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D-Index & Metrics

Electronics and Electrical Engineering

D-Index
33
Citations
5177
World Ranking
6003
National Ranking
83

Overview

Saurabh Lodha is affiliated with the Indian Institute of Technology Bombay in India. Their research primarily spans the fields of Materials Science and Engineering, with a focus on Materials Chemistry, Electrical and Electronic Engineering, and Electronic, Optical and Magnetic Materials. Their work also touches on Biomedical Engineering and Atomic and Molecular Physics, and Optics.

The main topics of Saurabh Lodha's research include 2D Materials and Applications, Ga2O3 and related materials, ZnO doping and properties, Electronic and Structural Properties of Oxides, Advanced Memory and Neural Computing, Semiconductor materials and devices, and Perovskite Materials and Applications.

Some of the frequent coauthors collaborating with Saurabh Lodha are Abin Varghese, Kartikey Thakar, Himani Jawa, Srilagna Sahoo, and Sayantan Ghosh.

The scientist has published extensively across several scholarly journals and platforms. Among the most frequent venues are arXiv (Cornell University), Applied Physics Letters, ACS Nano, ACS Applied Materials & Interfaces, and IEEE Transactions on Electron Devices.

Recent papers contributed by Saurabh Lodha include the following:

  • Near-Direct Bandgap WSe2/ReS2 Type-II pn Heterojunction for Enhanced Ultrafast Photodetection and High-Performance Photovoltaics, 2020, Nano Letters
  • Enhanced responsivity and detectivity of fast WSe2 phototransistor using electrostatically tunable in-plane lateral p-n homojunction, 2021, Nature Communications
  • Optoelectronic and photonic devices based on transition metal dichalcogenides, 2020, Materials Research Express
  • Wavelength-Controlled Photocurrent Polarity Switching in BP-MoS2 Heterostructure, 2022, Advanced Functional Materials
  • Polarity-Tunable Photocurrent through Band Alignment Engineering in a High-Speed WSe2/SnSe2 Diode with Large Negative Responsivity, 2022, ACS Nano

Saurabh Lodha's publication record shows a focus on materials relevant to electronic and photonic device applications, with specific interest in heterojunctions and photodetection mechanisms. The collaboration with recurring coauthors indicates sustained research partnerships in advancing understanding and application of advanced materials systems.

Best Publications

  • Few-Layer MoS2 p-Type Devices Enabled by Selective Doping Using Low Energy Phosphorus Implantation

    Ankur Nipane;Debjani Karmakar;Naveen Kaushik;Shruti Karande

  • Modulation-doped beta-(Al0.2Ga0.8)2O3/Ga2O3 Field-Effect Transistor

    Sriram Krishnamoorthy;Zhanbo Xia;Chandan Joishi;Yuewei Zhang

  • Schottky barrier heights for Au and Pd contacts to MoS2

    Naveen Kaushik;Ankur Nipane;Firdous Basheer;Sudipta Dubey

  • Modulation-doped β-(Al0.2Ga0.8)2O3/Ga2O3 field-effect transistor

    Sriram Krishnamoorthy;Zhanbo Xia;Chandan Joishi;Chandan Joishi;Yuewei Zhang

  • High performance 32nm logic technology featuring 2 nd generation high-k + metal gate transistors

    P. Packan;S. Akbar;M. Armstrong;D. Bergstrom

  • A 32nm logic technology featuring 2 nd -generation high-k + metal-gate transistors, enhanced channel strain and 0.171μm 2 SRAM cell size in a 291Mb array

    S. Natarajan;M. Armstrong;M. Bost;R. Brain

  • Near-Direct Bandgap WSe2/ReS2 Type-II pn Heterojunction for Enhanced Ultrafast Photodetection and High-Performance Photovoltaics.

    Abin Varghese;Abin Varghese;Abin Varghese;Dipankar Saha;Kartikey Thakar;Vishwas Jindal

  • $eta$ -Ga 2 O 3 Delta-Doped Field-Effect Transistors With Current Gain Cutoff Frequency of 27 GHz

    Zhanbo Xia;Hao Xue;Chandan Joishi;Joe Mcglone

  • Demonstration of β-(AlxGa1-x)2O3/Ga2O3 double heterostructure field effect transistors

    Yuewei Zhang;Chandan Joishi;Chandan Joishi;Zhanbo Xia;Mark Brenner

  • Reversible hysteresis inversion in MoS2 field effect transistors

    Naveen Kaushik;David M. A. Mackenzie;Kartikey Thakar;Natasha Goyal

  • Delta Doped $eta$ -Ga2O3 Field Effect Transistors With Regrown Ohmic Contacts

    Zhanbo Xia;Chandan Joishi;Sriram Krishnamoorthy;Sanyam Bajaj

  • Low-pressure CVD-grown β-Ga2O3 bevel-field-plated Schottky barrier diodes

    Chandan Joishi;Chandan Joishi;Subrina Rafique;Subrina Rafique;Zhanbo Xia;Lu Han

  • Fermi-level unpinning and low resistivity in contacts to n-type Ge with a thin ZnO interfacial layer

    Prashanth Paramahans Manik;Ravi Kesh Mishra;V. Pavan Kishore;Prasenjit Ray

  • Contact resistivity reduction through interfacial layer doping in metal-interfacial layer-semiconductor contacts

    Shashank Gupta;Prashanth Paramahans Manik;Ravi Kesh Mishra;Aneesh Nainani

  • Enhanced responsivity and detectivity of fast WSe2 phototransistor using electrostatically tunable in-plane lateral p-n homojunction.

    Sayantan Ghosh;Abin Varghese;Abin Varghese;Abin Varghese;Kartikey Thakar;Sushovan Dhara

  • Trapping Effects in Si $\delta$ -Doped $eta$ -Ga 2 O 3 MESFETs on an Fe-Doped $eta$ -Ga 2 O 3 Substrate

    Joe F. Mcglone;Zhanbo Xia;Yuewei Zhang;Chandan Joishi

  • Multilayer ReS2 Photodetectors with Gate Tunability for High Responsivity and High-Speed Applications.

    Kartikey Thakar;Bablu Mukherjee;Sameer Grover;Naveen Kaushik

  • Punchthrough-Diode-Based Bipolar RRAM Selector by Si Epitaxy

    V. S. S. Srinivasan;S. Chopra;P. Karkare;P. Bafna

  • Optoelectronic and photonic devices based on transition metal dichalcogenides

    Kartikey Thakar;Saurabh Lodha

  • Breakdown Characteristics of $eta$ -(Al 0.22 Ga 0.78 ) 2 O 3 /Ga 2 O 3 Field-Plated Modulation-Doped Field-Effect Transistors

    Chandan Joishi;Yuewei Zhang;Zhanbo Xia;Wenyuan Sun

  • Solution-Processed Poly(3,4-ethylenedioxythiophene) Thin Films as Transparent Conductors: Effect of p-Toluenesulfonic Acid in Dimethyl Sulfoxide

    Smita Mukherjee;Rekha Singh;Sreelekha Gopinathan;Sengottaiyan Murugan

  • Device structure for electronic transport through individual molecules using nanoelectrodes

    Subhasis Ghosh;Henny Halimun;Ajit Kumar Mahapatro;Jaewon Choi

  • Near-direct bandgap $WSe_2$/$ReS_2$ type-II pn heterojunction for enhanced ultrafast photodetection and high-performance photovoltaics

    Abin Varghese;Dipankar Saha;Kartikey Thakar;Vishwas Jindal

Frequent Co-Authors

David B. Janes
David B. Janes Purdue University West Lafayette
Siddharth Rajan
Siddharth Rajan The Ohio State University
Aaron R. Arehart
Aaron R. Arehart The Ohio State University
Souvik Mahapatra
Souvik Mahapatra Indian Institute of Technology Bombay
Steven A. Ringel
Steven A. Ringel The Ohio State University
Nikhil V. Medhekar
Nikhil V. Medhekar Monash University
Hongping Zhao
Hongping Zhao The Ohio State University
Lis K. Nanver
Lis K. Nanver University of Twente
Jinwoo Hwang
Jinwoo Hwang The Ohio State University
Deji Akinwande
Deji Akinwande The University of Texas at Austin

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