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Praveen Raghavan

Praveen Raghavan

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
32
Citations
4143
World Ranking
6332
National Ranking
132

Overview

Praveen Raghavan is affiliated with KU Leuven in Belgium and specializes in the fields of Materials Science and Engineering. Their research output includes 76 publications in Materials Science and 71 in Engineering, reflecting a strong interdisciplinary approach. Within these fields, their work spans several subfields including Electrical and Electronic Engineering, Polymers and Plastics, Electronic, Optical and Magnetic Materials, Materials Chemistry, and Biomedical Engineering.

The scientist's research focuses on topics such as Advancements in Battery Materials, Supercapacitor Materials and Fabrication, Advanced Battery Materials and Technologies, Advanced Battery Technologies Research, Advanced Sensor and Energy Harvesting Materials, Conducting Polymers and Applications, and Polymer Composites and Self-Healing.

Frequent collaborators include Neethu T. M. Balakrishnan, Akhila Das, M. J. Jabeen Fatima, Jou-Hyeon Ahn, and Abhilash Pullanchiyodan.

Recent publications by Praveen Raghavan encompass the following:

  • Tannin as a renewable raw material for adhesive applications: a review, 2022, Materials Advances
  • Prospects for magnesium ion batteries: A comprehensive materials review, 2023, Coordination Chemistry Reviews
  • Titanium dioxide nano-ceramic filler in solid polymer electrolytes: Strategy towards suppressed dendrite formation and enhanced electrochemical performance for safe lithium ion batteries, 2021, Journal of Alloys and Compounds
  • Graphene: Chemistry and Applications for Lithium-Ion Batteries, 2022, Electrochem
  • Fabrication and challenges of 3D printed sensors for biomedical applications-Comprehensive review, 2024, Results in Engineering

Their scholarly contributions include a book titled Electrospinning for Advanced Energy Storage Applications, published by Springer Nature in 2021.

Praveen Raghavan has published extensively in venues such as Energy Advances, Materials Today Chemistry, Journal of Materials Research/Pratt's Guide to Venture Capital Sources, Materials Advances, and Coordination Chemistry Reviews.

Best Publications

  • Device Exploration of NanoSheet Transistors for Sub-7-nm Technology Node

    Doyoung Jang;Dmitry Yakimets;Geert Eneman;Pieter Schuddinck

  • Vertical GAAFETs for the Ultimate CMOS Scaling

    Dmitry Yakimets;Geert Eneman;Pieter Schuddinck;Trong Huynh Bao

  • Understanding Energy Efficiency Benefits of Carbon Nanotube Field-Effect Transistors for Digital VLSI

    Gage Hills;Marie Garcia Bardon;Gerben Doornbos;Dmitry Yakimets

  • Impact of Wire Geometry on Interconnect RC and Circuit Delay

    Ivan Ciofi;Antonino Contino;Philippe J. Roussel;Rogier Baert

  • Coarse-Grained Reconfigurable Array Architectures

    Bjorn De Sutter;Praveen Raghavan;Andy Lambrechts

  • Power aware FinFET and lateral nanosheet FET targeting for 3nm CMOS technology

    D. Yakimets;M. Garcia Bardon;D. Jang;P. Schuddinck

  • Self-heating on bulk FinFET from 14nm down to 7nm node

    D. Jang;E. Bury;R. Ritzenthaler;M. Garcia Bardon

  • Polarity control in WSe2 double-gate transistors

    Giovanni V. Resta;Surajit Sutar;Surajit Sutar;Yashwanth Balaji;Dennis Lin

  • Comparison of Reaction-Diffusion and Atomistic Trap-Based BTI Models for Logic Gates

    Halil Kukner;Seyab Khan;Pieter Weckx;Praveen Raghavan

  • Future Software-Defined Radio Platforms and Mapping Flows

    M. Palkovic;P. Raghavan;Min Li;A. Dejonghe

  • Defect-based methodology for workload-dependent circuit lifetime projections - Application to SRAM

    P. Weckx;B. Kaczer;M. Toledano-Luque;T. Grasser

  • Bias temperature instability analysis of FinFET based SRAM cells

    Seyab Khan;Innocent Agbo;Said Hamdioui;Halil Kukner

  • A unified instruction set programmable architecture for multi-standard advanced forward error correction

    F. Naessens;B. Bougard;S. Bressinck;L. Hollevoet

  • A 200Mbps+ 2.14nJ/b digital baseband multi processor system-on-chip for SDRs

    V. Derudder;B. Bougard;A. Couvreur;A. Dewilde

  • Power breakdown analysis for a heterogeneous NoC platform running a video application

    A. Lambrechts;P. Raghavan;A. Leroy;G. Talavera

  • Extreme scaling enabled by 5 tracks cells: Holistic design-device co-optimization for FinFETs and lateral nanowires

    M. Garcia Bardon;Y. Sherazi;P. Schuddinck;D. Jang

  • Implications of BTI-Induced Time-Dependent Statistics on Yield Estimation of Digital Circuits

    Pieter Weckx;Ben Kaczer;Maria Toledano-Luque;Praveen Raghavan

  • Design and benchmarking of hybrid CMOS-Spin Wave Device Circuits compared to 10nm CMOS

    Odysseas Zografos;Bart Soree;Adrien Vaysset;Stefan Cosemans

  • Dimensioning for power and performance under 10nm: The limits of FinFETs scaling

    M. Garcia Bardon;P. Schuddinck;P. Raghavan;D. Jang

  • Stacked nanosheet fork architecture for SRAM design and device co-optimization toward 3nm

    P. Weckx;J. Ryckaert;V. Putcha;A. De Keersgieter

  • Vertical device architecture for 5nm and beyond: Device & circuit implications

    A. V-Y Thean;D. Yakimets;T. Huynh Bao;P. Schuddinck

  • BTI impact on logical gates in nano-scale CMOS technology

    Seyab Khan;Said Hamdioui;Halil Kukner;Praveen Raghavan

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