World's Best Scientists 2026 revealed!

D-Index & Metrics

Materials Science

D-Index
79
Citations
22646
World Ranking
2823
National Ranking
904

Johnny C. Ho publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Johnny C. Ho sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 304 publications — 61st percentile

61% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Johnny C. Ho D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Johnny C. Ho sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 79 D-Index — 79th percentile

79% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Johnny C. Ho is affiliated with the City University of Hong Kong in China. Their research primarily spans the fields of Engineering and Materials Science, with a focus on Electrical and Electronic Engineering, Materials Chemistry, and Renewable Energy, Sustainability and the Environment. Additional involvement is evident in Biomedical Engineering and Polymers and Plastics.

The scientist's published work centers around several main topics, including:

  • Perovskite Materials and Applications
  • 2D Materials and Applications
  • Electrocatalysts for Energy Conversion
  • Advanced Memory and Neural Computing
  • Quantum Dots Synthesis And Properties
  • Advanced battery technologies research
  • Advanced Photocatalysis Techniques

Johnny C. Ho has contributed to various frequent publication venues, including:

  • Advanced Functional Materials
  • Small
  • Advanced Materials
  • Nature Communications
  • Advanced Optical Materials

Frequent co-authors collaborating with Johnny C. Ho include:

  • You Meng
  • SenPo Yip
  • Wei Wang
  • Zhengxun Lai
  • Pengshan Xie

Recent scholarly articles authored or co-authored by Johnny C. Ho include:

  • "Recent progress on the long-term stability of hydrogen evolution reaction electrocatalysts," published in 2022 in InfoMat
  • "Infrared Photodetectors Based on 2D Materials and Nanophotonics," published in 2021 in Advanced Functional Materials
  • "2D WS2: From Vapor Phase Synthesis to Device Applications," published in 2020 in Advanced Electronic Materials
  • "Enhancing Performance of a GaAs/AlGaAs/GaAs Nanowire Photodetector Based on the Two-Dimensional Electron-Hole Tube Structure," published in 2020 in Nano Letters
  • "Electronic/Optoelectronic Memory Device Enabled by Tellurium-based 2D van der Waals Heterostructure for in-Sensor Reservoir Computing at the Optical Communication Band," published in 2023 in Advanced Materials

Johnny C. Ho's research intersects with advanced technologies involving 2D materials, electrocatalysts, energy conversion methods, and memory devices. This multidisciplinary approach integrates materials science with electronic and optical engineering.

Best Publications

  • Nanowire active-matrix circuitry for low-voltage macroscale artificial skin

    Kuniharu Takei;Toshitake Takahashi;Toshitake Takahashi;Johnny C. Ho;Johnny C. Ho;Hyunhyub Ko

  • Three-dimensional nanopillar-array photovoltaics on low-cost and flexible substrates

    Zhiyong Fan;Haleh Razavi;Haleh Razavi;Jae Won Do;Jae Won Do;Aimee Moriwaki;Aimee Moriwaki

  • Wafer-scale assembly of highly ordered semiconductor nanowire arrays by contact printing.

    Zhiyong Fan;Johnny C. Ho;Zachery A. Jacobson;Roie Yerushalmi

  • Wafer-Scale Assembly of Semiconductor Nanowire Arrays by Contact Printing

    Zhiyong Fan;Johnny C. Ho;Zachery A. Jacobson;Roie Yerushalmi

  • Recent advances in layered double hydroxide electrocatalysts for the oxygen evolution reaction

    Zhengyang Cai;Xiuming Bu;Ping Wang;Johnny C. Ho

  • Diameter-dependent electron mobility of InAs nanowires.

    Alexandra C. Ford;Johnny C. Ho;Johnny C. Ho;Johnny C. Ho;Yu-Lun Chueh;Yu-Lun Chueh;Yu-Lun Chueh;Yu-Chih Tseng;Yu-Chih Tseng;Yu-Chih Tseng

  • Toward the Development of Printable Nanowire Electronics and Sensors

    Zhiyong Fan;Johnny C. Ho;Toshitake Takahashi;Roie Yerushalmi

  • Controlled nanoscale doping of semiconductors via molecular monolayers.

    Johnny C. Ho;Johnny C. Ho;Roie Yerushalmi;Roie Yerushalmi;Zachery A. Jacobson;Zachery A. Jacobson;Zhiyong Fan;Zhiyong Fan

  • Interface Engineering for High‐Performance Top‐Gated MoS2 Field‐Effect Transistors

    Xuming Zou;Jingli Wang;Chung Hua Chiu;Yun Wu

  • Infrared Photodetectors Based on 2D Materials and Nanophotonics

    Unknown

  • Hierarchical Nanostructures: Design for Sustainable Water Splitting

    Ming Fang;Guofa Dong;Guofa Dong;Renjie Wei;Johnny C. Ho

  • Effects of electron concentration on the optical absorption edge of InN

    J. Wu;W. Walukiewicz;S. X. Li;R. Armitage

  • Large-scale, heterogeneous integration of nanowire arrays for image sensor circuitry

    Zhiyong Fan;Johnny C. Ho;Johnny C. Ho;Zachery A. Jacobson;Zachery A. Jacobson;Haleh Razavi

  • Modulating electronic structure of CoP electrocatalysts towards enhanced hydrogen evolution by Ce chemical doping in both acidic and basic media

    Wei Gao;Wei Gao;Ming Yan;Ho-Yuen Cheung;Zhaoming Xia

  • Single InAs Nanowire Room-Temperature Near-Infrared Photodetectors

    Jinshui Miao;Weida Hu;Weida Hu;Nan Guo;Nan Guo;Zhenyu Lu;Zhenyu Lu

  • Hierarchical NiMo-based 3D electrocatalysts for highly-efficient hydrogen evolution in alkaline conditions

    Ming Fang;Wei Gao;Wei Gao;Guofa Dong;Zhaoming Xia

  • Insight into the Electrochemical Activation of Carbon-Based Cathodes for Hydrogen Evolution Reaction

    Guofa Dong;Ming Fang;Hongtao Wang;Senpo Yip

  • Wafer-scale synthesis of monolayer WS2 for high-performance flexible photodetectors by enhanced chemical vapor deposition

    Changyong Lan;Changyong Lan;Ziyao Zhou;Zhifei Zhou;Chun Li

  • Regulating the surface of nanoceria and its applications in heterogeneous catalysis

    Yuanyuan Ma;Wei Gao;Wei Gao;Zhiyun Zhang;Sai Zhang

  • High-Responsivity Graphene/InAs Nanowire Heterojunction Near-Infrared Photodetectors with Distinct Photocurrent On/Off Ratios

    Jinshui Miao;Jinshui Miao;Weida Hu;Weida Hu;Nan Guo;Nan Guo;Zhenyu Lu;Zhenyu Lu

  • Hydrogen gas sensor based on metal oxide nanoparticles decorated graphene transistor.

    Zhangyuan Zhang;Xuming Zou;Lei Xu;Lei Liao

  • Anomalous and Highly Efficient InAs Nanowire Phototransistors Based on Majority Carrier Transport at Room Temperature

    Nan Guo;Weida Hu;Lei Liao;Sen Po Yip

Frequent Co-Authors

Ning Han
Ning Han KU Leuven
Ali Javey
Ali Javey University of California, Berkeley
Zhiyong Fan
Zhiyong Fan Hong Kong University of Science and Technology
Lei Liao
Lei Liao Hunan University
Yu-Lun Chueh
Yu-Lun Chueh National Tsing Hua University
Hao Lin
Hao Lin University of Electronic Science and Technology of China
Wei Gao
Wei Gao Soochow University
Weida Hu
Weida Hu Chinese Academy of Sciences
Yongquan Qu
Yongquan Qu Xi'an Jiaotong University
Yunfa Chen
Yunfa Chen Chinese Academy of Sciences

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