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D-Index & Metrics

Electronics and Electrical Engineering

D-Index
44
Citations
7353
World Ranking
3754
National Ranking
1355

S. P. Buchner publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where S. P. Buchner sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 256 publications — 46th percentile

46% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

S. P. Buchner D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where S. P. Buchner sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 44 D-Index — 47th percentile

47% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

S. P. Buchner is affiliated with the United States Naval Research Laboratory in the United States. Their research primarily focuses on engineering, with specific contributions in the fields of electrical and electronic engineering as well as computational mechanics.

The scientist's work addresses several main topics, including:

  • Radiation Effects in Electronics
  • Integrated Circuits and Semiconductor Failure Analysis
  • Ion-surface interactions and analysis

S. P. Buchner has contributed to scholarly publications such as:

  • Simulation of Pulsed-Laser-Induced Testing in Microelectronic Devices, 2021, IEEE Transactions on Nuclear Science

Frequent coauthors collaborating with Buchner include:

  • Landen D. Ryder
  • Kaitlyn L. Ryder
  • Andrew L. Sternberg
  • John A. Kozub
  • Ani Khachatrian

The primary venue for publication has been the IEEE Transactions on Nuclear Science. Their research outputs have engaged with topics relevant to radiation effects and failure analysis in semiconductor devices, particularly using computational and experimental approaches.

Best Publications

  • Critical evaluation of the pulsed laser method for single event effects testing and fundamental studies

    J.S. Melinger;S. Buchner;D. McMorrow;W.J. Stapor

  • Comparison of error rates in combinational and sequential logic

    S. Buchner;M. Baze;D. Brown;D. McMorrow

  • Subbandgap laser-induced single event effects: carrier generation via two-photon absorption

    D. McMorrow;W.T. Lotshaw;J.S. Melinger;S. Buchner

  • Application of a pulsed laser for evaluation and optimization of SEU-hard designs [CMOS]

    D. McMorrow;J.S. Melinger;S. Buchner;T. Scott

  • Pulsed-Laser Testing for Single-Event Effects Investigations

    S. P. Buchner;F. Miller;V. Pouget;D. P. McMorrow

  • A digital CMOS design technique for SEU hardening

    M.P. Baze;S.P. Buchner;D. McMorrow

  • Heavy ion and proton-induced single event multiple upset

    R.A. Reed;M.A. Carts;P.W. Marshall;C.J. Marshall

  • Three-dimensional mapping of single-event effects using two photon absorption

    D. McMorrow;W.T. Lotshaw;J.S. Melinger;S. Buchner

  • Single event effects in circuit-hardened SiGe HBT logic at gigabit per second data rates

    P.W. Marshall;M.A. Carts;A. Campbell;D. McMorrow

  • Fault Simulation and Emulation Tools to Augment Radiation-Hardness Assurance Testing

    H. M. Quinn;D. A. Black;W. H. Robinson;S. P. Buchner

  • Laboratory tests for single-event effects

    S. Buchner;D. McMorrow;J. Melinger;A.B. Camdbell

  • Pulsed laser-induced single event upset and charge collection measurements as a function of optical penetration depth

    Joseph S. Melinger;Dale McMorrow;A. B. Campbell;Stephen Buchner

  • Analysis of multiple bit upsets (MBU) in CMOS SRAM

    O. Musseau;F. Gardic;P. Roche;T. Corbiere

  • Demonstration of single-event effects induced by through-wafer two-photon absorption

    D. McMorrow;S. Buchner;W.T. Lotshaw;J.S. Melinger

  • Single-event effects ground testing and on-orbit rate prediction methods: the past, present, and future

    R.A. Reed;J. Kinnison;J.C. Pickel;S. Buchner

  • Single-Event Transients in Bipolar Linear Integrated Circuits

    S. Buchner;D. McMorrow

  • The effects of radiation on MEMS accelerometers

    A.R. Knudson;S. Buchner;P. McDonald;W.J. Stapor

  • Evidence for angular effects in proton-induced single-event upsets

    R.A. Reed;P.W. Marshall;H.S. Kim;P.J. McNulty

  • Theoretical Investigation of an Equivalent Laser LET

    Vincent Pouget;Hervé Lapuyade;Pascal Fouillat;Dean Lewis

  • Single Event Upset cross sections at various data rates

    R.A. Reed;M.A. Carts;P.W. Marshall;C.J. Marshall

Frequent Co-Authors

Dale McMorrow
Dale McMorrow United States Naval Research Laboratory
Lloyd W. Massengill
Lloyd W. Massengill Vanderbilt University
Robert A. Reed
Robert A. Reed Vanderbilt University
R.L. Pease
R.L. Pease Independent Scientist / Consultant, US
Paul W. Marshall
Paul W. Marshall United States Naval Research Laboratory
Ronald D. Schrimpf
Ronald D. Schrimpf Vanderbilt University
Andrew L. Sternberg
Andrew L. Sternberg Vanderbilt University
John D. Cressler
John D. Cressler Georgia Institute of Technology
Karl D. Hobart
Karl D. Hobart United States Naval Research Laboratory
Robert A. Weller
Robert A. Weller Woods Hole Oceanographic Institution

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