2026 Lei Liao: Materials Science Researcher – H-Index, Publications & Awards

Discipline name	D-Index	World Ranking	Current World Ranking	National Ranking	Current National Ranking	Publications	Citations
Materials Science	97	1218	1166	379	376	312	33514

Lei Liao publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Lei Liao sits on this spectrum.

50 publications 1,163+

This scientist: 312 publications — 62nd percentile

62% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Lei Liao D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Lei Liao sits on this spectrum.

40 D-Index 165+

This scientist: 97 D-Index — 91st percentile

91% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Lei Liao is a researcher affiliated with Hunan University in China. Their work primarily focuses on engineering and materials science, contributing extensively to the fields of materials chemistry and electrical and electronic engineering.

The scientist's research spans various subfields including biomedical engineering, atomic and molecular physics and optics, as well as electronic, optical, and magnetic materials. This multidisciplinary approach supports investigations into a wide range of material properties and device applications.

Lei Liao's recent publications illustrate their active engagement in advanced materials research. Notable papers include:

Efficient strain modulation of 2D materials via polymer encapsulation (2020, Nature Communications)
Van der Waals epitaxial growth of air-stable CrSe2 nanosheets with thickness-tunable magnetic order (2021, Nature Materials)
Recent Progress on Electrical and Optical Manipulations of Perovskite Photodetectors (2021, Advanced Science)
Doping-free complementary WSe2 circuit via van der Waals metal integration (2020, Nature Communications)
Transferred van der Waals metal electrodes for sub-1-nm MoS2 vertical transistors (2021, Nature Electronics)

The researcher frequently publishes in journals such as the SSRN Electronic Journal, Nano Letters, Nature Communications, arXiv (Cornell University), and IEEE Electron Device Letters.

Lei Liao collaborates regularly with several coauthors, including:

Xingqiang Liu
Yuan Liu
Xuming Zou
Guoli Li
Quanyang Tao

The scientist's work largely covers topics related to:

2D materials and applications
Graphene research and applications
Perovskite materials and applications
Nanowire synthesis and applications
MXene and MAX phase materials
Advanced memory and neural computing
Conducting polymers and applications

Best Publications

Approaching the Schottky-Mott limit in van der Waals metal-semiconductor junctions.

Yuan Liu;Yuan Liu;Jian Guo;Enbo Zhu;Lei Liao

1966
Citations
High-speed graphene transistors with a self-aligned nanowire gate

Lei Liao;Yung Chen Lin;Mingqiang Bao;Rui Cheng

1254
Citations
Two-dimensional antimonene single crystals grown by van der Waals epitaxy.

Jianping Ji;Xiufeng Song;Jizi Liu;Zhong Yan

973
Citations
New Porous Crystals of Extended Metal-Catecholates

Mohamad Hmadeh;Zheng Lu;Zheng Liu;Felipe Gandara

884
Citations
Covalent Organic Frameworks with High Charge Carrier Mobility

Shun Wan;Felipe Gándara;Atsushi Asano;Hiroyasu Furukawa

845
Citations
Ultrasensitive and Broadband MoS2 Photodetector Driven by Ferroelectrics

Xudong Wang;Xudong Wang;Peng Wang;Jianlu Wang;Weida Hu

835
Citations
Graphene: An Emerging Electronic Material

Nathan O. Weiss;Hailong Zhou;Lei Liao;Yuan Liu

835
Citations
Plasmon resonance enhanced multicolour photodetection by graphene

Yuan Liu;Rui Cheng;Lei Liao;Hailong Zhou

724
Citations
High Mobility MoS2 Transistor with Low Schottky Barrier Contact by Using Atomic Thick h-BN as a Tunneling Layer

Jingli Wang;Qian Yao;Chun Wei Huang;Xuming Zou

552
Citations
Metal-Ion-Modified Black Phosphorus with Enhanced Stability and Transistor Performance.

Zhinan Guo;Zhinan Guo;Si Chen;Zhongzheng Wang;Zhongzheng Wang;Zhenyu Yang

516
Citations
Size Dependence of Gas Sensitivity of ZnO Nanorods

L. Liao;H. B. Lu;J. C. Li;H. He

489
Citations
Multifunctional CuO nanowire devices: P-type field effect transistors and CO gas sensors

Lei Liao;Zhou Zhang;Bin Yan;Zhe Zheng

447
Citations
Surface Plasmon‐Enhanced Photodetection in Few Layer MoS2 Phototransistors with Au Nanostructure Arrays

Jinshui Miao;Weida Hu;Youliang Jing;Wenjin Luo

432
Citations
Monolayer atomic crystal molecular superlattices

Chen Wang;Qiyuan He;Udayabagya Halim;Yuanyue Liu

422
Citations
Ultrafast growth of single-crystal graphene assisted by a continuous oxygen supply

Xiaozhi Xu;Zhihong Zhang;Lu Qiu;Jianing Zhuang

420
Citations
Direct growth of SnO2nanorod array electrodes for lithium-ion batteries

Jinping Liu;Yuanyuan Li;Xintang Huang;Xintang Huang;Ruimin Ding

402
Citations
Efficient strain modulation of 2D materials via polymer encapsulation.

Zhiwei Li;Yawei Lv;Liwang Ren;Jia Li

390
Citations
Recent Advances in Optoelectronic Devices Based on 2D Materials and Their Heterostructures

Jinbing Cheng;Chunlan Wang;Xuming Zou;Lei Liao;Lei Liao

389
Citations
Interface Engineering for High‐Performance Top‐Gated MoS2 Field‐Effect Transistors

Xuming Zou;Jingli Wang;Chung Hua Chiu;Yun Wu

358
Citations
Millimeter-Size Single-Crystal Graphene by Suppressing Evaporative Loss of Cu During Low Pressure Chemical Vapor Deposition

Shanshan Chen;Hengxing Ji;Harry Chou;Qiongyu Li

358
Citations
High-frequency self-aligned graphene transistors with transferred gate stacks.

Rui Cheng;Jingwei Bai;Lei Liao;Hailong Zhou

329
Citations