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P.S. Winokur

D-Index & Metrics

Discipline name D-Index World Ranking National Ranking Publications Citations
Materials Science 56 8368 2054 128 9691

P.S. Winokur publications per year

The chart shows the history of publications by P.S. Winokur between 1973 and 2001, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. P.S. Winokur published across 29 years, from 1973 to 2001, averaging 4.8 papers a year. Output peaked at 17 publications in 1994. 14 of the 139 publications appeared in the last two years.

No. of publications
5 10 15
Bar chart. Horizontal axis: year, 1973 to 2001. Vertical axis: number of publications, 0 to 17. Peak 17 publications in 1994. 1973: 1 publication 1974: 0 publications 1975: 1 publication 1976: 2 publications 1977: 1 publication 1978: 2 publications 1979: 1 publication 1980: 1 publication 1981: 1 publication 1982: 1 publication 1983: 1 publication 1984: 2 publications 1985: 4 publications 1986: 9 publications 1987: 4 publications 1988: 6 publications 1989: 3 publications 1990: 7 publications 1991: 7 publications 1992: 7 publications 1993: 11 publications 1994: 17 publications 1995: 8 publications 1996: 4 publications 1997: 11 publications 1998: 9 publications 1999: 4 publications 2000: 11 publications 2001: 3 publications
1973 2001

139 publications in total across all disciplines

View publications per year as a table
P.S. Winokur: publications per year, 1973 to 2001
Year Publications
1973 1
1974 0
1975 1
1976 2
1977 1
1978 2
1979 1
1980 1
1981 1
1982 1
1983 1
1984 2
1985 4
1986 9
1987 4
1988 6
1989 3
1990 7
1991 7
1992 7
1993 11
1994 17
1995 8
1996 4
1997 11
1998 9
1999 4
2000 11
2001 3
Total 139
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P.S. Winokur publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where P.S. Winokur sits on this spectrum.

No. of scientists
200 400 600 800
Bar chart with 57 bars. Horizontal axis: publications, 50–69 to 1,163+. Vertical axis: number of scientists, 0 to 891. Most scientists, 891, have 190–209 publications. The last bar groups every scientist with 1,163 publications or more. The highlighted bar, 110–129 publications, is where this scientist sits. 50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50–69 publications 1,163+

This scientist: 128 publications — 8th percentile

8% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

View publications distribution as a table
Number of Materials Science scientists by publication count, Research.com 2026 ranking edition. Based on 12,847 ranked scientists.
Publications Scientists This scientist
50–69 28
70–89 152
90–109 356
110–129 487 128
130–149 723
150–169 835
170–189 850
190–209 891
210–229 862
230–249 766
250–269 726
270–289 665
290–309 593
310–329 537
330–349 477
350–369 440
370–389 356
390–409 321
410–429 256
430–449 246
450–469 216
470–489 212
490–509 174
510–529 194
530–549 162
550–569 131
570–589 111
590–609 103
610–629 99
630–649 77
650–669 92
670–689 56
690–709 53
710–729 53
730–749 38
750–769 52
770–789 43
790–809 38
810–829 34
830–849 25
850–869 18
870–889 20
890–909 24
910–929 27
930–949 20
950–969 17
970–989 10
990–1,009 16
1,010–1,029 13
1,030–1,049 12
1,050–1,069 9
1,070–1,089 8
1,090–1,109 7
1,110–1,129 9
1,130–1,149 2
1,150–1,162 5
1,163+ 100
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P.S. Winokur D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where P.S. Winokur sits on this spectrum.

No. of scientists
200 400 600
Bar chart with 64 bars. Horizontal axis: D-Index, 40–41 to 165+. Vertical axis: number of scientists, 0 to 667. Most scientists, 667, have 52–53 D-Index. The last bar groups every scientist with 165 D-Index or more. The highlighted bar, 56–57 D-Index, is where this scientist sits. 40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40–41 D-Index 165+

This scientist: 56 D-Index — 37th percentile

37% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

View D-Index distribution as a table
Number of Materials Science scientists by D-index, Research.com 2026 ranking edition. Based on 12,847 ranked scientists.
D-Index Scientists This scientist
40–41 211
42–43 450
44–45 612
46–47 612
48–49 598
50–51 657
52–53 667
54–55 621
56–57 597 56
58–59 610
60–61 587
62–63 606
64–65 533
66–67 490
68–69 469
70–71 378
72–73 421
74–75 359
76–77 323
78–79 299
80–81 230
82–83 210
84–85 195
86–87 203
88–89 175
90–91 175
92–93 142
94–95 121
96–97 117
98–99 107
100–101 88
102–103 85
104–105 68
106–107 62
108–109 57
110–111 45
112–113 49
114–115 50
116–117 34
118–119 38
120–121 37
122–123 29
124–125 28
126–127 24
128–129 33
130–131 28
132–133 21
134–135 20
136–137 23
138–139 17
140–141 12
142–143 17
144–145 21
146–147 13
148–149 11
150–151 14
152–153 13
154–155 9
156–157 10
158–159 7
160–161 4
162–163 4
164 3
165+ 98
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Research.com Recognitions

  • 2000 - Fellow of American Physical Society (APS) Citation For contributions to the understanding of physical mechanisms governing the response of CMOS devices to ionizing radiation and to the development of radiationhardened Si gate CMOS technology
  • 1991 - IEEE Fellow For contributions to the understanding and improvement of the radiation response of electronic materials and devices, and for improvements in total-dose hardness assurance of integrated circuits.

Overview

P.S. Winokur is affiliated with Sandia National Laboratories in the United States. The scientist's work focuses on the physical mechanisms governing the response of CMOS devices to ionizing radiation, as well as the development of radiation-hardened silicon gate CMOS technology. This area of research is significant in fields related to radiation effects on electronic materials and devices.

Winokur has been recognized with notable honors during their career. In 2000, they were named a Fellow of the American Physical Society (APS) with a citation highlighting their contributions to understanding the physical mechanisms affecting CMOS devices under ionizing radiation and to advancing radiation-hardened CMOS technology.

Earlier, in 1991, Winokur was granted the IEEE Fellow distinction. The award credited their contributions to understanding and improving the radiation response of electronic materials and devices, alongside enhancements in total-dose hardness assurance of integrated circuits.

Best Publications

  • Simple technique for separating the effects of interface traps and trapped‐oxide charge in metal‐oxide‐semiconductor transistors

    Unknown

  • Effects of oxide traps, interface traps, and ‘‘border traps’’ on metal‐oxide‐semiconductor devices

    D. M. Fleetwood;P. S. Winokur;R. A. Reber;T. L. Meisenheimer

  • Correlating the Radiation Response of MOS Capacitors and Transistors

    P. S. Winokur;J. R. Schwank;P. J. McWhorter;P. V. Dressendorfer

  • Physical Mechanisms Contributing to Device "Rebound"

    J. R. Schwank;P. S. Winokur;P. J. McWhorter;F. W. Sexton

  • Physical mechanisms contributing to enhanced bipolar gain degradation at low dose rates

    D.M. Fleetwood;S.L. Kosier;R.N. Nowlin;R.D. Schrimpf

  • Using laboratory X-ray and cobalt-60 irradiations to predict CMOS device response in strategic and space environments

    D.M. Fleetwood;P.S. Winokur;J.R. Schwank

  • SEU-sensitive volumes in bulk and SOI SRAMs from first-principles calculations and experiments

    P.E. Dodd;A.R. Shaneyfelt;K.M. Horn;D.S. Walsh

  • Border traps: issues for MOS radiation response and long-term reliability

    D.M. Fleetwood;M.R. Shaneyfelt;W.L. Warren;J.R. Schwank

  • Non-volatile memory device based on mobile protons in SiO 2 thin films

    K. Vanheusden;W. L. Warren;R. A. B. Devine;D. M. Fleetwood

  • Two‐stage process for buildup of radiation‐induced interface states

    Unknown

  • Field dependence of interface-trap buildup in polysilicon and metal gate MOS devices

    M.R. Shaneyfelt;J.R. Schwank;D.M. Fleetwood;P.S. Winokur

  • Three-dimensional simulation of charge collection and multiple-bit upset in Si devices

    P.E. Dodd;F.W. Sexton;P.S. Winokur

  • Microscopic nature of border traps in MOS oxides

    W.L. Warren;M.R. Shaneyfelt;D.M. Fleetwood;J.R. Schwank

  • New insights into radiation-induced oxide-trap charge through thermally-stimulated-current measurement and analysis (MOS capacitors)

    D.M. Fleetwood;S.L. Miller;R.A. Reber;P.J. McWhorter

  • Effects of interface traps and border traps on MOS postirradiation annealing response

    D.M. Fleetwood;W.L. Warren;J.R. Schwank;P.S. Winokur

  • An Evaluation of Low-Energy X-Ray and Cobalt-60 Irradiations of MOS Transistors

    C. M. Dozier;D. M. Fleetwood;D. B. Brown;P. S. Winokur

  • Dependence of Interface-State Buildup on Hole Generation and Transport in Irradiated MOS Capacitors

    Unknown

  • Field- and Time-Dependent Radiation Effects at the SiO2/Si Interface of Hardened MOS Capacitors

    Unknown

  • The Role of Hydrogen in Radiation-Induced Defect Formation in Polysilicon Gate MOS Devices

    J. R. Schwank;D. M. Fleetwood;P. S. Winokur;P. V. Dressendorfer

  • An overview of radiation effects on electronics in the space telecommunications environment

    Daniel M. Fleetwood;Peter S. Winokur;Paul E. Dodd

  • Optimizing and Controlling the Radiation Hardness of a Si-Gate CMOS Process

    P. S. Winokur;E. B. Errett;D. M. Fleetwood;P. V. Dressendorfer

  • Total-Dose Radiation and Annealing Studies: Implications for Hardness Assurance Testing

    P. S. Winokur;F. W. Sexton;J. R. Schwank;D. M. Fleetwood

  • Latent interface-trap buildup and its implications for hardness assurance (MOS transistors)

    J.R. Schwank;D.M. Fleetwood;M.R. Shaneyfelt;P.S. Winokur

  • 1/f noise, hydrogen transport, and latent interface-trap buildup in irradiated MOS devices

    D.M. Fleetwood;M.J. Johnson;T.L. Meisenheimer;P.S. Winokur

Frequent Co-Authors

Daniel M. Fleetwood
Daniel M. Fleetwood Vanderbilt University
Marty R. Shaneyfelt
Marty R. Shaneyfelt Sandia National Laboratories
J.R. Schwank
J.R. Schwank Sandia National Laboratories
F.W. Sexton
F.W. Sexton Sandia National Laboratories
William L. Warren
William L. Warren Sanofi Pasteur
Paul E. Dodd
Paul E. Dodd Sandia National Laboratories
R.L. Pease
R.L. Pease Independent Scientist / Consultant, US
P. Paillet
P. Paillet French Alternative Energies and Atomic Energy Commission (CEA)
Robert M. Wallace
Robert M. Wallace The University of Texas at Dallas
Jianbin Xu
Jianbin Xu Chinese University of Hong Kong

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Best Scientists Citing P.S. Winokur

Daniel M. Fleetwood

Daniel M. Fleetwood

Vanderbilt University

Publications: 224

Ronald D. Schrimpf

Ronald D. Schrimpf

Vanderbilt University

Publications: 200

Marty R. Shaneyfelt

Marty R. Shaneyfelt

Sandia National Laboratories

Publications: 90

Sokrates T. Pantelides

Sokrates T. Pantelides

Vanderbilt University

Publications: 74

J.R. Schwank

J.R. Schwank

Sandia National Laboratories

Publications: 74

Paul E. Dodd

Paul E. Dodd

Sandia National Laboratories

Publications: 60

Robert A. Reed

Robert A. Reed

Vanderbilt University

Publications: 54

R.L. Pease

R.L. Pease

Independent Scientist / Consultant, US

Publications: 53

P. Paillet

P. Paillet

French Alternative Energies and Atomic Energy Commission (CEA)

Publications: 51

Hugh J. Barnaby

Hugh J. Barnaby

Arizona State University

Publications: 49

Alessandro Paccagnella

Alessandro Paccagnella

University of Padua

Publications: 46

Kenneth F. Galloway

Kenneth F. Galloway

Vanderbilt University

Publications: 43

Patrick M. Lenahan

Patrick M. Lenahan

Pennsylvania State University

Publications: 30

Eddy Simoen

Eddy Simoen

Ghent University

Publications: 29

Cor Claeys

Cor Claeys

KU Leuven

Publications: 26

Guido Groeseneken

Guido Groeseneken

Imec

Publications: 22

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