Kenneth F. Galloway

What is he best known for?

The fields of study he is best known for:

• Semiconductor
• Electron
• MOSFET

Kenneth F. Galloway focuses on Optoelectronics, MOSFET, Oxide, Power MOSFET and Electrical engineering. The concepts of his Optoelectronics study are interwoven with issues in Ionizing radiation, Irradiation, Spontaneous emission and Transconductance. His research investigates the connection between Irradiation and topics such as Radiation that intersect with problems in Silicon.

Kenneth F. Galloway has researched MOSFET in several fields, including Electron mobility and Simulation. His Power MOSFET study combines topics in areas such as Field-effect transistor, Electronic engineering, Transient response and Power semiconductor device. His Field-effect transistor research integrates issues from Voltage drop and Electron.

His most cited work include:

• A Simple Model for Separating Interface and Oxide Charge Effects in MOS Device Characteristics (136 citations)
• Hardness assurance testing of bipolar junction transistors at elevated irradiation temperatures (109 citations)
• Space charge limited degradation of bipolar oxides at low electric fields (107 citations)

What are the main themes of his work throughout his whole career to date?

His main research concerns Optoelectronics, Power MOSFET, Irradiation, MOSFET and Electrical engineering. Kenneth F. Galloway performs integrative study on Optoelectronics and Oxide in his works. His Power MOSFET research includes themes of Breakdown voltage, Field-effect transistor, Power semiconductor device, Electronic engineering and Gate oxide.

The Field-effect transistor study combines topics in areas such as Time-dependent gate oxide breakdown and Reliability. His work in the fields of Irradiation, such as Ionizing radiation, overlaps with other areas such as Annealing. As a part of the same scientific study, Kenneth F. Galloway usually deals with the MOSFET, concentrating on Electron mobility and frequently concerns with Scattering.

He most often published in these fields:

• Optoelectronics (59.72%)
• Power MOSFET (32.87%)
• Irradiation (27.78%)

What were the highlights of his more recent work (between 2010-2021)?

• Optoelectronics (59.72%)
• Silicon carbide (6.94%)
• Power MOSFET (32.87%)

In recent papers he was focusing on the following fields of study:

The scientist’s investigation covers issues in Optoelectronics, Silicon carbide, Power MOSFET, MOSFET and Schottky diode. His Optoelectronics research is multidisciplinary, incorporating perspectives in Transistor and Absorbed dose, Irradiation. His Irradiation research is multidisciplinary, relying on both Monolayer, Heavy ion and Silicon.

Kenneth F. Galloway works mostly in the field of Silicon carbide, limiting it down to topics relating to Voltage and, in certain cases, Impact ionization, as a part of the same area of interest. The various areas that Kenneth F. Galloway examines in his Power MOSFET study include Power semiconductor device and Reliability. His work carried out in the field of MOSFET brings together such families of science as Laser and Atomic physics.

Between 2010 and 2021, his most popular works were:

• Laser- and Heavy Ion-Induced Charge Collection in Bulk FinFETs (52 citations)
• Single-Event Burnout Mechanisms in SiC Power MOSFETs (26 citations)
• Heavy Ion Induced Degradation in SiC Schottky Diodes: Bias and Energy Deposition Dependence (22 citations)

In his most recent research, the most cited papers focused on:

• Electron
• Semiconductor
• Transistor

His primary areas of study are Optoelectronics, Silicon carbide, Diode, MOSFET and Schottky diode. His studies in Optoelectronics integrate themes in fields like Transistor, Bipolar junction transistor and Radiation, Absorbed dose. His study in Silicon carbide is interdisciplinary in nature, drawing from both High voltage and Voltage.

His MOSFET research is mostly focused on the topic Power MOSFET. His Power MOSFET study integrates concerns from other disciplines, such as Threshold voltage and Impact ionization. His research in Schottky diode intersects with topics in Schottky barrier and Leakage.