World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
53
Citations
7826
World Ranking
2466
National Ranking
950

Overview

What is he best known for?

The fields of study he is best known for:

  • Electrical engineering
  • Integrated circuit
  • Semiconductor

William R. Tonti focuses on Optoelectronics, Electrical engineering, Electronic engineering, Integrated circuit and Silicon on insulator. His research integrates issues of Substrate and Semiconductor device in his study of Optoelectronics. In most of his Electrical engineering studies, his work intersects topics such as Conductor.

His studies deal with areas such as Layer and Dielectric as well as Electronic engineering. His Integrated circuit study combines topics in areas such as Computer hardware, Composite material, Soldering and Chip. William R. Tonti focuses mostly in the field of Silicon on insulator, narrowing it down to matters related to Transistor and, in some cases, Common emitter.

His most cited work include:

  • Low-K gate spacers by fluorine implantation (171 citations)
  • Semiconductor structures integrating damascene-body FinFET's and planar devices on a common substrate and methods for forming such semiconductor structures (164 citations)
  • Electronic fuse with conformal fuse element formed over a freestanding dielectric spacer (151 citations)

What are the main themes of his work throughout his whole career to date?

The scientist’s investigation covers issues in Optoelectronics, Electrical engineering, Electronic engineering, Layer and Dielectric. His Optoelectronics study incorporates themes from Trench and Substrate. His Electrical engineering study combines topics in areas such as Capacitance and Conductor.

The study incorporates disciplines such as Wafer, Node, Electrical conductor, Signal and Reliability in addition to Electronic engineering. His work on Semiconductor device, Substrate and Gate oxide is typically connected to Oxide as part of general Layer study, connecting several disciplines of science. His research integrates issues of Air gap, Composite material and Conformal map in his study of Dielectric.

He most often published in these fields:

  • Optoelectronics (65.15%)
  • Electrical engineering (41.67%)
  • Electronic engineering (31.82%)

What were the highlights of his more recent work (between 2007-2020)?

  • Optoelectronics (65.15%)
  • Semiconductor (18.18%)
  • Electronic engineering (31.82%)

In recent papers he was focusing on the following fields of study:

Optoelectronics, Semiconductor, Electronic engineering, Layer and Gate oxide are his primary areas of study. His biological study spans a wide range of topics, including Field-effect transistor, Trench and Substrate. His Semiconductor study introduces a deeper knowledge of Electrical engineering.

In his study, which falls under the umbrella issue of Electrical engineering, Engineering physics is strongly linked to Structure. His Electronic engineering research is multidisciplinary, relying on both Fuse, Stress and Substrate. William R. Tonti has researched Layer in several fields, including Body region, Crystal and Dielectric.

Between 2007 and 2020, his most popular works were:

  • Device and design structures for memory cells in a non-volatile random access memory and methods of fabricating such device structures (45 citations)
  • Methods for fabricating semiconductor device structures with reduced susceptibility to latch-up and semiconductor device structures formed by the methods (38 citations)
  • Device structures for a metal-oxide-semiconductor field effect transistor and methods of fabricating such device structures (36 citations)

In his most recent research, the most cited papers focused on:

  • Electrical engineering
  • Integrated circuit
  • Semiconductor

His primary scientific interests are in Optoelectronics, Semiconductor, Electronic engineering, Electrical engineering and Silicon on insulator. A large part of his Optoelectronics studies is devoted to CMOS. His research in Semiconductor tackles topics such as Shallow trench isolation which are related to areas like Semiconductor device and Dielectric.

His work deals with themes such as Layer and Stress, which intersect with Electronic engineering. His Electrical engineering research includes themes of Structure and Composite material. William R. Tonti interconnects Field-effect transistor and Insulator in the investigation of issues within Silicon on insulator.

Best Publications

  • Low-K gate spacers by fluorine implantation

    Jeffrey P. Gambino;Jack Mandelman;William R. Tonti

  • Electronic fuse with conformal fuse element formed over a freestanding dielectric spacer

    Louis Lu-Chen Hsu;Jack A. Mandelman;William R. Tonti;Chih-Chao Yang

  • Through-chip conductors for low inductance chip-to-chip integration and off-chip connections

    Claude Louis Bertin;Wayne John Howell;William R. Tonti;Jerzy Maria Zalesinski

  • Chip interconnection structure using stub terminals

    Claude L. Bertin;William R. Tonti;Richard Q. Williams

  • SOI stacked DRAM logic

    Ramachandra Divakauni;Mark C. Hakey;William H-L. Ma;Jack A. Mandclman

  • SOI hybrid structure with selective epitaxial growth of silicon

    Toshiharu Furukawa;Jack A. Mandelman;Dan Moy;Byeongju Park

  • Rolling ball connector

    Joseph A. Benenati;Claude L. Bertin;William T. Chen;Thomas E. Dinan

  • Low voltage programmable storage element

    Wagdi William Abadeer;Badih El-Kareh;Wayne Frederick Ellis;Duane Elmer Galbi

  • Semiconductor structure and system for fabricating an integrated circuit chip

    Wagdi W. Abadeer;Jeffrey S. Brown;David M. Fried;Robert J. Gauthier

  • Shared body and diffusion contact structure and method for fabricating same

    Jack A. Mandelman;Rama Divakaruni;William R. Tonti

  • Device and design structures for memory cells in a non-volatile random access memory and methods of fabricating such device structures

    Wagdi W. Abadeer;Kiran V. Chatty;Robert J. Gauthier;Jed H. Rankin

  • Structures for wafer level test and burn-in

    John E. Barth;Claude L. Bertin;Jeffrey H. Dreibelbis;Wayne F. Ellis

  • Method and apparatus for interconnecting multiple circuit chips

    William R. Tonti;Richard Q. Williams

  • Method of making large value capacitor for SOI

    Fariborz Assaderaghi;Louis L. Hsu;Jack A. Mandelman;William R. Tonti

  • Structure Incorporating Latch-Up Resistant Semiconductor Device Structures on Hybrid Substrates

    Jack Allan Mandelman;William Robert Tonti

  • Managing Vt for reduced power using a status table

    Claude Louis Bertin;Alvar Antonio Dean;Kenneth Joseph Goodnow;Scott Whitney Gould

  • Integrated antifuse structure for FINFET and CMOS devices

    Jed H. Rankin;Wagdi W. Abadeer;Jeffrey S. Brown;William R. Tonti

  • Method of forming connection and anti-fuse in layered substrate such as SOI

    Claude L. Bertin;Ramachandra Divakaruni;Russell J. Houghton;Jack A. Mandelman

  • Method and structure to process thick and thin fins and variable fin to fin spacing

    Wagdi W. Abadeer;Jeffrey S. Brown;Kiran V. Chatty;Robert J. Gauthier

  • Reduced parasitic leakage in semiconductor devices

    Jack A. Mandelman;Louis L. C. Hsu;Johann Alsmeier;William R. Tonti

Frequent Co-Authors

Jack A. Mandelman
Jack A. Mandelman Independent Scientist / Consultant, US
Claude L. Bertin
Claude L. Bertin NANTERO INC
Louis L. Hsu
Louis L. Hsu IBM (United States)
Toshiharu Furukawa
Toshiharu Furukawa IBM (United States)
Carl J. Radens
Carl J. Radens IBM (United States)
Kangguo Cheng
Kangguo Cheng IBM (United States)
Charles W. Koburger
Charles W. Koburger IBM (United States)
Jeffrey P. Gambino
Jeffrey P. Gambino ON Semiconductor (United States)
Mark C. Hakey
Mark C. Hakey Semivation
Steven J. Holmes
Steven J. Holmes IBM (United States)

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