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Robin Degraeve

Robin Degraeve

Imec
Belgium

D-Index & Metrics

Discipline name D-Index World Ranking Current World Ranking National Ranking Current National Ranking Publications Citations
Electronics and Electrical Engineering 66 1146 1092 24 21 480 17019
Materials Science 64 5829 5639 56 54 466 16738

Robin Degraeve publications per year

The chart shows the history of publications by Robin Degraeve between 1994 and 2025, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. Robin Degraeve published across 32 years, from 1994 to 2025, averaging 16 papers a year. Output peaked at 28 publications in 2001. 23 of the 513 publications appeared in the last two years.

No. of publications
5 10 15 20 25
Bar chart. Horizontal axis: year, 1994 to 2025. Vertical axis: number of publications, 0 to 28. Peak 28 publications in 2001. 1994: 1 publication 1995: 3 publications 1996: 9 publications 1997: 7 publications 1998: 9 publications 1999: 19 publications 2000: 12 publications 2001: 28 publications 2002: 23 publications 2003: 28 publications 2004: 27 publications 2005: 27 publications 2006: 21 publications 2007: 17 publications 2008: 13 publications 2009: 22 publications 2010: 26 publications 2011: 18 publications 2012: 22 publications 2013: 27 publications 2014: 25 publications 2015: 19 publications 2016: 13 publications 2017: 11 publications 2018: 13 publications 2019: 13 publications 2020: 6 publications 2021: 7 publications 2022: 12 publications 2023: 12 publications 2024: 11 publications 2025: 12 publications
1994 2025

513 publications in total across all disciplines

View publications per year as a table
Robin Degraeve: publications per year, 1994 to 2025
Year Publications
1994 1
1995 3
1996 9
1997 7
1998 9
1999 19
2000 12
2001 28
2002 23
2003 28
2004 27
2005 27
2006 21
2007 17
2008 13
2009 22
2010 26
2011 18
2012 22
2013 27
2014 25
2015 19
2016 13
2017 11
2018 13
2019 13
2020 6
2021 7
2022 12
2023 12
2024 11
2025 12
Total 513
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Robin Degraeve publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Robin Degraeve sits on this spectrum.

No. of scientists
100 200 300 400
Bar chart with 53 bars. Horizontal axis: publications, 34–53 to 1,065+. Vertical axis: number of scientists, 0 to 445. Most scientists, 445, have 174–193 publications. The last bar groups every scientist with 1,065 publications or more. The highlighted bar, 474–493 publications, is where this scientist sits. 34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34–53 publications 1,065+

This scientist: 480 publications — 82nd percentile

82% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

View publications distribution as a table
Number of Electronics and Electrical Engineering scientists by publication count, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
Publications Scientists This scientist
34–53 24
54–73 52
74–93 114
94–113 203
114–133 269
134–153 355
154–173 403
174–193 445
194–213 430
214–233 431
234–253 399
254–273 366
274–293 335
294–313 300
314–333 276
334–353 250
354–373 214
374–393 187
394–413 152
414–433 169
434–453 147
454–473 111
474–493 117 480
494–513 103
514–533 99
534–553 92
554–573 75
574–593 58
594–613 69
614–633 50
634–653 62
654–673 54
674–693 44
694–713 37
714–733 28
734–753 26
754–773 26
774–793 19
794–813 23
814–833 20
834–853 16
854–873 20
874–893 11
894–913 11
914–933 16
934–953 13
954–973 10
974–993 11
994–1,013 9
1,014–1,033 9
1,034–1,053 10
1,054–1,064 6
1,065+ 99
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Robin Degraeve D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Robin Degraeve sits on this spectrum.

No. of scientists
50 100 150 200 250
Bar chart with 82 bars. Horizontal axis: D-Index, 30 to 111+. Vertical axis: number of scientists, 0 to 263. Most scientists, 263, have 32 D-Index. The last bar groups every scientist with 111 D-Index or more. The highlighted bar, 66 D-Index, is where this scientist sits. 30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 66 D-Index — 84th percentile

84% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

View D-Index distribution as a table
Number of Electronics and Electrical Engineering scientists by D-index, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
D-Index Scientists This scientist
30 178
31 257
32 263
33 262
34 244
35 236
36 211
37 220
38 214
39 214
40 205
41 187
42 194
43 201
44 155
45 189
46 148
47 160
48 134
49 130
50 141
51 156
52 108
53 130
54 112
55 97
56 111
57 102
58 108
59 120
60 103
61 93
62 92
63 74
64 77
65 73
66 64 66
67 69
68 60
69 39
70 57
71 59
72 46
73 49
74 38
75 35
76 32
77 35
78 31
79 22
80 34
81 31
82 34
83 23
84 18
85 30
86 19
87 19
88 20
89 8
90 17
91 7
92 14
93 9
94 15
95 10
96 12
97 10
98 10
99 12
100 16
101 5
102 7
103 7
104 8
105 9
106 13
107 4
108 5
109 10
110 8
111+ 96
Download as CSV

Overview

Robin Degraeve is affiliated with Imec in Belgium, focusing primarily on research within the fields of Engineering and Materials Science. Their work concentrates heavily on electrical and electronic engineering as well as materials chemistry. The subfields connected to their research also include artificial intelligence, atomic and molecular physics, optics, and the study of electronic, optical, and magnetic materials.

The scientist has published extensively on topics related to advanced memory and neural computing, semiconductor materials and devices, phase-change materials and chalcogenides, advancements in semiconductor devices and circuit design, integrated circuits and semiconductor failure analysis, ferroelectric and negative capacitance devices, and semiconductor materials and interfaces.

Frequent coauthors of Robin Degraeve include Sergiu Clima, Daniele Garbin, Gouri Sankar Kar, B. Kaczer, and A. Fantini. These collaborations reflect ongoing research efforts in related technical areas.

Their publication venues demonstrate a focus on specialized electronics and device engineering platforms. These include:

  • IEEE Transactions on Electron Devices
  • IEEE Electron Device Letters
  • 2022 IEEE International Reliability Physics Symposium (IRPS)
  • Solid-State Electronics
  • physica status solidi (RRL) - Rapid Research Letters

Selected recent papers authored or coauthored by Robin Degraeve are:

  • "Chalcogenide Ovonic Threshold Switching Selector," 2024, Nano-Micro Letters
  • "Defect profiling in FEFET Si:HfO2 layers," 2020, Applied Physics Letters
  • "Self-Rectifying Memory Cell Based on SiGeAsSe Ovonic Threshold Switch," 2023, IEEE Transactions on Electron Devices
  • "Ovonic Threshold Switch Chalcogenides: Connecting the First-Principles Electronic Structure to Selector Device Parameters," 2022, ACS Applied Electronic Materials
  • "Polarity-dependent threshold voltage shift in ovonic threshold switches: Challenges and opportunities," 2021, 2021 IEEE International Electron Devices Meeting (IEDM)

Best Publications

  • Ultrathin (<4 nm) SiO2 and Si-O-N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limits

    M. L. Green;E. P. Gusev;R. Degraeve;Eric Garfunkel

  • New insights in the relation between electron trap generation and the statistical properties of oxide breakdown

    R. Degraeve;G. Groeseneken;R. Bellens;J.L. Ogier

  • 10×10nm 2 Hf/HfO x crossbar resistive RAM with excellent performance, reliability and low-energy operation

    B. Govoreanu;G.S. Kar;Y-Y. Chen;V. Paraschiv

  • A consistent model for the thickness dependence of intrinsic breakdown in ultra-thin oxides

    R. Degraeve;G. Groeseneken;R. Bellens;M. Depas

  • Origin of the threshold voltage instability in SiO 2 /HfO 2 dual layer gate dielectrics

    A. Kerber;E. Cartier;L. Pantisano;R. Degraeve

  • Origin of NBTI variability in deeply scaled pFETs

    B. Kaczer;T. Grasser;Ph. J. Roussel;J. Franco

  • Electrical properties of high-κ gate dielectrics: Challenges, current issues, and possible solutions

    M. Houssa;L. Pantisano;L.-Å. Ragnarsson;R. Degraeve

  • High-k dielectrics for future generation memory devices (Invited Paper)

    J. A. Kittl;K. Opsomer;M. Popovici;N. Menou

  • Endurance/Retention Trade-off on $\hbox{HfO}_{2}/\hbox{Metal}$ Cap 1T1R Bipolar RRAM

    Yang Yin Chen;L. Goux;S. Clima;B. Govoreanu

  • Evidences of oxygen-mediated resistive-switching mechanism in TiN\HfO2\Pt cells

    Ludovic Goux;Piotr Czarnecki;Yang Yin Chen;Luigi Pantisano

  • Impact of MOSFET gate oxide breakdown on digital circuit operation and reliability

    B. Kaczer;R. Degraeve;G. Groeseneken;M. Rasras

  • Consistent model for short-channel nMOSFET after hard gate oxide breakdown

    B. Kaczer;R. Degraeve;A. De Keersgieter;K. Van de Mieroop

  • Intrinsic switching variability in HfO 2 RRAM

    A. Fantini;L. Goux;R. Degraeve;D. J. Wouters

  • Balancing SET/RESET Pulse for $>\hbox{10}^{10}$ Endurance in $\hbox{HfO}_{2}\hbox{/Hf}$ 1T1R Bipolar RRAM

    Yang Yin Chen;B. Govoreanu;L. Goux;R. Degraeve

  • Degradation and breakdown in thin oxide layers: mechanisms, models and reliability prediction

    Robin Degraeve;Ben Kaczer;Guido Groeseneken

  • Disorder-controlled-kinetics model for negative bias temperature instability and its experimental verification

    B. Kaczer;V. Arkhipov;R. Degraeve;N. Collaert

  • Imaging the Three-Dimensional Conductive Channel in Filamentary-Based Oxide Resistive Switching Memory

    Umberto Celano;Ludovic Goux;Robin Degraeve;Andrea Fantini

  • Characterization of the V/sub T/-instability in SiO/sub 2//HfO/sub 2/ gate dielectrics

    A. Kerber;E. Cartier;L. Pantisano;M. Rosmeulen

  • A new model for the field dependence of intrinsic and extrinsic time-dependent dielectric breakdown

    R. Degraeve;J.L. Ogier;R. Bellens;P.J. Roussel

  • Relation between breakdown mode and breakdown location in short channel NMOSFETs and its impact on reliability specifications

    R. Degraeve;B. Kaczer;A. De Keersgieter;G. Groeseneken

Frequent Co-Authors

Guido Groeseneken
Guido Groeseneken Imec
Ben Kaczer
Ben Kaczer Imec
Malgorzata Jurczak
Malgorzata Jurczak Lam Research
Ludovic Goux
Ludovic Goux Imec
Bogdan Govoreanu
Bogdan Govoreanu Imec
Luigi Pantisano
Luigi Pantisano Intel (United States)
Gouri Sankar Kar
Gouri Sankar Kar Imec
Dirk Wouters
Dirk Wouters RWTH Aachen University
J. Van Houdt
J. Van Houdt Imec
Herman Maes
Herman Maes Imec

External Links

Personal website of Robin Degraeve Google Scholar page

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Best Scientists Citing Robin Degraeve

Guido Groeseneken

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Publications: 168

Ben Kaczer

Ben Kaczer

Imec

Publications: 152

Tibor Grasser

Tibor Grasser

TU Wien

Publications: 117

Montserrat Nafría

Montserrat Nafría

Autonomous University of Barcelona

Publications: 97

Gennadi Bersuker

Gennadi Bersuker

The Aerospace Corporation

Publications: 80

Jordi Suñé

Jordi Suñé

Autonomous University of Barcelona

Publications: 79

Rainer Waser

Rainer Waser

RWTH Aachen University

Publications: 77

Enrique Miranda

Enrique Miranda

Autonomous University of Barcelona

Publications: 76

Jacopo Franco

Jacopo Franco

Imec

Publications: 75

Eddy Simoen

Eddy Simoen

Ghent University

Publications: 65

Malgorzata Jurczak

Malgorzata Jurczak

Lam Research

Publications: 61

Luca Larcher

Luca Larcher

University of Modena and Reggio Emilia

Publications: 56

Kin Leong Pey

Kin Leong Pey

Singapore University of Technology and Design

Publications: 54

Ernest Y. Wu

Ernest Y. Wu

IBM (United States)

Publications: 51

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Byoung Hun Lee

Pohang University of Science and Technology

Publications: 51

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Ming Liu

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