P.S. Winokur

Research.com Recognitions

• 2000 - Fellow of American Physical Society (APS) Citation For contributions to the understanding of physical mechanisms governing the response of CMOS devices to ionizing radiation and to the development of radiationhardened Si gate CMOS technology
• 1991 - IEEE Fellow For contributions to the understanding and improvement of the radiation response of electronic materials and devices, and for improvements in total-dose hardness assurance of integrated circuits.

Overview

Best Publications

• Simple technique for separating the effects of interface traps and trapped‐oxide charge in metal‐oxide‐semiconductor transistors

  Unknown

  775
  Citations

• Effects of oxide traps, interface traps, and ‘‘border traps’’ on metal‐oxide‐semiconductor devices

  D. M. Fleetwood;P. S. Winokur;R. A. Reber;T. L. Meisenheimer

  613
  Citations

• Correlating the Radiation Response of MOS Capacitors and Transistors

  P. S. Winokur;J. R. Schwank;P. J. McWhorter;P. V. Dressendorfer

  588
  Citations

• Physical Mechanisms Contributing to Device "Rebound"

  J. R. Schwank;P. S. Winokur;P. J. McWhorter;F. W. Sexton

  486
  Citations

• Physical mechanisms contributing to enhanced bipolar gain degradation at low dose rates

  D.M. Fleetwood;S.L. Kosier;R.N. Nowlin;R.D. Schrimpf

  379
  Citations

• Using laboratory X-ray and cobalt-60 irradiations to predict CMOS device response in strategic and space environments

  D.M. Fleetwood;P.S. Winokur;J.R. Schwank

  271
  Citations

• SEU-sensitive volumes in bulk and SOI SRAMs from first-principles calculations and experiments

  P.E. Dodd;A.R. Shaneyfelt;K.M. Horn;D.S. Walsh

  255
  Citations

• Border traps: issues for MOS radiation response and long-term reliability

  D.M. Fleetwood;M.R. Shaneyfelt;W.L. Warren;J.R. Schwank

  236
  Citations

• Non-volatile memory device based on mobile protons in SiO 2 thin films

  K. Vanheusden;W. L. Warren;R. A. B. Devine;D. M. Fleetwood

  209
  Citations

• Two‐stage process for buildup of radiation‐induced interface states

  Unknown

  192
  Citations

• Field dependence of interface-trap buildup in polysilicon and metal gate MOS devices

  M.R. Shaneyfelt;J.R. Schwank;D.M. Fleetwood;P.S. Winokur

  186
  Citations

• Three-dimensional simulation of charge collection and multiple-bit upset in Si devices

  P.E. Dodd;F.W. Sexton;P.S. Winokur

  175
  Citations

• Microscopic nature of border traps in MOS oxides

  W.L. Warren;M.R. Shaneyfelt;D.M. Fleetwood;J.R. Schwank

  170
  Citations

• New insights into radiation-induced oxide-trap charge through thermally-stimulated-current measurement and analysis (MOS capacitors)

  D.M. Fleetwood;S.L. Miller;R.A. Reber;P.J. McWhorter

  165
  Citations

• Effects of interface traps and border traps on MOS postirradiation annealing response

  D.M. Fleetwood;W.L. Warren;J.R. Schwank;P.S. Winokur

  150
  Citations

• An Evaluation of Low-Energy X-Ray and Cobalt-60 Irradiations of MOS Transistors

  C. M. Dozier;D. M. Fleetwood;D. B. Brown;P. S. Winokur

  148
  Citations

• Dependence of Interface-State Buildup on Hole Generation and Transport in Irradiated MOS Capacitors

  Unknown

  143
  Citations

• Field- and Time-Dependent Radiation Effects at the SiO2/Si Interface of Hardened MOS Capacitors

  Unknown

  138
  Citations

• The Role of Hydrogen in Radiation-Induced Defect Formation in Polysilicon Gate MOS Devices

  J. R. Schwank;D. M. Fleetwood;P. S. Winokur;P. V. Dressendorfer

  132
  Citations

• An overview of radiation effects on electronics in the space telecommunications environment

  Daniel M. Fleetwood;Peter S. Winokur;Paul E. Dodd

  127
  Citations

• Optimizing and Controlling the Radiation Hardness of a Si-Gate CMOS Process

  P. S. Winokur;E. B. Errett;D. M. Fleetwood;P. V. Dressendorfer

  113
  Citations

• Total-Dose Radiation and Annealing Studies: Implications for Hardness Assurance Testing

  P. S. Winokur;F. W. Sexton;J. R. Schwank;D. M. Fleetwood

  108
  Citations

• Latent interface-trap buildup and its implications for hardness assurance (MOS transistors)

  J.R. Schwank;D.M. Fleetwood;M.R. Shaneyfelt;P.S. Winokur

  108
  Citations

• 1/f noise, hydrogen transport, and latent interface-trap buildup in irradiated MOS devices

  D.M. Fleetwood;M.J. Johnson;T.L. Meisenheimer;P.S. Winokur

  108
  Citations