World's Best Scientists 2026 revealed!
Robin Degraeve

Robin Degraeve

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
66
Citations
17019
World Ranking
1146
National Ranking
24

Materials Science

D-Index
64
Citations
16738
World Ranking
5831
National Ranking
56

Overview

Robin Degraeve is affiliated with Imec in Belgium, focusing primarily on research within the fields of Engineering and Materials Science. Their work concentrates heavily on electrical and electronic engineering as well as materials chemistry. The subfields connected to their research also include artificial intelligence, atomic and molecular physics, optics, and the study of electronic, optical, and magnetic materials.

The scientist has published extensively on topics related to advanced memory and neural computing, semiconductor materials and devices, phase-change materials and chalcogenides, advancements in semiconductor devices and circuit design, integrated circuits and semiconductor failure analysis, ferroelectric and negative capacitance devices, and semiconductor materials and interfaces.

Frequent coauthors of Robin Degraeve include Sergiu Clima, Daniele Garbin, Gouri Sankar Kar, B. Kaczer, and A. Fantini. These collaborations reflect ongoing research efforts in related technical areas.

Their publication venues demonstrate a focus on specialized electronics and device engineering platforms. These include:

  • IEEE Transactions on Electron Devices
  • IEEE Electron Device Letters
  • 2022 IEEE International Reliability Physics Symposium (IRPS)
  • Solid-State Electronics
  • physica status solidi (RRL) - Rapid Research Letters

Selected recent papers authored or coauthored by Robin Degraeve are:

  • "Chalcogenide Ovonic Threshold Switching Selector," 2024, Nano-Micro Letters
  • "Defect profiling in FEFET Si:HfO2 layers," 2020, Applied Physics Letters
  • "Self-Rectifying Memory Cell Based on SiGeAsSe Ovonic Threshold Switch," 2023, IEEE Transactions on Electron Devices
  • "Ovonic Threshold Switch Chalcogenides: Connecting the First-Principles Electronic Structure to Selector Device Parameters," 2022, ACS Applied Electronic Materials
  • "Polarity-dependent threshold voltage shift in ovonic threshold switches: Challenges and opportunities," 2021, 2021 IEEE International Electron Devices Meeting (IEDM)

Best Publications

  • Ultrathin (<4 nm) SiO2 and Si-O-N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limits

    M. L. Green;E. P. Gusev;R. Degraeve;Eric Garfunkel

  • New insights in the relation between electron trap generation and the statistical properties of oxide breakdown

    R. Degraeve;G. Groeseneken;R. Bellens;J.L. Ogier

  • 10×10nm 2 Hf/HfO x crossbar resistive RAM with excellent performance, reliability and low-energy operation

    B. Govoreanu;G.S. Kar;Y-Y. Chen;V. Paraschiv

  • A consistent model for the thickness dependence of intrinsic breakdown in ultra-thin oxides

    R. Degraeve;G. Groeseneken;R. Bellens;M. Depas

  • Origin of the threshold voltage instability in SiO 2 /HfO 2 dual layer gate dielectrics

    A. Kerber;E. Cartier;L. Pantisano;R. Degraeve

  • Origin of NBTI variability in deeply scaled pFETs

    B. Kaczer;T. Grasser;Ph. J. Roussel;J. Franco

  • Electrical properties of high-κ gate dielectrics: Challenges, current issues, and possible solutions

    M. Houssa;L. Pantisano;L.-Å. Ragnarsson;R. Degraeve

  • High-k dielectrics for future generation memory devices (Invited Paper)

    J. A. Kittl;K. Opsomer;M. Popovici;N. Menou

  • Endurance/Retention Trade-off on $\hbox{HfO}_{2}/\hbox{Metal}$ Cap 1T1R Bipolar RRAM

    Yang Yin Chen;L. Goux;S. Clima;B. Govoreanu

  • Evidences of oxygen-mediated resistive-switching mechanism in TiN\HfO2\Pt cells

    Ludovic Goux;Piotr Czarnecki;Yang Yin Chen;Luigi Pantisano

  • Impact of MOSFET gate oxide breakdown on digital circuit operation and reliability

    B. Kaczer;R. Degraeve;G. Groeseneken;M. Rasras

  • Consistent model for short-channel nMOSFET after hard gate oxide breakdown

    B. Kaczer;R. Degraeve;A. De Keersgieter;K. Van de Mieroop

  • Intrinsic switching variability in HfO 2 RRAM

    A. Fantini;L. Goux;R. Degraeve;D. J. Wouters

  • Balancing SET/RESET Pulse for $>\hbox{10}^{10}$ Endurance in $\hbox{HfO}_{2}\hbox{/Hf}$ 1T1R Bipolar RRAM

    Yang Yin Chen;B. Govoreanu;L. Goux;R. Degraeve

  • Degradation and breakdown in thin oxide layers: mechanisms, models and reliability prediction

    Robin Degraeve;Ben Kaczer;Guido Groeseneken

  • Disorder-controlled-kinetics model for negative bias temperature instability and its experimental verification

    B. Kaczer;V. Arkhipov;R. Degraeve;N. Collaert

  • Imaging the Three-Dimensional Conductive Channel in Filamentary-Based Oxide Resistive Switching Memory

    Umberto Celano;Ludovic Goux;Robin Degraeve;Andrea Fantini

  • Characterization of the V/sub T/-instability in SiO/sub 2//HfO/sub 2/ gate dielectrics

    A. Kerber;E. Cartier;L. Pantisano;M. Rosmeulen

  • A new model for the field dependence of intrinsic and extrinsic time-dependent dielectric breakdown

    R. Degraeve;J.L. Ogier;R. Bellens;P.J. Roussel

  • Relation between breakdown mode and breakdown location in short channel NMOSFETs and its impact on reliability specifications

    R. Degraeve;B. Kaczer;A. De Keersgieter;G. Groeseneken

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