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Ernest Y. Wu

D-Index & Metrics

Discipline name D-Index World Ranking Current World Ranking National Ranking Current National Ranking Publications Citations
Electronics and Electrical Engineering 33 6039 5797 2016 1880 149 4847

Ernest Y. Wu publications per year

The chart shows the history of publications by Ernest Y. Wu between 1990 and 2025, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. Ernest Y. Wu published across 36 years, from 1990 to 2025, averaging 4.7 papers a year. Output peaked at 14 publications in 2002. 9 of the 169 publications appeared in the last two years.

No. of publications
5 10
Bar chart. Horizontal axis: year, 1990 to 2025. Vertical axis: number of publications, 0 to 14. Peak 14 publications in 2002. 1990: 4 publications 1991: 5 publications 1992: 1 publication 1993: 0 publications 1994: 2 publications 1995: 1 publication 1996: 0 publications 1997: 3 publications 1998: 1 publication 1999: 2 publications 2000: 8 publications 2001: 9 publications 2002: 14 publications 2003: 8 publications 2004: 8 publications 2005: 6 publications 2006: 6 publications 2007: 5 publications 2008: 4 publications 2009: 7 publications 2010: 4 publications 2011: 4 publications 2012: 5 publications 2013: 7 publications 2014: 6 publications 2015: 3 publications 2016: 4 publications 2017: 4 publications 2018: 2 publications 2019: 7 publications 2020: 3 publications 2021: 5 publications 2022: 7 publications 2023: 5 publications 2024: 5 publications 2025: 4 publications
1990 2025

169 publications in total across all disciplines

View publications per year as a table
Ernest Y. Wu: publications per year, 1990 to 2025
Year Publications
1990 4
1991 5
1992 1
1993 0
1994 2
1995 1
1996 0
1997 3
1998 1
1999 2
2000 8
2001 9
2002 14
2003 8
2004 8
2005 6
2006 6
2007 5
2008 4
2009 7
2010 4
2011 4
2012 5
2013 7
2014 6
2015 3
2016 4
2017 4
2018 2
2019 7
2020 3
2021 5
2022 7
2023 5
2024 5
2025 4
Total 169
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Ernest Y. Wu publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Ernest Y. Wu sits on this spectrum.

No. of scientists
100 200 300 400
Bar chart with 53 bars. Horizontal axis: publications, 34–53 to 1,065+. Vertical axis: number of scientists, 0 to 445. Most scientists, 445, have 174–193 publications. The last bar groups every scientist with 1,065 publications or more. The highlighted bar, 134–153 publications, is where this scientist sits. 34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34–53 publications 1,065+

This scientist: 149 publications — 14th percentile

14% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

View publications distribution as a table
Number of Electronics and Electrical Engineering scientists by publication count, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
Publications Scientists This scientist
34–53 24
54–73 52
74–93 114
94–113 203
114–133 269
134–153 355 149
154–173 403
174–193 445
194–213 430
214–233 431
234–253 399
254–273 366
274–293 335
294–313 300
314–333 276
334–353 250
354–373 214
374–393 187
394–413 152
414–433 169
434–453 147
454–473 111
474–493 117
494–513 103
514–533 99
534–553 92
554–573 75
574–593 58
594–613 69
614–633 50
634–653 62
654–673 54
674–693 44
694–713 37
714–733 28
734–753 26
754–773 26
774–793 19
794–813 23
814–833 20
834–853 16
854–873 20
874–893 11
894–913 11
914–933 16
934–953 13
954–973 10
974–993 11
994–1,013 9
1,014–1,033 9
1,034–1,053 10
1,054–1,064 6
1,065+ 99
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Ernest Y. Wu D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Ernest Y. Wu sits on this spectrum.

No. of scientists
50 100 150 200 250
Bar chart with 82 bars. Horizontal axis: D-Index, 30 to 111+. Vertical axis: number of scientists, 0 to 263. Most scientists, 263, have 32 D-Index. The last bar groups every scientist with 111 D-Index or more. The highlighted bar, 33 D-Index, is where this scientist sits. 30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 33 D-Index — 14th percentile

14% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

View D-Index distribution as a table
Number of Electronics and Electrical Engineering scientists by D-index, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
D-Index Scientists This scientist
30 178
31 257
32 263
33 262 33
34 244
35 236
36 211
37 220
38 214
39 214
40 205
41 187
42 194
43 201
44 155
45 189
46 148
47 160
48 134
49 130
50 141
51 156
52 108
53 130
54 112
55 97
56 111
57 102
58 108
59 120
60 103
61 93
62 92
63 74
64 77
65 73
66 64
67 69
68 60
69 39
70 57
71 59
72 46
73 49
74 38
75 35
76 32
77 35
78 31
79 22
80 34
81 31
82 34
83 23
84 18
85 30
86 19
87 19
88 20
89 8
90 17
91 7
92 14
93 9
94 15
95 10
96 12
97 10
98 10
99 12
100 16
101 5
102 7
103 7
104 8
105 9
106 13
107 4
108 5
109 10
110 8
111+ 96
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Overview

Ernest Y. Wu is affiliated with IBM in the United States and has contributed significantly to research in the field of engineering, with a primary focus on electrical and electronic engineering.

Their scholarly output spans several key topics within semiconductor research and device technology. These include semiconductor materials and devices, advanced memory and neural computing, advancements in semiconductor devices and circuit design, ferroelectric and negative capacitance devices, integrated circuits and semiconductor failure analysis, copper interconnects and reliability, and advancements in photolithography techniques.

Wu's publication record demonstrates a focus on resistive memory technologies and device reliability. Notable recent papers include:

  • "Resistive Random Access Memory Filament Visualization and Characterization Using Photon Emission Microscopy," 2021, IEEE Electron Device Letters
  • "Fundamental roles of extreme-value distributions in dielectric breakdown and memory applications (minimum-value versus maximum-value statistics)," 2020, Japanese Journal of Applied Physics
  • "Resistive Memory Process Optimization for High Resistance Switching Toward Scalable Analog Compute Technology for Deep Learning," 2021, IEEE Electron Device Letters
  • "A maximum extreme-value distribution model for switching conductance of oxide-RRAM in memory applications," 2020, Applied Physics Letters
  • "A Flexible and Inherently Self-Consistent Methodology for MOL/BEOL/MIMCAP TDDB Applications with Excessive Variability-Induced Degradation," 2022, 2022 IEEE International Reliability Physics Symposium (IRPS)

Frequent collaborators in their research include Takashi Ando, Franco Stellari, Peilin Song, Baozhen Li, and Martin M. Frank.

Wu has published regularly in venues that specialize in electronic device and applied physics domains, including:

  • IEEE Electron Device Letters
  • Applied Physics Letters
  • 2022 IEEE International Reliability Physics Symposium (IRPS)
  • Japanese Journal of Applied Physics
  • Journal of Applied Physics

The subfields in which Wu mainly contributes are electrical and electronic engineering, electronic, optical and magnetic materials, pharmacology, materials chemistry, and cognitive neuroscience.

Best Publications

  • Recommended Methods to Study Resistive Switching Devices

    Mario Lanza;H.-S. Philip Wong;Eric Pop;Daniele Ielmini

  • Reliability Wearout Mechanisms in Advanced CMOS Technologies

    Alvin W. Strong;Ernest Y. Wu;Rolf-Peter Vollertsen;Jordi Sune

  • Power-law voltage acceleration: A key element for ultra-thin gate oxide reliability

    Ernest Y. Wu;Jordi Suñé

  • On the Weibull shape factor of intrinsic breakdown of dielectric films and its accurate experimental determination. Part I: theory, methodology, experimental techniques

    E.Y. Wu;R.-P. Vollertsen

  • Interplay of voltage and temperature acceleration of oxide breakdown for ultra-thin gate oxides

    Ernest Y. Wu;Jordi Suñé;Wing L. Lai;Edward J. Nowak

  • Ultra-thin oxide reliability for ULSI applications

    Ernest Y Wu;James H Stathis;Liang-Kai Han

  • Experimental evidence of T/sub BD/ power-law for voltage dependence of oxide breakdown in ultrathin gate oxides

    E.Y. Wu;A. Vayshenker;E. Nowak;J. Sune

  • Voltage-dependent voltage-acceleration of oxide breakdown for ultra-thin oxides

    E.Y. Wu;J. Aitken;E. Nowak;A. Vayshenker

  • On the Weibull shape factor of intrinsic breakdown of dielectric films and its accurate experimental determination. Part II: experimental results and the effects of stress conditions

    E.Y. Wu;J. Sune;W. Lai

  • A manufacturable dual channel (Si and SiGe) high-k metal gate CMOS technology with multiple oxides for high performance and low power applications

    S. Krishnan;U. Kwon;N. Moumen;M.W. Stoker

  • Challenges for accurate reliability projections in the ultra-thin oxide regime

    E.Y. Wu;W.W. Abadeer;Liang-Kai Han;Shin-Hsien Lo

  • Boron nitride as two dimensional dielectric: Reliability and dielectric breakdown

    Yanfeng Ji;Chengbin Pan;Meiyun Zhang;Shibing Long

  • CMOS scaling beyond the 100-nm node with silicon-dioxide-based gate dielectrics

    E. Y. Wu;E. J. Nowak;A. Vayshenker;W. L. Lai

  • Structural dependence of dielectric breakdown in ultra-thin gate oxides and its relationship to soft breakdown modes and device failure

    E. Wu;E. Nowak;J. Aitken;W. Abadeer

  • Hydrogen-release mechanisms in the breakdown of thin SiO2 films.

    Jordi Suñé;E. Y. Wu

  • Monte Carlo calculation of temperature dependence of the transport properties in compensated GaAs

    Ernest Y. Wu;Bernard H. Yu

  • Gate oxide breakdown under Current Limited Constant Voltage Stress

    B.P. Linder;J.H. Stathis;R.A. Wachnik;E. Wu

  • Modeling of time-dependent non-uniform dielectric breakdown using a clustering statistical approach

    Ernest Y. Wu;Baozhen Li;James H. Stathis

  • Statistics of successive breakdown events in gate oxides

    J. Sune;E.Y. Wu

  • Weibull breakdown characteristics and oxide thickness uniformity

    E.Y. Wu;E.J. Nowak;R.-P. Vollertsen;L.-K. Han

  • Facts and Myths of Dielectric Breakdown Processes—Part I: Statistics, Experimental, and Physical Acceleration Models

    Ernest Y. Wu

  • Analytical Cell-Based Model for the Breakdown Statistics of Multilayer Insulator Stacks

    J. Sune;S. Tous;E.Y. Wu

Frequent Co-Authors

Jordi Suñé
Jordi Suñé Autonomous University of Barcelona
James H. Stathis
James H. Stathis IBM (United States)
Eduard A. Cartier
Eduard A. Cartier IBM (United States)
Vijay Narayanan
Vijay Narayanan IBM (United States)
Martin M. Frank
Martin M. Frank IBM (United States)
Enrique Miranda
Enrique Miranda Autonomous University of Barcelona
Shibing Long
Shibing Long University of Science and Technology of China
Michael P. Chudzik
Michael P. Chudzik IBM (United States)
Luca Larcher
Luca Larcher University of Modena and Reggio Emilia
Mario Lanza
Mario Lanza National University of Singapore

External Links

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Best Scientists Citing Ernest Y. Wu

Guido Groeseneken

Guido Groeseneken

Imec

Publications: 72

Enrique Miranda

Enrique Miranda

Autonomous University of Barcelona

Publications: 55

Mario Lanza

Mario Lanza

National University of Singapore

Publications: 50

Jordi Suñé

Jordi Suñé

Autonomous University of Barcelona

Publications: 41

Robin Degraeve

Robin Degraeve

Imec

Publications: 40

Ben Kaczer

Ben Kaczer

Imec

Publications: 36

Kin Leong Pey

Kin Leong Pey

Singapore University of Technology and Design

Publications: 29

Tibor Grasser

Tibor Grasser

TU Wien

Publications: 24

Muhammad A. Alam

Muhammad A. Alam

Purdue University West Lafayette

Publications: 24

Montserrat Nafría

Montserrat Nafría

Autonomous University of Barcelona

Publications: 22

James H. Stathis

James H. Stathis

IBM (United States)

Publications: 21

Michel Bosman

Michel Bosman

National University of Singapore

Publications: 21

Shibing Long

Shibing Long

University of Science and Technology of China

Publications: 20

Ye Zhou

Ye Zhou

Shenzhen University

Publications: 19

Su-Ting Han

Su-Ting Han

Shenzhen University

Publications: 19

Ming Liu

Ming Liu

Fudan University

Publications: 18

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