World's Best Scientists 2026 revealed!
Joachim N. Burghartz

Joachim N. Burghartz

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
56
Citations
12513
World Ranking
2067
National Ranking
63

Joachim N. Burghartz publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Joachim N. Burghartz sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 409 publications — 75th percentile

75% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Joachim N. Burghartz D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Joachim N. Burghartz sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 56 D-Index — 71st percentile

71% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Research.com Recognitions

  • 2002 - IEEE Fellow For contributions to integrated high-speed and radio-frequency silicon devices and components.

Overview

Joachim N. Burghartz is affiliated with the University of Stuttgart in Germany. Their research primarily focuses on engineering, with a strong emphasis on electrical and electronic engineering.

The main fields of study covered in their work include:

  • Electrical and Electronic Engineering
  • Biomedical Engineering
  • Condensed Matter Physics
  • Bioengineering
  • Materials Chemistry

The topics frequently addressed in their publications span:

  • Thin-Film Transistor Technologies
  • GaN-based semiconductor devices and materials
  • Organic Electronics and Photovoltaics
  • Semiconductor materials and devices
  • Silicon Carbide Semiconductor Technologies
  • CCD and CMOS Imaging Sensors
  • Analytical Chemistry and Sensors

A number of recent papers authored or co-authored by Burghartz include:

  • Flexible low-voltage high-frequency organic thin-film transistors, 2020, Science Advances
  • Low-Power Organic Light Sensor Array Based on Active-Matrix Common-Gate Transimpedance Amplifier on Foil for Imaging Applications, 2020, IEEE Journal of Solid-State Circuits
  • Analysis of an AlGaN/AlN Super-Lattice Buffer Concept for 650-V Low-Dispersion and High-Reliability GaN HEMTs, 2020, IEEE Transactions on Electron Devices
  • Subthreshold Swing of 59 mV decade−1 in Nanoscale Flexible Ultralow-Voltage Organic Transistors, 2022, Advanced Electronic Materials
  • High-gain, low-voltage unipolar logic circuits based on nanoscale flexible organic thin-film transistors with small signal delays, 2023, Science Advances

Frequent co-authors in their work include:

  • R Todi
  • Giovanni Ghione
  • K. Ishimaru
  • M Polavarapu
  • M Radhakrishnan

Burghartz frequently publishes in venues such as:

  • IEEE Transactions on Electron Devices
  • IEEE Electron Devices Magazine
  • IEEE Sensors Journal
  • IEEE Journal of Photovoltaics
  • Advanced Electronic Materials

In 2002, Joachim N. Burghartz was recognized as an IEEE Fellow for contributions to integrated high-speed and radio-frequency silicon devices and components.

Best Publications

  • Method of forming an integrated circuit toroidal inductor

    Burghartz Joachim Norbert;Edelstein Daniel Charles;Jahnes Christopher Vincent;Uzoh Cyprian Emeka

  • 75-GHz f/sub T/ SiGe-base heterojunction bipolar transistors

    G.L. Patton;J.H. Comfort;B.S. Meyerson;E.F. Crabbe

  • On the design of RF spiral inductors on silicon

    J.N. Burghartz;B. Rejaei

  • RF circuit design aspects of spiral inductors on silicon

    J.N. Burghartz;D.C. Edelstein;M. Soyuer;H.A. Ainspan

  • Microwave inductors and capacitors in standard multilevel interconnect silicon technology

    J.N. Burghartz;M. Soyuer;K.A. Jenkins

  • Bridging the gap between optical fibers and silicon photonic integrated circuits.

    Wissem Sfar Zaoui;Andreas Kunze;Wolfgang Vogel;Manfred Berroth

  • Contact Resistance and Megahertz Operation of Aggressively Scaled Organic Transistors

    Frederik Ante;Daniel Kälblein;Tarek Zaki;Ute Zschieschang

  • Small contact resistance and high-frequency operation of flexible low-voltage inverted coplanar organic transistors

    James W. Borchert;James W. Borchert;Boyu Peng;Florian Letzkus;Joachim N. Burghartz

  • Integrated circuit inductor

    Joachim Norbert Burghartz;Daniel Charles Edelstein;Christopher Vincent Jahnes;Cyprian Emeka Uzoh

  • Multilevel-spiral inductors using VLSI interconnect technology

    J.N. Burghartz;K.A. Jenkins;M. Soyuer

  • Substrate effects in monolithic RF transformers on silicon

    K.T. Ng;B. Rejaei;J.N. Burghartz

  • Spiral inductors and transmission lines in silicon technology using copper-damascene interconnects and low-loss substrates

    J.N. Burghartz;D.C. Edelstein;K.A. Jenkiin;Y.H. Kwark

  • Surface-passivated high-resistivity silicon substrates for RFICs

    B. Rong;J.N. Burghartz;L.K. Nanver;B. Rejaei

  • Flexible low-voltage high-frequency organic thin-film transistors.

    James W. Borchert;James W. Borchert;Ute Zschieschang;Florian Letzkus;Michele Giorgio;Michele Giorgio

  • Ultra-thin Chip Technology and Applications

    Joachim Burghartz

  • Spray coating of photoresist for pattern transfer on high topography surfaces

    Nga P Pham;Joachim N Burghartz;Pasqualina M Sarro

  • Integrated RF and microwave components in BiCMOS technology

    J.N. Burghartz;M. Soyuer;K.A. Jenkins

  • Progress in RF inductors on silicon-understanding substrate losses

    J.N. Burghartz

  • Detailed analysis and contact properties of low-voltage organic thin-film transistors based on dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene (DNTT) and its didecyl and diphenyl derivatives

    Ulrike Kraft;Kazuo Takimiya;Myeong Jin Kang;Reinhold Rödel

  • Flexible Low-Voltage Organic Complementary Circuits: Finding the Optimum Combination of Semiconductors and Monolayer Gate Dielectrics

    Ulrike Kraft;Mirsada Sejfić;Myeong Jin Kang;Kazuo Takimiya

  • An integration scheme for rf power harvesting

    H Yan;JG Macias Montero;AB Akhnoukh;Lcn de Vreede

Frequent Co-Authors

Keith A. Jenkins
Keith A. Jenkins IBM (United States)
Hagen Klauk
Hagen Klauk Max Planck Institute for Solid State Research
Ute Zschieschang
Ute Zschieschang Max Planck Institute for Solid State Research
Pasqualina M. Sarro
Pasqualina M. Sarro Delft University of Technology
Bernard S. Meyerson
Bernard S. Meyerson IBM (United States)
David L. Harame
David L. Harame IBM (United States)
John D. Cressler
John D. Cressler Georgia Institute of Technology
Lis K. Nanver
Lis K. Nanver University of Twente
Johannes M. C. Stork
Johannes M. C. Stork ON Semiconductor (United States)
Kazuo Takimiya
Kazuo Takimiya Tohoku University

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