World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
51
Citations
7350
World Ranking
2726
National Ranking
1035

R.L. Pease publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where R.L. Pease sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 148 publications — 13th percentile

13% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

R.L. Pease D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where R.L. Pease sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 51 D-Index — 63rd percentile

63% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Research.com Recognitions

  • 2007 - IEEE Fellow For contributions to radiation response of microelectronic devices, circuits, and systems

Overview

R.L. Pease is an independent scientist and consultant based in the United States. The focus of their work centers around the radiation response of microelectronic devices, circuits, and systems.

Pease has been recognized by professional organizations, notably receiving the IEEE Fellow award in 2007 for contributions in their area of expertise related to microelectronics and radiation effects.

As a researcher, Pease has not published recent papers listed in the available data, and there are no frequent co-authors or publication venues documented. Likewise, no book publications, specific fields of study, subfields, or main topics of work are itemized in the source information.

The affiliation as an independent consultant indicates a career path that may involve applied research, advisory roles, or project-based collaborations in their technical area, though specific collaborations or institutions are not detailed.

Best Publications

  • Response of advanced bipolar processes to ionizing radiation

    E.W. Enlow;R.L. Pease;W. Combs;R.D. Schrimpf

  • Physical mechanisms contributing to enhanced bipolar gain degradation at low dose rates

    D.M. Fleetwood;S.L. Kosier;R.N. Nowlin;R.D. Schrimpf

  • Subbandgap laser-induced single event effects: carrier generation via two-photon absorption

    D. McMorrow;W.T. Lotshaw;J.S. Melinger;S. Buchner

  • Charge separation for bipolar transistors

    S.L. Kosier;R.D. Shrimpf;R.N. Nowlin;D.M. Fleetwood

  • ELDRS in Bipolar Linear Circuits: A Review

    R.L. Pease;R.D. Schrimpf;D.M. Fleetwood

  • Trends in the total-dose response of modern bipolar transistors

    S.L. Kosier;W.E. Combs;A. Wei;R.A. Schrimpf

  • Hardness assurance testing of bipolar junction transistors at elevated irradiation temperatures

    S.C. Witczak;R.D. Schrimpf;D.M. Fleetwood;K.F. Galloway

  • Mechanisms for radiation dose-rate sensitivity of bipolar transistors

    H.P. Hjalmarson;R.L. Pease;S.C. Witczak;M.R. Shaneyfelt

  • Comparison of ionizing-radiation-induced gain degradation in lateral, substrate, and vertical PNP BJTs

    D.M. Schmidt;D.M. Fleetwood;R.D. Schrimpf;R.L. Pease

  • Modeling ionizing radiation induced gain degradation of the lateral PNP bipolar junction transistor

    D.M. Schmidt;A. Wu;R.D. Schrimpf;D.M. Fleetwood

  • Gain degradation of lateral and substrate pnp bipolar junction transistors

    S.C. Witczak;R.D. Schrimpf;K.F. Galloway;D.M. Fleetwood

  • Physically based comparison of hot-carrier-induced and ionizing-radiation-induced degradation in BJTs

    S.L. Kosier;A. Wei;R.D. Schrimpf;D.M. Fleetwood

  • Three-dimensional mapping of single-event effects using two photon absorption

    D. McMorrow;W.T. Lotshaw;J.S. Melinger;S. Buchner

  • A proposed hardness assurance test methodology for bipolar linear circuits and devices in a space ionizing radiation environment

    R.L. Pease;L.M. Cohn;D.M. Fleetwood;M.A. Gehlhausen

  • Hardness-assurance and testing issues for bipolar/BiCMOS devices

    R.N. Nowlin;D.M. Fleetwood;R.D. Schrimpf;R.L. Pease

  • Impact of oxide thickness on SEGR failure in vertical power MOSFETs; development of a semi-empirical expression

    J.L. Titus;C.F. Wheatley;D.I. Burton;I. Mouret

  • Mechanisms of Enhanced Radiation-Induced Degradation Due to Excess Molecular Hydrogen in Bipolar Oxides

    X.J. Chen;H.J. Barnaby;B. Vermeire;K. Holbert

  • Analytical model for proton radiation effects in bipolar devices

    H.J. Barnaby;S.K. Smith;R.D. Schrimpf;D.M. Fleetwood

  • Thermal-stress effects and enhanced low dose rate sensitivity in linear bipolar ICs

    M.R. Shaneyfelt;J.R. Schwank;S.C. Witczak;D.M. Fleetwood

  • ACCELERATED TESTS FOR SIMULATING LOW DOSE RATE GAIN DEGRADATION OF LATERAL AND SUBSTRATE PNP BIPOLAR JUNCTION TRANSISTORS

    S C. Witczak;R D. Schrimpf;K F. Galloway;D M. Fleetwood

Frequent Co-Authors

Ronald D. Schrimpf
Ronald D. Schrimpf Vanderbilt University
Daniel M. Fleetwood
Daniel M. Fleetwood Vanderbilt University
Hugh J. Barnaby
Hugh J. Barnaby Arizona State University
Marty R. Shaneyfelt
Marty R. Shaneyfelt Sandia National Laboratories
S. P. Buchner
S. P. Buchner United States Naval Research Laboratory
J.R. Schwank
J.R. Schwank Sandia National Laboratories
Dale McMorrow
Dale McMorrow United States Naval Research Laboratory
Kenneth F. Galloway
Kenneth F. Galloway Vanderbilt University
Lloyd W. Massengill
Lloyd W. Massengill Vanderbilt University
Sokrates T. Pantelides
Sokrates T. Pantelides Vanderbilt University

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Related Online Degrees & Career Pathways

For students pursuing Electronics and Electrical Engineering, exploring related online degrees can open diverse career pathways. For example, project management skills are highly valuable in engineering roles, helping professionals lead technical teams and complex projects effectively. Those interested in this route can consider a accelerated online project management degree, which offers flexible learning options to balance education with professional commitments.

Additionally, earning a bachelor degree in project management enhances leadership capabilities and prepares students for managerial roles within the engineering sector. Many institutions also provide accelerated online degree programs that enable working adults to upskill quickly without disrupting their careers.

For introverted students, it's important to note that careers in engineering and project management can align well with individual working styles, often involving focused problem-solving and independent tasks. Some of the good jobs for introverts highlight roles where introversion is an asset, making these combined educational paths particularly suitable.

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