2007 - IEEE Fellow For contributions to radiation response of microelectronic devices, circuits, and systems
Optoelectronics, Bipolar junction transistor, Transistor, Electronic engineering and Oxide are his primary areas of study. His biological study spans a wide range of topics, including Two-photon absorption and Absorption. His study in Bipolar junction transistor is interdisciplinary in nature, drawing from both Ionizing radiation, Radiation, Molecular physics and Analytical chemistry.
The study incorporates disciplines such as Electronic circuit, Dosimetry, Common emitter and Current in addition to Transistor. His Electronic engineering study incorporates themes from Stress, Linear circuit and MOSFET. His work carried out in the field of Linear circuit brings together such families of science as Absorbed dose and Hydrogen molecule.
His primary areas of investigation include Optoelectronics, Bipolar junction transistor, Electronic engineering, Transistor and Oxide. The various areas that he examines in his Optoelectronics study include Radiation hardening and Ionizing radiation. As a part of the same scientific family, he mostly works in the field of Ionizing radiation, focusing on Current and, on occasion, Depletion region.
His research integrates issues of Molecular physics, Radiation, Common emitter and Analytical chemistry in his study of Bipolar junction transistor. His research in Electronic engineering intersects with topics in Stress, Comparator, Hydrogen molecule, Linear circuit and Voltage regulator. His Transistor research incorporates themes from Electronic circuit, Ionization and Absorbed dose.
R.L. Pease focuses on Optoelectronics, Bipolar junction transistor, Electronic engineering, Absorbed dose and Transistor. His work on Silicon as part of general Optoelectronics study is frequently linked to Annealing, therefore connecting diverse disciplines of science. He interconnects Ionizing radiation, Molecular physics, Radiation and Analytical chemistry in the investigation of issues within Bipolar junction transistor.
His studies deal with areas such as Radiation hardening and Hydrogen molecule as well as Electronic engineering. His Absorbed dose study also includes fields such as
His main research concerns Bipolar junction transistor, Absorbed dose, Optoelectronics, Transistor and Electronic engineering. His Bipolar junction transistor research is multidisciplinary, relying on both Molecular physics, Radiation, Electron capture and Atomic physics. His Optoelectronics research incorporates themes from Radiochemistry, Transducer and Dosimetry.
His Transistor research is multidisciplinary, relying on both Electronic circuit and Linear circuit. His Linear circuit study incorporates themes from Amplitude, Ionizing radiation and Operational amplifier. In his research on the topic of Electronic engineering, Analytical chemistry and Radiation induced is strongly related with Hydrogen molecule.
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Response of advanced bipolar processes to ionizing radiation
E.W. Enlow;R.L. Pease;W. Combs;R.D. Schrimpf.
IEEE Transactions on Nuclear Science (1991)
Response of advanced bipolar processes to ionizing radiation
E.W. Enlow;R.L. Pease;W. Combs;R.D. Schrimpf.
IEEE Transactions on Nuclear Science (1991)
Physical mechanisms contributing to enhanced bipolar gain degradation at low dose rates
D.M. Fleetwood;S.L. Kosier;R.N. Nowlin;R.D. Schrimpf.
IEEE Transactions on Nuclear Science (1994)
Physical mechanisms contributing to enhanced bipolar gain degradation at low dose rates
D.M. Fleetwood;S.L. Kosier;R.N. Nowlin;R.D. Schrimpf.
IEEE Transactions on Nuclear Science (1994)
Subbandgap laser-induced single event effects: carrier generation via two-photon absorption
D. McMorrow;W.T. Lotshaw;J.S. Melinger;S. Buchner.
IEEE Transactions on Nuclear Science (2002)
Subbandgap laser-induced single event effects: carrier generation via two-photon absorption
D. McMorrow;W.T. Lotshaw;J.S. Melinger;S. Buchner.
IEEE Transactions on Nuclear Science (2002)
Charge separation for bipolar transistors
S.L. Kosier;R.D. Shrimpf;R.N. Nowlin;D.M. Fleetwood.
IEEE Transactions on Nuclear Science (1993)
Charge separation for bipolar transistors
S.L. Kosier;R.D. Shrimpf;R.N. Nowlin;D.M. Fleetwood.
IEEE Transactions on Nuclear Science (1993)
ELDRS in Bipolar Linear Circuits: A Review
R.L. Pease;R.D. Schrimpf;D.M. Fleetwood.
european conference on radiation and its effects on components and systems (2008)
ELDRS in Bipolar Linear Circuits: A Review
R.L. Pease;R.D. Schrimpf;D.M. Fleetwood.
european conference on radiation and its effects on components and systems (2008)
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