Toshiharu Furukawa focuses on Optoelectronics, Layer, Electrical engineering, Nanotechnology and Semiconductor device. His research integrates issues of Substrate, Electronic engineering and Conductor in his study of Optoelectronics. His studies in Layer integrate themes in fields like Electrical conductor and Dopant.
His work is dedicated to discovering how Electrical engineering, Trench are connected with Square and other disciplines. The Carbon nanofiber and Carbon nanotube supported catalyst research Toshiharu Furukawa does as part of his general Nanotechnology study is frequently linked to other disciplines of science, such as Carbon nanobud, Selective chemistry of single-walled nanotubes and Substrate, therefore creating a link between diverse domains of science. Toshiharu Furukawa combines subjects such as Threshold voltage, Structural engineering, Dram and Field-effect transistor with his study of Semiconductor device.
His primary areas of investigation include Optoelectronics, Layer, Electrical engineering, Semiconductor and Electronic engineering. Toshiharu Furukawa studies Optoelectronics, focusing on Doping in particular. His Layer study frequently links to related topics such as Electrical conductor.
Toshiharu Furukawa interconnects Capacitance and Shallow trench isolation in the investigation of issues within Electrical engineering. His work in Substrate covers topics such as Resist which are related to areas like Optics and Lithography. The Substrate study combines topics in areas such as Trench, Semiconductor device and Dielectric.
Toshiharu Furukawa mostly deals with Optoelectronics, Layer, Semiconductor, Electronic engineering and Electrical engineering. His research in Optoelectronics intersects with topics in Field-effect transistor and Substrate. Layer is a subfield of Nanotechnology that Toshiharu Furukawa studies.
His Semiconductor research includes themes of Image sensor, Charge carrier, Trench, Shallow trench isolation and Insulator. His Electronic engineering study also includes fields such as
His scientific interests lie mostly in Optoelectronics, Electrical engineering, Doping, Layer and CMOS. The various areas that Toshiharu Furukawa examines in his Optoelectronics study include Field-effect transistor, Substrate and Conductor. His Electrical engineering research focuses on Fin and how it relates to Mandrel, Chemical vapor deposition, Microelectronics and Integrated circuit.
His Doping study integrates concerns from other disciplines, such as Composite material, Semiconductor device and Silicon. His Layer study introduces a deeper knowledge of Nanotechnology. His research integrates issues of Trench and Substrate in his study of Semiconductor.
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Forming capping layer over metal wire structure using selective atomic layer deposition
Toshiharu Furukawa;Steven J. Holmes;David V. Horak;Charles W. Koburger.
(2005)
Novel structure for folded architecture pillar memory cell
Furukawa Toshiharu;Hakey Mark C;Holmes Steven J;Horak David.
(2000)
Methods for forming uniform lithographic features
Toshiharu Furukawa;Mark Charles Hakey;Steven J. Holmes;David V. Horak.
(2006)
SOI hybrid structure with selective epitaxial growth of silicon
Toshiharu Furukawa;Jack A. Mandelman;Dan Moy;Byeongju Park.
(2002)
A variable-size shallow trench isolation (STL) technology with diffused sidewall doping for submicron CMOS
B. Davari;C. Koburger;T. Furukawa;Y. Taur.
international electron devices meeting (1988)
Trench storage dynamic random access memory cell with vertical transfer device
Toshiharu Furukawa;Mark C. Hakey;David V. Horak;William H. Ma.
(1998)
Method for forming quadruple density sidewall image transfer (SIT) structures
Toshiharu Furukawa;Mark Charles Hakey;Steven John Holmes;David Vaclav Horak.
(2004)
High performance low power bulk fet device and method of manufacture
Jin Cai;Toshiharu Furukawa;Robert R. Robison.
(2010)
Methods of T-gate fabrication using a hybrid resist
Toshiharu Furukawa;Mark C. Hakey;Steven J. Holmes;David V. Horak.
(1999)
Layout and process to contact sub-lithographic structures
Toshiharu Furukawa;Mark Charles Hakey;Steven J. Holmes;David V. Horak.
(2008)
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