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D-Index & Metrics

Electronics and Electrical Engineering

D-Index
32
Citations
4138
World Ranking
6333
National Ranking
78

Overview

Lis K. Nanver is affiliated with the University of Twente in the Netherlands and has conducted extensive research primarily in the fields of Engineering and Physics and Astronomy. Their work is concentrated within subfields including Electrical and Electronic Engineering, Atomic and Molecular Physics and Optics, Materials Chemistry, and Biomedical Engineering.

The principal areas of research focus on semiconductor materials and interfaces, semiconductor materials and devices, silicon nanostructures and photoluminescence, silicon and solar cell technologies, photonic and optical devices, silicon carbide semiconductor technologies, and integrated circuits and semiconductor failure analysis.

Lis K. Nanver has published several scientific papers in notable journals. Selected publications include:

  • Nanometer-thin pure boron CVD layers as material barrier to Au or Cu metallization of Si, 2021, Journal of Materials Science Materials in Electronics
  • Investigation of Pd/MoOx/n-Si diodes for bipolar transistor and light-emitting device applications, 2020, Journal of Applied Physics
  • PureB diode fabrication using physical or chemical vapor deposition methods for increased back-end-of-line accessibility, 2020, Solid-State Electronics
  • Nanolayer boron-semiconductor interfaces and their device applications, 2021, Solid-State Electronics
  • Low-Temperature Electrical Performance of PureB Photodiodes Revealing Al-Metallization-Related Degradation of Dark Currents, 2021, IEEE Transactions on Electron Devices

Their frequent coauthors include Tihomir Knežević, Shivakumar D. Thammaiah, Xingyu Liu, Asma Attariabad, and Vinayak Vishwanath Hassan.

Lis K. Nanver's work has appeared predominantly in the following venues:

  • Solid-State Electronics
  • Journal of Materials Science Materials in Electronics
  • Journal of Applied Physics
  • Journal of Electronic Materials
  • Optics Express

Best Publications

  • Adaptive Multi-Band Multi-Mode Power Amplifier Using Integrated Varactor-Based Tunable Matching Networks

    W.C.E. Neo;Yu Lin;Xiao-dong Liu;L.C.N. de Vreede

  • Surface-passivated high-resistivity silicon substrates for RFICs

    B. Rong;J.N. Burghartz;L.K. Nanver;B. Rejaei

  • “Distortion-Free” Varactor Diode Topologies for RF Adaptivity

    K. Buisman;L. C. N. de Vreede;L.E. Larson;M. Spirito

  • Chemical Vapor Deposition of α -Boron Layers on Silicon for Controlled Nanometer-Deep p + n Junction Formation

    Francesco Sarubbi;Tom L. M. Scholtes;Lis K. Nanver

  • A back-wafer contacted silicon-on-glass integrated bipolar process. Part I. The conflict electrical versus thermal isolation

    L.K. Nanver;N. Nenadovic;V. d'Alessandro;H. Schellevis

  • SiGe growth on patterned Si(001) substrates: Surface evolution and evidence of modified island coarsening

    Jianjun Zhang;Mathieu Stoffel;Armando Rastelli;Oliver G. Schmidt

  • Extraction and modeling of self-heating and mutual thermal coupling impedance of bipolar transistors

    Nebojsa Nenadovic;Slobodan Mijalkovic;Lis K. Nanver;Lode K. J. Vandamme

  • A back-wafer contacted silicon-on-glass integrated bipolar process. Part II. A novel analysis of thermal breakdown

    N. Nenadovic;V. d'Alessandro;L.K. Nanver;F. Tamigi

  • X-ray Nanodiffraction on a Single SiGe Quantum Dot inside a Functioning Field-Effect Transistor

    Nina Hrauda;Jianjun Zhang;Eugen Wintersberger;Tanja Etzelstorfer

  • Extraction and modeling of self-heating and mutual thermal coupling impedance of bipolar transistors

    N. Nenadovic;S. Mijalkovic;L.K. Nanver;L.K.J. Vandamme

  • Robust UV/VUV/EUV PureB Photodiode Detector Technology With High CMOS Compatibility

    Lis K. Nanver;Lin Qi;Vahid Mohammadi;K. R. M. Mok

  • High Effective Gummel Number of CVD Boron Layers in Ultrashallow $\hbox{p}^{+}\hbox{n}$ Diode Configurations

    Francesco Sarubbi;Lis K Nanver;Tom L M Scholtes

  • Pure boron-doped photodiodes: A solution for radiation detection in EUV lithography

    F. Sarubbi;L.K. Nanver;T. Scholtes;S.N. Nihtianov

  • Surface-passivated high-resistivity silicon as a true microwave substrate

    M. Spirito;F.M. De Paola;L.K. Nanver;E. Valletta

  • Boron-layer silicon photodiodes for high-efficiency low-energy electron detection

    Agata Šakić;Lis K. Nanver;Tom L.M. Scholtes;Carel Th.H. Heerkens

  • n-Channel MOSFETs Fabricated on SiGe Dots for Strain-Enhanced Mobility

    V Jovanović;C Biasotto;L K Nanver;J Moers

  • DIMES-01, a baseline BIFET process for smart sensor experimentation

    L.K. Nanver;E.J.G. Goudena;H.W. van Zeijl

  • High-Efficiency Silicon Photodiode Detector for Sub-keV Electron Microscopy

    A. Sakic;G. van Veen;K. Kooijman;P. Vogelsang

  • CVD Delta-Doped Boron Surface Layers for Ultra-Shallow Junction Formation

    Francesco Sarubbi;Lis K. Nanver;Tom L.M. Scholtes

  • RF power silicon-on-glass VDMOSFETs

    N. Nenadovic;V. Cuoco;S.J.C.H. Theeuwen;H. Schellevis

  • Low-distortion, low-loss varactor-based adaptive matching networks, implemented in a silicon-on-glass technology

    K. Buisman;L.C.N. de Vreede;L.E. Larson;M. Spirito

  • Opto-electronic modeling of light emission from avalanche-mode silicon p+n junctions

    Satadal Dutta;Raymond Josephus Engelbart Hueting;Anne J. Annema;Lin Qi

Frequent Co-Authors

Joachim N. Burghartz
Joachim N. Burghartz University of Stuttgart
Lawrence E. Larson
Lawrence E. Larson Brown University
Edoardo Charbon
Edoardo Charbon École Polytechnique Fédérale de Lausanne
Oliver G. Schmidt
Oliver G. Schmidt Chemnitz University of Technology
G. Bauer
G. Bauer Johannes Kepler University of Linz
Detlev Grützmacher
Detlev Grützmacher Forschungszentrum Jülich
Julian Stangl
Julian Stangl Johannes Kepler University of Linz
Bram Nauta
Bram Nauta University of Twente
Jurriaan Schmitz
Jurriaan Schmitz University of Twente
Pasqualina M. Sarro
Pasqualina M. Sarro Delft University of Technology

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