The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Robert A. Reed sits on this spectrum.
This scientist: 436 publications — 78th percentile
78% of scientists in this discipline score the same or lower.
The last bar groups every scientist with 1,065 publications or more.
The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Robert A. Reed sits on this spectrum.
This scientist: 62 D-Index — 80th percentile
80% of scientists in this discipline score the same or lower.
The last bar groups every scientist with 111 D-Index or more.
Robert A. Reed is affiliated with Vanderbilt University in the United States. Their research primarily falls within the field of Engineering, with a significant focus on Electrical and Electronic Engineering. The subfields also include Materials Chemistry, Plant Science, Electronic, Optical and Magnetic Materials, and Condensed Matter Physics.
The scientist's research topics cover multiple aspects of semiconductor and radiation effects, specifically:
Robert A. Reed has published extensively in the venue IEEE Transactions on Nuclear Science, which accounts for the majority of their publications, along with several papers in arXiv (Cornell University), IEEE Transactions on Electron Devices, IEEE Transactions on Plasma Science, and Veterinary Anaesthesia and Analgesia.
Recent significant publications include:
Collaboration is a notable element in Robert A. Reed's research, with frequent co-authors including Ronald D. Schrimpf, En Xia Zhang, Daniel M. Fleetwood, Michael L. Alles, and Dennis R. Ball.
The focus of their work often revolves around the reliability and failure mechanisms of semiconductor devices, particularly in high-voltage power MOSFETs and Schottky diodes made from silicon carbide and gallium oxide materials. Their publications reflect in-depth studies on single-event burnout, leakage currents, and radiation environment variability in electronics.
Robert A Weller;Marcus H Mendenhall;Robert A Reed;Ronald D Schrimpf
B.D. Sierawski;J.A. Pellish;R.A. Reed;R.D. Schrimpf
K.M. Warren;R.A. Weller;M.H. Mendenhall;R.A. Reed
R.A. Reed;R.A. Weller;M.H. Mendenhall;J.-M. Lauenstein
P.E. Dodd;J.R. Schwank;M.R. Shaneyfelt;J.A. Felix
E. Simoen;M. Gaillardin;P. Paillet;R. A. Reed
R.A. Reed;M.A. Carts;P.W. Marshall;C.J. Marshall
Brian D Sierawski;Marcus H Mendenhall;Robert A Reed;Michael A Clemens
O.A. Amusan;L.W. Massengill;M.P. Baze;B.L. Bhuva
A.D. Tipton;J.A. Pellish;R.A. Reed;R.D. Schrimpf
K.A. LaBel;A.H. Johnston;J.L. Barth;R.A. Reed
T.D. Loveless;L.W. Massengill;B.L. Bhuva;W.T. Holman
S. DasGupta;A.F. Witulski;B.L. Bhuva;M.L. Alles
J R Ahlbin;M J Gadlage;D R Ball;A W Witulski
P.W. Marshall;M.A. Carts;A. Campbell;D. McMorrow
D. R. Ball;J. M. Hutson;A. Javanainen;J.-M. Lauenstein
M J Gadlage;J R Ahlbin;B Narasimham;B L Bhuva
P. Marshall;M. Carts;S. Currie;R. Reed
O. Musseau;F. Gardic;P. Roche;T. Corbiere
J.D. Black;D.R. Ball;W.H. Robinson;D.M. Fleetwood
R.A. Reed;J. Kinnison;J.C. Pickel;S. Buchner
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