World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
32
Citations
4138
World Ranking
6332
National Ranking
78

Lis K. Nanver publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Lis K. Nanver sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 289 publications — 55th percentile

55% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Lis K. Nanver D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Lis K. Nanver sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 32 D-Index — 10th percentile

10% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Lis K. Nanver is affiliated with the University of Twente in the Netherlands and has conducted extensive research primarily in the fields of Engineering and Physics and Astronomy. Their work is concentrated within subfields including Electrical and Electronic Engineering, Atomic and Molecular Physics and Optics, Materials Chemistry, and Biomedical Engineering.

The principal areas of research focus on semiconductor materials and interfaces, semiconductor materials and devices, silicon nanostructures and photoluminescence, silicon and solar cell technologies, photonic and optical devices, silicon carbide semiconductor technologies, and integrated circuits and semiconductor failure analysis.

Lis K. Nanver has published several scientific papers in notable journals. Selected publications include:

  • Nanometer-thin pure boron CVD layers as material barrier to Au or Cu metallization of Si, 2021, Journal of Materials Science Materials in Electronics
  • Investigation of Pd/MoOx/n-Si diodes for bipolar transistor and light-emitting device applications, 2020, Journal of Applied Physics
  • PureB diode fabrication using physical or chemical vapor deposition methods for increased back-end-of-line accessibility, 2020, Solid-State Electronics
  • Nanolayer boron-semiconductor interfaces and their device applications, 2021, Solid-State Electronics
  • Low-Temperature Electrical Performance of PureB Photodiodes Revealing Al-Metallization-Related Degradation of Dark Currents, 2021, IEEE Transactions on Electron Devices

Their frequent coauthors include Tihomir Knežević, Shivakumar D. Thammaiah, Xingyu Liu, Asma Attariabad, and Vinayak Vishwanath Hassan.

Lis K. Nanver's work has appeared predominantly in the following venues:

  • Solid-State Electronics
  • Journal of Materials Science Materials in Electronics
  • Journal of Applied Physics
  • Journal of Electronic Materials
  • Optics Express

Best Publications

  • Adaptive Multi-Band Multi-Mode Power Amplifier Using Integrated Varactor-Based Tunable Matching Networks

    W.C.E. Neo;Yu Lin;Xiao-dong Liu;L.C.N. de Vreede

  • Surface-passivated high-resistivity silicon substrates for RFICs

    B. Rong;J.N. Burghartz;L.K. Nanver;B. Rejaei

  • “Distortion-Free” Varactor Diode Topologies for RF Adaptivity

    K. Buisman;L. C. N. de Vreede;L.E. Larson;M. Spirito

  • Chemical Vapor Deposition of α -Boron Layers on Silicon for Controlled Nanometer-Deep p + n Junction Formation

    Francesco Sarubbi;Tom L. M. Scholtes;Lis K. Nanver

  • A back-wafer contacted silicon-on-glass integrated bipolar process. Part I. The conflict electrical versus thermal isolation

    L.K. Nanver;N. Nenadovic;V. d'Alessandro;H. Schellevis

  • SiGe growth on patterned Si(001) substrates: Surface evolution and evidence of modified island coarsening

    Jianjun Zhang;Mathieu Stoffel;Armando Rastelli;Oliver G. Schmidt

  • Extraction and modeling of self-heating and mutual thermal coupling impedance of bipolar transistors

    Nebojsa Nenadovic;Slobodan Mijalkovic;Lis K. Nanver;Lode K. J. Vandamme

  • A back-wafer contacted silicon-on-glass integrated bipolar process. Part II. A novel analysis of thermal breakdown

    N. Nenadovic;V. d'Alessandro;L.K. Nanver;F. Tamigi

  • X-ray Nanodiffraction on a Single SiGe Quantum Dot inside a Functioning Field-Effect Transistor

    Nina Hrauda;Jianjun Zhang;Eugen Wintersberger;Tanja Etzelstorfer

  • Extraction and modeling of self-heating and mutual thermal coupling impedance of bipolar transistors

    N. Nenadovic;S. Mijalkovic;L.K. Nanver;L.K.J. Vandamme

  • Robust UV/VUV/EUV PureB Photodiode Detector Technology With High CMOS Compatibility

    Lis K. Nanver;Lin Qi;Vahid Mohammadi;K. R. M. Mok

  • High Effective Gummel Number of CVD Boron Layers in Ultrashallow $\hbox{p}^{+}\hbox{n}$ Diode Configurations

    Francesco Sarubbi;Lis K Nanver;Tom L M Scholtes

  • Pure boron-doped photodiodes: A solution for radiation detection in EUV lithography

    F. Sarubbi;L.K. Nanver;T. Scholtes;S.N. Nihtianov

  • Surface-passivated high-resistivity silicon as a true microwave substrate

    M. Spirito;F.M. De Paola;L.K. Nanver;E. Valletta

  • Boron-layer silicon photodiodes for high-efficiency low-energy electron detection

    Agata Šakić;Lis K. Nanver;Tom L.M. Scholtes;Carel Th.H. Heerkens

  • n-Channel MOSFETs Fabricated on SiGe Dots for Strain-Enhanced Mobility

    V Jovanović;C Biasotto;L K Nanver;J Moers

  • DIMES-01, a baseline BIFET process for smart sensor experimentation

    L.K. Nanver;E.J.G. Goudena;H.W. van Zeijl

  • High-Efficiency Silicon Photodiode Detector for Sub-keV Electron Microscopy

    A. Sakic;G. van Veen;K. Kooijman;P. Vogelsang

  • CVD Delta-Doped Boron Surface Layers for Ultra-Shallow Junction Formation

    Francesco Sarubbi;Lis K. Nanver;Tom L.M. Scholtes

  • RF power silicon-on-glass VDMOSFETs

    N. Nenadovic;V. Cuoco;S.J.C.H. Theeuwen;H. Schellevis

  • Low-distortion, low-loss varactor-based adaptive matching networks, implemented in a silicon-on-glass technology

    K. Buisman;L.C.N. de Vreede;L.E. Larson;M. Spirito

  • Opto-electronic modeling of light emission from avalanche-mode silicon p+n junctions

    Satadal Dutta;Raymond Josephus Engelbart Hueting;Anne J. Annema;Lin Qi

Frequent Co-Authors

Vincenzo d'Alessandro
Vincenzo d'Alessandro Polytechnic University of Turin
Joachim N. Burghartz
Joachim N. Burghartz University of Stuttgart
Lawrence E. Larson
Lawrence E. Larson Brown University
Edoardo Charbon
Edoardo Charbon École Polytechnique Fédérale de Lausanne
Oliver G. Schmidt
Oliver G. Schmidt Chemnitz University of Technology
G. Bauer
G. Bauer Johannes Kepler University of Linz
Julian Stangl
Julian Stangl Johannes Kepler University of Linz
Detlev Grützmacher
Detlev Grützmacher Forschungszentrum Jülich
Jurriaan Schmitz
Jurriaan Schmitz University of Twente
Bram Nauta
Bram Nauta University of Twente

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