World's Best Scientists 2026 revealed!
Praveen Raghavan

Praveen Raghavan

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
32
Citations
4143
World Ranking
6331
National Ranking
131

Praveen Raghavan publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Praveen Raghavan sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 251 publications — 45th percentile

45% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Praveen Raghavan D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Praveen Raghavan sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 32 D-Index — 10th percentile

10% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Praveen Raghavan is affiliated with KU Leuven in Belgium and specializes in the fields of Materials Science and Engineering. Their research output includes 76 publications in Materials Science and 71 in Engineering, reflecting a strong interdisciplinary approach. Within these fields, their work spans several subfields including Electrical and Electronic Engineering, Polymers and Plastics, Electronic, Optical and Magnetic Materials, Materials Chemistry, and Biomedical Engineering.

The scientist's research focuses on topics such as Advancements in Battery Materials, Supercapacitor Materials and Fabrication, Advanced Battery Materials and Technologies, Advanced Battery Technologies Research, Advanced Sensor and Energy Harvesting Materials, Conducting Polymers and Applications, and Polymer Composites and Self-Healing.

Frequent collaborators include Neethu T. M. Balakrishnan, Akhila Das, M. J. Jabeen Fatima, Jou-Hyeon Ahn, and Abhilash Pullanchiyodan.

Recent publications by Praveen Raghavan encompass the following:

  • Tannin as a renewable raw material for adhesive applications: a review, 2022, Materials Advances
  • Prospects for magnesium ion batteries: A comprehensive materials review, 2023, Coordination Chemistry Reviews
  • Titanium dioxide nano-ceramic filler in solid polymer electrolytes: Strategy towards suppressed dendrite formation and enhanced electrochemical performance for safe lithium ion batteries, 2021, Journal of Alloys and Compounds
  • Graphene: Chemistry and Applications for Lithium-Ion Batteries, 2022, Electrochem
  • Fabrication and challenges of 3D printed sensors for biomedical applications-Comprehensive review, 2024, Results in Engineering

Their scholarly contributions include a book titled Electrospinning for Advanced Energy Storage Applications, published by Springer Nature in 2021.

Praveen Raghavan has published extensively in venues such as Energy Advances, Materials Today Chemistry, Journal of Materials Research/Pratt's Guide to Venture Capital Sources, Materials Advances, and Coordination Chemistry Reviews.

Best Publications

  • Device Exploration of NanoSheet Transistors for Sub-7-nm Technology Node

    Doyoung Jang;Dmitry Yakimets;Geert Eneman;Pieter Schuddinck

  • Vertical GAAFETs for the Ultimate CMOS Scaling

    Dmitry Yakimets;Geert Eneman;Pieter Schuddinck;Trong Huynh Bao

  • Understanding Energy Efficiency Benefits of Carbon Nanotube Field-Effect Transistors for Digital VLSI

    Gage Hills;Marie Garcia Bardon;Gerben Doornbos;Dmitry Yakimets

  • Impact of Wire Geometry on Interconnect RC and Circuit Delay

    Ivan Ciofi;Antonino Contino;Philippe J. Roussel;Rogier Baert

  • Coarse-Grained Reconfigurable Array Architectures

    Bjorn De Sutter;Praveen Raghavan;Andy Lambrechts

  • Power aware FinFET and lateral nanosheet FET targeting for 3nm CMOS technology

    D. Yakimets;M. Garcia Bardon;D. Jang;P. Schuddinck

  • Self-heating on bulk FinFET from 14nm down to 7nm node

    D. Jang;E. Bury;R. Ritzenthaler;M. Garcia Bardon

  • Polarity control in WSe2 double-gate transistors

    Giovanni V. Resta;Surajit Sutar;Surajit Sutar;Yashwanth Balaji;Dennis Lin

  • Comparison of Reaction-Diffusion and Atomistic Trap-Based BTI Models for Logic Gates

    Halil Kukner;Seyab Khan;Pieter Weckx;Praveen Raghavan

  • Future Software-Defined Radio Platforms and Mapping Flows

    M. Palkovic;P. Raghavan;Min Li;A. Dejonghe

  • Defect-based methodology for workload-dependent circuit lifetime projections - Application to SRAM

    P. Weckx;B. Kaczer;M. Toledano-Luque;T. Grasser

  • Bias temperature instability analysis of FinFET based SRAM cells

    Seyab Khan;Innocent Agbo;Said Hamdioui;Halil Kukner

  • A unified instruction set programmable architecture for multi-standard advanced forward error correction

    F. Naessens;B. Bougard;S. Bressinck;L. Hollevoet

  • A 200Mbps+ 2.14nJ/b digital baseband multi processor system-on-chip for SDRs

    V. Derudder;B. Bougard;A. Couvreur;A. Dewilde

  • Power breakdown analysis for a heterogeneous NoC platform running a video application

    A. Lambrechts;P. Raghavan;A. Leroy;G. Talavera

  • Extreme scaling enabled by 5 tracks cells: Holistic design-device co-optimization for FinFETs and lateral nanowires

    M. Garcia Bardon;Y. Sherazi;P. Schuddinck;D. Jang

  • Implications of BTI-Induced Time-Dependent Statistics on Yield Estimation of Digital Circuits

    Pieter Weckx;Ben Kaczer;Maria Toledano-Luque;Praveen Raghavan

  • Design and benchmarking of hybrid CMOS-Spin Wave Device Circuits compared to 10nm CMOS

    Odysseas Zografos;Bart Soree;Adrien Vaysset;Stefan Cosemans

  • Dimensioning for power and performance under 10nm: The limits of FinFETs scaling

    M. Garcia Bardon;P. Schuddinck;P. Raghavan;D. Jang

  • Stacked nanosheet fork architecture for SRAM design and device co-optimization toward 3nm

    P. Weckx;J. Ryckaert;V. Putcha;A. De Keersgieter

  • Vertical device architecture for 5nm and beyond: Device & circuit implications

    A. V-Y Thean;D. Yakimets;T. Huynh Bao;P. Schuddinck

  • BTI impact on logical gates in nano-scale CMOS technology

    Seyab Khan;Said Hamdioui;Halil Kukner;Praveen Raghavan

Frequent Co-Authors

Aaron Thean
Aaron Thean National University of Singapore
Wim Dehaene
Wim Dehaene KU Leuven
Iuliana Radu
Iuliana Radu Taiwan Semiconductor Manufacturing Company (Taiwan)
Said Hamdioui
Said Hamdioui Delft University of Technology

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