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D-Index & Metrics

Discipline name D-Index World Ranking Current World Ranking National Ranking Current National Ranking Publications Citations
Electronics and Electrical Engineering 38 4898 4700 1709 1597 250 6249

Hugh J. Barnaby publications per year

The chart shows the history of publications by Hugh J. Barnaby between 1996 and 2025, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. Hugh J. Barnaby published across 30 years, from 1996 to 2025, averaging 10.2 papers a year. Output peaked at 20 publications in 2014. 22 of the 306 publications appeared in the last two years.

No. of publications
5 10 15 20
Bar chart. Horizontal axis: year, 1996 to 2025. Vertical axis: number of publications, 0 to 20. Peak 20 publications in 2014. 1996: 1 publication 1997: 1 publication 1998: 6 publications 1999: 7 publications 2000: 3 publications 2001: 2 publications 2002: 7 publications 2003: 4 publications 2004: 7 publications 2005: 6 publications 2006: 7 publications 2007: 17 publications 2008: 11 publications 2009: 12 publications 2010: 7 publications 2011: 15 publications 2012: 8 publications 2013: 17 publications 2014: 20 publications 2015: 18 publications 2016: 17 publications 2017: 10 publications 2018: 7 publications 2019: 15 publications 2020: 8 publications 2021: 17 publications 2022: 20 publications 2023: 14 publications 2024: 12 publications 2025: 10 publications
1996 2025

306 publications in total across all disciplines

View publications per year as a table
Hugh J. Barnaby: publications per year, 1996 to 2025
Year Publications
1996 1
1997 1
1998 6
1999 7
2000 3
2001 2
2002 7
2003 4
2004 7
2005 6
2006 7
2007 17
2008 11
2009 12
2010 7
2011 15
2012 8
2013 17
2014 20
2015 18
2016 17
2017 10
2018 7
2019 15
2020 8
2021 17
2022 20
2023 14
2024 12
2025 10
Total 306
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Hugh J. Barnaby publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Hugh J. Barnaby sits on this spectrum.

No. of scientists
100 200 300 400
Bar chart with 53 bars. Horizontal axis: publications, 34–53 to 1,065+. Vertical axis: number of scientists, 0 to 445. Most scientists, 445, have 174–193 publications. The last bar groups every scientist with 1,065 publications or more. The highlighted bar, 234–253 publications, is where this scientist sits. 34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34–53 publications 1,065+

This scientist: 250 publications — 45th percentile

45% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

View publications distribution as a table
Number of Electronics and Electrical Engineering scientists by publication count, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
Publications Scientists This scientist
34–53 24
54–73 52
74–93 114
94–113 203
114–133 269
134–153 355
154–173 403
174–193 445
194–213 430
214–233 431
234–253 399 250
254–273 366
274–293 335
294–313 300
314–333 276
334–353 250
354–373 214
374–393 187
394–413 152
414–433 169
434–453 147
454–473 111
474–493 117
494–513 103
514–533 99
534–553 92
554–573 75
574–593 58
594–613 69
614–633 50
634–653 62
654–673 54
674–693 44
694–713 37
714–733 28
734–753 26
754–773 26
774–793 19
794–813 23
814–833 20
834–853 16
854–873 20
874–893 11
894–913 11
914–933 16
934–953 13
954–973 10
974–993 11
994–1,013 9
1,014–1,033 9
1,034–1,053 10
1,054–1,064 6
1,065+ 99
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Hugh J. Barnaby D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Hugh J. Barnaby sits on this spectrum.

No. of scientists
50 100 150 200 250
Bar chart with 82 bars. Horizontal axis: D-Index, 30 to 111+. Vertical axis: number of scientists, 0 to 263. Most scientists, 263, have 32 D-Index. The last bar groups every scientist with 111 D-Index or more. The highlighted bar, 38 D-Index, is where this scientist sits. 30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 38 D-Index — 30th percentile

30% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

View D-Index distribution as a table
Number of Electronics and Electrical Engineering scientists by D-index, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
D-Index Scientists This scientist
30 178
31 257
32 263
33 262
34 244
35 236
36 211
37 220
38 214 38
39 214
40 205
41 187
42 194
43 201
44 155
45 189
46 148
47 160
48 134
49 130
50 141
51 156
52 108
53 130
54 112
55 97
56 111
57 102
58 108
59 120
60 103
61 93
62 92
63 74
64 77
65 73
66 64
67 69
68 60
69 39
70 57
71 59
72 46
73 49
74 38
75 35
76 32
77 35
78 31
79 22
80 34
81 31
82 34
83 23
84 18
85 30
86 19
87 19
88 20
89 8
90 17
91 7
92 14
93 9
94 15
95 10
96 12
97 10
98 10
99 12
100 16
101 5
102 7
103 7
104 8
105 9
106 13
107 4
108 5
109 10
110 8
111+ 96
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Research.com Recognitions

  • 2017 - IEEE Fellow For research of radiation effects in bipolar junction transistors

Overview

Hugh J. Barnaby is affiliated with Arizona State University in the United States. Their research primarily focuses on engineering, with a significant emphasis on electrical and electronic engineering. The scientist has contributed extensively to fields related to semiconductor materials, device advancements, and radiation effects in electronics.

Their work covers a variety of specialized topics, including:

  • Semiconductor materials and devices
  • Advancements in Semiconductor Devices and Circuit Design
  • Radiation Effects in Electronics
  • Advanced Memory and Neural Computing
  • Integrated Circuits and Semiconductor Failure Analysis
  • Ferroelectric and Negative Capacitance Devices
  • Low-power high-performance VLSI design

Barnaby has published research across numerous venues, with frequent contributions to:

  • IEEE Transactions on Nuclear Science
  • IEEE Transactions on Electron Devices
  • Neuromorphic Computing and Engineering
  • Solid-State Electronics
  • SSRN Electronic Journal

Selected recent papers include:

  • "Array-Level Programming of 3-Bit per Cell Resistive Memory and Its Application for Deep Neural Network Inference" (2020, IEEE Transactions on Electron Devices)
  • "The viability of analog-based accelerators for neuromorphic computing: a survey" (2021, Neuromorphic Computing and Engineering)
  • "Analysis of SEGR in Silicon Planar Gate Super-Junction Power MOSFETs" (2021, IEEE Transactions on Nuclear Science)
  • "Investigating Heavy-Ion Effects on 14-nm Process FinFETs: Displacement Damage Versus Total Ionizing Dose" (2021, IEEE Transactions on Nuclear Science)
  • "Single-Event Gate Rupture Hardened Structure for High-Voltage Super-Junction Power MOSFETs" (2021, IEEE Transactions on Electron Devices)

The scientist has collaborated frequently with colleagues including:

  • Matthew Marinella
  • A. Privat
  • Trace Wallace
  • Matthew Spear
  • Sapan Agarwal

Barnaby has authored book chapters published by Springer Nature, specifically contributing to the topic of resistive switching with the book titled "Resistive Switching: Oxide Materials, Mechanisms, Devices and Operations" (2021).

In recognition of contributions to the research of radiation effects in bipolar junction transistors, Hugh J. Barnaby was awarded the IEEE Fellow distinction in 2017.

Best Publications

  • Total-Ionizing-Dose Effects in Modern CMOS Technologies

    H.J. Barnaby

  • Analysis of single-event transients in analog circuits

    P. Adell;R.D. Schrimpf;H.J. Barnaby;R. Marec

  • The energy dependence of proton-induced degradation in AlGaN/GaN high electron mobility transistors

    Xinwen Hu;B.K. Choi;H.J. Barnaby;D.M. Fleetwood

  • Compact Modeling of Total Ionizing Dose and Aging Effects in MOS Technologies

    I. Sanchez Esqueda;H. J. Barnaby;M. P. King

  • Conductive bridging random access memory—materials, devices and applications

    Michael N Kozicki;Hugh J Barnaby

  • Modeling ionizing radiation effects in solid state materials and CMOS devices

    H.J. Barnaby;M.L. McLain;I.S. Esqueda;Xiao Jie Chen

  • Two-dimensional methodology for modeling radiation-induced off-state leakage in CMOS technologies

    I.S. Esqueda;H.J. Barnaby;M.L. Alles

  • Total ionizing dose effects in shallow trench isolation oxides.

    Federico Faccio;Hugh J. Barnaby;Xiao J. Chen;Daniel M. Fleetwood

  • Enhanced TID Susceptibility in Sub-100 nm Bulk CMOS I/O Transistors and Circuits

    M. McLain;H.J. Barnaby;K.E. Holbert;R.D. Schrimpf

  • Mechanisms of Enhanced Radiation-Induced Degradation Due to Excess Molecular Hydrogen in Bipolar Oxides

    X.J. Chen;H.J. Barnaby;B. Vermeire;K. Holbert

  • Reconfigurable Memristive Device Technologies

    Arthur H. Edwards;Hugh J. Barnaby;Kristy A. Campbell;Michael N. Kozicki

  • Analytical model for proton radiation effects in bipolar devices

    H.J. Barnaby;S.K. Smith;R.D. Schrimpf;D.M. Fleetwood

  • Volatile and Non-Volatile Switching in Cu-SiO 2 Programmable Metallization Cells

    W. Chen;H. J. Barnaby;M. N. Kozicki

  • Characterization of enhanced low dose rate sensitivity (ELDRS) effects using Gated Lateral PNP transistor structures

    R.L. Pease;D.G. Platteter;G.W. Dunham;J.E. Seiler

  • Proton radiation response mechanisms in bipolar analog circuits

    H.J. Barnaby;R.D. Schrimpf;A.L. Sternberg;V. Berthe

  • The Effects of Hydrogen on the Enhanced Low Dose Rate Sensitivity (ELDRS) of Bipolar Linear Circuits

    R.L. Pease;P.C. Adell;B.G. Rax;Xiao Jie Chen

  • A CMOS-compatible electronic synapse device based on Cu/SiO2/W programmable metallization cells.

    Wenhao Chen;Runchen Fang;Mehmet B Balaban;Weijie Yu

  • Moderated degradation enhancement of lateral pnp transistors due to measurement bias

    S.C. Witczak;R.D. Schrimpf;H.J. Barnaby;R.C. Lacoe

  • Band-to-Band Tunneling (BBT) Induced Leakage Current Enhancement in Irradiated Fully Depleted SOI Devices

    P.C. Adell;H.J. Barnaby;R.D. Schrimpf;B. Vermeire

  • Total ionizing dose effect of γ-ray radiation on the switching characteristics and filament stability of HfOx resistive random access memory

    Runchen Fang;Yago Gonzalez Velo;Wenhao Chen;Keith E. Holbert

  • Monolithically Integrated RRAM- and CMOS-Based In-Memory Computing Optimizations for Efficient Deep Learning

    Shihui Yin;Jae-sun Seo;Yulhwa Kim;Xu Han

Frequent Co-Authors

Michael N. Kozicki
Michael N. Kozicki Arizona State University
Ronald D. Schrimpf
Ronald D. Schrimpf Vanderbilt University
R.L. Pease
R.L. Pease Independent Scientist / Consultant, US
Daniel M. Fleetwood
Daniel M. Fleetwood Vanderbilt University
Shimeng Yu
Shimeng Yu Georgia Institute of Technology
Kenneth F. Galloway
Kenneth F. Galloway Vanderbilt University
Lloyd W. Massengill
Lloyd W. Massengill Vanderbilt University
Sylvain Girard
Sylvain Girard Jean Monnet University
Terry Alford
Terry Alford Arizona State University
Marty R. Shaneyfelt
Marty R. Shaneyfelt Sandia National Laboratories

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