Dominic J. Schepis mainly focuses on Optoelectronics, Silicon on insulator, Electronic engineering, CMOS and Electrical engineering. His study in Optoelectronics is interdisciplinary in nature, drawing from both Layer, Nanotechnology and Field-effect transistor. His research in Layer intersects with topics in Monocrystalline silicon and Semiconductor.
His research integrates issues of Transistor and Stress in his study of Silicon on insulator. His work carried out in the field of Electronic engineering brings together such families of science as Schottky diode, Schottky barrier, Metal–semiconductor junction, Oxide and Silicide. His CMOS research incorporates elements of Dram and MOSFET.
Dominic J. Schepis mainly investigates Optoelectronics, Silicon on insulator, Electronic engineering, Layer and Silicon. In his study, Epitaxy is inextricably linked to Substrate, which falls within the broad field of Optoelectronics. His Silicon on insulator study which covers Semiconductor that intersects with Dielectric.
As a part of the same scientific family, Dominic J. Schepis mostly works in the field of Electronic engineering, focusing on Germanium and, on occasion, Aluminium. The Layer study combines topics in areas such as Monocrystalline silicon and Dopant. His research on Silicon often connects related areas such as Etching.
Dominic J. Schepis focuses on Optoelectronics, Electronic engineering, Semiconductor, Semiconductor device and Substrate. His Optoelectronics study integrates concerns from other disciplines, such as Layer, Epitaxy and Oxide. Dominic J. Schepis has included themes like Field-effect transistor and Silicon in his Oxide study.
Dominic J. Schepis works on Electronic engineering which deals in particular with CMOS. He combines subjects such as Silicon on insulator and Dielectric with his study of Semiconductor. The Silicon on insulator study combines topics in areas such as Trench and Insulator.
His main research concerns Electronic engineering, Optoelectronics, Semiconductor device, Doping and Semiconductor materials. His Electronic engineering research incorporates elements of Semiconductor, Dielectric, Composite number, Composite material and Nitride. His study in Optoelectronics is interdisciplinary in nature, drawing from both Diffraction, Transistor, MOSFET, Heterostructure-emitter bipolar transistor and Electrical engineering.
His Semiconductor device study integrates concerns from other disciplines, such as Reciprocal lattice, Epitaxy, Deformation, X-ray crystallography and Electron backscatter diffraction.
Doris Brews B;Zidambarao Dursedi
Effendi Leobandung;Devendra K. Sadana;Dominic J. Schepis;Ghavam G. Shahidi
C-H. Lin;B. Greene;S. Narasimha;J. Cai
S. Narasimha;K. Onishi;H. M. Nayfeh;A. Waite
S. Krishnan;U. Kwon;N. Moumen;M.W. Stoker
Michael P. Chudzik;Dominic J. Schepis;Linda Black
G.G. Shahidi;A. Ajmera;F. Assaderaghi;R.J. Bolam
Dominic J. Schepis;Huilong Zhu
M. Horstmann;A. Wei;T. Kammler;J. Hontschel
Leobandung Effendi;Sadana Devendra K;Schepis Dominic J;Shahidi Ghavam
Chakravarti Ashima B;Holt Judson;Chan Kevin K;Deshpande Sadanand
John S. Lechaton;Shashi D. Malaviya;Dominic J. Schepis;Gurumakonda R. Srinivasan
Diane C. Boyd;Hussein I. Hanafi;Erin C. Jones;Dominic J. Schepis
Huajie Chen;Dureseti Chidambarrao;Dominic J. Schepis;Henry K. Utomo
F. Assaderaghi;W. Rausch;A. Ajmera;E. Leobandung
Dominic Joseph Schepis;Joseph Francis Shepard
W.-H. Lee;A. Waite;H. Nii;H.M. Nayfeh
Atul Ajmera;Effendi Leobandung;Werner Rausch;Dominic J Schepis
Dominic Joseph Schepis;Kris Venkatraman Srikrishnan;Seshadri Subbanna;Manu Jamnadas Tejwani
D.J. Schepis;F. Assaderaghi;D.S. Yee;W. Rausch
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