Nitin K. Ingle

What is he best known for?

The fields of study he is best known for:

• Organic chemistry
• Oxygen
• Hydrogen

Nitin K. Ingle mainly focuses on Silicon oxide, Silicon, Substrate, Remote plasma and Etching. His Silicon oxide study combines topics in areas such as Optoelectronics, Silicon nitride and Trench. His Silicon study incorporates themes from Chemical vapor deposition, Dielectric, Environmental chemistry, Carbon and Dry etching.

Layer and Composite material are inextricably linked to his Substrate research. Nitin K. Ingle combines subjects such as Selectivity, Titanium nitride, Plasma etching and Nitrogen with his study of Remote plasma. His Etching research is multidisciplinary, incorporating elements of Oxide and Fluorine.

His most cited work include:

• Chemical vapor deposition of high quality flow-like silicon dioxide using a silicon containing precursor and atomic oxygen (371 citations)
• Gas distribution showerhead (243 citations)
• Doping of dielectric layers (241 citations)

What are the main themes of his work throughout his whole career to date?

His primary scientific interests are in Substrate, Silicon oxide, Etching, Remote plasma and Silicon. His Substrate research focuses on Chemical vapor deposition and how it relates to Polysilazane. His Silicon oxide research integrates issues from Oxide, Inorganic chemistry, Etch pit density, Annealing and Oxide thin-film transistor.

The study incorporates disciplines such as Optoelectronics and Silicon nitride in addition to Etching. His Remote plasma research includes elements of Substrate, Titanium nitride, Semiconductor, Analytical chemistry and Selectivity. His research integrates issues of Environmental chemistry, Dielectric and Nitrogen in his study of Silicon.

He most often published in these fields:

• Substrate (40.59%)
• Silicon oxide (38.82%)
• Etching (38.24%)

What were the highlights of his more recent work (between 2015-2020)?

• Etching (38.24%)
• Semiconductor (11.18%)
• Optoelectronics (29.41%)

In recent papers he was focusing on the following fields of study:

Nitin K. Ingle mostly deals with Etching, Semiconductor, Optoelectronics, Substrate and Remote plasma. His study in Etching is interdisciplinary in nature, drawing from both Inorganic chemistry, Silicon and Material removal. His Semiconductor research incorporates themes from Gas plasma and Trench.

His studies in Optoelectronics integrate themes in fields like Layer, Substrate and Silicon oxide. His Silicon oxide research is multidisciplinary, relying on both Silicon nitride and Line. His studies deal with areas such as Stacking and Adapter as well as Remote plasma.

Between 2015 and 2020, his most popular works were:

• High aspect ratio 3-d flash memory device (56 citations)
• Saving ion-damaged spacers (55 citations)
• SiN spacer profile patterning (52 citations)

In his most recent research, the most cited papers focused on:

• Organic chemistry
• Oxygen
• Semiconductor

The scientist’s investigation covers issues in Semiconductor, Remote plasma, Etching, Optoelectronics and Substrate. His work carried out in the field of Semiconductor brings together such families of science as Inert and Trench. His work deals with themes such as Inorganic chemistry and Silicon, which intersect with Etching.

Nitin K. Ingle combines topics linked to Silicon oxide with his work on Optoelectronics. He carries out multidisciplinary research, doing studies in Silicon oxide and NAND gate. He has researched Silicon nitride in several fields, including Titanium nitride and Tungsten.