World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
38
Citations
6249
World Ranking
4898
National Ranking
1708

Research.com Recognitions

  • 2017 - IEEE Fellow For research of radiation effects in bipolar junction transistors

Overview

Hugh J. Barnaby is affiliated with Arizona State University in the United States. Their research primarily focuses on engineering, with a significant emphasis on electrical and electronic engineering. The scientist has contributed extensively to fields related to semiconductor materials, device advancements, and radiation effects in electronics.

Their work covers a variety of specialized topics, including:

  • Semiconductor materials and devices
  • Advancements in Semiconductor Devices and Circuit Design
  • Radiation Effects in Electronics
  • Advanced Memory and Neural Computing
  • Integrated Circuits and Semiconductor Failure Analysis
  • Ferroelectric and Negative Capacitance Devices
  • Low-power high-performance VLSI design

Barnaby has published research across numerous venues, with frequent contributions to:

  • IEEE Transactions on Nuclear Science
  • IEEE Transactions on Electron Devices
  • Neuromorphic Computing and Engineering
  • Solid-State Electronics
  • SSRN Electronic Journal

Selected recent papers include:

  • "Array-Level Programming of 3-Bit per Cell Resistive Memory and Its Application for Deep Neural Network Inference" (2020, IEEE Transactions on Electron Devices)
  • "The viability of analog-based accelerators for neuromorphic computing: a survey" (2021, Neuromorphic Computing and Engineering)
  • "Analysis of SEGR in Silicon Planar Gate Super-Junction Power MOSFETs" (2021, IEEE Transactions on Nuclear Science)
  • "Investigating Heavy-Ion Effects on 14-nm Process FinFETs: Displacement Damage Versus Total Ionizing Dose" (2021, IEEE Transactions on Nuclear Science)
  • "Single-Event Gate Rupture Hardened Structure for High-Voltage Super-Junction Power MOSFETs" (2021, IEEE Transactions on Electron Devices)

The scientist has collaborated frequently with colleagues including:

  • Matthew Marinella
  • A. Privat
  • Trace Wallace
  • Matthew Spear
  • Sapan Agarwal

Barnaby has authored book chapters published by Springer Nature, specifically contributing to the topic of resistive switching with the book titled "Resistive Switching: Oxide Materials, Mechanisms, Devices and Operations" (2021).

In recognition of contributions to the research of radiation effects in bipolar junction transistors, Hugh J. Barnaby was awarded the IEEE Fellow distinction in 2017.

Best Publications

  • Total-Ionizing-Dose Effects in Modern CMOS Technologies

    H.J. Barnaby

  • Analysis of single-event transients in analog circuits

    P. Adell;R.D. Schrimpf;H.J. Barnaby;R. Marec

  • The energy dependence of proton-induced degradation in AlGaN/GaN high electron mobility transistors

    Xinwen Hu;B.K. Choi;H.J. Barnaby;D.M. Fleetwood

  • Compact Modeling of Total Ionizing Dose and Aging Effects in MOS Technologies

    I. Sanchez Esqueda;H. J. Barnaby;M. P. King

  • Conductive bridging random access memory—materials, devices and applications

    Michael N Kozicki;Hugh J Barnaby

  • Modeling ionizing radiation effects in solid state materials and CMOS devices

    H.J. Barnaby;M.L. McLain;I.S. Esqueda;Xiao Jie Chen

  • Two-dimensional methodology for modeling radiation-induced off-state leakage in CMOS technologies

    I.S. Esqueda;H.J. Barnaby;M.L. Alles

  • Total ionizing dose effects in shallow trench isolation oxides.

    Federico Faccio;Hugh J. Barnaby;Xiao J. Chen;Daniel M. Fleetwood

  • Enhanced TID Susceptibility in Sub-100 nm Bulk CMOS I/O Transistors and Circuits

    M. McLain;H.J. Barnaby;K.E. Holbert;R.D. Schrimpf

  • Mechanisms of Enhanced Radiation-Induced Degradation Due to Excess Molecular Hydrogen in Bipolar Oxides

    X.J. Chen;H.J. Barnaby;B. Vermeire;K. Holbert

  • Reconfigurable Memristive Device Technologies

    Arthur H. Edwards;Hugh J. Barnaby;Kristy A. Campbell;Michael N. Kozicki

  • Analytical model for proton radiation effects in bipolar devices

    H.J. Barnaby;S.K. Smith;R.D. Schrimpf;D.M. Fleetwood

  • Volatile and Non-Volatile Switching in Cu-SiO 2 Programmable Metallization Cells

    W. Chen;H. J. Barnaby;M. N. Kozicki

  • Characterization of enhanced low dose rate sensitivity (ELDRS) effects using Gated Lateral PNP transistor structures

    R.L. Pease;D.G. Platteter;G.W. Dunham;J.E. Seiler

  • Proton radiation response mechanisms in bipolar analog circuits

    H.J. Barnaby;R.D. Schrimpf;A.L. Sternberg;V. Berthe

  • The Effects of Hydrogen on the Enhanced Low Dose Rate Sensitivity (ELDRS) of Bipolar Linear Circuits

    R.L. Pease;P.C. Adell;B.G. Rax;Xiao Jie Chen

  • A CMOS-compatible electronic synapse device based on Cu/SiO2/W programmable metallization cells.

    Wenhao Chen;Runchen Fang;Mehmet B Balaban;Weijie Yu

  • Moderated degradation enhancement of lateral pnp transistors due to measurement bias

    S.C. Witczak;R.D. Schrimpf;H.J. Barnaby;R.C. Lacoe

  • Band-to-Band Tunneling (BBT) Induced Leakage Current Enhancement in Irradiated Fully Depleted SOI Devices

    P.C. Adell;H.J. Barnaby;R.D. Schrimpf;B. Vermeire

  • Total ionizing dose effect of γ-ray radiation on the switching characteristics and filament stability of HfOx resistive random access memory

    Runchen Fang;Yago Gonzalez Velo;Wenhao Chen;Keith E. Holbert

  • Monolithically Integrated RRAM- and CMOS-Based In-Memory Computing Optimizations for Efficient Deep Learning

    Shihui Yin;Jae-sun Seo;Yulhwa Kim;Xu Han

Frequent Co-Authors

Michael N. Kozicki
Michael N. Kozicki Arizona State University
Ronald D. Schrimpf
Ronald D. Schrimpf Vanderbilt University
R.L. Pease
R.L. Pease Independent Scientist / Consultant, US
Daniel M. Fleetwood
Daniel M. Fleetwood Vanderbilt University
Shimeng Yu
Shimeng Yu Georgia Institute of Technology
Kenneth F. Galloway
Kenneth F. Galloway Vanderbilt University
Lloyd W. Massengill
Lloyd W. Massengill Vanderbilt University
Sylvain Girard
Sylvain Girard Jean Monnet University
Terry Alford
Terry Alford Arizona State University
Marty R. Shaneyfelt
Marty R. Shaneyfelt Sandia National Laboratories

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