 publications — 99th percentile

99% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Guido Groeseneken D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Guido Groeseneken sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 90 D-Index — 96th percentile

96% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Research.com Recognitions

  • 2026 - Research.com Electronics and Electrical Engineering in Belgium Leader Award
  • 2025 - Research.com Electronics and Electrical Engineering in Belgium Leader Award
  • 2023 - Research.com Electronics and Electrical Engineering in Belgium Leader Award
  • 2022 - Research.com Electronics and Electrical Engineering in Belgium Leader Award
  • 2005 - IEEE Fellow For his contributions to the physical understanding and the modeling of reliability of metal oxide semiconductor field effect transistors.

Overview

Guido Groeseneken is affiliated with KU Leuven in Belgium, contributing primarily to the field of engineering with a focused expertise in electrical and electronic engineering. Their research encompasses various subfields including condensed matter physics, electronic, optical and magnetic materials, atomic and molecular physics, optics, and materials chemistry.

The scientist has extensively worked on semiconductor materials and devices. Key research topics covered include advancements in semiconductor devices and circuit design, GaN-based semiconductor devices and materials, silicon carbide semiconductor technologies, integrated circuits and semiconductor failure analysis, electrostatic discharge in electronics, and ferroelectric and negative capacitance devices.

Guido Groeseneken's noteworthy publication record includes contributions in these frequently appearing venues:

  • IEEE Transactions on Electron Devices
  • IEEE Electron Device Letters
  • 2022 IEEE International Reliability Physics Symposium (IRPS)
  • IEEE Transactions on Power Electronics
  • IEEE Transactions on Semiconductor Manufacturing

Selected recent papers illustrate the scope of their work:

  • Observation of Dynamic V TH of p-GaN Gate HEMTs by Fast Sweeping Characterization, 2020, IEEE Electron Device Letters
  • Investigating the Current Collapse Mechanisms of p-GaN Gate HEMTs by Different Passivation Dielectrics, 2020, IEEE Transactions on Power Electronics
  • Compact Modeling of Multidomain Ferroelectric FETs: Charge Trapping, Channel Percolation, and Nucleation-Growth Domain Dynamics, 2021, IEEE Transactions on Electron Devices
  • Integration of 650 V GaN Power ICs on 200 mm Engineered Substrates, 2020, IEEE Transactions on Semiconductor Manufacturing
  • Reliability of p-GaN Gate HEMTs in Reverse Conduction, 2021, IEEE Transactions on Electron Devices

Frequent collaborators in their research include:

  • B. Kaczer
  • J. Franco
  • Nadine Collaert
  • Xiangdong Li
  • Shuzhen You

Guido Groeseneken was recognized as an IEEE Fellow in 2005 for contributions to the physical understanding and modeling of the reliability of metal oxide semiconductor field effect transistors.

Best Publications

  • A reliable approach to charge-pumping measurements in MOS transistors

    G. Groeseneken;H.E. Maes;N. Beltran;R.F. De Keersmaecker

  • New insights in the relation between electron trap generation and the statistical properties of oxide breakdown

    R. Degraeve;G. Groeseneken;R. Bellens;J.L. Ogier

  • Analysis of the charge pumping technique and its application for the evaluation of MOSFET degradation

    P. Heremans;J. Witters;G. Groeseneken;H.E. Maes

  • Direct and Indirect Band-to-Band Tunneling in Germanium-Based TFETs

    Kuo-Hsing Kao;A. S. Verhulst;W. G. Vandenberghe;B. Soree

  • Consistent model for the hot-carrier degradation in n-channel and p-channel MOSFETs

    P. Heremans;R. Bellens;G. Groeseneken;H.E. Maes

  • Tunnel field-effect transistor without gate-drain overlap

    Anne S. Verhulst;William G. Vandenberghe;Karen Maex;Guido Groeseneken

  • A consistent model for the thickness dependence of intrinsic breakdown in ultra-thin oxides

    R. Degraeve;G. Groeseneken;R. Bellens;M. Depas

  • On the Correct Extraction of Interface Trap Density of MOS Devices With High-Mobility Semiconductor Substrates

    K. Martens;Chi On Chui;G. Brammertz;B. De Jaeger

  • Origin of the threshold voltage instability in SiO 2 /HfO 2 dual layer gate dielectrics

    A. Kerber;E. Cartier;L. Pantisano;R. Degraeve

  • Origin of NBTI variability in deeply scaled pFETs

    B. Kaczer;T. Grasser;Ph. J. Roussel;J. Franco

  • Electrical properties of high-κ gate dielectrics: Challenges, current issues, and possible solutions

    M. Houssa;L. Pantisano;L.-Å. Ragnarsson;R. Degraeve

  • Endurance/Retention Trade-off on $\hbox{HfO}_{2}/\hbox{Metal}$ Cap 1T1R Bipolar RRAM

    Yang Yin Chen;L. Goux;S. Clima;B. Govoreanu

  • Ubiquitous relaxation in BTI stressing—New evaluation and insights

    B. Kaczer;T. Grasser;P.J. Roussel;J. Martin-Martinez

  • Modeling the single-gate, double-gate, and gate-all-around tunnel field-effect transistor

    Anne S. Verhulst;Bart Sorée;Daniele Leonelli;William G. Vandenberghe

  • Impact of MOSFET gate oxide breakdown on digital circuit operation and reliability

    B. Kaczer;R. Degraeve;G. Groeseneken;M. Rasras

  • Consistent model for short-channel nMOSFET after hard gate oxide breakdown

    B. Kaczer;R. Degraeve;A. De Keersgieter;K. Van de Mieroop

  • Balancing SET/RESET Pulse for $>\hbox{10}^{10}$ Endurance in $\hbox{HfO}_{2}\hbox{/Hf}$ 1T1R Bipolar RRAM

    Yang Yin Chen;B. Govoreanu;L. Goux;R. Degraeve

  • Temperature dependence of threshold voltage in thin-film SOI MOSFETs

    G. Groeseneken;J.-P. Colinge;H.E. Maes;J.C. Alderman

  • Degradation and breakdown in thin oxide layers: mechanisms, models and reliability prediction

    Robin Degraeve;Ben Kaczer;Guido Groeseneken

  • Complementary Silicon-Based Heterostructure Tunnel-FETs With High Tunnel Rates

    A.S. Verhulst;W.G. Vandenberghe;K. Maex;S. De Gendt

  • Disorder-controlled-kinetics model for negative bias temperature instability and its experimental verification

    B. Kaczer;V. Arkhipov;R. Degraeve;N. Collaert

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