D-Index & Metrics Best Publications

D-Index & Metrics D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines.

Discipline name D-index D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines. Citations Publications World Ranking National Ranking
Electronics and Electrical Engineering D-index 47 Citations 6,158 111 World Ranking 2029 National Ranking 863

Research.com Recognitions

Awards & Achievements

2007 - IEEE Fellow For contributions to radiation response of microelectronic devices, circuits, and systems

Overview

What is he best known for?

The fields of study he is best known for:

  • Transistor
  • Electrical engineering
  • Integrated circuit

Optoelectronics, Bipolar junction transistor, Transistor, Electronic engineering and Oxide are his primary areas of study. His biological study spans a wide range of topics, including Two-photon absorption and Absorption. His study in Bipolar junction transistor is interdisciplinary in nature, drawing from both Ionizing radiation, Radiation, Molecular physics and Analytical chemistry.

The study incorporates disciplines such as Electronic circuit, Dosimetry, Common emitter and Current in addition to Transistor. His Electronic engineering study incorporates themes from Stress, Linear circuit and MOSFET. His work carried out in the field of Linear circuit brings together such families of science as Absorbed dose and Hydrogen molecule.

His most cited work include:

  • Response of advanced bipolar processes to ionizing radiation (261 citations)
  • Physical mechanisms contributing to enhanced bipolar gain degradation at low dose rates (231 citations)
  • Subbandgap laser-induced single event effects: carrier generation via two-photon absorption (206 citations)

What are the main themes of his work throughout his whole career to date?

His primary areas of investigation include Optoelectronics, Bipolar junction transistor, Electronic engineering, Transistor and Oxide. The various areas that he examines in his Optoelectronics study include Radiation hardening and Ionizing radiation. As a part of the same scientific family, he mostly works in the field of Ionizing radiation, focusing on Current and, on occasion, Depletion region.

His research integrates issues of Molecular physics, Radiation, Common emitter and Analytical chemistry in his study of Bipolar junction transistor. His research in Electronic engineering intersects with topics in Stress, Comparator, Hydrogen molecule, Linear circuit and Voltage regulator. His Transistor research incorporates themes from Electronic circuit, Ionization and Absorbed dose.

He most often published in these fields:

  • Optoelectronics (60.68%)
  • Bipolar junction transistor (40.17%)
  • Electronic engineering (35.04%)

What were the highlights of his more recent work (between 2005-2013)?

  • Optoelectronics (60.68%)
  • Bipolar junction transistor (40.17%)
  • Electronic engineering (35.04%)

In recent papers he was focusing on the following fields of study:

R.L. Pease focuses on Optoelectronics, Bipolar junction transistor, Electronic engineering, Absorbed dose and Transistor. His work on Silicon as part of general Optoelectronics study is frequently linked to Annealing, therefore connecting diverse disciplines of science. He interconnects Ionizing radiation, Molecular physics, Radiation and Analytical chemistry in the investigation of issues within Bipolar junction transistor.

His studies deal with areas such as Radiation hardening and Hydrogen molecule as well as Electronic engineering. His Absorbed dose study also includes fields such as

  • Linear circuit that intertwine with fields like Operational amplifier and Voltage regulator,
  • Microelectronics and Silicon carbide most often made with reference to Silicon nitride. In his work, Integrated circuit, Simulation and Logic gate is strongly intertwined with Electronic circuit, which is a subfield of Transistor.

Between 2005 and 2013, his most popular works were:

  • ELDRS in Bipolar Linear Circuits: A Review (121 citations)
  • Mechanisms of Enhanced Radiation-Induced Degradation Due to Excess Molecular Hydrogen in Bipolar Oxides (64 citations)
  • The Effects of Hydrogen on the Enhanced Low Dose Rate Sensitivity (ELDRS) of Bipolar Linear Circuits (59 citations)

In his most recent research, the most cited papers focused on:

  • Electrical engineering
  • Integrated circuit
  • Transistor

His main research concerns Bipolar junction transistor, Absorbed dose, Optoelectronics, Transistor and Electronic engineering. His Bipolar junction transistor research is multidisciplinary, relying on both Molecular physics, Radiation, Electron capture and Atomic physics. His Optoelectronics research incorporates themes from Radiochemistry, Transducer and Dosimetry.

His Transistor research is multidisciplinary, relying on both Electronic circuit and Linear circuit. His Linear circuit study incorporates themes from Amplitude, Ionizing radiation and Operational amplifier. In his research on the topic of Electronic engineering, Analytical chemistry and Radiation induced is strongly related with Hydrogen molecule.

This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.

Best Publications

Response of advanced bipolar processes to ionizing radiation

E.W. Enlow;R.L. Pease;W. Combs;R.D. Schrimpf.
IEEE Transactions on Nuclear Science (1991)

394 Citations

Response of advanced bipolar processes to ionizing radiation

E.W. Enlow;R.L. Pease;W. Combs;R.D. Schrimpf.
IEEE Transactions on Nuclear Science (1991)

394 Citations

Physical mechanisms contributing to enhanced bipolar gain degradation at low dose rates

D.M. Fleetwood;S.L. Kosier;R.N. Nowlin;R.D. Schrimpf.
IEEE Transactions on Nuclear Science (1994)

365 Citations

Physical mechanisms contributing to enhanced bipolar gain degradation at low dose rates

D.M. Fleetwood;S.L. Kosier;R.N. Nowlin;R.D. Schrimpf.
IEEE Transactions on Nuclear Science (1994)

365 Citations

Subbandgap laser-induced single event effects: carrier generation via two-photon absorption

D. McMorrow;W.T. Lotshaw;J.S. Melinger;S. Buchner.
IEEE Transactions on Nuclear Science (2002)

277 Citations

Subbandgap laser-induced single event effects: carrier generation via two-photon absorption

D. McMorrow;W.T. Lotshaw;J.S. Melinger;S. Buchner.
IEEE Transactions on Nuclear Science (2002)

277 Citations

Charge separation for bipolar transistors

S.L. Kosier;R.D. Shrimpf;R.N. Nowlin;D.M. Fleetwood.
IEEE Transactions on Nuclear Science (1993)

226 Citations

Charge separation for bipolar transistors

S.L. Kosier;R.D. Shrimpf;R.N. Nowlin;D.M. Fleetwood.
IEEE Transactions on Nuclear Science (1993)

226 Citations

ELDRS in Bipolar Linear Circuits: A Review

R.L. Pease;R.D. Schrimpf;D.M. Fleetwood.
european conference on radiation and its effects on components and systems (2008)

212 Citations

ELDRS in Bipolar Linear Circuits: A Review

R.L. Pease;R.D. Schrimpf;D.M. Fleetwood.
european conference on radiation and its effects on components and systems (2008)

212 Citations

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