World's Best Scientists 2026 revealed!
Lars-Erik Wernersson

Lars-Erik Wernersson

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
52
Citations
9693
World Ranking
2540
National Ranking
34

Materials Science

D-Index
52
Citations
9628
World Ranking
9585
National Ranking
104

Lars-Erik Wernersson publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Lars-Erik Wernersson sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 410 publications — 75th percentile

75% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Lars-Erik Wernersson D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Lars-Erik Wernersson sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 52 D-Index — 64th percentile

64% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Lars-Erik Wernersson is affiliated with Lund University in Sweden and has made significant contributions in the field of Engineering, with a primary focus on Electrical and Electronic Engineering. Their research spans multiple subfields, including Biomedical Engineering, Materials Chemistry, Atomic and Molecular Physics and Optics, as well as Surfaces, Coatings and Films.

The primary research topics covered by Wernersson include:

  • Semiconductor materials and devices
  • Advancements in Semiconductor Devices and Circuit Design
  • Ferroelectric and Negative Capacitance Devices
  • Nanowire Synthesis and Applications
  • Advanced Memory and Neural Computing
  • Integrated Circuits and Semiconductor Failure Analysis
  • Electronic and Structural Properties of Oxides

Wernersson has published extensively in several frequent publication venues, including:

  • IEEE Electron Device Letters
  • Applied Physics Letters
  • Advanced Electronic Materials
  • ACS Applied Electronic Materials
  • Applied Surface Science

Some of the recent papers authored or co-authored by Lars-Erik Wernersson are:

  • "Tuning oxygen vacancies and resistive switching properties in ultra-thin HfO2 RRAM via TiN bottom electrode and interface engineering" (2021), Applied Surface Science
  • "Nanowire Tunnel FET with Simultaneously Reduced Subthermionic Subthreshold Swing and Off-Current due to Negative Capacitance and Voltage Pinning Effects" (2020), Nano Letters
  • "High-density logic-in-memory devices using vertical indium arsenide nanowires on silicon" (2021), Nature Electronics
  • "Reduced annealing temperature for ferroelectric HZO on InAs with enhanced polarization" (2020), Applied Physics Letters
  • "High-Performance Vertical III-V Nanowire MOSFETs on Si With gm > 3 mS/μm" (2020), IEEE Electron Device Letters

Their frequent co-authors include:

  • Johannes Svensson
  • Zhongyunshen Zhu
  • Anton E. O. Persson
  • Mamidala Saketh Ram
  • Erik Lind

Best Publications

  • Vertical high-mobility wrap-gated InAs nanowire transistor

    T. Bryllert;L.-E. Wernersson;L.E. Froberg;L. Samuelson

  • Giant, level-dependent g factors in InSb nanowire quantum dots.

    Henrik A Nilsson;Philippe Caroff;Claes Thelander;Marcus Larsson

  • III–V compound semiconductor transistors—from planar to nanowire structures

    Heike Riel;Lars-Erik Wernersson;Minghwei Hong;Jesús A. del Alamo

  • Vertical wrap-gated nanowire transistors

    Tomas Bryllert;Tomas Bryllert;Lars-Erik Wernersson;Truls Löwgren;Lars Samuelson

  • Vertical Enhancement-Mode InAs Nanowire Field-Effect Transistor With 50-nm Wrap Gate

    C. Thelander;L.E. FrobergFroberg;C. Rehnstedt;L. Samuelson

  • High-quality InAs/InSb nanowire heterostructures grown by metal-organic vapor-phase epitaxy

    Philippe Caroff;Jakob Birkedal Wagner;Kimberly A. Dick;Henrik A. Nilsson

  • InAs/GaSb Heterostructure Nanowires for Tunnel Field-Effect Transistors

    B. Mattias Borg;Kimberly A. Dick;Bahram Ganjipour;Mats-Erik Pistol

  • InSb heterostructure nanowires: MOVPE growth under extreme lattice mismatch.

    Philippe Caroff;Maria E Messing;B Mattias Borg;Kimberly A Dick

  • Improved subthreshold slope in an InAs nanowire heterostructure field-effect transistor.

    Erik Lind;Ann I. Persson;Lars Samuelson;Lars-Erik Wernersson

  • Diameter-dependent photocurrent in InAsSb nanowire infrared photodetectors

    Johannes Svensson;Nicklas Anttu;Neimantas Vainorius;B. Mattias Borg

  • High-Current GaSb/InAs(Sb) Nanowire Tunnel Field-Effect Transistors

    A. W. Dey;B. M. Borg;B. Ganjipour;M. Ek

  • Synthesis and properties of antimonide nanowires

    B Mattias Borg;Lars-Erik Wernersson

  • Vertical InAs nanowire wrap gate transistors with f(t) > 7 GHz and f(max) > 20 GHz.

    M. Egard;S. Johansson;A.-C. Johansson;K.-M. Persson

  • High current density Esaki tunnel diodes based on GaSb-InAsSb heterostructure nanowires.

    Bahram Ganjipour;Anil W. Dey;B. Mattias Borg;Martin Ek

  • Development of a Vertical Wrap-Gated InAs FET

    C. Thelander;C. Rehnstedt;L.E. Froberg;E. Lind

  • Vertical InAs/GaAsSb/GaSb tunneling field-effect transistor on Si with S = 48 mV/decade and I on = 10 μA/μm for I off = 1 nA/μm at V ds = 0.3 V

    E. Memisevic;J. Svensson;M. Hellenbrand;E. Lind

  • III-V Nanowires—Extending a Narrowing Road

    L-E Wernersson;C Thelander;E Lind;L Samuelson

  • GaAs/GaSb nanowire heterostructures grown by MOVPE

    Mattias Jeppsson;Kimberly A. Dick;Jakob Birkedal Wagner;Philippe Caroff

  • Single InAs/GaSb nanowire low-power CMOS inverter.

    Anil W. Dey;Johannes Svensson;B. Mattias Borg;Martin Ek

  • Partially depleted SOI MOSFETs under uniaxial tensile strain

    Wei Zhao;Jianli He;R.E. Belford;L.-E. Wernersson

Frequent Co-Authors

Erik Lind
Erik Lind Lund University
Lars Samuelson
Lars Samuelson Lund University
Claes Thelander
Claes Thelander Lund University
Philippe Caroff
Philippe Caroff Microsoft (United States)
Kimberly A. Dick
Kimberly A. Dick Lund University
Werner Seifert
Werner Seifert Lund University
Magnus T. Borgström
Magnus T. Borgström Lund University
Anders Mikkelsen
Anders Mikkelsen Lund University
Hongqi Xu
Hongqi Xu Peking University
Alan Seabaugh
Alan Seabaugh University of Notre Dame

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Related Online Degrees & Career Pathways

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