World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
44
Citations
7768
World Ranking
3739
National Ranking
1349

Overview

Paul W. Marshall is affiliated with the United States Naval Research Laboratory in the United States. Their research spans multiple areas within health professions and psychology, with a focus on mental health and patient involvement, digital mental health interventions, schizophrenia research and treatment, suicide and self-harm studies, social media in health education, health policy implementation science, and mental health treatment and access.

The main fields of study for Paul W. Marshall are Health Professions and Psychology. Within these, the subfields include General Health Professions, Psychiatry and Mental Health, Clinical Psychology, Applied Psychology, and Social Psychology.

Paul W. Marshall has published numerous papers in diverse academic journals. Recent publications include:

  • Understanding the Impacts of Online Mental Health Peer Support Forums: Realist Synthesis, 2024, JMIR Mental Health
  • Caring for a friend or family member who has experienced suicidal behaviour: A systematic review and qualitative synthesis, 2023, Psychology and Psychotherapy Theory Research and Practice
  • Improving Peer Online Forums (iPOF): protocol for a realist evaluation of peer online mental health forums to inform practice and policy, 2023, BMJ Open
  • The interplay between suicidal experiences, psychotic experiences and interpersonal relationships: a qualitative study, 2023, BMC Psychiatry
  • Personal recovery in bipolar disorder: Systematic review and "best fit" framework synthesis of qualitative evidence - a POETIC adaptation of CHIME, 2021, Journal of Affective Disorders

Paul W. Marshall frequently publishes in several venues, including:

  • JMIR Mental Health
  • BMJ Open
  • International Journal of Environmental Research and Public Health
  • bioRxiv (Cold Spring Harbor Laboratory)
  • Journal of Affective Disorders

Collaborations have been a consistent part of their work. Notable frequent coauthors include Fiona Lobban, Steven Jones, Zoe Glossop, Heather Robinson, and Karen Machin.

Best Publications

  • Review of displacement damage effects in silicon devices

    J.R. Srour;C.J. Marshall;P.W. Marshall

  • Correlation of Particle-Induced Displacement Damage in Silicon

    G. P. Summers;E. A. Burke;C. J. Dale;E. A. Wolicki

  • Single-Event Upsets and Multiple-Bit Upsets on a 45 nm SOI SRAM

    D.F. Heidel;P.W. Marshall;J.A. Pellish;K.P. Rodbell

  • Low Energy Proton Single-Event-Upset Test Results on 65 nm SOI SRAM

    D.F. Heidel;P.W. Marshall;K.A. LaBel;J.R. Schwank

  • Heavy ion and proton-induced single event multiple upset

    R.A. Reed;M.A. Carts;P.W. Marshall;C.J. Marshall

  • Multiple-Bit Upset in 130 nm CMOS Technology

    A.D. Tipton;J.A. Pellish;R.A. Reed;R.D. Schrimpf

  • Single event effects in circuit-hardened SiGe HBT logic at gigabit per second data rates

    P.W. Marshall;M.A. Carts;A. Campbell;D. McMorrow

  • Autonomous bit error rate testing at multi-gbit/s rates implemented in a 5AM SiGe circuit for radiation effects self test (CREST)

    P. Marshall;M. Carts;S. Currie;R. Reed

  • High energy electron induced displacement damage in silicon

    Unknown

  • A comparison of Monte Carlo and analytic treatments of displacement damage in Si microvolumes

    C.J. Dale;L. Chen;P.J. McNulty;P.W. Marshall

  • Single-event effects ground testing and on-orbit rate prediction methods: the past, present, and future

    R.A. Reed;J. Kinnison;J.C. Pickel;S. Buchner

  • Displacement damage in GaAs structures

    Unknown

  • Evidence for angular effects in proton-induced single-event upsets

    R.A. Reed;P.W. Marshall;H.S. Kim;P.J. McNulty

  • An investigation of the origins of the variable proton tolerance in multiple SiGe HBT BiCMOS technology generations

    J.D. Cressler;R. Krithivasan;Gang Zhang;Guofu Niu

  • The Contribution of Low-Energy Protons to the Total On-Orbit SEU Rate

    N. A. Dodds;M. J. Martinez;P. E. Dodd;M. R. Shaneyfelt

  • Heavy-ion broad-beam and microprobe studies of single-event upsets in 0.20-/spl mu/m SiGe heterojunction bipolar transistors and circuits

    R.A. Reed;P.W. Marshall;J.C. Pickel;M.A. Carts

  • Displacement damage extremes in silicon depletion regions

    Unknown

  • Single Event Upset cross sections at various data rates

    R.A. Reed;M.A. Carts;P.W. Marshall;C.J. Marshall

  • Emerging optocoupler issues with energetic particle-induced transients and permanent radiation degradation

    R.A. Reed;P.W. Marshall;A.H. Johnston;J.L. Barth

  • Current single event effects and radiation damage results for candidate spacecraft electronics

    M.V. O'Bryan;K.A. LaBel;R.L. Ladbury;C. Poivey

  • An SEU hardening approach for high-speed SiGe HBT digital logic

    R. Krithivasan;G. Niu;J.D. Cressler;S.M. Currie

  • An Evaluation of Transistor-Layout RHBD Techniques for SEE Mitigation in SiGe HBTs

    A.K. Sutton;M. Bellini;J.D. Cressler;J.A. Pellish

  • Energy dependence of proton damage in AlGaAs light-emitting diodes

    R.A. Reed;P.W. Marshall;C.J. Marshall;R.L. Ladbury

Frequent Co-Authors

Robert A. Reed
Robert A. Reed Vanderbilt University
John D. Cressler
John D. Cressler Georgia Institute of Technology
Guofu Niu
Guofu Niu Auburn University
Ronald D. Schrimpf
Ronald D. Schrimpf Vanderbilt University
Paul E. Dodd
Paul E. Dodd Sandia National Laboratories
Dale McMorrow
Dale McMorrow United States Naval Research Laboratory
Alvin J. Joseph
Alvin J. Joseph GlobalFoundries (United States)
Marty R. Shaneyfelt
Marty R. Shaneyfelt Sandia National Laboratories
S. P. Buchner
S. P. Buchner United States Naval Research Laboratory
J.R. Schwank
J.R. Schwank Sandia National Laboratories

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