World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
33
Citations
5177
World Ranking
6003
National Ranking
83

Saurabh Lodha publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Saurabh Lodha sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 171 publications — 20th percentile

20% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Saurabh Lodha D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Saurabh Lodha sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 33 D-Index — 14th percentile

14% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Saurabh Lodha is affiliated with the Indian Institute of Technology Bombay in India. Their research primarily spans the fields of Materials Science and Engineering, with a focus on Materials Chemistry, Electrical and Electronic Engineering, and Electronic, Optical and Magnetic Materials. Their work also touches on Biomedical Engineering and Atomic and Molecular Physics, and Optics.

The main topics of Saurabh Lodha's research include 2D Materials and Applications, Ga2O3 and related materials, ZnO doping and properties, Electronic and Structural Properties of Oxides, Advanced Memory and Neural Computing, Semiconductor materials and devices, and Perovskite Materials and Applications.

Some of the frequent coauthors collaborating with Saurabh Lodha are Abin Varghese, Kartikey Thakar, Himani Jawa, Srilagna Sahoo, and Sayantan Ghosh.

The scientist has published extensively across several scholarly journals and platforms. Among the most frequent venues are arXiv (Cornell University), Applied Physics Letters, ACS Nano, ACS Applied Materials & Interfaces, and IEEE Transactions on Electron Devices.

Recent papers contributed by Saurabh Lodha include the following:

  • Near-Direct Bandgap WSe2/ReS2 Type-II pn Heterojunction for Enhanced Ultrafast Photodetection and High-Performance Photovoltaics, 2020, Nano Letters
  • Enhanced responsivity and detectivity of fast WSe2 phototransistor using electrostatically tunable in-plane lateral p-n homojunction, 2021, Nature Communications
  • Optoelectronic and photonic devices based on transition metal dichalcogenides, 2020, Materials Research Express
  • Wavelength-Controlled Photocurrent Polarity Switching in BP-MoS2 Heterostructure, 2022, Advanced Functional Materials
  • Polarity-Tunable Photocurrent through Band Alignment Engineering in a High-Speed WSe2/SnSe2 Diode with Large Negative Responsivity, 2022, ACS Nano

Saurabh Lodha's publication record shows a focus on materials relevant to electronic and photonic device applications, with specific interest in heterojunctions and photodetection mechanisms. The collaboration with recurring coauthors indicates sustained research partnerships in advancing understanding and application of advanced materials systems.

Best Publications

  • Few-Layer MoS2 p-Type Devices Enabled by Selective Doping Using Low Energy Phosphorus Implantation

    Ankur Nipane;Debjani Karmakar;Naveen Kaushik;Shruti Karande

  • Modulation-doped beta-(Al0.2Ga0.8)2O3/Ga2O3 Field-Effect Transistor

    Sriram Krishnamoorthy;Zhanbo Xia;Chandan Joishi;Yuewei Zhang

  • Schottky barrier heights for Au and Pd contacts to MoS2

    Naveen Kaushik;Ankur Nipane;Firdous Basheer;Sudipta Dubey

  • Modulation-doped β-(Al0.2Ga0.8)2O3/Ga2O3 field-effect transistor

    Sriram Krishnamoorthy;Zhanbo Xia;Chandan Joishi;Chandan Joishi;Yuewei Zhang

  • High performance 32nm logic technology featuring 2 nd generation high-k + metal gate transistors

    P. Packan;S. Akbar;M. Armstrong;D. Bergstrom

  • A 32nm logic technology featuring 2 nd -generation high-k + metal-gate transistors, enhanced channel strain and 0.171μm 2 SRAM cell size in a 291Mb array

    S. Natarajan;M. Armstrong;M. Bost;R. Brain

  • Near-Direct Bandgap WSe2/ReS2 Type-II pn Heterojunction for Enhanced Ultrafast Photodetection and High-Performance Photovoltaics.

    Abin Varghese;Abin Varghese;Abin Varghese;Dipankar Saha;Kartikey Thakar;Vishwas Jindal

  • $eta$ -Ga 2 O 3 Delta-Doped Field-Effect Transistors With Current Gain Cutoff Frequency of 27 GHz

    Zhanbo Xia;Hao Xue;Chandan Joishi;Joe Mcglone

  • Demonstration of β-(AlxGa1-x)2O3/Ga2O3 double heterostructure field effect transistors

    Yuewei Zhang;Chandan Joishi;Chandan Joishi;Zhanbo Xia;Mark Brenner

  • Reversible hysteresis inversion in MoS2 field effect transistors

    Naveen Kaushik;David M. A. Mackenzie;Kartikey Thakar;Natasha Goyal

  • Delta Doped $eta$ -Ga2O3 Field Effect Transistors With Regrown Ohmic Contacts

    Zhanbo Xia;Chandan Joishi;Sriram Krishnamoorthy;Sanyam Bajaj

  • Low-pressure CVD-grown β-Ga2O3 bevel-field-plated Schottky barrier diodes

    Chandan Joishi;Chandan Joishi;Subrina Rafique;Subrina Rafique;Zhanbo Xia;Lu Han

  • Fermi-level unpinning and low resistivity in contacts to n-type Ge with a thin ZnO interfacial layer

    Prashanth Paramahans Manik;Ravi Kesh Mishra;V. Pavan Kishore;Prasenjit Ray

  • Contact resistivity reduction through interfacial layer doping in metal-interfacial layer-semiconductor contacts

    Shashank Gupta;Prashanth Paramahans Manik;Ravi Kesh Mishra;Aneesh Nainani

  • Enhanced responsivity and detectivity of fast WSe2 phototransistor using electrostatically tunable in-plane lateral p-n homojunction.

    Sayantan Ghosh;Abin Varghese;Abin Varghese;Abin Varghese;Kartikey Thakar;Sushovan Dhara

  • Trapping Effects in Si $\delta$ -Doped $eta$ -Ga 2 O 3 MESFETs on an Fe-Doped $eta$ -Ga 2 O 3 Substrate

    Joe F. Mcglone;Zhanbo Xia;Yuewei Zhang;Chandan Joishi

  • Multilayer ReS2 Photodetectors with Gate Tunability for High Responsivity and High-Speed Applications.

    Kartikey Thakar;Bablu Mukherjee;Sameer Grover;Naveen Kaushik

  • Punchthrough-Diode-Based Bipolar RRAM Selector by Si Epitaxy

    V. S. S. Srinivasan;S. Chopra;P. Karkare;P. Bafna

  • Optoelectronic and photonic devices based on transition metal dichalcogenides

    Kartikey Thakar;Saurabh Lodha

  • Breakdown Characteristics of $eta$ -(Al 0.22 Ga 0.78 ) 2 O 3 /Ga 2 O 3 Field-Plated Modulation-Doped Field-Effect Transistors

    Chandan Joishi;Yuewei Zhang;Zhanbo Xia;Wenyuan Sun

  • Solution-Processed Poly(3,4-ethylenedioxythiophene) Thin Films as Transparent Conductors: Effect of p-Toluenesulfonic Acid in Dimethyl Sulfoxide

    Smita Mukherjee;Rekha Singh;Sreelekha Gopinathan;Sengottaiyan Murugan

  • Device structure for electronic transport through individual molecules using nanoelectrodes

    Subhasis Ghosh;Henny Halimun;Ajit Kumar Mahapatro;Jaewon Choi

  • Near-direct bandgap $WSe_2$/$ReS_2$ type-II pn heterojunction for enhanced ultrafast photodetection and high-performance photovoltaics

    Abin Varghese;Dipankar Saha;Kartikey Thakar;Vishwas Jindal

Frequent Co-Authors

David B. Janes
David B. Janes Purdue University West Lafayette
Siddharth Rajan
Siddharth Rajan The Ohio State University
Aaron R. Arehart
Aaron R. Arehart The Ohio State University
Sriram Krishnamoorthy
Sriram Krishnamoorthy University of California, Santa Barbara
Souvik Mahapatra
Souvik Mahapatra Indian Institute of Technology Bombay
Steven A. Ringel
Steven A. Ringel The Ohio State University
Nikhil V. Medhekar
Nikhil V. Medhekar Monash University
Lis K. Nanver
Lis K. Nanver University of Twente
Jinwoo Hwang
Jinwoo Hwang The Ohio State University
Deji Akinwande
Deji Akinwande The University of Texas at Austin

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