World's Best Scientists 2026 revealed!
Lars-Erik Wernersson

Lars-Erik Wernersson

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
52
Citations
9693
World Ranking
2540
National Ranking
34

Materials Science

D-Index
52
Citations
9628
World Ranking
9587
National Ranking
104

Overview

Lars-Erik Wernersson is affiliated with Lund University in Sweden and has made significant contributions in the field of Engineering, with a primary focus on Electrical and Electronic Engineering. Their research spans multiple subfields, including Biomedical Engineering, Materials Chemistry, Atomic and Molecular Physics and Optics, as well as Surfaces, Coatings and Films.

The primary research topics covered by Wernersson include:

  • Semiconductor materials and devices
  • Advancements in Semiconductor Devices and Circuit Design
  • Ferroelectric and Negative Capacitance Devices
  • Nanowire Synthesis and Applications
  • Advanced Memory and Neural Computing
  • Integrated Circuits and Semiconductor Failure Analysis
  • Electronic and Structural Properties of Oxides

Wernersson has published extensively in several frequent publication venues, including:

  • IEEE Electron Device Letters
  • Applied Physics Letters
  • Advanced Electronic Materials
  • ACS Applied Electronic Materials
  • Applied Surface Science

Some of the recent papers authored or co-authored by Lars-Erik Wernersson are:

  • "Tuning oxygen vacancies and resistive switching properties in ultra-thin HfO2 RRAM via TiN bottom electrode and interface engineering" (2021), Applied Surface Science
  • "Nanowire Tunnel FET with Simultaneously Reduced Subthermionic Subthreshold Swing and Off-Current due to Negative Capacitance and Voltage Pinning Effects" (2020), Nano Letters
  • "High-density logic-in-memory devices using vertical indium arsenide nanowires on silicon" (2021), Nature Electronics
  • "Reduced annealing temperature for ferroelectric HZO on InAs with enhanced polarization" (2020), Applied Physics Letters
  • "High-Performance Vertical III-V Nanowire MOSFETs on Si With gm > 3 mS/μm" (2020), IEEE Electron Device Letters

Their frequent co-authors include:

  • Johannes Svensson
  • Zhongyunshen Zhu
  • Anton E. O. Persson
  • Mamidala Saketh Ram
  • Erik Lind

Best Publications

  • Vertical high-mobility wrap-gated InAs nanowire transistor

    T. Bryllert;L.-E. Wernersson;L.E. Froberg;L. Samuelson

  • Giant, level-dependent g factors in InSb nanowire quantum dots.

    Henrik A Nilsson;Philippe Caroff;Claes Thelander;Marcus Larsson

  • III–V compound semiconductor transistors—from planar to nanowire structures

    Heike Riel;Lars-Erik Wernersson;Minghwei Hong;Jesús A. del Alamo

  • Vertical wrap-gated nanowire transistors

    Tomas Bryllert;Tomas Bryllert;Lars-Erik Wernersson;Truls Löwgren;Lars Samuelson

  • Vertical Enhancement-Mode InAs Nanowire Field-Effect Transistor With 50-nm Wrap Gate

    C. Thelander;L.E. FrobergFroberg;C. Rehnstedt;L. Samuelson

  • High-quality InAs/InSb nanowire heterostructures grown by metal-organic vapor-phase epitaxy

    Philippe Caroff;Jakob Birkedal Wagner;Kimberly A. Dick;Henrik A. Nilsson

  • InAs/GaSb Heterostructure Nanowires for Tunnel Field-Effect Transistors

    B. Mattias Borg;Kimberly A. Dick;Bahram Ganjipour;Mats-Erik Pistol

  • InSb heterostructure nanowires: MOVPE growth under extreme lattice mismatch.

    Philippe Caroff;Maria E Messing;B Mattias Borg;Kimberly A Dick

  • Improved subthreshold slope in an InAs nanowire heterostructure field-effect transistor.

    Erik Lind;Ann I. Persson;Lars Samuelson;Lars-Erik Wernersson

  • Diameter-dependent photocurrent in InAsSb nanowire infrared photodetectors

    Johannes Svensson;Nicklas Anttu;Neimantas Vainorius;B. Mattias Borg

  • High-Current GaSb/InAs(Sb) Nanowire Tunnel Field-Effect Transistors

    A. W. Dey;B. M. Borg;B. Ganjipour;M. Ek

  • Synthesis and properties of antimonide nanowires

    B Mattias Borg;Lars-Erik Wernersson

  • Vertical InAs nanowire wrap gate transistors with f(t) > 7 GHz and f(max) > 20 GHz.

    M. Egard;S. Johansson;A.-C. Johansson;K.-M. Persson

  • High current density Esaki tunnel diodes based on GaSb-InAsSb heterostructure nanowires.

    Bahram Ganjipour;Anil W. Dey;B. Mattias Borg;Martin Ek

  • Development of a Vertical Wrap-Gated InAs FET

    C. Thelander;C. Rehnstedt;L.E. Froberg;E. Lind

  • Vertical InAs/GaAsSb/GaSb tunneling field-effect transistor on Si with S = 48 mV/decade and I on = 10 μA/μm for I off = 1 nA/μm at V ds = 0.3 V

    E. Memisevic;J. Svensson;M. Hellenbrand;E. Lind

  • III-V Nanowires—Extending a Narrowing Road

    L-E Wernersson;C Thelander;E Lind;L Samuelson

  • GaAs/GaSb nanowire heterostructures grown by MOVPE

    Mattias Jeppsson;Kimberly A. Dick;Jakob Birkedal Wagner;Philippe Caroff

  • Single InAs/GaSb nanowire low-power CMOS inverter.

    Anil W. Dey;Johannes Svensson;B. Mattias Borg;Martin Ek

  • Partially depleted SOI MOSFETs under uniaxial tensile strain

    Wei Zhao;Jianli He;R.E. Belford;L.-E. Wernersson

Frequent Co-Authors

Erik Lind
Erik Lind Lund University
Lars Samuelson
Lars Samuelson Lund University
Claes Thelander
Claes Thelander Lund University
Philippe Caroff
Philippe Caroff Microsoft (United States)
Kimberly A. Dick
Kimberly A. Dick Lund University
Werner Seifert
Werner Seifert Lund University
Magnus T. Borgström
Magnus T. Borgström Lund University
Anders Mikkelsen
Anders Mikkelsen Lund University
Hongqi Xu
Hongqi Xu Peking University
Alan Seabaugh
Alan Seabaugh University of Notre Dame

If you think any of the details on this page are incorrect, let us know.

Report an issue

We appreciate your kind effort to assist us to improve this page, it would be helpful providing us with as much detail as possible in the text box below:

Related Online Degrees & Career Pathways

For those interested in expanding their knowledge in Electronics and Electrical Engineering, flexible learning options are increasingly important. Many students seek bachelor degree programs for working adults, which allow professionals to balance study with their careers without sacrificing progress.

Beyond engineering, interdisciplinary fields like instructional design offer promising career avenues. Earning a master's in instructional design can equip graduates with skills to develop technical training programs or educational technology tools relevant to engineering sectors.

Competency and skills-based learning are gaining traction in technical education. Several competency based universities focus on demonstrated skills rather than time spent in class, allowing students to accelerate their degrees by proving practical expertise.

Online education has also become more accessible for diverse populations. Specialized programs and support services are available through online schools for military spouses, ensuring education continuity despite frequent relocations.

Best Scientists Citing Lars-Erik Wernersson

Trending Scientists