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Dimitri Linten

Dimitri Linten

Overview

Dimitri Linten is affiliated with Imec in Belgium and conducts research primarily in the field of Engineering, with a strong focus on Electrical and Electronic Engineering. Their work spans multiple subfields including Condensed Matter Physics, Molecular Biology, Atomic and Molecular Physics, and Optics. The scientist's research topics concentrate largely on semiconductor materials and devices, advancements in semiconductor devices and circuit design, as well as radiation effects in electronics.

Linten's publication record includes a notable number of papers concentrated in several key venues. Most prominently, they have contributed extensively to the IEEE Transactions on Nuclear Science, with 45 publications there. Additional frequent publication venues include IEEE Transactions on Electron Devices, IEEE Transactions on Device and Materials Reliability, IEEE Electron Device Letters, and Optics Express.

Recent highlighted publications by Dimitri Linten include:

  • Radiation Effects in AlGaN/GaN HEMTs, 2022, IEEE Transactions on Nuclear Science
  • Stimuli-Responsive Polysaccharide Enveloped Liposome for Targeting and Penetrating Delivery of survivin-shRNA into Breast Tumor, 2020, ACS Applied Materials & Interfaces
  • Integrin αvβ3-targeted liposomal drug delivery system for enhanced lung cancer therapy, 2021, Colloids and Surfaces B Biointerfaces
  • Low-Energy Ion-Induced Single-Event Burnout in Gallium Oxide Schottky Diodes, 2023, IEEE Transactions on Nuclear Science
  • Co-delivery of paclitaxel and anti-VEGF siRNA by tripeptide lipid nanoparticle to enhance the anti-tumor activity for lung cancer therapy, 2020, Drug Delivery

Co-author collaborations have been an important aspect of Linten's research output. Frequent co-authors include Daniel M. Fleetwood, Ronald D. Schrimpf, Robert A. Reed, Michael L. Alles, and K. Li.

The scientist's main research topics are:

  • Semiconductor materials and devices
  • Advancements in Semiconductor Devices and Circuit Design
  • Radiation Effects in Electronics
  • Integrated Circuits and Semiconductor Failure Analysis
  • GaN-based semiconductor devices and materials
  • Ga2O3 and related materials
  • Photonic and Optical Devices

Best Publications

  • Design Issues and Considerations for Low-Cost 3-D TSV IC Technology

    G Van der Plas;P Limaye;I Loi;A Mercha

  • A 5 GHz fully integrated ESD-protected low-noise amplifier in 90 nm RF CMOS

    D. Linten;S. Thijs;M.I. Natarajan;P. Wambacq

  • Design Methodology for MuGFET ESD Protection Devices

    Steven Thijs;Dimitri Linten;David Eric Tremouilles

  • Comphy — A compact-physics framework for unified modeling of BTI

    Gerhard Rzepa;Jacopo Franco;Barry J. O'Sullivan;A. Subirats

  • Planar Bulk MOSFET s Versus FinFETs: An Analog/RF Perspective

    V. Subramanian;B. Parvais;J. Borremans;A. Mercha

  • Causes and consequences of the stochastic aspect of filamentary RRAM

    R. Degraeve;A. Fantini;N. Raghavan;L. Goux

  • Low-power 5 GHz LNA and VCO in 90 nm RF CMOS

    D. Linten;L. Aspemyr;W. Jeamsaksiri;J. Ramos

  • The Impact of X-Ray and Proton Irradiation on ${ m HfO}_2/{ m Hf}$ -Based Bipolar Resistive Memories

    J. S. Bi;Z. S. Han;E. X. Zhang;M. W. McCurdy

  • Laser- and Heavy Ion-Induced Charge Collection in Bulk FinFETs

    F. El-Mamouni;E. X. Zhang;N. D. Pate;N. Hooten

  • An ESD-Protected DC-to-6GHz 9.7mW LNA in 90nm Digital CMOS

    J. Borremans;P. Wambacq;D. Linten

  • Geometry Dependence of Total-Dose Effects in Bulk FinFETs

    I. Chatterjee;E. X. Zhang;B. L. Bhuva;R. A. Reed

  • A brief overview of gate oxide defect properties and their relation to MOSFET instabilities and device and circuit time-dependent variability

    Ben Kaczer;Jacopo Franco;Pieter Weckx;Philippe Roussel

  • Device and circuit-level analog performance trade-offs: a comparative study of planar bulk FETs versus FinFETs

    V. Subramanian;B. Parvais;J. Borremans;A. Mercha

  • Heavy-Ion-Induced Current Transients in Bulk and SOI FinFETs

    F. El-Mamouni;E. X. Zhang;D. R. Ball;B. Sierawski

  • Thin-film as enabling passive integration technology for RF SoC and SiP

    G. Carchon;Xiao Sun;G. Posada;D. Linten

  • A Physically Unclonable Function Using Soft Oxide Breakdown Featuring 0% Native BER and 51.8 fJ/bit in 40-nm CMOS

    Kai-Hsin Chuang;Erik Bury;Robin Degraeve;Ben Kaczer

  • Calibrated wafer-level HBM measurements for quasi-static and transient device analysis

    M. Scholz;S. Thijs;D. Linten;D. Tremouilles

  • The Potential of FinFETs for Analog and RF Circuit Applications

    P. Wambacq;B. Verbruggen;K. Scheir;J. Borremans

  • Neutron-Induced Failure in Silicon IGBTs, Silicon Super-Junction and SiC MOSFETs

    Alessio Griffoni;Jeroen van Duivenbode;Dimitri Linten;Eddy Simoen

  • Reliability and Variability of Advanced CMOS Devices at Cryogenic Temperatures

    A. Grill;E. Bury;J. Michl;S. Tyaginov

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