The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Naoto Horiguchi sits on this spectrum.
This scientist: 563 publications — 89th percentile
89% of scientists in this discipline score the same or lower.
The last bar groups every scientist with 1,065 publications or more.
The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Naoto Horiguchi sits on this spectrum.
This scientist: 38 D-Index — 30th percentile
30% of scientists in this discipline score the same or lower.
The last bar groups every scientist with 111 D-Index or more.
Naoto Horiguchi is affiliated with Imec in Belgium and has a significant research footprint in the field of engineering, focusing primarily on electrical and electronic engineering. Their work spans various subfields including biomedical engineering, atomic and molecular physics and optics, materials chemistry, and electronic, optical, and magnetic materials.
The scientist's research topics cover several key areas such as semiconductor materials and devices, advancements in semiconductor devices and circuit design, integrated circuits and semiconductor failure analysis, nanowire synthesis and applications, thin-film transistor technologies, ferroelectric and negative capacitance devices, and semiconductor materials and interfaces.
Horiguchi has contributed to numerous papers, including the following notable recent publications:
Their frequent coauthors include:
Horiguchi's publications are often found in specific venues related to electrical engineering and semiconductor research, such as:
H. Mertens;R. Ritzenthaler;A. Hikavyy;M. S. Kim
J. Ryckaert;P. Schuddinck;P. Weckx;G. Bouche
H. Mertens;R. Ritzenthaler;A. Chasin;T. Schram
H. Mertens;R. Ritzenthaler;V. Pena;G. Santoro
J. Franco;B. Kaczer;M. Toledano-Luque;Ph. J. Roussel
S. B. Samavedam;J. Ryckaert;E. Beyne;K. Ronse
P. Weckx;M. Gupta;Y. Oniki;L.-A. Ragnarsson
A. Redolfi;S. Kubicek;R. Rooyackers;M.-S. Kim
S. Subramanian;M. Hosseini;T. Chiarella;S. Sarkar
M. Toledano-Luque;B. Kaczer;Ph.J. Roussel;T. Grasser
R. Ritzenthaler;H. Mertens;V. Pena;G. Santoro
Hao Yu;Marc Schaekers;Tom Schram;Erik Rosseel
Moonju Cho;Philippe Roussel;Ben Kaczer;Robin Degraeve
Naoto Horiguchi;Toshiro Futatsugi;Yoshiaki Nakata;Naoki Yokoyama
Anri Nakajima;Toshiro Futatsugi;Hiroshi Nakao;Tatsuya Usuki
K. Goto;S. Satoh;H. Ohta;S. Fukuta
Anri Nakajima;Toshiro Futatsugi;Naoto Horiguchi;Naoki Yokoyama
H. Yu;M. Schaekers;E. Rosseel;A. Peter
A. Veloso;T. Huynh-Bao;P. Matagne;D. Jang
Niamh Waldron;Gang Wang;Ngoc Duy Nguyen;Tommaso Orzali
Erik Rosseel;Harald Benjamin Profijt;Andriy Yakovitch Hikavyy;John Tolle
M. Garcia Bardon;Y. Sherazi;P. Schuddinck;D. Jang
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