World's Best Scientists 2026 revealed!

D-Index & Metrics

Materials Science

D-Index
44
Citations
7829
World Ranking
12021
National Ranking
3297

Congxin Xia publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Congxin Xia sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 262 publications — 50th percentile

50% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Congxin Xia D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Congxin Xia sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 44 D-Index — 7th percentile

7% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Best Publications

  • Highly Polarization-Sensitive, Broadband, Self-Powered Photodetector Based on Graphene/PdSe2/Germanium Heterojunction

    Di Wu;Jiawen Guo;Juan Du;Congxin Xia

  • Half-unit-cell ZnIn2S4 monolayer with sulfur vacancies for photocatalytic hydrogen evolution

    Chun Du;Qian Zhang;Zhaoyong Lin;Bo Yan

  • Universality of electronic characteristics and photocatalyst applications in the two-dimensional Janus transition metal dichalcogenides

    Congxin Xia;Wenqi Xiong;Juan Du;Tianxing Wang

  • Tunable Room-Temperature Ferromagnetism in Two-Dimensional Cr2Te3.

    Yao Wen;Zhehong Liu;Yu Zhang;Congxin Xia

  • Two-dimensional n -InSe/ p -GeSe(SnS) van der Waals heterojunctions: High carrier mobility and broadband performance

    Cong-xin Xia;Juan Du;Xiao-wei Huang;Wen-bo Xiao

  • A type-II GeSe/SnS heterobilayer with a suitable direct gap, superior optical absorption and broad spectrum for photovoltaic applications

    Congxin Xia;Juan Du;Wenqi Xiong;Yu Jia

  • Enhanced rectification, transport property and photocurrent generation of multilayer ReSe2/MoS2 p–n heterojunctions

    Xiaoting Wang;Le Huang;Yuting Peng;Nengjie Huo

  • Various Structures of 2D Transition-Metal Dichalcogenides and Their Applications

    Zhongming Wei;Bo Li;Congxin Xia;Yu Cui

  • Interlayer coupling effects on Schottky barrier in the arsenene-graphene van der Waals heterostructures

    Congxin Xia;Bin Xue;Tianxing Wang;Yuting Peng

  • Tuning the band gap of hematite α-Fe2O3 by sulfur doping

    Congxin Xia;Congxin Xia;Yu Jia;Meng Tao;Qiming Zhang

  • Elastic, electronic and optical properties of the two-dimensional PtX 2 (X = S, Se, and Te) monolayer

    Juan Du;Peng Song;Lizhen Fang;Tianxing Wang

  • Recent advances in optoelectronic properties and applications of two-dimensional metal chalcogenides

    Congxin Xia;Jingbo Li

  • Effects of strain and electric field on electronic structures and Schottky barrier in graphene and SnS hybrid heterostructures

    Wenqi Xiong;Congxin Xia;Xu Zhao;Tianxing Wang

  • The characteristics of n- and p-type dopants in SnS2 monolayer nanosheets

    Congxin Xia;Congxin Xia;Yuting Peng;Heng Zhang;Tianxing Wang

  • Direct Wide Bandgap 2D GeSe2 Monolayer toward Anisotropic UV Photodetection

    Yong Yan;Wenqi Xiong;Shasha Li;Kai Zhao

  • Composition-tunable 2D SnSe2(1−x)S2x alloys towards efficient bandgap engineering and high performance (opto)electronics

    Yan Wang;Le Huang;Bo Li;Jimin Shang

  • Enhancement of hole mobility in InSe monolayer via an InSe and black phosphorus heterostructure.

    Yi-min Ding;Jun-jie Shi;Congxin Xia;Min Zhang

  • Interlayer coupling and external electric field tunable electronic properties of a 2D type-I α-tellurene/MoS2 heterostructure

    Wenli Zhang;Wenli Zhang;Dahu Chang;Qiang Gao;Chunyao Niu

  • The feasibility of tunable p-type Mg doping in a GaN monolayer nanosheet

    Congxin Xia;Congxin Xia;Yuting Peng;Shuyi Wei;Yu Jia

  • Two-dimensional transition-metal dichalcogenides-based ferromagnetic van der Waals heterostructures

    Juan Du;Congxin Xia;Wenqi Xiong;Tianxing Wang

  • Tuning the electronic structures and magnetism of two-dimensional porous C2N via transition metal embedding

    Juan Du;Congxin Xia;Wenqi Xiong;Xu Zhao

Frequent Co-Authors

Yu Jia
Yu Jia Henan University
Jingbo Li
Jingbo Li South China Normal University
Zhongming Wei
Zhongming Wei Chinese Academy of Sciences
Zhenxing Wang
Zhenxing Wang National Center for Nanoscience and Technology, China
Jun He
Jun He Nottingham Trent University
Lin Yang
Lin Yang Henan Normal University
Sefaattin Tongay
Sefaattin Tongay Arizona State University
Xinfeng Liu
Xinfeng Liu National Center for Nanoscience and Technology, China
Dapeng Wu
Dapeng Wu Henan Normal University
Hui-Xiong Deng
Hui-Xiong Deng Chinese Academy of Sciences

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