World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
51
Citations
7350
World Ranking
2726
National Ranking
1034

Research.com Recognitions

  • 2007 - IEEE Fellow For contributions to radiation response of microelectronic devices, circuits, and systems

Overview

R.L. Pease is an independent scientist and consultant based in the United States. The focus of their work centers around the radiation response of microelectronic devices, circuits, and systems.

Pease has been recognized by professional organizations, notably receiving the IEEE Fellow award in 2007 for contributions in their area of expertise related to microelectronics and radiation effects.

As a researcher, Pease has not published recent papers listed in the available data, and there are no frequent co-authors or publication venues documented. Likewise, no book publications, specific fields of study, subfields, or main topics of work are itemized in the source information.

The affiliation as an independent consultant indicates a career path that may involve applied research, advisory roles, or project-based collaborations in their technical area, though specific collaborations or institutions are not detailed.

Best Publications

  • Response of advanced bipolar processes to ionizing radiation

    E.W. Enlow;R.L. Pease;W. Combs;R.D. Schrimpf

  • Physical mechanisms contributing to enhanced bipolar gain degradation at low dose rates

    D.M. Fleetwood;S.L. Kosier;R.N. Nowlin;R.D. Schrimpf

  • Subbandgap laser-induced single event effects: carrier generation via two-photon absorption

    D. McMorrow;W.T. Lotshaw;J.S. Melinger;S. Buchner

  • Charge separation for bipolar transistors

    S.L. Kosier;R.D. Shrimpf;R.N. Nowlin;D.M. Fleetwood

  • ELDRS in Bipolar Linear Circuits: A Review

    R.L. Pease;R.D. Schrimpf;D.M. Fleetwood

  • Trends in the total-dose response of modern bipolar transistors

    S.L. Kosier;W.E. Combs;A. Wei;R.A. Schrimpf

  • Hardness assurance testing of bipolar junction transistors at elevated irradiation temperatures

    S.C. Witczak;R.D. Schrimpf;D.M. Fleetwood;K.F. Galloway

  • Mechanisms for radiation dose-rate sensitivity of bipolar transistors

    H.P. Hjalmarson;R.L. Pease;S.C. Witczak;M.R. Shaneyfelt

  • Comparison of ionizing-radiation-induced gain degradation in lateral, substrate, and vertical PNP BJTs

    D.M. Schmidt;D.M. Fleetwood;R.D. Schrimpf;R.L. Pease

  • Modeling ionizing radiation induced gain degradation of the lateral PNP bipolar junction transistor

    D.M. Schmidt;A. Wu;R.D. Schrimpf;D.M. Fleetwood

  • Gain degradation of lateral and substrate pnp bipolar junction transistors

    S.C. Witczak;R.D. Schrimpf;K.F. Galloway;D.M. Fleetwood

  • Physically based comparison of hot-carrier-induced and ionizing-radiation-induced degradation in BJTs

    S.L. Kosier;A. Wei;R.D. Schrimpf;D.M. Fleetwood

  • Three-dimensional mapping of single-event effects using two photon absorption

    D. McMorrow;W.T. Lotshaw;J.S. Melinger;S. Buchner

  • A proposed hardness assurance test methodology for bipolar linear circuits and devices in a space ionizing radiation environment

    R.L. Pease;L.M. Cohn;D.M. Fleetwood;M.A. Gehlhausen

  • Hardness-assurance and testing issues for bipolar/BiCMOS devices

    R.N. Nowlin;D.M. Fleetwood;R.D. Schrimpf;R.L. Pease

  • Impact of oxide thickness on SEGR failure in vertical power MOSFETs; development of a semi-empirical expression

    J.L. Titus;C.F. Wheatley;D.I. Burton;I. Mouret

  • Mechanisms of Enhanced Radiation-Induced Degradation Due to Excess Molecular Hydrogen in Bipolar Oxides

    X.J. Chen;H.J. Barnaby;B. Vermeire;K. Holbert

  • Analytical model for proton radiation effects in bipolar devices

    H.J. Barnaby;S.K. Smith;R.D. Schrimpf;D.M. Fleetwood

  • Thermal-stress effects and enhanced low dose rate sensitivity in linear bipolar ICs

    M.R. Shaneyfelt;J.R. Schwank;S.C. Witczak;D.M. Fleetwood

  • ACCELERATED TESTS FOR SIMULATING LOW DOSE RATE GAIN DEGRADATION OF LATERAL AND SUBSTRATE PNP BIPOLAR JUNCTION TRANSISTORS

    S C. Witczak;R D. Schrimpf;K F. Galloway;D M. Fleetwood

Frequent Co-Authors

Ronald D. Schrimpf
Ronald D. Schrimpf Vanderbilt University
Daniel M. Fleetwood
Daniel M. Fleetwood Vanderbilt University
Hugh J. Barnaby
Hugh J. Barnaby Arizona State University
Marty R. Shaneyfelt
Marty R. Shaneyfelt Sandia National Laboratories
S. P. Buchner
S. P. Buchner United States Naval Research Laboratory
J.R. Schwank
J.R. Schwank Sandia National Laboratories
Dale McMorrow
Dale McMorrow United States Naval Research Laboratory
Kenneth F. Galloway
Kenneth F. Galloway Vanderbilt University
Lloyd W. Massengill
Lloyd W. Massengill Vanderbilt University
Sokrates T. Pantelides
Sokrates T. Pantelides Vanderbilt University

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Related Online Degrees & Career Pathways

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Best Scientists Citing R.L. Pease