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Toshiharu Furukawa

Toshiharu Furukawa

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
44
Citations
6407
World Ranking
3774
National Ranking
1360

Toshiharu Furukawa publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Toshiharu Furukawa sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 199 publications — 29th percentile

29% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Toshiharu Furukawa D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Toshiharu Furukawa sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 44 D-Index — 47th percentile

47% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Toshiharu Furukawa is affiliated with IBM in the United States. Their professional profile indicates a role connected with this major technology corporation, suggesting involvement in research or development activities within such an environment.

Although detailed records of papers, publication venues, co-authors, or specific research topics are not present, the affiliation with IBM implies engagement in applied and possibly interdisciplinary scientific or technological research. The absence of listed publications or co-authors precludes analysis of collaborative networks or detailed areas of subject expertise based on bibliometric data.

There is no available information about awards, recognized contributions, or specific fields and subfields of study related to Toshiharu Furukawa. Similarly, no book publications or frequent publication venues are documented, indicating either a focus on internal corporate research or work that has not been widely disseminated through traditional academic channels.

The absence of information on main topics or specialized fields of study means it is not possible to specify research themes or scientific domains that Toshiharu Furukawa concentrates on. Without such data, any attempt to categorize the scientist's expertise or influence must remain general and cautious, limited to the context of affiliation with a leading technology company.

There is no indication that Toshiharu Furukawa is deceased. The profile is based on currently available data and reflects an active or recent professional status.

Best Publications

  • Effect of Al inclusion in HfO 2 on the physical and electrical properties of the dielectrics

    W.J. Zhu;T. Tamagawa;M. Gibson;T. Furukawa

  • Forming capping layer over metal wire structure using selective atomic layer deposition

    Toshiharu Furukawa;Steven J. Holmes;David V. Horak;Charles W. Koburger

  • Novel structure for folded architecture pillar memory cell

    Furukawa Toshiharu;Hakey Mark C;Holmes Steven J;Horak David

  • SOI hybrid structure with selective epitaxial growth of silicon

    Toshiharu Furukawa;Jack A. Mandelman;Dan Moy;Byeongju Park

  • HfO/sub 2/ and HfAlO for CMOS: thermal stability and current transport

    W. Zhu;T.P. Ma;T. Tamagawa;Y. Di

  • A variable-size shallow trench isolation (STL) technology with diffused sidewall doping for submicron CMOS

    B. Davari;C. Koburger;T. Furukawa;Y. Taur

  • Trench storage dynamic random access memory cell with vertical transfer device

    Toshiharu Furukawa;Mark C. Hakey;David V. Horak;William H. Ma

  • Method for forming quadruple density sidewall image transfer (SIT) structures

    Toshiharu Furukawa;Mark Charles Hakey;Steven John Holmes;David Vaclav Horak

  • High performance low power bulk fet device and method of manufacture

    Jin Cai;Toshiharu Furukawa;Robert R. Robison

  • A new planarization technique, using a combination of RIE and chemical mechanical polish (CMP)

    B. Davarik;C.W. Koburger;R. Schulz;J.D. Warnock

  • Methods of T-gate fabrication using a hybrid resist

    Toshiharu Furukawa;Mark C. Hakey;Steven J. Holmes;David V. Horak

  • Layout and process to contact sub-lithographic structures

    Toshiharu Furukawa;Mark Charles Hakey;Steven J. Holmes;David V. Horak

  • Method for forming pillar memory cells and device formed thereby

    Toshiharu Furukawa;Mark C. Hakey;Steven J. Holmes;David V. Horak

  • Method and equipment for cleaning semiconductor substrate in immersion lithography system

    V Hollack David;Toshiharu Furukawa;Steven J Holmes;C Heiky Mark

  • High resolution dopant/impurity incorporation in semiconductors via a scanned atomic force probe

    Toshiharu Furukawa;John Joseph Ellis-Monaghan;James Albert Slinkman

  • Semiconductor with nanoscale features

    Steven J. Holmes;Charles Black;David J. Frank;Toshiharu Furukawa

  • Method for forming a uniform distribution of nitrogen in silicon oxynitride gate dielectric

    Anthony I. Chou;Michael P. Chudzik;Toshiharu Furukawa;Oleg Gluschenkov

  • Method of independent P and N gate length control of FET device made by sidewall image transfer technique

    Toshiharu Furukawa;Steven J. Holmes;William H-L Ma

  • RESIST IMAGE REVERSAL PROCESS AND INTEGRATED CIRCUIT CHIP THEREOF

    Void Dian C;Furukawa Tosiharu;Homes Steven J;Ma William H

  • Method of manufacturing an integrated ULSI heatsink

    William R. Tonti;Jack A. Mandelman;Jerzy M. Zalesinski;Toshiharu Furukawa

Frequent Co-Authors

Mark C. Hakey
Mark C. Hakey Semivation
Steven J. Holmes
Steven J. Holmes IBM (United States)
David V. Horak
David V. Horak IBM (United States)
Charles W. Koburger
Charles W. Koburger IBM (United States)
Jack A. Mandelman
Jack A. Mandelman Independent Scientist / Consultant, US
William R. Tonti
William R. Tonti Institute of Electrical and Electronics Engineers
Kangguo Cheng
Kangguo Cheng IBM (United States)
Carl J. Radens
Carl J. Radens IBM (United States)
Bruce B. Doris
Bruce B. Doris IBM (United States)
Charles T. Black
Charles T. Black Brookhaven National Laboratory

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Related Online Degrees & Career Pathways

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Career-wise, electronics and electrical engineering often appeal to individuals who thrive in focused, independent work environments. Many find success in introvert jobs that pay well, where deep technical expertise and problem-solving skills are highly valued.

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