Luigi Pantisano mainly investigates Optoelectronics, Dielectric, MOSFET, High-κ dielectric and Tin. The various areas that Luigi Pantisano examines in his Optoelectronics study include Substrate, Gate dielectric, Passivation and Electrical engineering. His Dielectric research includes themes of CMOS, Instability and Work function.
His work deals with themes such as Noise, Condensed matter physics, Quantum tunnelling and Capacitor, which intersect with MOSFET. His Capacitor study deals with Fermi level intersecting with Analytical chemistry. His study in High-κ dielectric is interdisciplinary in nature, drawing from both PMOS logic and Electronic engineering.
His primary areas of investigation include Optoelectronics, Dielectric, MOSFET, High-κ dielectric and Electronic engineering. Luigi Pantisano focuses mostly in the field of Optoelectronics, narrowing it down to matters related to Gate dielectric and, in some cases, Noise. His studies in Dielectric integrate themes in fields like Condensed matter physics, Work function and Analytical chemistry.
His research on MOSFET also deals with topics like
Optoelectronics, Tin, Electronic engineering, MOSFET and Resistive random-access memory are his primary areas of study. In general Optoelectronics, his work in High-κ dielectric and Dielectric is often linked to Stack linking many areas of study. His Dielectric study combines topics from a wide range of disciplines, such as Field-effect transistor, Stress engineering and P channel.
Luigi Pantisano has researched Electronic engineering in several fields, including PMOS logic, Transistor, Phonon scattering, Wide-bandgap semiconductor and Reliability. Luigi Pantisano combines subjects such as Noise, CMOS, Equivalent oxide thickness and Logic gate with his study of MOSFET. His Stress research incorporates themes from Threshold voltage and Capacitor.
Luigi Pantisano focuses on Tin, Optoelectronics, Resistive switching, Layer and Reset. His Optoelectronics research is multidisciplinary, incorporating perspectives in Electronic engineering and MOSFET. His research in MOSFET intersects with topics in Wide-bandgap semiconductor, Reliability, Physical vapor deposition and Atomic layer deposition.
His Resistive switching research is multidisciplinary, relying on both Oxygen permeability, Protein filament and Electroforming. The various areas that Luigi Pantisano examines in his Layer study include Molecular physics, Band gap and Logic gate. His work deals with themes such as Field-effect transistor, Stress engineering and P channel, which intersect with Dielectric.
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Origin of the threshold voltage instability in SiO 2 /HfO 2 dual layer gate dielectrics
A. Kerber;E. Cartier;L. Pantisano;R. Degraeve.
IEEE Electron Device Letters (2003)
Origin of the threshold voltage instability in SiO 2 /HfO 2 dual layer gate dielectrics
A. Kerber;E. Cartier;L. Pantisano;R. Degraeve.
IEEE Electron Device Letters (2003)
Electrical properties of high-κ gate dielectrics: Challenges, current issues, and possible solutions
M. Houssa;L. Pantisano;L.-Å. Ragnarsson;R. Degraeve.
Materials Science & Engineering R-reports (2006)
Electrical properties of high-κ gate dielectrics: Challenges, current issues, and possible solutions
M. Houssa;L. Pantisano;L.-Å. Ragnarsson;R. Degraeve.
Materials Science & Engineering R-reports (2006)
Evidences of oxygen-mediated resistive-switching mechanism in TiN\HfO2\Pt cells
Ludovic Goux;Piotr Czarnecki;Yang Yin Chen;Luigi Pantisano.
Applied Physics Letters (2010)
Evidences of oxygen-mediated resistive-switching mechanism in TiN\HfO2\Pt cells
Ludovic Goux;Piotr Czarnecki;Yang Yin Chen;Luigi Pantisano.
Applied Physics Letters (2010)
Characterization of the V/sub T/-instability in SiO/sub 2//HfO/sub 2/ gate dielectrics
A. Kerber;E. Cartier;L. Pantisano;M. Rosmeulen.
international reliability physics symposium (2003)
Characterization of the V/sub T/-instability in SiO/sub 2//HfO/sub 2/ gate dielectrics
A. Kerber;E. Cartier;L. Pantisano;M. Rosmeulen.
international reliability physics symposium (2003)
Passivation and interface state density of SiO2/HfO2-based/polycrystalline-Si gate stacks
R. J. Carter;E. Cartier;A. Kerber;L. Pantisano.
Applied Physics Letters (2003)
Passivation and interface state density of SiO2/HfO2-based/polycrystalline-Si gate stacks
R. J. Carter;E. Cartier;A. Kerber;L. Pantisano.
Applied Physics Letters (2003)
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