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Dimitri Linten

Dimitri Linten

Dimitri Linten publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Dimitri Linten sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

The last bar groups every scientist with 1,065 publications or more.

Dimitri Linten D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Dimitri Linten sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

The last bar groups every scientist with 111 D-Index or more.

Overview

Dimitri Linten is affiliated with Imec in Belgium and conducts research primarily in the field of Engineering, with a strong focus on Electrical and Electronic Engineering. Their work spans multiple subfields including Condensed Matter Physics, Molecular Biology, Atomic and Molecular Physics, and Optics. The scientist's research topics concentrate largely on semiconductor materials and devices, advancements in semiconductor devices and circuit design, as well as radiation effects in electronics.

Linten's publication record includes a notable number of papers concentrated in several key venues. Most prominently, they have contributed extensively to the IEEE Transactions on Nuclear Science, with 45 publications there. Additional frequent publication venues include IEEE Transactions on Electron Devices, IEEE Transactions on Device and Materials Reliability, IEEE Electron Device Letters, and Optics Express.

Recent highlighted publications by Dimitri Linten include:

  • Radiation Effects in AlGaN/GaN HEMTs, 2022, IEEE Transactions on Nuclear Science
  • Stimuli-Responsive Polysaccharide Enveloped Liposome for Targeting and Penetrating Delivery of survivin-shRNA into Breast Tumor, 2020, ACS Applied Materials & Interfaces
  • Integrin αvβ3-targeted liposomal drug delivery system for enhanced lung cancer therapy, 2021, Colloids and Surfaces B Biointerfaces
  • Low-Energy Ion-Induced Single-Event Burnout in Gallium Oxide Schottky Diodes, 2023, IEEE Transactions on Nuclear Science
  • Co-delivery of paclitaxel and anti-VEGF siRNA by tripeptide lipid nanoparticle to enhance the anti-tumor activity for lung cancer therapy, 2020, Drug Delivery

Co-author collaborations have been an important aspect of Linten's research output. Frequent co-authors include Daniel M. Fleetwood, Ronald D. Schrimpf, Robert A. Reed, Michael L. Alles, and K. Li.

The scientist's main research topics are:

  • Semiconductor materials and devices
  • Advancements in Semiconductor Devices and Circuit Design
  • Radiation Effects in Electronics
  • Integrated Circuits and Semiconductor Failure Analysis
  • GaN-based semiconductor devices and materials
  • Ga2O3 and related materials
  • Photonic and Optical Devices

Best Publications

  • Design Issues and Considerations for Low-Cost 3-D TSV IC Technology

    G Van der Plas;P Limaye;I Loi;A Mercha

  • A 5 GHz fully integrated ESD-protected low-noise amplifier in 90 nm RF CMOS

    D. Linten;S. Thijs;M.I. Natarajan;P. Wambacq

  • Design Methodology for MuGFET ESD Protection Devices

    Steven Thijs;Dimitri Linten;David Eric Tremouilles

  • Comphy — A compact-physics framework for unified modeling of BTI

    Gerhard Rzepa;Jacopo Franco;Barry J. O'Sullivan;A. Subirats

  • Planar Bulk MOSFET s Versus FinFETs: An Analog/RF Perspective

    V. Subramanian;B. Parvais;J. Borremans;A. Mercha

  • Causes and consequences of the stochastic aspect of filamentary RRAM

    R. Degraeve;A. Fantini;N. Raghavan;L. Goux

  • Low-power 5 GHz LNA and VCO in 90 nm RF CMOS

    D. Linten;L. Aspemyr;W. Jeamsaksiri;J. Ramos

  • The Impact of X-Ray and Proton Irradiation on ${ m HfO}_2/{ m Hf}$ -Based Bipolar Resistive Memories

    J. S. Bi;Z. S. Han;E. X. Zhang;M. W. McCurdy

  • Laser- and Heavy Ion-Induced Charge Collection in Bulk FinFETs

    F. El-Mamouni;E. X. Zhang;N. D. Pate;N. Hooten

  • An ESD-Protected DC-to-6GHz 9.7mW LNA in 90nm Digital CMOS

    J. Borremans;P. Wambacq;D. Linten

  • Geometry Dependence of Total-Dose Effects in Bulk FinFETs

    I. Chatterjee;E. X. Zhang;B. L. Bhuva;R. A. Reed

  • A brief overview of gate oxide defect properties and their relation to MOSFET instabilities and device and circuit time-dependent variability

    Ben Kaczer;Jacopo Franco;Pieter Weckx;Philippe Roussel

  • Device and circuit-level analog performance trade-offs: a comparative study of planar bulk FETs versus FinFETs

    V. Subramanian;B. Parvais;J. Borremans;A. Mercha

  • Heavy-Ion-Induced Current Transients in Bulk and SOI FinFETs

    F. El-Mamouni;E. X. Zhang;D. R. Ball;B. Sierawski

  • Thin-film as enabling passive integration technology for RF SoC and SiP

    G. Carchon;Xiao Sun;G. Posada;D. Linten

  • A Physically Unclonable Function Using Soft Oxide Breakdown Featuring 0% Native BER and 51.8 fJ/bit in 40-nm CMOS

    Kai-Hsin Chuang;Erik Bury;Robin Degraeve;Ben Kaczer

  • Calibrated wafer-level HBM measurements for quasi-static and transient device analysis

    M. Scholz;S. Thijs;D. Linten;D. Tremouilles

  • The Potential of FinFETs for Analog and RF Circuit Applications

    P. Wambacq;B. Verbruggen;K. Scheir;J. Borremans

  • Neutron-Induced Failure in Silicon IGBTs, Silicon Super-Junction and SiC MOSFETs

    Alessio Griffoni;Jeroen van Duivenbode;Dimitri Linten;Eddy Simoen

  • Reliability and Variability of Advanced CMOS Devices at Cryogenic Temperatures

    A. Grill;E. Bury;J. Michl;S. Tyaginov

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