The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Kenneth F. Galloway sits on this spectrum.
This scientist: 228 publications — 38th percentile
38% of scientists in this discipline score the same or lower.
The last bar groups every scientist with 1,065 publications or more.
The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Kenneth F. Galloway sits on this spectrum.
This scientist: 46 D-Index — 52nd percentile
52% of scientists in this discipline score the same or lower.
The last bar groups every scientist with 111 D-Index or more.
Kenneth F. Galloway focuses on Optoelectronics, MOSFET, Oxide, Power MOSFET and Electrical engineering. The concepts of his Optoelectronics study are interwoven with issues in Ionizing radiation, Irradiation, Spontaneous emission and Transconductance. His research investigates the connection between Irradiation and topics such as Radiation that intersect with problems in Silicon.
Kenneth F. Galloway has researched MOSFET in several fields, including Electron mobility and Simulation. His Power MOSFET study combines topics in areas such as Field-effect transistor, Electronic engineering, Transient response and Power semiconductor device. His Field-effect transistor research integrates issues from Voltage drop and Electron.
His main research concerns Optoelectronics, Power MOSFET, Irradiation, MOSFET and Electrical engineering. Kenneth F. Galloway performs integrative study on Optoelectronics and Oxide in his works. His Power MOSFET research includes themes of Breakdown voltage, Field-effect transistor, Power semiconductor device, Electronic engineering and Gate oxide.
The Field-effect transistor study combines topics in areas such as Time-dependent gate oxide breakdown and Reliability. His work in the fields of Irradiation, such as Ionizing radiation, overlaps with other areas such as Annealing. As a part of the same scientific study, Kenneth F. Galloway usually deals with the MOSFET, concentrating on Electron mobility and frequently concerns with Scattering.
The scientist’s investigation covers issues in Optoelectronics, Silicon carbide, Power MOSFET, MOSFET and Schottky diode. His Optoelectronics research is multidisciplinary, incorporating perspectives in Transistor and Absorbed dose, Irradiation. His Irradiation research is multidisciplinary, relying on both Monolayer, Heavy ion and Silicon.
Kenneth F. Galloway works mostly in the field of Silicon carbide, limiting it down to topics relating to Voltage and, in certain cases, Impact ionization, as a part of the same area of interest. The various areas that Kenneth F. Galloway examines in his Power MOSFET study include Power semiconductor device and Reliability. His work carried out in the field of MOSFET brings together such families of science as Laser and Atomic physics.
His primary areas of study are Optoelectronics, Silicon carbide, Diode, MOSFET and Schottky diode. His studies in Optoelectronics integrate themes in fields like Transistor, Bipolar junction transistor and Radiation, Absorbed dose. His study in Silicon carbide is interdisciplinary in nature, drawing from both High voltage and Voltage.
His MOSFET research is mostly focused on the topic Power MOSFET. His Power MOSFET study integrates concerns from other disciplines, such as Threshold voltage and Impact ionization. His research in Schottky diode intersects with topics in Schottky barrier and Leakage.
S.C. Witczak;R.D. Schrimpf;D.M. Fleetwood;K.F. Galloway
K. F. Galloway;M. Gaitan;T. J. Russell
S.C. Witczak;R.C. Lacoe;D.C. Mayer;D.M. Fleetwood
D.M. Schmidt;D.M. Fleetwood;R.D. Schrimpf;R.L. Pease
Arthur F. Witulski;Dennis R. Ball;Kenneth F. Galloway;Arto Javanainen
G.H. Johnson;J.M. Palau;C. Dachs;K.F. Galloway
S.C. Witczak;R.D. Schrimpf;K.F. Galloway;D.M. Fleetwood
S.J. Cai;Y.S. Tang;R. Li;Y.Y. Wei
M. Allenspach;C. Dachs;G.H. Johnson;R.D. Schrimpf
Jakob H. Hohl;Kenneth F. Galloway
D. R. Ball;J. M. Hutson;A. Javanainen;J.-M. Lauenstein
G.H. Johnson;J.H. Hohl;R.D. Schrimpf;K.F. Galloway
J.L. Titus;C.F. Wheatley;D.I. Burton;I. Mouret
J.R. Brews;M. Allenspach;R.D. Schrimpf;K.F. Galloway
S C. Witczak;R D. Schrimpf;K F. Galloway;D M. Fleetwood
L.W. Massengill;B.K. Choi;D.M. Fleetwood;R.D. Schrimpf
K.F. Galloway;R.D. Schrimpf
S.C. Witczak;K.F. Galloway;R.D. Schrimpf;J.L. Titus
M. Allenspach;J.R. Brews;I. Mouret;R.D. Schrimpf
M. Allenspach;I. Mouret;J.L. Titus;C.F. Wheatley
A. F. Witulski;R. Arslanbekov;A. Raman;R. D. Schrimpf
G.H. Johnson;R.D. Schrimpf;K.F. Galloway;R. Koga
Arto Javanainen;Kenneth F. Galloway;Christopher Nicklaw;Alexandre L. Bosser
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