World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
53
Citations
7826
World Ranking
2466
National Ranking
951

William R. Tonti publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where William R. Tonti sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 225 publications — 38th percentile

38% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

William R. Tonti D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where William R. Tonti sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 53 D-Index — 66th percentile

66% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

What is he best known for?

The fields of study he is best known for:

  • Electrical engineering
  • Integrated circuit
  • Semiconductor

William R. Tonti focuses on Optoelectronics, Electrical engineering, Electronic engineering, Integrated circuit and Silicon on insulator. His research integrates issues of Substrate and Semiconductor device in his study of Optoelectronics. In most of his Electrical engineering studies, his work intersects topics such as Conductor.

His studies deal with areas such as Layer and Dielectric as well as Electronic engineering. His Integrated circuit study combines topics in areas such as Computer hardware, Composite material, Soldering and Chip. William R. Tonti focuses mostly in the field of Silicon on insulator, narrowing it down to matters related to Transistor and, in some cases, Common emitter.

His most cited work include:

  • Low-K gate spacers by fluorine implantation (171 citations)
  • Semiconductor structures integrating damascene-body FinFET's and planar devices on a common substrate and methods for forming such semiconductor structures (164 citations)
  • Electronic fuse with conformal fuse element formed over a freestanding dielectric spacer (151 citations)

What are the main themes of his work throughout his whole career to date?

The scientist’s investigation covers issues in Optoelectronics, Electrical engineering, Electronic engineering, Layer and Dielectric. His Optoelectronics study incorporates themes from Trench and Substrate. His Electrical engineering study combines topics in areas such as Capacitance and Conductor.

The study incorporates disciplines such as Wafer, Node, Electrical conductor, Signal and Reliability in addition to Electronic engineering. His work on Semiconductor device, Substrate and Gate oxide is typically connected to Oxide as part of general Layer study, connecting several disciplines of science. His research integrates issues of Air gap, Composite material and Conformal map in his study of Dielectric.

He most often published in these fields:

  • Optoelectronics (65.15%)
  • Electrical engineering (41.67%)
  • Electronic engineering (31.82%)

What were the highlights of his more recent work (between 2007-2020)?

  • Optoelectronics (65.15%)
  • Semiconductor (18.18%)
  • Electronic engineering (31.82%)

In recent papers he was focusing on the following fields of study:

Optoelectronics, Semiconductor, Electronic engineering, Layer and Gate oxide are his primary areas of study. His biological study spans a wide range of topics, including Field-effect transistor, Trench and Substrate. His Semiconductor study introduces a deeper knowledge of Electrical engineering.

In his study, which falls under the umbrella issue of Electrical engineering, Engineering physics is strongly linked to Structure. His Electronic engineering research is multidisciplinary, relying on both Fuse, Stress and Substrate. William R. Tonti has researched Layer in several fields, including Body region, Crystal and Dielectric.

Between 2007 and 2020, his most popular works were:

  • Device and design structures for memory cells in a non-volatile random access memory and methods of fabricating such device structures (45 citations)
  • Methods for fabricating semiconductor device structures with reduced susceptibility to latch-up and semiconductor device structures formed by the methods (38 citations)
  • Device structures for a metal-oxide-semiconductor field effect transistor and methods of fabricating such device structures (36 citations)

In his most recent research, the most cited papers focused on:

  • Electrical engineering
  • Integrated circuit
  • Semiconductor

His primary scientific interests are in Optoelectronics, Semiconductor, Electronic engineering, Electrical engineering and Silicon on insulator. A large part of his Optoelectronics studies is devoted to CMOS. His research in Semiconductor tackles topics such as Shallow trench isolation which are related to areas like Semiconductor device and Dielectric.

His work deals with themes such as Layer and Stress, which intersect with Electronic engineering. His Electrical engineering research includes themes of Structure and Composite material. William R. Tonti interconnects Field-effect transistor and Insulator in the investigation of issues within Silicon on insulator.

Best Publications

  • Low-K gate spacers by fluorine implantation

    Jeffrey P. Gambino;Jack Mandelman;William R. Tonti

  • Electronic fuse with conformal fuse element formed over a freestanding dielectric spacer

    Louis Lu-Chen Hsu;Jack A. Mandelman;William R. Tonti;Chih-Chao Yang

  • Through-chip conductors for low inductance chip-to-chip integration and off-chip connections

    Claude Louis Bertin;Wayne John Howell;William R. Tonti;Jerzy Maria Zalesinski

  • Chip interconnection structure using stub terminals

    Claude L. Bertin;William R. Tonti;Richard Q. Williams

  • SOI stacked DRAM logic

    Ramachandra Divakauni;Mark C. Hakey;William H-L. Ma;Jack A. Mandclman

  • SOI hybrid structure with selective epitaxial growth of silicon

    Toshiharu Furukawa;Jack A. Mandelman;Dan Moy;Byeongju Park

  • Rolling ball connector

    Joseph A. Benenati;Claude L. Bertin;William T. Chen;Thomas E. Dinan

  • Low voltage programmable storage element

    Wagdi William Abadeer;Badih El-Kareh;Wayne Frederick Ellis;Duane Elmer Galbi

  • Semiconductor structure and system for fabricating an integrated circuit chip

    Wagdi W. Abadeer;Jeffrey S. Brown;David M. Fried;Robert J. Gauthier

  • Shared body and diffusion contact structure and method for fabricating same

    Jack A. Mandelman;Rama Divakaruni;William R. Tonti

  • Device and design structures for memory cells in a non-volatile random access memory and methods of fabricating such device structures

    Wagdi W. Abadeer;Kiran V. Chatty;Robert J. Gauthier;Jed H. Rankin

  • Structures for wafer level test and burn-in

    John E. Barth;Claude L. Bertin;Jeffrey H. Dreibelbis;Wayne F. Ellis

  • Method and apparatus for interconnecting multiple circuit chips

    William R. Tonti;Richard Q. Williams

  • Method of making large value capacitor for SOI

    Fariborz Assaderaghi;Louis L. Hsu;Jack A. Mandelman;William R. Tonti

  • Structure Incorporating Latch-Up Resistant Semiconductor Device Structures on Hybrid Substrates

    Jack Allan Mandelman;William Robert Tonti

  • Managing Vt for reduced power using a status table

    Claude Louis Bertin;Alvar Antonio Dean;Kenneth Joseph Goodnow;Scott Whitney Gould

  • Integrated antifuse structure for FINFET and CMOS devices

    Jed H. Rankin;Wagdi W. Abadeer;Jeffrey S. Brown;William R. Tonti

  • Method of forming connection and anti-fuse in layered substrate such as SOI

    Claude L. Bertin;Ramachandra Divakaruni;Russell J. Houghton;Jack A. Mandelman

  • Method and structure to process thick and thin fins and variable fin to fin spacing

    Wagdi W. Abadeer;Jeffrey S. Brown;Kiran V. Chatty;Robert J. Gauthier

  • Reduced parasitic leakage in semiconductor devices

    Jack A. Mandelman;Louis L. C. Hsu;Johann Alsmeier;William R. Tonti

Frequent Co-Authors

Jack A. Mandelman
Jack A. Mandelman Independent Scientist / Consultant, US
Claude L. Bertin
Claude L. Bertin NANTERO INC
Louis L. Hsu
Louis L. Hsu IBM (United States)
Toshiharu Furukawa
Toshiharu Furukawa IBM (United States)
Carl J. Radens
Carl J. Radens IBM (United States)
Kangguo Cheng
Kangguo Cheng IBM (United States)
Charles W. Koburger
Charles W. Koburger IBM (United States)
Jeffrey P. Gambino
Jeffrey P. Gambino ON Semiconductor (United States)
Mark C. Hakey
Mark C. Hakey Semivation
Steven J. Holmes
Steven J. Holmes IBM (United States)

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