World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
33
Citations
4847
World Ranking
6039
National Ranking
2015

Overview

Ernest Y. Wu is affiliated with IBM in the United States and has contributed significantly to research in the field of engineering, with a primary focus on electrical and electronic engineering.

Their scholarly output spans several key topics within semiconductor research and device technology. These include semiconductor materials and devices, advanced memory and neural computing, advancements in semiconductor devices and circuit design, ferroelectric and negative capacitance devices, integrated circuits and semiconductor failure analysis, copper interconnects and reliability, and advancements in photolithography techniques.

Wu's publication record demonstrates a focus on resistive memory technologies and device reliability. Notable recent papers include:

  • "Resistive Random Access Memory Filament Visualization and Characterization Using Photon Emission Microscopy," 2021, IEEE Electron Device Letters
  • "Fundamental roles of extreme-value distributions in dielectric breakdown and memory applications (minimum-value versus maximum-value statistics)," 2020, Japanese Journal of Applied Physics
  • "Resistive Memory Process Optimization for High Resistance Switching Toward Scalable Analog Compute Technology for Deep Learning," 2021, IEEE Electron Device Letters
  • "A maximum extreme-value distribution model for switching conductance of oxide-RRAM in memory applications," 2020, Applied Physics Letters
  • "A Flexible and Inherently Self-Consistent Methodology for MOL/BEOL/MIMCAP TDDB Applications with Excessive Variability-Induced Degradation," 2022, 2022 IEEE International Reliability Physics Symposium (IRPS)

Frequent collaborators in their research include Takashi Ando, Franco Stellari, Peilin Song, Baozhen Li, and Martin M. Frank.

Wu has published regularly in venues that specialize in electronic device and applied physics domains, including:

  • IEEE Electron Device Letters
  • Applied Physics Letters
  • 2022 IEEE International Reliability Physics Symposium (IRPS)
  • Japanese Journal of Applied Physics
  • Journal of Applied Physics

The subfields in which Wu mainly contributes are electrical and electronic engineering, electronic, optical and magnetic materials, pharmacology, materials chemistry, and cognitive neuroscience.

Best Publications

  • Recommended Methods to Study Resistive Switching Devices

    Mario Lanza;H.-S. Philip Wong;Eric Pop;Daniele Ielmini

  • Reliability Wearout Mechanisms in Advanced CMOS Technologies

    Alvin W. Strong;Ernest Y. Wu;Rolf-Peter Vollertsen;Jordi Sune

  • Power-law voltage acceleration: A key element for ultra-thin gate oxide reliability

    Ernest Y. Wu;Jordi Suñé

  • On the Weibull shape factor of intrinsic breakdown of dielectric films and its accurate experimental determination. Part I: theory, methodology, experimental techniques

    E.Y. Wu;R.-P. Vollertsen

  • Interplay of voltage and temperature acceleration of oxide breakdown for ultra-thin gate oxides

    Ernest Y. Wu;Jordi Suñé;Wing L. Lai;Edward J. Nowak

  • Ultra-thin oxide reliability for ULSI applications

    Ernest Y Wu;James H Stathis;Liang-Kai Han

  • Experimental evidence of T/sub BD/ power-law for voltage dependence of oxide breakdown in ultrathin gate oxides

    E.Y. Wu;A. Vayshenker;E. Nowak;J. Sune

  • Voltage-dependent voltage-acceleration of oxide breakdown for ultra-thin oxides

    E.Y. Wu;J. Aitken;E. Nowak;A. Vayshenker

  • On the Weibull shape factor of intrinsic breakdown of dielectric films and its accurate experimental determination. Part II: experimental results and the effects of stress conditions

    E.Y. Wu;J. Sune;W. Lai

  • A manufacturable dual channel (Si and SiGe) high-k metal gate CMOS technology with multiple oxides for high performance and low power applications

    S. Krishnan;U. Kwon;N. Moumen;M.W. Stoker

  • Challenges for accurate reliability projections in the ultra-thin oxide regime

    E.Y. Wu;W.W. Abadeer;Liang-Kai Han;Shin-Hsien Lo

  • Boron nitride as two dimensional dielectric: Reliability and dielectric breakdown

    Yanfeng Ji;Chengbin Pan;Meiyun Zhang;Shibing Long

  • CMOS scaling beyond the 100-nm node with silicon-dioxide-based gate dielectrics

    E. Y. Wu;E. J. Nowak;A. Vayshenker;W. L. Lai

  • Structural dependence of dielectric breakdown in ultra-thin gate oxides and its relationship to soft breakdown modes and device failure

    E. Wu;E. Nowak;J. Aitken;W. Abadeer

  • Hydrogen-release mechanisms in the breakdown of thin SiO2 films.

    Jordi Suñé;E. Y. Wu

  • Monte Carlo calculation of temperature dependence of the transport properties in compensated GaAs

    Ernest Y. Wu;Bernard H. Yu

  • Gate oxide breakdown under Current Limited Constant Voltage Stress

    B.P. Linder;J.H. Stathis;R.A. Wachnik;E. Wu

  • Modeling of time-dependent non-uniform dielectric breakdown using a clustering statistical approach

    Ernest Y. Wu;Baozhen Li;James H. Stathis

  • Statistics of successive breakdown events in gate oxides

    J. Sune;E.Y. Wu

  • Weibull breakdown characteristics and oxide thickness uniformity

    E.Y. Wu;E.J. Nowak;R.-P. Vollertsen;L.-K. Han

  • Facts and Myths of Dielectric Breakdown Processes—Part I: Statistics, Experimental, and Physical Acceleration Models

    Ernest Y. Wu

  • Analytical Cell-Based Model for the Breakdown Statistics of Multilayer Insulator Stacks

    J. Sune;S. Tous;E.Y. Wu

Frequent Co-Authors

James H. Stathis
James H. Stathis IBM (United States)
Eduard A. Cartier
Eduard A. Cartier IBM (United States)
Vijay Narayanan
Vijay Narayanan IBM (United States)
Enrique Miranda
Enrique Miranda Autonomous University of Barcelona
Martin M. Frank
Martin M. Frank IBM (United States)
Shibing Long
Shibing Long University of Science and Technology of China
Michael P. Chudzik
Michael P. Chudzik IBM (United States)
Luca Larcher
Luca Larcher University of Modena and Reggio Emilia
Dominic J. Schepis
Dominic J. Schepis Global Foundries
Mario Lanza
Mario Lanza National University of Singapore

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