What is he best known for?
The fields of study he is best known for:
- Electrical engineering
- Semiconductor
- Transistor
David C. Ahlgren mostly deals with Heterojunction bipolar transistor, Electrical engineering, Optoelectronics, Bipolar junction transistor and Electronic engineering.
David C. Ahlgren works mostly in the field of Heterojunction bipolar transistor, limiting it down to topics relating to Terahertz radiation and, in certain cases, Frequency divider, Multiplexer, Ring oscillator and Integrated circuit, as a part of the same area of interest.
His Electrical engineering research focuses on CMOS and Wafer.
His CMOS research integrates issues from BiCMOS and Silicon-germanium.
As a member of one scientific family, David C. Ahlgren mostly works in the field of Optoelectronics, focusing on Transistor and, on occasion, AND gate.
His studies deal with areas such as Wireless and Design for manufacturability as well as Electronic engineering.
His most cited work include:
- Self-aligned SiGe NPN transistors with 285 GHz f/sub MAX/ and 207 GHz f/sub T/ in a manufacturable technology (249 citations)
- SiGe HBTs with cut-off frequency of 350 GHz (167 citations)
- Current status and future trends of SiGe BiCMOS technology (148 citations)
What are the main themes of his work throughout his whole career to date?
David C. Ahlgren mainly focuses on Optoelectronics, Heterojunction bipolar transistor, Electrical engineering, Bipolar junction transistor and Silicon-germanium.
In his research on the topic of Optoelectronics, Dram is strongly related with Transistor.
His research in Heterojunction bipolar transistor intersects with topics in Bicmos technology, Electronic engineering, Breakdown voltage and Reliability.
His study connects Wireless and Electrical engineering.
His Bipolar junction transistor research incorporates themes from Layer, Epitaxy, Cutoff frequency and Heterojunction.
David C. Ahlgren focuses mostly in the field of Silicon-germanium, narrowing it down to matters related to Noise and, in some cases, Radio frequency.
He most often published in these fields:
- Optoelectronics (67.96%)
- Heterojunction bipolar transistor (51.46%)
- Electrical engineering (43.69%)
What were the highlights of his more recent work (between 2005-2009)?
- Optoelectronics (67.96%)
- Heterojunction bipolar transistor (51.46%)
- CMOS (25.24%)
In recent papers he was focusing on the following fields of study:
David C. Ahlgren mostly deals with Optoelectronics, Heterojunction bipolar transistor, CMOS, Electrical engineering and Electronic engineering.
His Optoelectronics research is multidisciplinary, incorporating perspectives in Transistor and Miniaturization.
His Heterojunction bipolar transistor study combines topics from a wide range of disciplines, such as Breakdown voltage, Bicmos technology, Silicon-germanium, Terahertz radiation and Extremely high frequency.
His Breakdown voltage study incorporates themes from Electric breakdown, Heterojunction and Bipolar junction transistor.
As part of the same scientific family, he usually focuses on CMOS, concentrating on Current and intersecting with Doping.
In general Electronic engineering, his work in Common emitter and Device simulation is often linked to Base and Vertical scaling linking many areas of study.
Between 2005 and 2009, his most popular works were:
- Half-terahertz operation of SiGe HBTs (92 citations)
- On the Performance Limits of Cryogenically Operated SiGe HBTs and Its Relation to Scaling for Terahertz Speeds (42 citations)
- Gate-Induced-Drain-Leakage Current in 45-nm CMOS Technology (30 citations)
In his most recent research, the most cited papers focused on:
- Semiconductor
- Electrical engineering
- Integrated circuit
Optoelectronics, Heterojunction bipolar transistor, Terahertz radiation, Breakdown voltage and Back end of line are his primary areas of study.
His Optoelectronics research incorporates elements of Electrical engineering and Noise figure.
In the subject of general Electrical engineering, his work in MOSFET and Voltage is often linked to Node and Electric field, thereby combining diverse domains of study.
His Noise figure research is multidisciplinary, incorporating elements of Operating temperature, Transistor, Miniaturization and Silicon-germanium.
The concepts of his Breakdown voltage study are interwoven with issues in Cutoff frequency, Electric breakdown, Frequency response and Cryogenic temperature.
His Back end of line study combines topics in areas such as Schottky diode, Diode, Bicmos technology and Bicmos integrated circuits.
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