D-Index & Metrics Best Publications

D-Index & Metrics D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines.

Discipline name D-index D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines. Citations Publications World Ranking National Ranking
Electronics and Electrical Engineering D-index 40 Citations 5,369 195 World Ranking 2832 National Ranking 1119

Overview

What is he best known for?

The fields of study he is best known for:

  • Semiconductor
  • Integrated circuit
  • Layer

Toshiharu Furukawa focuses on Optoelectronics, Layer, Electrical engineering, Nanotechnology and Semiconductor device. His research integrates issues of Substrate, Electronic engineering and Conductor in his study of Optoelectronics. His studies in Layer integrate themes in fields like Electrical conductor and Dopant.

His work is dedicated to discovering how Electrical engineering, Trench are connected with Square and other disciplines. The Carbon nanofiber and Carbon nanotube supported catalyst research Toshiharu Furukawa does as part of his general Nanotechnology study is frequently linked to other disciplines of science, such as Carbon nanobud, Selective chemistry of single-walled nanotubes and Substrate, therefore creating a link between diverse domains of science. Toshiharu Furukawa combines subjects such as Threshold voltage, Structural engineering, Dram and Field-effect transistor with his study of Semiconductor device.

His most cited work include:

  • Forming capping layer over metal wire structure using selective atomic layer deposition (154 citations)
  • Methods for forming uniform lithographic features (130 citations)
  • SOI hybrid structure with selective epitaxial growth of silicon (117 citations)

What are the main themes of his work throughout his whole career to date?

His primary areas of investigation include Optoelectronics, Layer, Electrical engineering, Semiconductor and Electronic engineering. Toshiharu Furukawa studies Optoelectronics, focusing on Doping in particular. His Layer study frequently links to related topics such as Electrical conductor.

Toshiharu Furukawa interconnects Capacitance and Shallow trench isolation in the investigation of issues within Electrical engineering. His work in Substrate covers topics such as Resist which are related to areas like Optics and Lithography. The Substrate study combines topics in areas such as Trench, Semiconductor device and Dielectric.

He most often published in these fields:

  • Optoelectronics (66.93%)
  • Layer (33.85%)
  • Electrical engineering (21.01%)

What were the highlights of his more recent work (between 2007-2020)?

  • Optoelectronics (66.93%)
  • Layer (33.85%)
  • Semiconductor (19.46%)

In recent papers he was focusing on the following fields of study:

Toshiharu Furukawa mostly deals with Optoelectronics, Layer, Semiconductor, Electronic engineering and Electrical engineering. His research in Optoelectronics intersects with topics in Field-effect transistor and Substrate. Layer is a subfield of Nanotechnology that Toshiharu Furukawa studies.

His Semiconductor research includes themes of Image sensor, Charge carrier, Trench, Shallow trench isolation and Insulator. His Electronic engineering study also includes fields such as

  • Conductor which connect with Integrated circuit, Nitriding and Resist,
  • Substrate which connect with Photoresist. His work deals with themes such as Fin and Capacitance, which intersect with Electrical engineering.

Between 2007 and 2020, his most popular works were:

  • Layout and process to contact sub-lithographic structures (86 citations)
  • High performance low power bulk fet device and method of manufacture (71 citations)
  • Method of forming a planar field effect transistor with embedded and faceted source/drain stressors on a silicon-on-insulator (SOI) wafer, a planar field effect transistor structure and a design structure for the planar field effect transistor (57 citations)

In his most recent research, the most cited papers focused on:

  • Semiconductor
  • Electrical engineering
  • Integrated circuit

His scientific interests lie mostly in Optoelectronics, Electrical engineering, Doping, Layer and CMOS. The various areas that Toshiharu Furukawa examines in his Optoelectronics study include Field-effect transistor, Substrate and Conductor. His Electrical engineering research focuses on Fin and how it relates to Mandrel, Chemical vapor deposition, Microelectronics and Integrated circuit.

His Doping study integrates concerns from other disciplines, such as Composite material, Semiconductor device and Silicon. His Layer study introduces a deeper knowledge of Nanotechnology. His research integrates issues of Trench and Substrate in his study of Semiconductor.

This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.

Best Publications

Forming capping layer over metal wire structure using selective atomic layer deposition

Toshiharu Furukawa;Steven J. Holmes;David V. Horak;Charles W. Koburger.
(2005)

246 Citations

Novel structure for folded architecture pillar memory cell

Furukawa Toshiharu;Hakey Mark C;Holmes Steven J;Horak David.
(2000)

234 Citations

Methods for forming uniform lithographic features

Toshiharu Furukawa;Mark Charles Hakey;Steven J. Holmes;David V. Horak.
(2006)

199 Citations

SOI hybrid structure with selective epitaxial growth of silicon

Toshiharu Furukawa;Jack A. Mandelman;Dan Moy;Byeongju Park.
(2002)

181 Citations

A variable-size shallow trench isolation (STL) technology with diffused sidewall doping for submicron CMOS

B. Davari;C. Koburger;T. Furukawa;Y. Taur.
international electron devices meeting (1988)

159 Citations

Trench storage dynamic random access memory cell with vertical transfer device

Toshiharu Furukawa;Mark C. Hakey;David V. Horak;William H. Ma.
(1998)

159 Citations

Method for forming quadruple density sidewall image transfer (SIT) structures

Toshiharu Furukawa;Mark Charles Hakey;Steven John Holmes;David Vaclav Horak.
(2004)

153 Citations

High performance low power bulk fet device and method of manufacture

Jin Cai;Toshiharu Furukawa;Robert R. Robison.
(2010)

131 Citations

Methods of T-gate fabrication using a hybrid resist

Toshiharu Furukawa;Mark C. Hakey;Steven J. Holmes;David V. Horak.
(1999)

128 Citations

Layout and process to contact sub-lithographic structures

Toshiharu Furukawa;Mark Charles Hakey;Steven J. Holmes;David V. Horak.
(2008)

127 Citations

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