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Rising Stars
2025

D-Index & Metrics

Rising Stars

D-Index
40
Citations
6341
World Ranking
656
National Ranking
229

Engineering and Technology

D-Index
41
Citations
7030
World Ranking
6950
National Ranking
1276

Lei Yin publication distribution in Engineering and Technology in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Engineering and Technology in 2026. The highlighted bar marks where Lei Yin sits on this spectrum.

38–47 publications: 20 scientists 48–57 publications: 35 scientists 58–67 publications: 96 scientists 68–77 publications: 135 scientists 78–87 publications: 190 scientists 88–97 publications: 259 scientists 98–107 publications: 283 scientists 108–117 publications: 369 scientists 118–127 publications: 341 scientists 128–137 publications: 386 scientists 138–147 publications: 372 scientists 148–157 publications: 457 scientists 158–167 publications: 415 scientists 168–177 publications: 407 scientists 178–187 publications: 421 scientists 188–197 publications: 378 scientists 198–207 publications: 403 scientists 208–217 publications: 317 scientists 218–227 publications: 346 scientists 228–237 publications: 321 scientists 238–247 publications: 260 scientists 248–257 publications: 280 scientists 258–267 publications: 240 scientists 268–277 publications: 214 scientists 278–287 publications: 242 scientists 288–297 publications: 203 scientists 298–307 publications: 166 scientists 308–317 publications: 154 scientists 318–327 publications: 175 scientists 328–337 publications: 159 scientists 338–347 publications: 99 scientists 348–357 publications: 131 scientists 358–367 publications: 106 scientists 368–377 publications: 118 scientists 378–387 publications: 97 scientists 388–397 publications: 108 scientists 398–407 publications: 82 scientists 408–417 publications: 71 scientists 418–427 publications: 64 scientists 428–437 publications: 55 scientists 438–447 publications: 54 scientists 448–457 publications: 60 scientists 458–467 publications: 47 scientists 468–477 publications: 40 scientists 478–487 publications: 30 scientists 488–497 publications: 29 scientists 498–507 publications: 38 scientists 508–517 publications: 40 scientists 518–527 publications: 32 scientists 528–537 publications: 23 scientists 538–547 publications: 28 scientists 548–557 publications: 23 scientists 558–567 publications: 19 scientists 568–577 publications: 16 scientists 578–587 publications: 17 scientists 588–597 publications: 18 scientists 598–607 publications: 22 scientists 608–617 publications: 15 scientists 618–627 publications: 9 scientists 628–637 publications: 11 scientists 638–647 publications: 21 scientists 648–657 publications: 12 scientists 658–667 publications: 9 scientists 668–677 publications: 11 scientists 678–687 publications: 9 scientists 688–697 publications: 6 scientists 698–707 publications: 14 scientists 708–717 publications: 7 scientists 718–727 publications: 8 scientists 728–737 publications: 10 scientists 738–747 publications: 9 scientists 748–757 publications: 5 scientists 758–767 publications: 5 scientists 768–777 publications: 11 scientists 778–787 publications: 7 scientists 788–797 publications: 2 scientists 798–803 publications: 4 scientists 804+ publications: 100 scientists
38 publications 804+

This scientist: 66 publications — 1st percentile

1% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 804 publications or more.

Lei Yin D-index placement in Engineering and Technology in 2026

The chart shows the D-index (discipline H-index) distribution of Engineering and Technology scientists ranked by Research.com in 2026. The highlighted bar marks where Lei Yin sits on this spectrum.

30 D-Index: 59 scientists 31 D-Index: 114 scientists 32 D-Index: 129 scientists 33 D-Index: 189 scientists 34 D-Index: 200 scientists 35 D-Index: 262 scientists 36 D-Index: 311 scientists 37 D-Index: 312 scientists 38 D-Index: 350 scientists 39 D-Index: 385 scientists 40 D-Index: 348 scientists 41 D-Index: 362 scientists 42 D-Index: 426 scientists 43 D-Index: 380 scientists 44 D-Index: 310 scientists 45 D-Index: 341 scientists 46 D-Index: 301 scientists 47 D-Index: 306 scientists 48 D-Index: 271 scientists 49 D-Index: 246 scientists 50 D-Index: 210 scientists 51 D-Index: 253 scientists 52 D-Index: 213 scientists 53 D-Index: 221 scientists 54 D-Index: 195 scientists 55 D-Index: 186 scientists 56 D-Index: 170 scientists 57 D-Index: 167 scientists 58 D-Index: 166 scientists 59 D-Index: 144 scientists 60 D-Index: 152 scientists 61 D-Index: 141 scientists 62 D-Index: 138 scientists 63 D-Index: 131 scientists 64 D-Index: 118 scientists 65 D-Index: 114 scientists 66 D-Index: 119 scientists 67 D-Index: 95 scientists 68 D-Index: 87 scientists 69 D-Index: 77 scientists 70 D-Index: 89 scientists 71 D-Index: 69 scientists 72 D-Index: 54 scientists 73 D-Index: 46 scientists 74 D-Index: 55 scientists 75 D-Index: 54 scientists 76 D-Index: 49 scientists 77 D-Index: 53 scientists 78 D-Index: 46 scientists 79 D-Index: 28 scientists 80 D-Index: 39 scientists 81 D-Index: 36 scientists 82 D-Index: 24 scientists 83 D-Index: 26 scientists 84 D-Index: 36 scientists 85 D-Index: 18 scientists 86 D-Index: 25 scientists 87 D-Index: 19 scientists 88 D-Index: 26 scientists 89 D-Index: 27 scientists 90 D-Index: 23 scientists 91 D-Index: 15 scientists 92 D-Index: 12 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 13 scientists 97 D-Index: 13 scientists 98 D-Index: 9 scientists 99 D-Index: 7 scientists 100 D-Index: 7 scientists 101 D-Index: 8 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 9 scientists 105 D-Index: 6 scientists 106 D-Index: 9 scientists 107+ D-Index: 99 scientists
30 D-Index 107+

This scientist: 41 D-Index — 31st percentile

31% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 107 D-Index or more.

Research.com Recognitions

  • 2025 - Research.com Rising Stars Award

Overview

Lei Yin is affiliated with Wuhan University in China and has contributed extensively to the fields of Materials Science and Engineering. Their research primarily spans several specialized subfields, including Materials Chemistry, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Cellular and Molecular Neuroscience, and Atomic and Molecular Physics, and Optics.

Their work covers a variety of main topics, notably:

  • 2D Materials and Applications
  • Advanced Memory and Neural Computing
  • Ferroelectric and Negative Capacitance Devices
  • Multiferroics and related materials
  • Photoreceptor and optogenetics research
  • MXene and MAX Phase Materials
  • Graphene research and applications

Lei Yin's recent publications include contributions to several high-profile venues. Some notable works are:

  • "Optoelectronic Synaptic Devices for Neuromorphic Computing," 2020, published in Advanced Intelligent Systems
  • "Tunable Room-Temperature Ferromagnetism in Two-Dimensional Cr2Te3," 2020, published in Nano Letters
  • "Optically Stimulated Synaptic Devices Based on the Hybrid Structure of Silicon Nanomembrane and Perovskite," 2020, published in Nano Letters
  • "Emerging 2D Memory Devices for In-Memory Computing," 2021, published in Advanced Materials
  • "Recent Advances in 2D Materials for Photodetectors," 2021, published in Advanced Electronic Materials

The frequent coauthors associated with Lei Yin include:

  • Ruiqing Cheng
  • Jun He
  • Yao Wen
  • Baoxing Zhai
  • Jian Jiang

Prominent publication venues where Lei Yin has published include:

  • Advanced Materials
  • Nano Letters
  • ACS Nano
  • Nature Communications
  • Science Bulletin

The body of work reflects a focus on two-dimensional materials and their applications, with a considerable number of publications related to memory devices and neural computing. Lei Yin's research includes the development and study of optoelectronic synaptic devices, ferromagnetic materials at room temperature, and emerging technologies in 2D memory and photodetection.

Best Publications

  • Tunable GaTe-MoS2 van der Waals p–n Junctions with Novel Optoelectronic Performance

    Feng Wang;Zhenxing Wang;Kai Xu;Fengmei Wang

  • Recent Progress in CVD Growth of 2D Transition Metal Dichalcogenides and Related Heterostructures

    Yu Zhang;Yuyu Yao;Yuyu Yao;Marshet Getaye Sendeku;Marshet Getaye Sendeku;Lei Yin;Lei Yin

  • High-performance, multifunctional devices based on asymmetric van der Waals heterostructures

    Ruiqing Cheng;Ruiqing Cheng;Feng Wang;Lei Yin;Lei Yin;Zhenxing Wang

  • High-Performance Ultraviolet Photodetector Based on a Few-Layered 2D NiPS3 Nanosheet

    Junwei Chu;Junwei Chu;Fengmei Wang;Fengmei Wang;Lei Yin;Lei Yin;Le Lei

  • High-Performance Near-Infrared Photodetector Based on Ultrathin Bi2O2Se Nanosheets

    Jie Li;Jie Li;Zhenxing Wang;Yao Wen;Yao Wen;Junwei Chu

  • 2D library beyond graphene and transition metal dichalcogenides: a focus on photodetection

    Feng Wang;Zhenxing Wang;Lei Yin;Lei Yin;Ruiqing Cheng;Ruiqing Cheng

  • Tunable Room-Temperature Ferromagnetism in Two-Dimensional Cr2Te3.

    Yao Wen;Zhehong Liu;Yu Zhang;Congxin Xia

  • Ultrathin Magnetic 2D Single-Crystal CrSe

    Yu Zhang;Junwei Chu;Lei Yin;Lei Yin;Tofik Ahmed Shifa

  • Two-Dimensional Non-Layered Materials: Synthesis, Properties and Applications

    Feng Wang;Feng Wang;Zhenxing Wang;Tofik Ahmed Shifa;Tofik Ahmed Shifa;Yao Wen;Yao Wen

  • Ultrasensitive Phototransistors Based on Few-Layered HfS2.

    Kai Xu;Zhenxing Wang;Feng Wang;Yun Huang

  • Nonvolatile infrared memory in MoS2/PbS van der Waals heterostructures

    Qisheng Wang;Qisheng Wang;Yao Wen;Kaiming Cai;Ruiqing Cheng

  • Sub-10 nm Nanopattern Architecture for 2D Material Field-Effect Transistors

    Kai Xu;Dongxue Chen;Dongxue Chen;Dongxue Chen;Fengyou Yang;Zhenxing Wang

  • Synthesis, properties and applications of 2D layered MIIIXVI (M = Ga, In; X = S, Se, Te) materials

    Kai Xu;Kai Xu;Lei Yin;Lei Yin;Yun Huang;Yun Huang;Tofik Ahmed Shifa;Tofik Ahmed Shifa

  • Emerging 2D Memory Devices for In-Memory Computing.

    Lei Yin;Ruiqing Cheng;Yao Wen;Chuansheng Liu

  • Recent Advances in 2D Materials for Photodetectors

    Jian Jiang;Yao Wen;Hao Wang;Lei Yin

  • Ultrathin Single‐Crystalline CdTe Nanosheets Realized via Van der Waals Epitaxy

    Ruiqing Cheng;Ruiqing Cheng;Yao Wen;Yao Wen;Lei Yin;Lei Yin;Fengmei Wang;Fengmei Wang

  • Sub-millimeter-Scale Growth of One-Unit-Cell-Thick Ferrimagnetic Cr2S3 Nanosheets

    Junwei Chu;Yu Zhang;Yao Wen;Ruixi Qiao

  • Synthesis, properties and applications of 2D non-graphene materials

    Feng Wang;Zhenxing Wang;Qisheng Wang;Fengmei Wang

  • Edge-Epitaxial Growth of 2D NbS2 -WS2 Lateral Metal-Semiconductor Heterostructures.

    Yu Zhang;Lei Yin;Lei Yin;Junwei Chu;Junwei Chu;Tofik Ahmed Shifa;Tofik Ahmed Shifa

  • Gate‐Coupling‐Enabled Robust Hysteresis for Nonvolatile Memory and Programmable Rectifier in Van der Waals Ferroelectric Heterojunctions

    Wenhao Huang;Feng Wang;Lei Yin;Lei Yin;Ruiqing Cheng;Ruiqing Cheng

  • Ultrahigh sensitive MoTe2 phototransistors driven by carrier tunneling

    Lei Yin;Xueying Zhan;Kai Xu;Feng Wang

  • Configuration-Dependent Electrically Tunable Van der Waals Heterostructures Based on MoTe2/MoS2

    Feng Wang;Lei Yin;Zhen Xing Wang;Kai Xu

  • Integrated High-Performance Infrared Phototransistor Arrays Composed of Nonlayered PbS–MoS2 Heterostructures with Edge Contacts

    Yao Wen;Lei Yin;Peng He;Zhenxing Wang

Frequent Co-Authors

Jun He
Jun He Nottingham Trent University
Zhenxing Wang
Zhenxing Wang National Center for Nanoscience and Technology, China
Feng Wang
Feng Wang University of California, Berkeley
Kai Xu
Kai Xu National Center for Nanoscience and Technology
Fengmei Wang
Fengmei Wang Beijing University of Chemical Technology
Xueying Zhan
Xueying Zhan National Center for Nanoscience and Technology
Jie Xiong
Jie Xiong University of Electronic Science and Technology of China
Chong-Xin Shan
Chong-Xin Shan Zhengzhou University
Yanrong Li
Yanrong Li University of Electronic Science and Technology of China
Jia Liu
Jia Liu Tsinghua University

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