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Dominic J. Schepis

Dominic J. Schepis

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
32
Citations
4021
World Ranking
6352
National Ranking
2092

Overview

What is he best known for?

The fields of study he is best known for:

  • Semiconductor
  • Electrical engineering
  • Integrated circuit

Dominic J. Schepis mainly focuses on Optoelectronics, Silicon on insulator, Electronic engineering, CMOS and Electrical engineering. His study in Optoelectronics is interdisciplinary in nature, drawing from both Layer, Nanotechnology and Field-effect transistor. His research in Layer intersects with topics in Monocrystalline silicon and Semiconductor.

His research integrates issues of Transistor and Stress in his study of Silicon on insulator. His work carried out in the field of Electronic engineering brings together such families of science as Schottky diode, Schottky barrier, Metal–semiconductor junction, Oxide and Silicide. His CMOS research incorporates elements of Dram and MOSFET.

His most cited work include:

  • Epitaxial growth of silicon doped with carbon and phosphorus using hydrogen carrier gas (139 citations)
  • Handbook of Thin Film Deposition (122 citations)
  • SOI based field effect transistor having a compressive film in undercut area under the channel and a method of making the device (110 citations)

What are the main themes of his work throughout his whole career to date?

Dominic J. Schepis mainly investigates Optoelectronics, Silicon on insulator, Electronic engineering, Layer and Silicon. In his study, Epitaxy is inextricably linked to Substrate, which falls within the broad field of Optoelectronics. His Silicon on insulator study which covers Semiconductor that intersects with Dielectric.

As a part of the same scientific family, Dominic J. Schepis mostly works in the field of Electronic engineering, focusing on Germanium and, on occasion, Aluminium. The Layer study combines topics in areas such as Monocrystalline silicon and Dopant. His research on Silicon often connects related areas such as Etching.

He most often published in these fields:

  • Optoelectronics (77.36%)
  • Silicon on insulator (40.88%)
  • Electronic engineering (36.48%)

What were the highlights of his more recent work (between 2012-2019)?

  • Optoelectronics (77.36%)
  • Electronic engineering (36.48%)
  • Semiconductor (13.84%)

In recent papers he was focusing on the following fields of study:

Dominic J. Schepis focuses on Optoelectronics, Electronic engineering, Semiconductor, Semiconductor device and Substrate. His Optoelectronics study integrates concerns from other disciplines, such as Layer, Epitaxy and Oxide. Dominic J. Schepis has included themes like Field-effect transistor and Silicon in his Oxide study.

Dominic J. Schepis works on Electronic engineering which deals in particular with CMOS. He combines subjects such as Silicon on insulator and Dielectric with his study of Semiconductor. The Silicon on insulator study combines topics in areas such as Trench and Insulator.

Between 2012 and 2019, his most popular works were:

  • High performance 14nm SOI FinFET CMOS technology with 0.0174µm 2 embedded DRAM and 15 levels of Cu metallization (92 citations)
  • FinFET device containing a composite spacer structure (22 citations)
  • Finfet having highly doped source and drain regions (19 citations)

In his most recent research, the most cited papers focused on:

  • Semiconductor
  • Electrical engineering
  • Integrated circuit

His main research concerns Electronic engineering, Optoelectronics, Semiconductor device, Doping and Semiconductor materials. His Electronic engineering research incorporates elements of Semiconductor, Dielectric, Composite number, Composite material and Nitride. His study in Optoelectronics is interdisciplinary in nature, drawing from both Diffraction, Transistor, MOSFET, Heterostructure-emitter bipolar transistor and Electrical engineering.

His Semiconductor device study integrates concerns from other disciplines, such as Reciprocal lattice, Epitaxy, Deformation, X-ray crystallography and Electron backscatter diffraction.

Best Publications

  • Field effect transistor with stressed channel and producing method thereof

    Doris Brews B;Zidambarao Dursedi

  • Densely patterned silicon-on-insulator (SOI) region on a wafer

    Effendi Leobandung;Devendra K. Sadana;Dominic J. Schepis;Ghavam G. Shahidi

  • High performance 14nm SOI FinFET CMOS technology with 0.0174µm 2 embedded DRAM and 15 levels of Cu metallization

    C-H. Lin;B. Greene;S. Narasimha;J. Cai

  • High Performance 45-nm SOI Technology with Enhanced Strain, Porous Low-k BEOL, and Immersion Lithography

    S. Narasimha;K. Onishi;H. M. Nayfeh;A. Waite

  • A manufacturable dual channel (Si and SiGe) high-k metal gate CMOS technology with multiple oxides for high performance and low power applications

    S. Krishnan;U. Kwon;N. Moumen;M.W. Stoker

  • Sige channel epitaxial development for high-k PFET manufacturability

    Michael P. Chudzik;Dominic J. Schepis;Linda Black

  • Partially-depleted SOI technology for digital logic

    G.G. Shahidi;A. Ajmera;F. Assaderaghi;R.J. Bolam

  • Semiconductor structure with multiple fins having different channel region heights and method of forming the semiconductor structure

    Dominic J. Schepis;Huilong Zhu

  • Integration and optimization of embedded-sige, compressive and tensile stressed liner films, and stress memorization in advanced SOI CMOS technologies

    M. Horstmann;A. Wei;T. Kammler;J. Hontschel

  • Planar and densely patterned silicon-on-insulator structure and process of fabricating

    Leobandung Effendi;Sadana Devendra K;Schepis Dominic J;Shahidi Ghavam

  • Doped intride film, doped oxide film and other dop

    Chakravarti Ashima B;Holt Judson;Chan Kevin K;Deshpande Sadanand

  • Total dielectric isolation for integrated circuits

    John S. Lechaton;Shashi D. Malaviya;Dominic J. Schepis;Gurumakonda R. Srinivasan

  • SOI wafers with 30-100 Å buried oxide (BOX) created by wafer bonding using 30-100 Å thin oxide as bonding layer

    Diane C. Boyd;Hussein I. Hanafi;Erin C. Jones;Dominic J. Schepis

  • Embedded silicon germanium using a double buried oxide silicon-on-insulator wafer

    Huajie Chen;Dureseti Chidambarrao;Dominic J. Schepis;Henry K. Utomo

  • A 7.9/5.5 psec room/low temperature SOI CMOS

    F. Assaderaghi;W. Rausch;A. Ajmera;E. Leobandung

  • Method and structure for front-side gettering of silicon-on-insulator substrates

    Dominic Joseph Schepis;Joseph Francis Shepard

  • High performance 65 nm SOI technology with enhanced transistor strain and advanced-low-K BEOL

    W.-H. Lee;A. Waite;H. Nii;H.M. Nayfeh

  • Method for forming substrate contact on soi wafer and semiconductor device

    Atul Ajmera;Effendi Leobandung;Werner Rausch;Dominic J Schepis

  • Antifuse element with electrical or optical programming

    Dominic Joseph Schepis;Kris Venkatraman Srikrishnan;Seshadri Subbanna;Manu Jamnadas Tejwani

  • A 0.25 /spl mu/m CMOS SOI technology and its application to 4 Mb SRAM

    D.J. Schepis;F. Assaderaghi;D.S. Yee;W. Rausch

Frequent Co-Authors

Ghavam G. Shahidi
Ghavam G. Shahidi IBM (United States)
Alexander Reznicek
Alexander Reznicek IBM (United States)
Devendra K. Sadana
Devendra K. Sadana IBM (United States)
Dureseti Chidambarrao
Dureseti Chidambarrao IBM (United States)
Kangguo Cheng
Kangguo Cheng IBM (United States)
Michael P. Chudzik
Michael P. Chudzik IBM (United States)
Ali Khakifirooz
Ali Khakifirooz Intel (United States)
Byoung Hun Lee
Byoung Hun Lee Pohang University of Science and Technology
Bruce B. Doris
Bruce B. Doris IBM (United States)

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