What is he best known for?
The fields of study he is best known for:
- Electrical engineering
- Electron
- Semiconductor
Robert A. Reed mostly deals with Electronic engineering, Single event upset, CMOS, Static random-access memory and Upset.
His Electronic engineering research incorporates elements of Space environment, Computational physics, Electronic circuit and Sensitivity.
The Single event upset study combines topics in areas such as Nuclear physics, Ionization, Simulation and Order of magnitude.
His CMOS study is concerned with the field of Optoelectronics as a whole.
His Optoelectronics study integrates concerns from other disciplines, such as Heterojunction bipolar transistor, Gallium nitride and MOSFET.
His study in Static random-access memory is interdisciplinary in nature, drawing from both Node, Heavy ion, Irradiation and Muon.
His most cited work include:
- Monte Carlo Simulation of Single Event Effects (165 citations)
- The contribution of nuclear reactions to heavy ion single event upset cross-section measurements in a high-density SEU hardened SRAM (141 citations)
- Impact of Low-Energy Proton Induced Upsets on Test Methods and Rate Predictions (138 citations)
What are the main themes of his work throughout his whole career to date?
His primary scientific interests are in Optoelectronics, Electronic engineering, Electrical engineering, CMOS and Transistor.
His Optoelectronics study combines topics from a wide range of disciplines, such as Heterojunction bipolar transistor, Proton and Absorbed dose, Irradiation.
His Proton research includes elements of Ionization and Heterojunction.
His study explores the link between Irradiation and topics such as Radiation that cross with problems in Detector.
His work in the fields of Single event upset and Soft error overlaps with other areas such as Upset.
His CMOS course of study focuses on Static random-access memory and Neutron.
He most often published in these fields:
- Optoelectronics (42.68%)
- Electronic engineering (24.75%)
- Electrical engineering (21.97%)
What were the highlights of his more recent work (between 2015-2021)?
- Optoelectronics (42.68%)
- Irradiation (15.66%)
- Absorbed dose (9.34%)
In recent papers he was focusing on the following fields of study:
Robert A. Reed mainly investigates Optoelectronics, Irradiation, Absorbed dose, Diode and Silicon.
The concepts of his Optoelectronics study are interwoven with issues in Transistor, Silicon carbide and Logic gate.
He focuses mostly in the field of Transistor, narrowing it down to matters related to CMOS and, in some cases, X-ray.
His research integrates issues of Wide-bandgap semiconductor, Radiation, Transconductance and Proton in his study of Irradiation.
He has included themes like Ionization, Nand flash memory, Network layer and Static random-access memory in his Proton study.
In his research on the topic of Noise, Electronic engineering, Redundancy and Spontaneous emission is strongly related with Silicon on insulator.
Between 2015 and 2021, his most popular works were:
- Heavy-Ion-Induced Degradation in SiC Schottky Diodes: Incident Angle and Energy Deposition Dependence (14 citations)
- Charge Transport Mechanisms in Heavy-Ion Driven Leakage Current in Silicon Carbide Schottky Power Diodes (14 citations)
- Understanding Charge Collection Mechanisms in InGaAs FinFETs Using High-Speed Pulsed-Laser Transient Testing With Tunable Wavelength (11 citations)
In his most recent research, the most cited papers focused on:
- Electrical engineering
- Electron
- Semiconductor
His primary areas of investigation include Optoelectronics, Irradiation, Diode, Indium gallium arsenide and Transistor.
His study deals with a combination of Optoelectronics and Planar.
The various areas that Robert A. Reed examines in his Irradiation study include Gallium nitride, Logic gate, Dielectric and Photoluminescence.
His Diode research incorporates themes from Computational physics, Silicon carbide, Photodiode and Deposition.
His study on Subthreshold conduction and High-electron-mobility transistor is often connected to Coupling and Boltzmann equation as part of broader study in Transistor.
The study incorporates disciplines such as Electronic engineering and Microelectromechanical systems in addition to Piezoresistive effect.
This overview was generated by a machine learning system which analysed the scientist’s
body of work. If you have any feedback, you can
contact us
here.
