Nitin K. Ingle mainly focuses on Silicon oxide, Silicon, Substrate, Remote plasma and Etching. His Silicon oxide study combines topics in areas such as Optoelectronics, Silicon nitride and Trench. His Silicon study incorporates themes from Chemical vapor deposition, Dielectric, Environmental chemistry, Carbon and Dry etching.
Layer and Composite material are inextricably linked to his Substrate research. Nitin K. Ingle combines subjects such as Selectivity, Titanium nitride, Plasma etching and Nitrogen with his study of Remote plasma. His Etching research is multidisciplinary, incorporating elements of Oxide and Fluorine.
His primary scientific interests are in Substrate, Silicon oxide, Etching, Remote plasma and Silicon. His Substrate research focuses on Chemical vapor deposition and how it relates to Polysilazane. His Silicon oxide research integrates issues from Oxide, Inorganic chemistry, Etch pit density, Annealing and Oxide thin-film transistor.
The study incorporates disciplines such as Optoelectronics and Silicon nitride in addition to Etching. His Remote plasma research includes elements of Substrate, Titanium nitride, Semiconductor, Analytical chemistry and Selectivity. His research integrates issues of Environmental chemistry, Dielectric and Nitrogen in his study of Silicon.
Nitin K. Ingle mostly deals with Etching, Semiconductor, Optoelectronics, Substrate and Remote plasma. His study in Etching is interdisciplinary in nature, drawing from both Inorganic chemistry, Silicon and Material removal. His Semiconductor research incorporates themes from Gas plasma and Trench.
His studies in Optoelectronics integrate themes in fields like Layer, Substrate and Silicon oxide. His Silicon oxide research is multidisciplinary, relying on both Silicon nitride and Line. His studies deal with areas such as Stacking and Adapter as well as Remote plasma.
The scientist’s investigation covers issues in Semiconductor, Remote plasma, Etching, Optoelectronics and Substrate. His work carried out in the field of Semiconductor brings together such families of science as Inert and Trench. His work deals with themes such as Inorganic chemistry and Silicon, which intersect with Etching.
Nitin K. Ingle combines topics linked to Silicon oxide with his work on Optoelectronics. He carries out multidisciplinary research, doing studies in Silicon oxide and NAND gate. He has researched Silicon nitride in several fields, including Titanium nitride and Tungsten.
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Chemical vapor deposition of high quality flow-like silicon dioxide using a silicon containing precursor and atomic oxygen
Nitin K. Ingle;Zheng Yuan;Paul Gee;Kedar Sapre.
Doping of dielectric layers
Brian S. Underwood;Nitin K. Ingle;Abhijit Basu Mallick.
Gas distribution showerhead
Karthik Janakiraman;Nitin K. Ingle;Zheng Yuan;Steven E. Gianoulakis.
Apparatus and Methods for Cyclical Oxidation and Etching
Udayan Ganguly;Joseph M. Ranish;Aaron M. Hunter;Jing Tang.
Gap-fill depositions introducing hydroxyl-containing precursors in the formation of silicon containing dielectric materials
Nitin K. Ingle;Shan Wong;Xinyun Xia;Vikash Banthia.
Methods of thin film process
Nitin K. Ingle;Jing Tang;Yi Zheng;Zheng Yuan.
Formation of silicon oxide using non-carbon flowable cvd processes
Jingmei Liang;Nitin K. Ingle;Shankar Venkataraman.
Wet oxidation process performed on a dielectric material formed from a flowable cvd process
Linlin Wang;Abhijit Basu Mallick;Nitin K. Ingle.
SMOOTH SICONI ETCH FOR SILICON-CONTAINING FILMS
Jing Tang;Nitin Ingle;Dongqing Yang.
Dry-etch for silicon-and-nitrogen-containing films
Yunyu Wang;Anchuan Wang;Jingchun Zhang;Nitin K. Ingle.
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