David C. Ahlgren mostly deals with Heterojunction bipolar transistor, Electrical engineering, Optoelectronics, Bipolar junction transistor and Electronic engineering. David C. Ahlgren works mostly in the field of Heterojunction bipolar transistor, limiting it down to topics relating to Terahertz radiation and, in certain cases, Frequency divider, Multiplexer, Ring oscillator and Integrated circuit, as a part of the same area of interest. His Electrical engineering research focuses on CMOS and Wafer.
His CMOS research integrates issues from BiCMOS and Silicon-germanium. As a member of one scientific family, David C. Ahlgren mostly works in the field of Optoelectronics, focusing on Transistor and, on occasion, AND gate. His studies deal with areas such as Wireless and Design for manufacturability as well as Electronic engineering.
David C. Ahlgren mainly focuses on Optoelectronics, Heterojunction bipolar transistor, Electrical engineering, Bipolar junction transistor and Silicon-germanium. In his research on the topic of Optoelectronics, Dram is strongly related with Transistor. His research in Heterojunction bipolar transistor intersects with topics in Bicmos technology, Electronic engineering, Breakdown voltage and Reliability.
His study connects Wireless and Electrical engineering. His Bipolar junction transistor research incorporates themes from Layer, Epitaxy, Cutoff frequency and Heterojunction. David C. Ahlgren focuses mostly in the field of Silicon-germanium, narrowing it down to matters related to Noise and, in some cases, Radio frequency.
David C. Ahlgren mostly deals with Optoelectronics, Heterojunction bipolar transistor, CMOS, Electrical engineering and Electronic engineering. His Optoelectronics research is multidisciplinary, incorporating perspectives in Transistor and Miniaturization. His Heterojunction bipolar transistor study combines topics from a wide range of disciplines, such as Breakdown voltage, Bicmos technology, Silicon-germanium, Terahertz radiation and Extremely high frequency.
His Breakdown voltage study incorporates themes from Electric breakdown, Heterojunction and Bipolar junction transistor. As part of the same scientific family, he usually focuses on CMOS, concentrating on Current and intersecting with Doping. In general Electronic engineering, his work in Common emitter and Device simulation is often linked to Base and Vertical scaling linking many areas of study.
Optoelectronics, Heterojunction bipolar transistor, Terahertz radiation, Breakdown voltage and Back end of line are his primary areas of study. His Optoelectronics research incorporates elements of Electrical engineering and Noise figure. In the subject of general Electrical engineering, his work in MOSFET and Voltage is often linked to Node and Electric field, thereby combining diverse domains of study.
His Noise figure research is multidisciplinary, incorporating elements of Operating temperature, Transistor, Miniaturization and Silicon-germanium. The concepts of his Breakdown voltage study are interwoven with issues in Cutoff frequency, Electric breakdown, Frequency response and Cryogenic temperature. His Back end of line study combines topics in areas such as Schottky diode, Diode, Bicmos technology and Bicmos integrated circuits.
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Self-aligned SiGe NPN transistors with 285 GHz f/sub MAX/ and 207 GHz f/sub T/ in a manufacturable technology
B. Jagannathan;M. Khater;F. Pagette;J.-S. Rieh.
IEEE Electron Device Letters (2002)
SiGe HBTs with cut-off frequency of 350 GHz
J.-S. Rieh;B. Jagannathan;H. Chen;K.T. Schonenberg.
international electron devices meeting (2002)
Current status and future trends of SiGe BiCMOS technology
D.L. Harame;D.C. Ahlgren;D.D. Coolbaugh;J.S. Dunn.
IEEE Transactions on Electron Devices (2001)
Semiconductor producing method and equipment
Natzl Weisli C;Arglun David C;Babi Steven G.
A 0.18 /spl mu/m BiCMOS technology featuring 120/100 GHz (f/sub T//f/sub max/) HBT and ASIC-compatible CMOS using copper interconnect
A. Joseph;D. Coolbaugh;M. Zierak;R. Wuthrich.
bipolar/bicmos circuits and technology meeting (2001)
Half-terahertz operation of SiGe HBTs
R. Krithivasan;Yuan Lu;J.D. Cressler;Jae-Sung Rieh.
IEEE Electron Device Letters (2006)
A 210-GHz f/sub T/ SiGe HBT with a non-self-aligned structure
S.J. Jeng;B. Jagannathan;J.-S. Rieh;J. Johnson.
IEEE Electron Device Letters (2001)
Status and Direction of Communication Technologies - SiGe BiCMOS and RFCMOS
A.J. Joseph;D.L. Harame;B. Jagannathan;D. Coolbaugh.
Proceedings of the IEEE (2005)
Foundation of rf CMOS and SiGe BiCMOS technologies
J. S. Dunn;D. C. Ahlgren;D. Coolbaugh;N. B. Feilchenfeld.
Ibm Journal of Research and Development (2003)
SiGe HBT technology with f/sub max//f/sub T/=350/300 GHz and gate delay below 3.3 ps
M. Khater;J.-S. Rieh;T. Adam;A. Chinthakindi.
international electron devices meeting (2004)
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