D-Index & Metrics Best Publications

D-Index & Metrics D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines.

Discipline name D-index D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines. Citations Publications World Ranking National Ranking
Electronics and Electrical Engineering D-index 34 Citations 4,565 176 World Ranking 3983 National Ranking 1515

Overview

What is he best known for?

The fields of study he is best known for:

  • Semiconductor
  • Transistor
  • Electrical engineering

Luigi Pantisano mainly investigates Optoelectronics, Dielectric, MOSFET, High-κ dielectric and Tin. The various areas that Luigi Pantisano examines in his Optoelectronics study include Substrate, Gate dielectric, Passivation and Electrical engineering. His Dielectric research includes themes of CMOS, Instability and Work function.

His work deals with themes such as Noise, Condensed matter physics, Quantum tunnelling and Capacitor, which intersect with MOSFET. His Capacitor study deals with Fermi level intersecting with Analytical chemistry. His study in High-κ dielectric is interdisciplinary in nature, drawing from both PMOS logic and Electronic engineering.

His most cited work include:

  • Origin of the threshold voltage instability in SiO 2 /HfO 2 dual layer gate dielectrics (312 citations)
  • Electrical properties of high-κ gate dielectrics: Challenges, current issues, and possible solutions (216 citations)
  • Evidences of oxygen-mediated resistive-switching mechanism in TiN\HfO2\Pt cells (171 citations)

What are the main themes of his work throughout his whole career to date?

His primary areas of investigation include Optoelectronics, Dielectric, MOSFET, High-κ dielectric and Electronic engineering. Luigi Pantisano focuses mostly in the field of Optoelectronics, narrowing it down to matters related to Gate dielectric and, in some cases, Noise. His studies in Dielectric integrate themes in fields like Condensed matter physics, Work function and Analytical chemistry.

His research on MOSFET also deals with topics like

  • Electron mobility that intertwine with fields like Field-effect transistor,
  • NMOS logic together with PMOS logic. His High-κ dielectric research includes elements of Nanotechnology, Equivalent oxide thickness, Quantum tunnelling and Leakage. His Logic gate study, which is part of a larger body of work in Electronic engineering, is frequently linked to Tin, bridging the gap between disciplines.

He most often published in these fields:

  • Optoelectronics (61.58%)
  • Dielectric (42.63%)
  • MOSFET (38.95%)

What were the highlights of his more recent work (between 2009-2013)?

  • Optoelectronics (61.58%)
  • Tin (13.68%)
  • Electronic engineering (24.21%)

In recent papers he was focusing on the following fields of study:

Optoelectronics, Tin, Electronic engineering, MOSFET and Resistive random-access memory are his primary areas of study. In general Optoelectronics, his work in High-κ dielectric and Dielectric is often linked to Stack linking many areas of study. His Dielectric study combines topics from a wide range of disciplines, such as Field-effect transistor, Stress engineering and P channel.

Luigi Pantisano has researched Electronic engineering in several fields, including PMOS logic, Transistor, Phonon scattering, Wide-bandgap semiconductor and Reliability. Luigi Pantisano combines subjects such as Noise, CMOS, Equivalent oxide thickness and Logic gate with his study of MOSFET. His Stress research incorporates themes from Threshold voltage and Capacitor.

Between 2009 and 2013, his most popular works were:

  • Evidences of oxygen-mediated resistive-switching mechanism in TiN\HfO2\Pt cells (171 citations)
  • On the Gradual Unipolar and Bipolar Resistive Switching of TiN\ HfO2\Pt Memory Systems (87 citations)
  • Intrinsic Switching Behavior in HfO2 RRAM by Fast Electrical Measurements on Novel 2R Test Structures (38 citations)

In his most recent research, the most cited papers focused on:

  • Semiconductor
  • Transistor
  • Electrical engineering

Luigi Pantisano focuses on Tin, Optoelectronics, Resistive switching, Layer and Reset. His Optoelectronics research is multidisciplinary, incorporating perspectives in Electronic engineering and MOSFET. His research in MOSFET intersects with topics in Wide-bandgap semiconductor, Reliability, Physical vapor deposition and Atomic layer deposition.

His Resistive switching research is multidisciplinary, relying on both Oxygen permeability, Protein filament and Electroforming. The various areas that Luigi Pantisano examines in his Layer study include Molecular physics, Band gap and Logic gate. His work deals with themes such as Field-effect transistor, Stress engineering and P channel, which intersect with Dielectric.

This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.

Best Publications

Origin of the threshold voltage instability in SiO 2 /HfO 2 dual layer gate dielectrics

A. Kerber;E. Cartier;L. Pantisano;R. Degraeve.
IEEE Electron Device Letters (2003)

417 Citations

Origin of the threshold voltage instability in SiO 2 /HfO 2 dual layer gate dielectrics

A. Kerber;E. Cartier;L. Pantisano;R. Degraeve.
IEEE Electron Device Letters (2003)

417 Citations

Electrical properties of high-κ gate dielectrics: Challenges, current issues, and possible solutions

M. Houssa;L. Pantisano;L.-Å. Ragnarsson;R. Degraeve.
Materials Science & Engineering R-reports (2006)

310 Citations

Electrical properties of high-κ gate dielectrics: Challenges, current issues, and possible solutions

M. Houssa;L. Pantisano;L.-Å. Ragnarsson;R. Degraeve.
Materials Science & Engineering R-reports (2006)

310 Citations

Evidences of oxygen-mediated resistive-switching mechanism in TiN\HfO2\Pt cells

Ludovic Goux;Piotr Czarnecki;Yang Yin Chen;Luigi Pantisano.
Applied Physics Letters (2010)

284 Citations

Evidences of oxygen-mediated resistive-switching mechanism in TiN\HfO2\Pt cells

Ludovic Goux;Piotr Czarnecki;Yang Yin Chen;Luigi Pantisano.
Applied Physics Letters (2010)

284 Citations

Characterization of the V/sub T/-instability in SiO/sub 2//HfO/sub 2/ gate dielectrics

A. Kerber;E. Cartier;L. Pantisano;M. Rosmeulen.
international reliability physics symposium (2003)

186 Citations

Characterization of the V/sub T/-instability in SiO/sub 2//HfO/sub 2/ gate dielectrics

A. Kerber;E. Cartier;L. Pantisano;M. Rosmeulen.
international reliability physics symposium (2003)

186 Citations

Passivation and interface state density of SiO2/HfO2-based/polycrystalline-Si gate stacks

R. J. Carter;E. Cartier;A. Kerber;L. Pantisano.
Applied Physics Letters (2003)

159 Citations

Passivation and interface state density of SiO2/HfO2-based/polycrystalline-Si gate stacks

R. J. Carter;E. Cartier;A. Kerber;L. Pantisano.
Applied Physics Letters (2003)

159 Citations

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