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D-Index & Metrics

Discipline name D-Index World Ranking Current World Ranking National Ranking Current National Ranking Publications Citations
Electronics and Electrical Engineering 33 6003 5765 83 83 171 5177

Saurabh Lodha publications per year

The chart shows the history of publications by Saurabh Lodha between 2000 and 2025, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. Saurabh Lodha published across 26 years, from 2000 to 2025, averaging 7.4 papers a year. Output peaked at 20 publications in 2018. 18 of the 193 publications appeared in the last two years.

No. of publications
5 10 15 20
Bar chart. Horizontal axis: year, 2000 to 2025. Vertical axis: number of publications, 0 to 20. Peak 20 publications in 2018. 2000: 1 publication 2001: 0 publications 2002: 2 publications 2003: 6 publications 2004: 3 publications 2005: 1 publication 2006: 3 publications 2007: 0 publications 2008: 1 publication 2009: 2 publications 2010: 0 publications 2011: 0 publications 2012: 9 publications 2013: 13 publications 2014: 15 publications 2015: 11 publications 2016: 9 publications 2017: 12 publications 2018: 20 publications 2019: 20 publications 2020: 12 publications 2021: 20 publications 2022: 5 publications 2023: 10 publications 2024: 13 publications 2025: 5 publications
2000 2025

193 publications in total across all disciplines

View publications per year as a table
Saurabh Lodha: publications per year, 2000 to 2025
Year Publications
2000 1
2001 0
2002 2
2003 6
2004 3
2005 1
2006 3
2007 0
2008 1
2009 2
2010 0
2011 0
2012 9
2013 13
2014 15
2015 11
2016 9
2017 12
2018 20
2019 20
2020 12
2021 20
2022 5
2023 10
2024 13
2025 5
Total 193
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Saurabh Lodha publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Saurabh Lodha sits on this spectrum.

No. of scientists
100 200 300 400
Bar chart with 53 bars. Horizontal axis: publications, 34–53 to 1,065+. Vertical axis: number of scientists, 0 to 445. Most scientists, 445, have 174–193 publications. The last bar groups every scientist with 1,065 publications or more. The highlighted bar, 154–173 publications, is where this scientist sits. 34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34–53 publications 1,065+

This scientist: 171 publications — 20th percentile

20% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

View publications distribution as a table
Number of Electronics and Electrical Engineering scientists by publication count, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
Publications Scientists This scientist
34–53 24
54–73 52
74–93 114
94–113 203
114–133 269
134–153 355
154–173 403 171
174–193 445
194–213 430
214–233 431
234–253 399
254–273 366
274–293 335
294–313 300
314–333 276
334–353 250
354–373 214
374–393 187
394–413 152
414–433 169
434–453 147
454–473 111
474–493 117
494–513 103
514–533 99
534–553 92
554–573 75
574–593 58
594–613 69
614–633 50
634–653 62
654–673 54
674–693 44
694–713 37
714–733 28
734–753 26
754–773 26
774–793 19
794–813 23
814–833 20
834–853 16
854–873 20
874–893 11
894–913 11
914–933 16
934–953 13
954–973 10
974–993 11
994–1,013 9
1,014–1,033 9
1,034–1,053 10
1,054–1,064 6
1,065+ 99
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Saurabh Lodha D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Saurabh Lodha sits on this spectrum.

No. of scientists
50 100 150 200 250
Bar chart with 82 bars. Horizontal axis: D-Index, 30 to 111+. Vertical axis: number of scientists, 0 to 263. Most scientists, 263, have 32 D-Index. The last bar groups every scientist with 111 D-Index or more. The highlighted bar, 33 D-Index, is where this scientist sits. 30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 33 D-Index — 14th percentile

14% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

View D-Index distribution as a table
Number of Electronics and Electrical Engineering scientists by D-index, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
D-Index Scientists This scientist
30 178
31 257
32 263
33 262 33
34 244
35 236
36 211
37 220
38 214
39 214
40 205
41 187
42 194
43 201
44 155
45 189
46 148
47 160
48 134
49 130
50 141
51 156
52 108
53 130
54 112
55 97
56 111
57 102
58 108
59 120
60 103
61 93
62 92
63 74
64 77
65 73
66 64
67 69
68 60
69 39
70 57
71 59
72 46
73 49
74 38
75 35
76 32
77 35
78 31
79 22
80 34
81 31
82 34
83 23
84 18
85 30
86 19
87 19
88 20
89 8
90 17
91 7
92 14
93 9
94 15
95 10
96 12
97 10
98 10
99 12
100 16
101 5
102 7
103 7
104 8
105 9
106 13
107 4
108 5
109 10
110 8
111+ 96
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Overview

Saurabh Lodha is affiliated with the Indian Institute of Technology Bombay in India. Their research primarily spans the fields of Materials Science and Engineering, with a focus on Materials Chemistry, Electrical and Electronic Engineering, and Electronic, Optical and Magnetic Materials. Their work also touches on Biomedical Engineering and Atomic and Molecular Physics, and Optics.

The main topics of Saurabh Lodha's research include 2D Materials and Applications, Ga2O3 and related materials, ZnO doping and properties, Electronic and Structural Properties of Oxides, Advanced Memory and Neural Computing, Semiconductor materials and devices, and Perovskite Materials and Applications.

Some of the frequent coauthors collaborating with Saurabh Lodha are Abin Varghese, Kartikey Thakar, Himani Jawa, Srilagna Sahoo, and Sayantan Ghosh.

The scientist has published extensively across several scholarly journals and platforms. Among the most frequent venues are arXiv (Cornell University), Applied Physics Letters, ACS Nano, ACS Applied Materials & Interfaces, and IEEE Transactions on Electron Devices.

Recent papers contributed by Saurabh Lodha include the following:

  • Near-Direct Bandgap WSe2/ReS2 Type-II pn Heterojunction for Enhanced Ultrafast Photodetection and High-Performance Photovoltaics, 2020, Nano Letters
  • Enhanced responsivity and detectivity of fast WSe2 phototransistor using electrostatically tunable in-plane lateral p-n homojunction, 2021, Nature Communications
  • Optoelectronic and photonic devices based on transition metal dichalcogenides, 2020, Materials Research Express
  • Wavelength-Controlled Photocurrent Polarity Switching in BP-MoS2 Heterostructure, 2022, Advanced Functional Materials
  • Polarity-Tunable Photocurrent through Band Alignment Engineering in a High-Speed WSe2/SnSe2 Diode with Large Negative Responsivity, 2022, ACS Nano

Saurabh Lodha's publication record shows a focus on materials relevant to electronic and photonic device applications, with specific interest in heterojunctions and photodetection mechanisms. The collaboration with recurring coauthors indicates sustained research partnerships in advancing understanding and application of advanced materials systems.

Best Publications

  • Few-Layer MoS2 p-Type Devices Enabled by Selective Doping Using Low Energy Phosphorus Implantation

    Ankur Nipane;Debjani Karmakar;Naveen Kaushik;Shruti Karande

  • Modulation-doped beta-(Al0.2Ga0.8)2O3/Ga2O3 Field-Effect Transistor

    Sriram Krishnamoorthy;Zhanbo Xia;Chandan Joishi;Yuewei Zhang

  • Schottky barrier heights for Au and Pd contacts to MoS2

    Naveen Kaushik;Ankur Nipane;Firdous Basheer;Sudipta Dubey

  • Modulation-doped β-(Al0.2Ga0.8)2O3/Ga2O3 field-effect transistor

    Sriram Krishnamoorthy;Zhanbo Xia;Chandan Joishi;Chandan Joishi;Yuewei Zhang

  • High performance 32nm logic technology featuring 2 nd generation high-k + metal gate transistors

    P. Packan;S. Akbar;M. Armstrong;D. Bergstrom

  • A 32nm logic technology featuring 2 nd -generation high-k + metal-gate transistors, enhanced channel strain and 0.171μm 2 SRAM cell size in a 291Mb array

    S. Natarajan;M. Armstrong;M. Bost;R. Brain

  • Near-Direct Bandgap WSe2/ReS2 Type-II pn Heterojunction for Enhanced Ultrafast Photodetection and High-Performance Photovoltaics.

    Abin Varghese;Abin Varghese;Abin Varghese;Dipankar Saha;Kartikey Thakar;Vishwas Jindal

  • $eta$ -Ga 2 O 3 Delta-Doped Field-Effect Transistors With Current Gain Cutoff Frequency of 27 GHz

    Zhanbo Xia;Hao Xue;Chandan Joishi;Joe Mcglone

  • Demonstration of β-(AlxGa1-x)2O3/Ga2O3 double heterostructure field effect transistors

    Yuewei Zhang;Chandan Joishi;Chandan Joishi;Zhanbo Xia;Mark Brenner

  • Reversible hysteresis inversion in MoS2 field effect transistors

    Naveen Kaushik;David M. A. Mackenzie;Kartikey Thakar;Natasha Goyal

  • Delta Doped $eta$ -Ga2O3 Field Effect Transistors With Regrown Ohmic Contacts

    Zhanbo Xia;Chandan Joishi;Sriram Krishnamoorthy;Sanyam Bajaj

  • Low-pressure CVD-grown β-Ga2O3 bevel-field-plated Schottky barrier diodes

    Chandan Joishi;Chandan Joishi;Subrina Rafique;Subrina Rafique;Zhanbo Xia;Lu Han

  • Fermi-level unpinning and low resistivity in contacts to n-type Ge with a thin ZnO interfacial layer

    Prashanth Paramahans Manik;Ravi Kesh Mishra;V. Pavan Kishore;Prasenjit Ray

  • Contact resistivity reduction through interfacial layer doping in metal-interfacial layer-semiconductor contacts

    Shashank Gupta;Prashanth Paramahans Manik;Ravi Kesh Mishra;Aneesh Nainani

  • Enhanced responsivity and detectivity of fast WSe2 phototransistor using electrostatically tunable in-plane lateral p-n homojunction.

    Sayantan Ghosh;Abin Varghese;Abin Varghese;Abin Varghese;Kartikey Thakar;Sushovan Dhara

  • Trapping Effects in Si $\delta$ -Doped $eta$ -Ga 2 O 3 MESFETs on an Fe-Doped $eta$ -Ga 2 O 3 Substrate

    Joe F. Mcglone;Zhanbo Xia;Yuewei Zhang;Chandan Joishi

  • Multilayer ReS2 Photodetectors with Gate Tunability for High Responsivity and High-Speed Applications.

    Kartikey Thakar;Bablu Mukherjee;Sameer Grover;Naveen Kaushik

  • Punchthrough-Diode-Based Bipolar RRAM Selector by Si Epitaxy

    V. S. S. Srinivasan;S. Chopra;P. Karkare;P. Bafna

  • Optoelectronic and photonic devices based on transition metal dichalcogenides

    Kartikey Thakar;Saurabh Lodha

  • Breakdown Characteristics of $eta$ -(Al 0.22 Ga 0.78 ) 2 O 3 /Ga 2 O 3 Field-Plated Modulation-Doped Field-Effect Transistors

    Chandan Joishi;Yuewei Zhang;Zhanbo Xia;Wenyuan Sun

  • Solution-Processed Poly(3,4-ethylenedioxythiophene) Thin Films as Transparent Conductors: Effect of p-Toluenesulfonic Acid in Dimethyl Sulfoxide

    Smita Mukherjee;Rekha Singh;Sreelekha Gopinathan;Sengottaiyan Murugan

  • Device structure for electronic transport through individual molecules using nanoelectrodes

    Subhasis Ghosh;Henny Halimun;Ajit Kumar Mahapatro;Jaewon Choi

  • Near-direct bandgap $WSe_2$/$ReS_2$ type-II pn heterojunction for enhanced ultrafast photodetection and high-performance photovoltaics

    Abin Varghese;Dipankar Saha;Kartikey Thakar;Vishwas Jindal

Frequent Co-Authors

David B. Janes
David B. Janes Purdue University West Lafayette
Siddharth Rajan
Siddharth Rajan The Ohio State University
Aaron R. Arehart
Aaron R. Arehart The Ohio State University
Sriram Krishnamoorthy
Sriram Krishnamoorthy University of California, Santa Barbara
Souvik Mahapatra
Souvik Mahapatra Indian Institute of Technology Bombay
Steven A. Ringel
Steven A. Ringel The Ohio State University
Nikhil V. Medhekar
Nikhil V. Medhekar Monash University
Lis K. Nanver
Lis K. Nanver University of Twente
Jinwoo Hwang
Jinwoo Hwang The Ohio State University
Deji Akinwande
Deji Akinwande The University of Texas at Austin

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