World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
38
Citations
6249
World Ranking
4898
National Ranking
1709

Hugh J. Barnaby publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Hugh J. Barnaby sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 250 publications — 45th percentile

45% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Hugh J. Barnaby D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Hugh J. Barnaby sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 38 D-Index — 30th percentile

30% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Research.com Recognitions

  • 2017 - IEEE Fellow For research of radiation effects in bipolar junction transistors

Overview

Hugh J. Barnaby is affiliated with Arizona State University in the United States. Their research primarily focuses on engineering, with a significant emphasis on electrical and electronic engineering. The scientist has contributed extensively to fields related to semiconductor materials, device advancements, and radiation effects in electronics.

Their work covers a variety of specialized topics, including:

  • Semiconductor materials and devices
  • Advancements in Semiconductor Devices and Circuit Design
  • Radiation Effects in Electronics
  • Advanced Memory and Neural Computing
  • Integrated Circuits and Semiconductor Failure Analysis
  • Ferroelectric and Negative Capacitance Devices
  • Low-power high-performance VLSI design

Barnaby has published research across numerous venues, with frequent contributions to:

  • IEEE Transactions on Nuclear Science
  • IEEE Transactions on Electron Devices
  • Neuromorphic Computing and Engineering
  • Solid-State Electronics
  • SSRN Electronic Journal

Selected recent papers include:

  • "Array-Level Programming of 3-Bit per Cell Resistive Memory and Its Application for Deep Neural Network Inference" (2020, IEEE Transactions on Electron Devices)
  • "The viability of analog-based accelerators for neuromorphic computing: a survey" (2021, Neuromorphic Computing and Engineering)
  • "Analysis of SEGR in Silicon Planar Gate Super-Junction Power MOSFETs" (2021, IEEE Transactions on Nuclear Science)
  • "Investigating Heavy-Ion Effects on 14-nm Process FinFETs: Displacement Damage Versus Total Ionizing Dose" (2021, IEEE Transactions on Nuclear Science)
  • "Single-Event Gate Rupture Hardened Structure for High-Voltage Super-Junction Power MOSFETs" (2021, IEEE Transactions on Electron Devices)

The scientist has collaborated frequently with colleagues including:

  • Matthew Marinella
  • A. Privat
  • Trace Wallace
  • Matthew Spear
  • Sapan Agarwal

Barnaby has authored book chapters published by Springer Nature, specifically contributing to the topic of resistive switching with the book titled "Resistive Switching: Oxide Materials, Mechanisms, Devices and Operations" (2021).

In recognition of contributions to the research of radiation effects in bipolar junction transistors, Hugh J. Barnaby was awarded the IEEE Fellow distinction in 2017.

Best Publications

  • Total-Ionizing-Dose Effects in Modern CMOS Technologies

    H.J. Barnaby

  • Analysis of single-event transients in analog circuits

    P. Adell;R.D. Schrimpf;H.J. Barnaby;R. Marec

  • The energy dependence of proton-induced degradation in AlGaN/GaN high electron mobility transistors

    Xinwen Hu;B.K. Choi;H.J. Barnaby;D.M. Fleetwood

  • Compact Modeling of Total Ionizing Dose and Aging Effects in MOS Technologies

    I. Sanchez Esqueda;H. J. Barnaby;M. P. King

  • Conductive bridging random access memory—materials, devices and applications

    Michael N Kozicki;Hugh J Barnaby

  • Modeling ionizing radiation effects in solid state materials and CMOS devices

    H.J. Barnaby;M.L. McLain;I.S. Esqueda;Xiao Jie Chen

  • Two-dimensional methodology for modeling radiation-induced off-state leakage in CMOS technologies

    I.S. Esqueda;H.J. Barnaby;M.L. Alles

  • Total ionizing dose effects in shallow trench isolation oxides.

    Federico Faccio;Hugh J. Barnaby;Xiao J. Chen;Daniel M. Fleetwood

  • Enhanced TID Susceptibility in Sub-100 nm Bulk CMOS I/O Transistors and Circuits

    M. McLain;H.J. Barnaby;K.E. Holbert;R.D. Schrimpf

  • Mechanisms of Enhanced Radiation-Induced Degradation Due to Excess Molecular Hydrogen in Bipolar Oxides

    X.J. Chen;H.J. Barnaby;B. Vermeire;K. Holbert

  • Reconfigurable Memristive Device Technologies

    Arthur H. Edwards;Hugh J. Barnaby;Kristy A. Campbell;Michael N. Kozicki

  • Analytical model for proton radiation effects in bipolar devices

    H.J. Barnaby;S.K. Smith;R.D. Schrimpf;D.M. Fleetwood

  • Volatile and Non-Volatile Switching in Cu-SiO 2 Programmable Metallization Cells

    W. Chen;H. J. Barnaby;M. N. Kozicki

  • Characterization of enhanced low dose rate sensitivity (ELDRS) effects using Gated Lateral PNP transistor structures

    R.L. Pease;D.G. Platteter;G.W. Dunham;J.E. Seiler

  • Proton radiation response mechanisms in bipolar analog circuits

    H.J. Barnaby;R.D. Schrimpf;A.L. Sternberg;V. Berthe

  • The Effects of Hydrogen on the Enhanced Low Dose Rate Sensitivity (ELDRS) of Bipolar Linear Circuits

    R.L. Pease;P.C. Adell;B.G. Rax;Xiao Jie Chen

  • A CMOS-compatible electronic synapse device based on Cu/SiO2/W programmable metallization cells.

    Wenhao Chen;Runchen Fang;Mehmet B Balaban;Weijie Yu

  • Moderated degradation enhancement of lateral pnp transistors due to measurement bias

    S.C. Witczak;R.D. Schrimpf;H.J. Barnaby;R.C. Lacoe

  • Band-to-Band Tunneling (BBT) Induced Leakage Current Enhancement in Irradiated Fully Depleted SOI Devices

    P.C. Adell;H.J. Barnaby;R.D. Schrimpf;B. Vermeire

  • Total ionizing dose effect of γ-ray radiation on the switching characteristics and filament stability of HfOx resistive random access memory

    Runchen Fang;Yago Gonzalez Velo;Wenhao Chen;Keith E. Holbert

  • Monolithically Integrated RRAM- and CMOS-Based In-Memory Computing Optimizations for Efficient Deep Learning

    Shihui Yin;Jae-sun Seo;Yulhwa Kim;Xu Han

Frequent Co-Authors

Michael N. Kozicki
Michael N. Kozicki Arizona State University
Ronald D. Schrimpf
Ronald D. Schrimpf Vanderbilt University
R.L. Pease
R.L. Pease Independent Scientist / Consultant, US
Daniel M. Fleetwood
Daniel M. Fleetwood Vanderbilt University
Shimeng Yu
Shimeng Yu Georgia Institute of Technology
Kenneth F. Galloway
Kenneth F. Galloway Vanderbilt University
Lloyd W. Massengill
Lloyd W. Massengill Vanderbilt University
Sylvain Girard
Sylvain Girard Jean Monnet University
Terry Alford
Terry Alford Arizona State University
Marty R. Shaneyfelt
Marty R. Shaneyfelt Sandia National Laboratories

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