World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
42
Citations
7015
World Ranking
4124
National Ranking
1477

David V. Horak publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where David V. Horak sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 225 publications — 38th percentile

38% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

David V. Horak D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where David V. Horak sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 42 D-Index — 42nd percentile

42% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

David V. Horak is affiliated with IBM in the United States. Their professional background aligns with the technology and research sectors, primarily through this affiliation.

Information on recent papers authored by David V. Horak is not available, and there are no noted co-authors or frequent publication venues connected with their research activities. Likewise, there is no data on book publications or awards received.

Details about their main and subfields of study, as well as main topics of work, are not provided. As such, specific research areas and scientific interests remain unspecified in the available data.

Best Publications

  • Forming capping layer over metal wire structure using selective atomic layer deposition

    Toshiharu Furukawa;Steven J. Holmes;David V. Horak;Charles W. Koburger

  • Novel structure for folded architecture pillar memory cell

    Furukawa Toshiharu;Hakey Mark C;Holmes Steven J;Horak David

  • Gate linewidth tailoring and critical dimension control for sub-100 nm devices using plasma etching

    Jeffrey J. Brown;Sadanand Vinayak Deshpande;David V. Horak;Maheswaran Surendra

  • MOVEMENT OF LENS FOR IMMERSION OPTICAL LITHOGRAPHY

    Hakey Mark Charles;Horak David;Koburger Charles W;Mitchell Peter H

  • Microelectronic structure including air gap

    Daniel C. Edelstein;David V. Horak;Elbert E. Huang;Satyanarayana V. Nitta

  • Liquid-filled balloons for immersion lithography

    Mark C. Hakey;David V. Horak;Charles W. Koburger;Peter H. Mitchell

  • Extremely thin SOI (ETSOI) CMOS with record low variability for low power system-on-chip applications

    K. Cheng;A. Khakifirooz;P. Kulkarni;S. Ponoth

  • System and apparatus for photolithography

    Mark Charles Hakey;David Vaclay Horak;Charles William Koburger;Peter H. Mitchell

  • Sidewall image transfer process employing a cap material layer for a metal nitride layer

    John C. Arnold;Sean D. Burns;Matthew E. Colburn;David V. Horak

  • Trench storage dynamic random access memory cell with vertical transfer device

    Toshiharu Furukawa;Mark C. Hakey;David V. Horak;William H. Ma

  • Methods of T-gate fabrication using a hybrid resist

    Toshiharu Furukawa;Mark C. Hakey;Steven J. Holmes;David V. Horak

  • Layout and process to contact sub-lithographic structures

    Toshiharu Furukawa;Mark Charles Hakey;Steven J. Holmes;David V. Horak

  • Simultaneous conditioning of a plurality of memory cells through series resistors

    Toshijaru Furukawa;Mark C. Hakey;Steven J. Holmes;David V. Horak

  • Method of making integrated circuit (IC) including at least one storage cell

    David V. Horak;Chung H. Lam;Hon-Sum P. Wong

  • Method for forming pillar memory cells and device formed thereby

    Toshiharu Furukawa;Mark C. Hakey;Steven J. Holmes;David V. Horak

  • Method and equipment for cleaning semiconductor substrate in immersion lithography system

    V Hollack David;Toshiharu Furukawa;Steven J Holmes;C Heiky Mark

  • Semiconductor with nanoscale features

    Steven J. Holmes;Charles Black;David J. Frank;Toshiharu Furukawa

  • RESIST IMAGE REVERSAL PROCESS AND INTEGRATED CIRCUIT CHIP THEREOF

    Void Dian C;Furukawa Tosiharu;Homes Steven J;Ma William H

  • Sealed air gap for semiconductor chip

    David V. Horak;Elbert E. Huang;Charles W. Koburger;Douglas C. La Tulipe

  • 22 nm technology compatible fully functional 0.1 μm 2 6T-SRAM cell

    B.S. Haran;A. Kumar;L. Adam;J. Chang

Frequent Co-Authors

Steven J. Holmes
Steven J. Holmes IBM (United States)
Mark C. Hakey
Mark C. Hakey Semivation
Toshiharu Furukawa
Toshiharu Furukawa IBM (United States)
Charles W. Koburger
Charles W. Koburger IBM (United States)
Jack A. Mandelman
Jack A. Mandelman Independent Scientist / Consultant, US
Edmund J. Sprogis
Edmund J. Sprogis IBM (United States)
Carl J. Radens
Carl J. Radens IBM (United States)
Bruce B. Doris
Bruce B. Doris IBM (United States)
Steven H. Voldman
Steven H. Voldman Independent Scientist / Consultant, US
Matthew E. Colburn
Matthew E. Colburn Facebook (United States)

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Related Online Degrees & Career Pathways

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