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Joachim N. Burghartz

Joachim N. Burghartz

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
56
Citations
12513
World Ranking
2067
National Ranking
64

Research.com Recognitions

  • 2002 - IEEE Fellow For contributions to integrated high-speed and radio-frequency silicon devices and components.

Overview

Joachim N. Burghartz is affiliated with the University of Stuttgart in Germany. Their research primarily focuses on engineering, with a strong emphasis on electrical and electronic engineering.

The main fields of study covered in their work include:

  • Electrical and Electronic Engineering
  • Biomedical Engineering
  • Condensed Matter Physics
  • Bioengineering
  • Materials Chemistry

The topics frequently addressed in their publications span:

  • Thin-Film Transistor Technologies
  • GaN-based semiconductor devices and materials
  • Organic Electronics and Photovoltaics
  • Semiconductor materials and devices
  • Silicon Carbide Semiconductor Technologies
  • CCD and CMOS Imaging Sensors
  • Analytical Chemistry and Sensors

A number of recent papers authored or co-authored by Burghartz include:

  • Flexible low-voltage high-frequency organic thin-film transistors, 2020, Science Advances
  • Low-Power Organic Light Sensor Array Based on Active-Matrix Common-Gate Transimpedance Amplifier on Foil for Imaging Applications, 2020, IEEE Journal of Solid-State Circuits
  • Analysis of an AlGaN/AlN Super-Lattice Buffer Concept for 650-V Low-Dispersion and High-Reliability GaN HEMTs, 2020, IEEE Transactions on Electron Devices
  • Subthreshold Swing of 59 mV decade−1 in Nanoscale Flexible Ultralow-Voltage Organic Transistors, 2022, Advanced Electronic Materials
  • High-gain, low-voltage unipolar logic circuits based on nanoscale flexible organic thin-film transistors with small signal delays, 2023, Science Advances

Frequent co-authors in their work include:

  • R Todi
  • Giovanni Ghione
  • K. Ishimaru
  • M Polavarapu
  • M Radhakrishnan

Burghartz frequently publishes in venues such as:

  • IEEE Transactions on Electron Devices
  • IEEE Electron Devices Magazine
  • IEEE Sensors Journal
  • IEEE Journal of Photovoltaics
  • Advanced Electronic Materials

In 2002, Joachim N. Burghartz was recognized as an IEEE Fellow for contributions to integrated high-speed and radio-frequency silicon devices and components.

Best Publications

  • Method of forming an integrated circuit toroidal inductor

    Burghartz Joachim Norbert;Edelstein Daniel Charles;Jahnes Christopher Vincent;Uzoh Cyprian Emeka

  • 75-GHz f/sub T/ SiGe-base heterojunction bipolar transistors

    G.L. Patton;J.H. Comfort;B.S. Meyerson;E.F. Crabbe

  • On the design of RF spiral inductors on silicon

    J.N. Burghartz;B. Rejaei

  • RF circuit design aspects of spiral inductors on silicon

    J.N. Burghartz;D.C. Edelstein;M. Soyuer;H.A. Ainspan

  • Microwave inductors and capacitors in standard multilevel interconnect silicon technology

    J.N. Burghartz;M. Soyuer;K.A. Jenkins

  • Bridging the gap between optical fibers and silicon photonic integrated circuits.

    Wissem Sfar Zaoui;Andreas Kunze;Wolfgang Vogel;Manfred Berroth

  • Contact Resistance and Megahertz Operation of Aggressively Scaled Organic Transistors

    Frederik Ante;Daniel Kälblein;Tarek Zaki;Ute Zschieschang

  • Small contact resistance and high-frequency operation of flexible low-voltage inverted coplanar organic transistors

    James W. Borchert;James W. Borchert;Boyu Peng;Florian Letzkus;Joachim N. Burghartz

  • Integrated circuit inductor

    Joachim Norbert Burghartz;Daniel Charles Edelstein;Christopher Vincent Jahnes;Cyprian Emeka Uzoh

  • Multilevel-spiral inductors using VLSI interconnect technology

    J.N. Burghartz;K.A. Jenkins;M. Soyuer

  • Substrate effects in monolithic RF transformers on silicon

    K.T. Ng;B. Rejaei;J.N. Burghartz

  • Spiral inductors and transmission lines in silicon technology using copper-damascene interconnects and low-loss substrates

    J.N. Burghartz;D.C. Edelstein;K.A. Jenkiin;Y.H. Kwark

  • Surface-passivated high-resistivity silicon substrates for RFICs

    B. Rong;J.N. Burghartz;L.K. Nanver;B. Rejaei

  • Flexible low-voltage high-frequency organic thin-film transistors.

    James W. Borchert;James W. Borchert;Ute Zschieschang;Florian Letzkus;Michele Giorgio;Michele Giorgio

  • Ultra-thin Chip Technology and Applications

    Joachim Burghartz

  • Spray coating of photoresist for pattern transfer on high topography surfaces

    Nga P Pham;Joachim N Burghartz;Pasqualina M Sarro

  • Integrated RF and microwave components in BiCMOS technology

    J.N. Burghartz;M. Soyuer;K.A. Jenkins

  • Progress in RF inductors on silicon-understanding substrate losses

    J.N. Burghartz

  • Detailed analysis and contact properties of low-voltage organic thin-film transistors based on dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene (DNTT) and its didecyl and diphenyl derivatives

    Ulrike Kraft;Kazuo Takimiya;Myeong Jin Kang;Reinhold Rödel

  • Flexible Low-Voltage Organic Complementary Circuits: Finding the Optimum Combination of Semiconductors and Monolayer Gate Dielectrics

    Ulrike Kraft;Mirsada Sejfić;Myeong Jin Kang;Kazuo Takimiya

  • An integration scheme for rf power harvesting

    H Yan;JG Macias Montero;AB Akhnoukh;Lcn de Vreede

Frequent Co-Authors

Keith A. Jenkins
Keith A. Jenkins IBM (United States)
Hagen Klauk
Hagen Klauk Max Planck Institute for Solid State Research
Ute Zschieschang
Ute Zschieschang Max Planck Institute for Solid State Research
Pasqualina M. Sarro
Pasqualina M. Sarro Delft University of Technology
Bernard S. Meyerson
Bernard S. Meyerson IBM (United States)
David L. Harame
David L. Harame IBM (United States)
John D. Cressler
John D. Cressler Georgia Institute of Technology
Lis K. Nanver
Lis K. Nanver University of Twente
Johannes M. C. Stork
Johannes M. C. Stork ON Semiconductor (United States)
Kazuo Takimiya
Kazuo Takimiya Tohoku University

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