What is he best known for?
The fields of study he is best known for:
- Semiconductor
- Electrical engineering
- Integrated circuit
Naoto Horiguchi spends much of his time researching Optoelectronics, Electronic engineering, Logic gate, MOSFET and Doping.
His Optoelectronics study combines topics in areas such as Metal gate, Nanotechnology and Electrical engineering.
His biological study spans a wide range of topics, including PMOS logic, Wafer and Germanium.
His work deals with themes such as Negative-bias temperature instability, Work function, Silicon-germanium, CMOS and Scaling, which intersect with Logic gate.
His MOSFET research is multidisciplinary, incorporating elements of Low voltage, NMOS logic and Fin.
His Doping research integrates issues from Quantum dot and Quantum dot laser.
His most cited work include:
- Gate-all-around MOSFETs based on vertically stacked horizontal Si nanowires in a replacement metal gate process on bulk Si substrates (73 citations)
- Impact of single charged gate oxide defects on the performance and scaling of nanoscaled FETs (73 citations)
- Microstructure and electrical properties of Sn nanocrystals in thin, thermally grown SiO2 layers formed via low energy ion implantation (67 citations)
What are the main themes of his work throughout his whole career to date?
Naoto Horiguchi mainly investigates Optoelectronics, Electronic engineering, Transistor, Logic gate and CMOS.
His Optoelectronics research incorporates themes from Metal gate, Electrical engineering and MOSFET.
Naoto Horiguchi focuses mostly in the field of Electronic engineering, narrowing it down to topics relating to NMOS logic and, in certain cases, Tin.
He has researched Transistor in several fields, including Dram, High-κ dielectric and Leakage.
His work in Logic gate covers topics such as Silicon which are related to areas like Fin.
His study in Doping is interdisciplinary in nature, drawing from both Ion implantation, Nanotechnology and Electrical resistivity and conductivity.
He most often published in these fields:
- Optoelectronics (61.50%)
- Electronic engineering (23.24%)
- Transistor (19.95%)
What were the highlights of his more recent work (between 2018-2021)?
- Optoelectronics (61.50%)
- Nanowire (11.03%)
- Scaling (7.51%)
In recent papers he was focusing on the following fields of study:
Naoto Horiguchi mostly deals with Optoelectronics, Nanowire, Scaling, Transistor and Metal gate.
His Optoelectronics study combines topics from a wide range of disciplines, such as Field-effect transistor, Nanosheet and Logic gate.
His biological study spans a wide range of topics, including NMOS logic, Condensed matter physics, Gallium arsenide, PMOS logic and Silicon-germanium.
His Nanowire research includes elements of Parasitic element and Stress.
His Metal gate study also includes fields such as
- Silicon which is related to area like Electrical resistivity and conductivity, Fin and Analytical chemistry,
- Negative-bias temperature instability together with Reliability and Leakage.
Naoto Horiguchi has included themes like Electronic circuit and Electronic engineering in his Node study.
Between 2018 and 2021, his most popular works were:
- On the Characterization and Separation of Trapping and Ferroelectric Behavior in HfZrO FET (13 citations)
- Vertical Nanowire and Nanosheet FETs: Device Features, Novel Schemes for Improved Process Control and Enhanced Mobility, Potential for Faster & More Energy Efficient Circuits (6 citations)
- Nanowire & nanosheet FETs for ultra-scaled, high-density logic and memory applications (6 citations)
In his most recent research, the most cited papers focused on:
- Semiconductor
- Electrical engineering
- Integrated circuit
His primary areas of investigation include Optoelectronics, Nanowire, Metal gate, Condensed matter physics and Silicon.
His study in the fields of Dram under the domain of Optoelectronics overlaps with other disciplines such as Stacking.
As part of one scientific family, Naoto Horiguchi deals mainly with the area of Nanowire, narrowing it down to issues related to the Nanosheet, and often Efficient energy use and Noise.
His Metal gate study combines topics in areas such as Threshold voltage, Negative-bias temperature instability and NMOS logic.
His Condensed matter physics research is multidisciplinary, incorporating perspectives in Gate oxide, Work function, Logic gate and Ferroelectricity.
His study on Germanium is often connected to Infrasound as part of broader study in Silicon.
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