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D-Index & Metrics

Electronics and Electrical Engineering

D-Index
62
Citations
12364
World Ranking
1480
National Ranking
610

Overview

Robert A. Reed is affiliated with Vanderbilt University in the United States. Their research primarily falls within the field of Engineering, with a significant focus on Electrical and Electronic Engineering. The subfields also include Materials Chemistry, Plant Science, Electronic, Optical and Magnetic Materials, and Condensed Matter Physics.

The scientist's research topics cover multiple aspects of semiconductor and radiation effects, specifically:

  • Radiation Effects in Electronics
  • Semiconductor materials and devices
  • Integrated Circuits and Semiconductor Failure Analysis
  • Advancements in Semiconductor Devices and Circuit Design
  • Silicon Carbide Semiconductor Technologies
  • Electrostatic Discharge in Electronics
  • Ga2O3 and related materials

Robert A. Reed has published extensively in the venue IEEE Transactions on Nuclear Science, which accounts for the majority of their publications, along with several papers in arXiv (Cornell University), IEEE Transactions on Electron Devices, IEEE Transactions on Plasma Science, and Veterinary Anaesthesia and Analgesia.

Recent significant publications include:

  • "Effects of Breakdown Voltage on Single-Event Burnout Tolerance of High-Voltage SiC Power MOSFETs," 2021, IEEE Transactions on Nuclear Science
  • "Low-Energy Ion-Induced Single-Event Burnout in Gallium Oxide Schottky Diodes," 2023, IEEE Transactions on Nuclear Science
  • "Impact of Heavy-Ion Range on Single-Event Effects in Silicon Carbide Power Junction Barrier Schottky Diodes," 2023, IEEE Transactions on Nuclear Science
  • "LET and Voltage Dependence of Single-Event Burnout and Single-Event Leakage Current in High-Voltage SiC Power Devices," 2024, IEEE Transactions on Nuclear Science
  • "Inclusion of Radiation Environment Variability for Reliability Estimates for SiC Power MOSFETs," 2020, IEEE Transactions on Nuclear Science

Collaboration is a notable element in Robert A. Reed's research, with frequent co-authors including Ronald D. Schrimpf, En Xia Zhang, Daniel M. Fleetwood, Michael L. Alles, and Dennis R. Ball.

The focus of their work often revolves around the reliability and failure mechanisms of semiconductor devices, particularly in high-voltage power MOSFETs and Schottky diodes made from silicon carbide and gallium oxide materials. Their publications reflect in-depth studies on single-event burnout, leakage currents, and radiation environment variability in electronics.

Best Publications

  • Monte Carlo Simulation of Single Event Effects

    Robert A Weller;Marcus H Mendenhall;Robert A Reed;Ronald D Schrimpf

  • Impact of Low-Energy Proton Induced Upsets on Test Methods and Rate Predictions

    B.D. Sierawski;J.A. Pellish;R.A. Reed;R.D. Schrimpf

  • The contribution of nuclear reactions to heavy ion single event upset cross-section measurements in a high-density SEU hardened SRAM

    K.M. Warren;R.A. Weller;M.H. Mendenhall;R.A. Reed

  • Impact of Ion Energy and Species on Single Event Effects Analysis

    R.A. Reed;R.A. Weller;M.H. Mendenhall;J.-M. Lauenstein

  • Impact of Heavy Ion Energy and Nuclear Interactions on Single-Event Upset and Latchup in Integrated Circuits

    P.E. Dodd;J.R. Schwank;M.R. Shaneyfelt;J.A. Felix

  • Radiation Effects in Advanced Multiple Gate and Silicon-on-Insulator Transistors

    E. Simoen;M. Gaillardin;P. Paillet;R. A. Reed

  • Heavy ion and proton-induced single event multiple upset

    R.A. Reed;M.A. Carts;P.W. Marshall;C.J. Marshall

  • Muon-Induced Single Event Upsets in Deep-Submicron Technology

    Brian D Sierawski;Marcus H Mendenhall;Robert A Reed;Michael A Clemens

  • Mitigation Techniques for Single-Event-Induced Charge Sharing in a 90-nm Bulk CMOS Process

    O.A. Amusan;L.W. Massengill;M.P. Baze;B.L. Bhuva

  • Multiple-Bit Upset in 130 nm CMOS Technology

    A.D. Tipton;J.A. Pellish;R.A. Reed;R.D. Schrimpf

  • Emerging radiation hardness assurance (RHA) issues: a NASA approach for space flight programs

    K.A. LaBel;A.H. Johnston;J.L. Barth;R.A. Reed

  • A Single-Event-Hardened Phase-Locked Loop Fabricated in 130 nm CMOS

    T.D. Loveless;L.W. Massengill;B.L. Bhuva;W.T. Holman

  • Effect of Well and Substrate Potential Modulation on Single Event Pulse Shape in Deep Submicron CMOS

    S. DasGupta;A.F. Witulski;B.L. Bhuva;M.L. Alles

  • The Effect of Layout Topology on Single-Event Transient Pulse Quenching in a 65 nm Bulk CMOS Process

    J R Ahlbin;M J Gadlage;D R Ball;A W Witulski

  • Single event effects in circuit-hardened SiGe HBT logic at gigabit per second data rates

    P.W. Marshall;M.A. Carts;A. Campbell;D. McMorrow

  • Ion-Induced Energy Pulse Mechanism for Single-Event Burnout in High-Voltage SiC Power MOSFETs and Junction Barrier Schottky Diodes

    D. R. Ball;J. M. Hutson;A. Javanainen;J.-M. Lauenstein

  • Scaling Trends in SET Pulse Widths in Sub-100 nm Bulk CMOS Processes

    M J Gadlage;J R Ahlbin;B Narasimham;B L Bhuva

  • Autonomous bit error rate testing at multi-gbit/s rates implemented in a 5AM SiGe circuit for radiation effects self test (CREST)

    P. Marshall;M. Carts;S. Currie;R. Reed

  • Analysis of multiple bit upsets (MBU) in CMOS SRAM

    O. Musseau;F. Gardic;P. Roche;T. Corbiere

  • Characterizing SRAM Single Event Upset in Terms of Single and Multiple Node Charge Collection

    J.D. Black;D.R. Ball;W.H. Robinson;D.M. Fleetwood

  • Single-event effects ground testing and on-orbit rate prediction methods: the past, present, and future

    R.A. Reed;J. Kinnison;J.C. Pickel;S. Buchner

Frequent Co-Authors

Ronald D. Schrimpf
Ronald D. Schrimpf Vanderbilt University
Paul W. Marshall
Paul W. Marshall United States Naval Research Laboratory
Daniel M. Fleetwood
Daniel M. Fleetwood Vanderbilt University
John D. Cressler
John D. Cressler Georgia Institute of Technology
Lloyd W. Massengill
Lloyd W. Massengill Vanderbilt University
Guofu Niu
Guofu Niu Auburn University
Dale McMorrow
Dale McMorrow United States Naval Research Laboratory
Bharat L. Bhuva
Bharat L. Bhuva Vanderbilt University
Paul E. Dodd
Paul E. Dodd Sandia National Laboratories

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