World's Best Scientists 2026 revealed!
Bernard S. Meyerson

Bernard S. Meyerson

D-Index & Metrics

Materials Science

D-Index
66
Citations
15597
World Ranking
5359
National Ranking
1397

Research.com Recognitions

  • 2002 - Member of the National Academy of Engineering For the development of low-temperature epitaxy of SiGe for the fabrication of hetero-junction, bipolar, integrated circuits for telecommunications.
  • 2001 - IEEE Fellow For contributions to ultra high vacuum chemical vapor deposition and its application to low temperature epitaxy of SiGe.
  • 1991 - MRS Medal, Materials Research Society In recognition of his dynamic research leading to the fabrication of high speed heterojunction bipolar transistors.

Overview

What is he best known for?

The fields of study he is best known for:

  • Semiconductor
  • Electrical engineering
  • Silicon

Bernard S. Meyerson spends much of his time researching Chemical vapor deposition, Silicon, Optoelectronics, Heterojunction and Epitaxy. He interconnects Combustion chemical vapor deposition, Deposition and Chemical engineering in the investigation of issues within Chemical vapor deposition. His studies deal with areas such as Thin film and Analytical chemistry as well as Silicon.

His Optoelectronics research includes elements of Semiconductor device and Electrical engineering. His study focuses on the intersection of Heterojunction and fields such as Electron mobility with connections in the field of Germanium, Doping and Electrical resistivity and conductivity. Bernard S. Meyerson has researched Transistor in several fields, including Cutoff frequency and Integrated circuit.

His most cited work include:

  • 75-GHz f/sub T/ SiGe-base heterojunction bipolar transistors (431 citations)
  • Heterojunction bipolar transistors using Si-Ge alloys (397 citations)
  • Si/SiGe epitaxial-base transistors. I. Materials, physics, and circuits (343 citations)

What are the main themes of his work throughout his whole career to date?

Bernard S. Meyerson focuses on Optoelectronics, Silicon, Heterojunction, Electrical engineering and Chemical vapor deposition. His Optoelectronics study incorporates themes from Transistor, Bipolar junction transistor and Epitaxy. His Silicon research is multidisciplinary, relying on both Layer, Substrate, Thin film and Dopant.

His study looks at the relationship between Heterojunction and fields such as Electron mobility, as well as how they intersect with chemical problems. His Electrical engineering study deals with Silicon-germanium intersecting with BiCMOS, Monolithic microwave integrated circuit and Resistor. His Chemical vapor deposition research includes themes of Deposition, Inorganic chemistry, Silane, Chemical engineering and Analytical chemistry.

He most often published in these fields:

  • Optoelectronics (51.35%)
  • Silicon (26.58%)
  • Heterojunction (22.97%)

What were the highlights of his more recent work (between 1996-2008)?

  • Electrical engineering (22.97%)
  • Silicon-germanium (17.12%)
  • Optoelectronics (51.35%)

In recent papers he was focusing on the following fields of study:

Electrical engineering, Silicon-germanium, Optoelectronics, Electronic engineering and Heterojunction bipolar transistor are his primary areas of study. His study looks at the intersection of Electrical engineering and topics like Wireless with Amplifier, Electric breakdown and Interconnection. Silicon-germanium is a subfield of Silicon that he studies.

His Silicon study frequently draws connections to other fields, such as Doping. His Optoelectronics study frequently links to other fields, such as Epitaxy. His Heterojunction bipolar transistor study which covers Inductor that intersects with Resistor.

Between 1996 and 2008, his most popular works were:

  • Foundation of rf CMOS and SiGe BiCMOS technologies (84 citations)
  • Epitaxial and polycrystalline growth of Si1-X-YGEXCY and Si1-YCY alloy layers on Si by UHV-CVD (76 citations)
  • A SiGe HBT BiCMOS technology for mixed signal RF applications (65 citations)

In his most recent research, the most cited papers focused on:

  • Semiconductor
  • Electrical engineering
  • Integrated circuit

Bernard S. Meyerson mostly deals with Electrical engineering, Silicon-germanium, BiCMOS, CMOS and Bipolar junction transistor. Bernard S. Meyerson works mostly in the field of Electrical engineering, limiting it down to concerns involving IBM and, occasionally, Bipolar process and Bicmos technology. As part of his Optoelectronics and Silicon and Silicon-germanium studies, Bernard S. Meyerson is studying Silicon-germanium.

His Optoelectronics study frequently involves adjacent topics like Single crystal. He has included themes like Wireless, Transistor and Dopant in his Silicon study. His study looks at the relationship between Heterojunction bipolar transistor and topics such as Heterojunction, which overlap with Human-body model and Heterostructure-emitter bipolar transistor.

Best Publications

  • Low‐temperature silicon epitaxy by ultrahigh vacuum/chemical vapor deposition

    B. S. Meyerson

  • Si/SiGe epitaxial-base transistors. I. Materials, physics, and circuits

    D.L. Harame;J.H. Comfort;J.D. Cressler;E.F. Crabbe

  • Heterojunction bipolar transistors using Si-Ge alloys

    S.S. Iyer;G.L. Patton;J.M.C. Stork;B.S. Meyerson

  • 75-GHz f/sub T/ SiGe-base heterojunction bipolar transistors

    G.L. Patton;J.H. Comfort;B.S. Meyerson;E.F. Crabbe

  • Cooperative growth phenomena in silicon/germanium low-temperature epitaxy

    Bernard S. Meyerson;Kevin J. Uram;Francoise K. LeGoues

  • Anomalous strain relaxation in SiGe thin films and superlattices.

    F. K. LeGoues;B. S. Meyerson;J. F. Morar

  • Oxidation studies of SiGe

    F. K. LeGoues;R. Rosenberg;T. Nguyen;F. Himpsel

  • Mechanism and conditions for anomalous strain relaxation in graded thin films and superlattices

    F. K. LeGoues;B. S. Meyerson;J. F. Morar;P. D. Kirchner

  • SiGe-channel heterojunction p-MOSFET's

    S. Verdonckt-Vandebroek;E.F. Crabbe;B.S. Meyerson;D.L. Harame

  • Mechanistic Studies of Chemical Vapor Deposition

    J. M. Jasinski;B. S. Meyerson;B. A. Scott

  • Method and apparatus for low temperature, low pressure chemical vapor deposition of epitaxial silicon layers

    Bernard Steele Meyerson

  • Extremely high electron mobility in Si/SiGe modulation‐doped heterostructures

    K. Ismail;M. Arafa;K. L. Saenger;J. O. Chu

  • Bistable conditions for low‐temperature silicon epitaxy

    Bernard S. Meyerson;Franz J. Himpsel;Kevin J. Uram

  • UHV/CVD growth of Si and Si:Ge alloys: chemistry, physics, and device applications

    B.S. Meyerson

  • Si/SiGe epitaxial-base transistors. II. Process integration and analog applications

    D.L. Harame;J.H. Comfort;J.D. Cressler;E.F. Crabbe

  • Kinetics and mechanism of oxidation of SiGe: dry versus wet oxidation

    F. K. LeGoues;R. Rosenberg;B. S. Meyerson

  • Nonequilibrium boron doping effects in low‐temperature epitaxial silicon films

    B. S. Meyerson;F. K. LeGoues;T. N. Nguyen;D. L. Harame

  • High electron mobility in modulation‐doped Si/SiGe

    K. Ismail;B. S. Meyerson;P. J. Wang

  • High hole mobility in SiGe alloys for device applications

    K. Ismail;J. O. Chu;B. S. Meyerson

  • Electron resonant tunneling in Si/SiGe double barrier diodes

    K. Ismail;B. S. Meyerson;P. J. Wang

  • S iGe-Channel Heteroj unc tion p-MOSFET ' s

    Sophie Verdonckt-Vandebroek;Emmanuel F. CrabbC;Bernard S. Meyerson;David L. Harame

Frequent Co-Authors

David L. Harame
David L. Harame IBM (United States)
Johannes M. C. Stork
Johannes M. C. Stork ON Semiconductor (United States)
Vishnubhai Vitthalbhai Patel
Vishnubhai Vitthalbhai Patel IBM (United States)
John D. Cressler
John D. Cressler Georgia Institute of Technology
Alfred Grill
Alfred Grill IBM (United States)
David C. Ahlgren
David C. Ahlgren IBM (United States)
Joachim N. Burghartz
Joachim N. Burghartz University of Stuttgart
Francoise K. LeGoues
Francoise K. LeGoues IBM (United States)
Robert A. Groves
Robert A. Groves IBM (United States)
Gregory G. Freeman
Gregory G. Freeman IBM (United States)

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