World's Best Scientists 2026 revealed!
Bernard S. Meyerson

Bernard S. Meyerson

D-Index & Metrics

Materials Science

D-Index
66
Citations
15597
World Ranking
5357
National Ranking
1395

Bernard S. Meyerson publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Bernard S. Meyerson sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 233 publications — 41st percentile

41% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Bernard S. Meyerson D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Bernard S. Meyerson sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 66 D-Index — 59th percentile

59% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Research.com Recognitions

  • 2002 - Member of the National Academy of Engineering For the development of low-temperature epitaxy of SiGe for the fabrication of hetero-junction, bipolar, integrated circuits for telecommunications.
  • 2001 - IEEE Fellow For contributions to ultra high vacuum chemical vapor deposition and its application to low temperature epitaxy of SiGe.
  • 1991 - MRS Medal, Materials Research Society In recognition of his dynamic research leading to the fabrication of high speed heterojunction bipolar transistors.

Overview

What is he best known for?

The fields of study he is best known for:

  • Semiconductor
  • Electrical engineering
  • Silicon

Bernard S. Meyerson spends much of his time researching Chemical vapor deposition, Silicon, Optoelectronics, Heterojunction and Epitaxy. He interconnects Combustion chemical vapor deposition, Deposition and Chemical engineering in the investigation of issues within Chemical vapor deposition. His studies deal with areas such as Thin film and Analytical chemistry as well as Silicon.

His Optoelectronics research includes elements of Semiconductor device and Electrical engineering. His study focuses on the intersection of Heterojunction and fields such as Electron mobility with connections in the field of Germanium, Doping and Electrical resistivity and conductivity. Bernard S. Meyerson has researched Transistor in several fields, including Cutoff frequency and Integrated circuit.

His most cited work include:

  • 75-GHz f/sub T/ SiGe-base heterojunction bipolar transistors (431 citations)
  • Heterojunction bipolar transistors using Si-Ge alloys (397 citations)
  • Si/SiGe epitaxial-base transistors. I. Materials, physics, and circuits (343 citations)

What are the main themes of his work throughout his whole career to date?

Bernard S. Meyerson focuses on Optoelectronics, Silicon, Heterojunction, Electrical engineering and Chemical vapor deposition. His Optoelectronics study incorporates themes from Transistor, Bipolar junction transistor and Epitaxy. His Silicon research is multidisciplinary, relying on both Layer, Substrate, Thin film and Dopant.

His study looks at the relationship between Heterojunction and fields such as Electron mobility, as well as how they intersect with chemical problems. His Electrical engineering study deals with Silicon-germanium intersecting with BiCMOS, Monolithic microwave integrated circuit and Resistor. His Chemical vapor deposition research includes themes of Deposition, Inorganic chemistry, Silane, Chemical engineering and Analytical chemistry.

He most often published in these fields:

  • Optoelectronics (51.35%)
  • Silicon (26.58%)
  • Heterojunction (22.97%)

What were the highlights of his more recent work (between 1996-2008)?

  • Electrical engineering (22.97%)
  • Silicon-germanium (17.12%)
  • Optoelectronics (51.35%)

In recent papers he was focusing on the following fields of study:

Electrical engineering, Silicon-germanium, Optoelectronics, Electronic engineering and Heterojunction bipolar transistor are his primary areas of study. His study looks at the intersection of Electrical engineering and topics like Wireless with Amplifier, Electric breakdown and Interconnection. Silicon-germanium is a subfield of Silicon that he studies.

His Silicon study frequently draws connections to other fields, such as Doping. His Optoelectronics study frequently links to other fields, such as Epitaxy. His Heterojunction bipolar transistor study which covers Inductor that intersects with Resistor.

Between 1996 and 2008, his most popular works were:

  • Foundation of rf CMOS and SiGe BiCMOS technologies (84 citations)
  • Epitaxial and polycrystalline growth of Si1-X-YGEXCY and Si1-YCY alloy layers on Si by UHV-CVD (76 citations)
  • A SiGe HBT BiCMOS technology for mixed signal RF applications (65 citations)

In his most recent research, the most cited papers focused on:

  • Semiconductor
  • Electrical engineering
  • Integrated circuit

Bernard S. Meyerson mostly deals with Electrical engineering, Silicon-germanium, BiCMOS, CMOS and Bipolar junction transistor. Bernard S. Meyerson works mostly in the field of Electrical engineering, limiting it down to concerns involving IBM and, occasionally, Bipolar process and Bicmos technology. As part of his Optoelectronics and Silicon and Silicon-germanium studies, Bernard S. Meyerson is studying Silicon-germanium.

His Optoelectronics study frequently involves adjacent topics like Single crystal. He has included themes like Wireless, Transistor and Dopant in his Silicon study. His study looks at the relationship between Heterojunction bipolar transistor and topics such as Heterojunction, which overlap with Human-body model and Heterostructure-emitter bipolar transistor.

Best Publications

  • Low‐temperature silicon epitaxy by ultrahigh vacuum/chemical vapor deposition

    B. S. Meyerson

  • Si/SiGe epitaxial-base transistors. I. Materials, physics, and circuits

    D.L. Harame;J.H. Comfort;J.D. Cressler;E.F. Crabbe

  • Heterojunction bipolar transistors using Si-Ge alloys

    S.S. Iyer;G.L. Patton;J.M.C. Stork;B.S. Meyerson

  • 75-GHz f/sub T/ SiGe-base heterojunction bipolar transistors

    G.L. Patton;J.H. Comfort;B.S. Meyerson;E.F. Crabbe

  • Cooperative growth phenomena in silicon/germanium low-temperature epitaxy

    Bernard S. Meyerson;Kevin J. Uram;Francoise K. LeGoues

  • Anomalous strain relaxation in SiGe thin films and superlattices.

    F. K. LeGoues;B. S. Meyerson;J. F. Morar

  • Oxidation studies of SiGe

    F. K. LeGoues;R. Rosenberg;T. Nguyen;F. Himpsel

  • Mechanism and conditions for anomalous strain relaxation in graded thin films and superlattices

    F. K. LeGoues;B. S. Meyerson;J. F. Morar;P. D. Kirchner

  • SiGe-channel heterojunction p-MOSFET's

    S. Verdonckt-Vandebroek;E.F. Crabbe;B.S. Meyerson;D.L. Harame

  • Mechanistic Studies of Chemical Vapor Deposition

    J. M. Jasinski;B. S. Meyerson;B. A. Scott

  • Method and apparatus for low temperature, low pressure chemical vapor deposition of epitaxial silicon layers

    Bernard Steele Meyerson

  • Extremely high electron mobility in Si/SiGe modulation‐doped heterostructures

    K. Ismail;M. Arafa;K. L. Saenger;J. O. Chu

  • Bistable conditions for low‐temperature silicon epitaxy

    Bernard S. Meyerson;Franz J. Himpsel;Kevin J. Uram

  • UHV/CVD growth of Si and Si:Ge alloys: chemistry, physics, and device applications

    B.S. Meyerson

  • Si/SiGe epitaxial-base transistors. II. Process integration and analog applications

    D.L. Harame;J.H. Comfort;J.D. Cressler;E.F. Crabbe

  • Kinetics and mechanism of oxidation of SiGe: dry versus wet oxidation

    F. K. LeGoues;R. Rosenberg;B. S. Meyerson

  • Nonequilibrium boron doping effects in low‐temperature epitaxial silicon films

    B. S. Meyerson;F. K. LeGoues;T. N. Nguyen;D. L. Harame

  • High electron mobility in modulation‐doped Si/SiGe

    K. Ismail;B. S. Meyerson;P. J. Wang

  • High hole mobility in SiGe alloys for device applications

    K. Ismail;J. O. Chu;B. S. Meyerson

  • Electron resonant tunneling in Si/SiGe double barrier diodes

    K. Ismail;B. S. Meyerson;P. J. Wang

  • S iGe-Channel Heteroj unc tion p-MOSFET ' s

    Sophie Verdonckt-Vandebroek;Emmanuel F. CrabbC;Bernard S. Meyerson;David L. Harame

Frequent Co-Authors

David L. Harame
David L. Harame IBM (United States)
Johannes M. C. Stork
Johannes M. C. Stork ON Semiconductor (United States)
Vishnubhai Vitthalbhai Patel
Vishnubhai Vitthalbhai Patel IBM (United States)
John D. Cressler
John D. Cressler Georgia Institute of Technology
Alfred Grill
Alfred Grill IBM (United States)
David C. Ahlgren
David C. Ahlgren IBM (United States)
Joachim N. Burghartz
Joachim N. Burghartz University of Stuttgart
Francoise K. LeGoues
Francoise K. LeGoues IBM (United States)
Robert A. Groves
Robert A. Groves IBM (United States)
Gregory G. Freeman
Gregory G. Freeman IBM (United States)

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