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Dominic J. Schepis

Dominic J. Schepis

D-Index & Metrics

Discipline name D-Index World Ranking Current World Ranking National Ranking Current National Ranking Publications Citations
Electronics and Electrical Engineering 32 6351 6099 2093 1950 126 4021

Dominic J. Schepis publications per year

The chart shows the history of publications by Dominic J. Schepis between 1982 and 2019, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. Dominic J. Schepis published across 38 years, from 1982 to 2019, averaging 3.4 papers a year. Output peaked at 15 publications in 2001. 3 of the 129 publications appeared in the last two years.

No. of publications
5 10 15
Bar chart. Horizontal axis: year, 1982 to 2019. Vertical axis: number of publications, 0 to 15. Peak 15 publications in 2001. 1982: 1 publication 1983: 1 publication 1984: 0 publications 1985: 0 publications 1986: 0 publications 1987: 0 publications 1988: 0 publications 1989: 1 publication 1990: 2 publications 1991: 1 publication 1992: 0 publications 1993: 2 publications 1994: 2 publications 1995: 4 publications 1996: 6 publications 1997: 4 publications 1998: 2 publications 1999: 4 publications 2000: 1 publication 2001: 15 publications 2002: 7 publications 2003: 6 publications 2004: 4 publications 2005: 4 publications 2006: 5 publications 2007: 7 publications 2008: 12 publications 2009: 3 publications 2010: 4 publications 2011: 4 publications 2012: 3 publications 2013: 5 publications 2014: 7 publications 2015: 8 publications 2016: 1 publication 2017: 0 publications 2018: 2 publications 2019: 1 publication
1982 2019

129 publications in total across all disciplines

View publications per year as a table
Dominic J. Schepis: publications per year, 1982 to 2019
Year Publications
1982 1
1983 1
1984 0
1985 0
1986 0
1987 0
1988 0
1989 1
1990 2
1991 1
1992 0
1993 2
1994 2
1995 4
1996 6
1997 4
1998 2
1999 4
2000 1
2001 15
2002 7
2003 6
2004 4
2005 4
2006 5
2007 7
2008 12
2009 3
2010 4
2011 4
2012 3
2013 5
2014 7
2015 8
2016 1
2017 0
2018 2
2019 1
Total 129
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Dominic J. Schepis publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Dominic J. Schepis sits on this spectrum.

No. of scientists
100 200 300 400
Bar chart with 53 bars. Horizontal axis: publications, 34–53 to 1,065+. Vertical axis: number of scientists, 0 to 445. Most scientists, 445, have 174–193 publications. The last bar groups every scientist with 1,065 publications or more. The highlighted bar, 114–133 publications, is where this scientist sits. 34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34–53 publications 1,065+

This scientist: 126 publications — 8th percentile

8% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

View publications distribution as a table
Number of Electronics and Electrical Engineering scientists by publication count, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
Publications Scientists This scientist
34–53 24
54–73 52
74–93 114
94–113 203
114–133 269 126
134–153 355
154–173 403
174–193 445
194–213 430
214–233 431
234–253 399
254–273 366
274–293 335
294–313 300
314–333 276
334–353 250
354–373 214
374–393 187
394–413 152
414–433 169
434–453 147
454–473 111
474–493 117
494–513 103
514–533 99
534–553 92
554–573 75
574–593 58
594–613 69
614–633 50
634–653 62
654–673 54
674–693 44
694–713 37
714–733 28
734–753 26
754–773 26
774–793 19
794–813 23
814–833 20
834–853 16
854–873 20
874–893 11
894–913 11
914–933 16
934–953 13
954–973 10
974–993 11
994–1,013 9
1,014–1,033 9
1,034–1,053 10
1,054–1,064 6
1,065+ 99
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Dominic J. Schepis D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Dominic J. Schepis sits on this spectrum.

No. of scientists
50 100 150 200 250
Bar chart with 82 bars. Horizontal axis: D-Index, 30 to 111+. Vertical axis: number of scientists, 0 to 263. Most scientists, 263, have 32 D-Index. The last bar groups every scientist with 111 D-Index or more. The highlighted bar, 32 D-Index, is where this scientist sits. 30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 32 D-Index — 10th percentile

10% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

View D-Index distribution as a table
Number of Electronics and Electrical Engineering scientists by D-index, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
D-Index Scientists This scientist
30 178
31 257
32 263 32
33 262
34 244
35 236
36 211
37 220
38 214
39 214
40 205
41 187
42 194
43 201
44 155
45 189
46 148
47 160
48 134
49 130
50 141
51 156
52 108
53 130
54 112
55 97
56 111
57 102
58 108
59 120
60 103
61 93
62 92
63 74
64 77
65 73
66 64
67 69
68 60
69 39
70 57
71 59
72 46
73 49
74 38
75 35
76 32
77 35
78 31
79 22
80 34
81 31
82 34
83 23
84 18
85 30
86 19
87 19
88 20
89 8
90 17
91 7
92 14
93 9
94 15
95 10
96 12
97 10
98 10
99 12
100 16
101 5
102 7
103 7
104 8
105 9
106 13
107 4
108 5
109 10
110 8
111+ 96
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Overview

What is he best known for?

The fields of study he is best known for:

  • Semiconductor
  • Electrical engineering
  • Integrated circuit

Dominic J. Schepis mainly focuses on Optoelectronics, Silicon on insulator, Electronic engineering, CMOS and Electrical engineering. His study in Optoelectronics is interdisciplinary in nature, drawing from both Layer, Nanotechnology and Field-effect transistor. His research in Layer intersects with topics in Monocrystalline silicon and Semiconductor.

His research integrates issues of Transistor and Stress in his study of Silicon on insulator. His work carried out in the field of Electronic engineering brings together such families of science as Schottky diode, Schottky barrier, Metal–semiconductor junction, Oxide and Silicide. His CMOS research incorporates elements of Dram and MOSFET.

His most cited work include:

  • Epitaxial growth of silicon doped with carbon and phosphorus using hydrogen carrier gas (139 citations)
  • Handbook of Thin Film Deposition (122 citations)
  • SOI based field effect transistor having a compressive film in undercut area under the channel and a method of making the device (110 citations)

What are the main themes of his work throughout his whole career to date?

Dominic J. Schepis mainly investigates Optoelectronics, Silicon on insulator, Electronic engineering, Layer and Silicon. In his study, Epitaxy is inextricably linked to Substrate, which falls within the broad field of Optoelectronics. His Silicon on insulator study which covers Semiconductor that intersects with Dielectric.

As a part of the same scientific family, Dominic J. Schepis mostly works in the field of Electronic engineering, focusing on Germanium and, on occasion, Aluminium. The Layer study combines topics in areas such as Monocrystalline silicon and Dopant. His research on Silicon often connects related areas such as Etching.

He most often published in these fields:

  • Optoelectronics (77.36%)
  • Silicon on insulator (40.88%)
  • Electronic engineering (36.48%)

What were the highlights of his more recent work (between 2012-2019)?

  • Optoelectronics (77.36%)
  • Electronic engineering (36.48%)
  • Semiconductor (13.84%)

In recent papers he was focusing on the following fields of study:

Dominic J. Schepis focuses on Optoelectronics, Electronic engineering, Semiconductor, Semiconductor device and Substrate. His Optoelectronics study integrates concerns from other disciplines, such as Layer, Epitaxy and Oxide. Dominic J. Schepis has included themes like Field-effect transistor and Silicon in his Oxide study.

Dominic J. Schepis works on Electronic engineering which deals in particular with CMOS. He combines subjects such as Silicon on insulator and Dielectric with his study of Semiconductor. The Silicon on insulator study combines topics in areas such as Trench and Insulator.

Between 2012 and 2019, his most popular works were:

  • High performance 14nm SOI FinFET CMOS technology with 0.0174µm 2 embedded DRAM and 15 levels of Cu metallization (92 citations)
  • FinFET device containing a composite spacer structure (22 citations)
  • Finfet having highly doped source and drain regions (19 citations)

In his most recent research, the most cited papers focused on:

  • Semiconductor
  • Electrical engineering
  • Integrated circuit

His main research concerns Electronic engineering, Optoelectronics, Semiconductor device, Doping and Semiconductor materials. His Electronic engineering research incorporates elements of Semiconductor, Dielectric, Composite number, Composite material and Nitride. His study in Optoelectronics is interdisciplinary in nature, drawing from both Diffraction, Transistor, MOSFET, Heterostructure-emitter bipolar transistor and Electrical engineering.

His Semiconductor device study integrates concerns from other disciplines, such as Reciprocal lattice, Epitaxy, Deformation, X-ray crystallography and Electron backscatter diffraction.

Best Publications

  • Field effect transistor with stressed channel and producing method thereof

    Doris Brews B;Zidambarao Dursedi

  • Densely patterned silicon-on-insulator (SOI) region on a wafer

    Effendi Leobandung;Devendra K. Sadana;Dominic J. Schepis;Ghavam G. Shahidi

  • High performance 14nm SOI FinFET CMOS technology with 0.0174µm 2 embedded DRAM and 15 levels of Cu metallization

    C-H. Lin;B. Greene;S. Narasimha;J. Cai

  • High Performance 45-nm SOI Technology with Enhanced Strain, Porous Low-k BEOL, and Immersion Lithography

    S. Narasimha;K. Onishi;H. M. Nayfeh;A. Waite

  • A manufacturable dual channel (Si and SiGe) high-k metal gate CMOS technology with multiple oxides for high performance and low power applications

    S. Krishnan;U. Kwon;N. Moumen;M.W. Stoker

  • Sige channel epitaxial development for high-k PFET manufacturability

    Michael P. Chudzik;Dominic J. Schepis;Linda Black

  • Partially-depleted SOI technology for digital logic

    G.G. Shahidi;A. Ajmera;F. Assaderaghi;R.J. Bolam

  • Semiconductor structure with multiple fins having different channel region heights and method of forming the semiconductor structure

    Dominic J. Schepis;Huilong Zhu

  • Integration and optimization of embedded-sige, compressive and tensile stressed liner films, and stress memorization in advanced SOI CMOS technologies

    M. Horstmann;A. Wei;T. Kammler;J. Hontschel

  • Planar and densely patterned silicon-on-insulator structure and process of fabricating

    Leobandung Effendi;Sadana Devendra K;Schepis Dominic J;Shahidi Ghavam

  • Doped intride film, doped oxide film and other dop

    Chakravarti Ashima B;Holt Judson;Chan Kevin K;Deshpande Sadanand

  • Total dielectric isolation for integrated circuits

    John S. Lechaton;Shashi D. Malaviya;Dominic J. Schepis;Gurumakonda R. Srinivasan

  • SOI wafers with 30-100 Å buried oxide (BOX) created by wafer bonding using 30-100 Å thin oxide as bonding layer

    Diane C. Boyd;Hussein I. Hanafi;Erin C. Jones;Dominic J. Schepis

  • Embedded silicon germanium using a double buried oxide silicon-on-insulator wafer

    Huajie Chen;Dureseti Chidambarrao;Dominic J. Schepis;Henry K. Utomo

  • A 7.9/5.5 psec room/low temperature SOI CMOS

    F. Assaderaghi;W. Rausch;A. Ajmera;E. Leobandung

  • Method and structure for front-side gettering of silicon-on-insulator substrates

    Dominic Joseph Schepis;Joseph Francis Shepard

  • High performance 65 nm SOI technology with enhanced transistor strain and advanced-low-K BEOL

    W.-H. Lee;A. Waite;H. Nii;H.M. Nayfeh

  • Method for forming substrate contact on soi wafer and semiconductor device

    Atul Ajmera;Effendi Leobandung;Werner Rausch;Dominic J Schepis

  • Antifuse element with electrical or optical programming

    Dominic Joseph Schepis;Kris Venkatraman Srikrishnan;Seshadri Subbanna;Manu Jamnadas Tejwani

  • A 0.25 /spl mu/m CMOS SOI technology and its application to 4 Mb SRAM

    D.J. Schepis;F. Assaderaghi;D.S. Yee;W. Rausch

Frequent Co-Authors

Ghavam G. Shahidi
Ghavam G. Shahidi IBM (United States)
Alexander Reznicek
Alexander Reznicek IBM (United States)
Devendra K. Sadana
Devendra K. Sadana IBM (United States)
Dureseti Chidambarrao
Dureseti Chidambarrao IBM (United States)
Kangguo Cheng
Kangguo Cheng IBM (United States)
Michael P. Chudzik
Michael P. Chudzik IBM (United States)
Ali Khakifirooz
Ali Khakifirooz Intel (United States)
Byoung Hun Lee
Byoung Hun Lee Pohang University of Science and Technology
Bruce B. Doris
Bruce B. Doris IBM (United States)

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