His primary areas of investigation include Condensed matter physics, Nanotechnology, Band gap, Graphene and Ab initio. His studies deal with areas such as Field-effect transistor and Silicene as well as Condensed matter physics. The various areas that Jing Lu examines in his Nanotechnology study include Optoelectronics, Electronic structure, Stacking and Density functional theory.
His Optoelectronics course of study focuses on Metal and Electronic properties. Jing Lu usually deals with Graphene and limits it to topics linked to Semiconductor and Silicon, Exciton and Spectral line. Jing Lu interconnects Monolayer and Electric field in the investigation of issues within Ab initio.
Condensed matter physics, Optoelectronics, Nanotechnology, Density functional theory and Monolayer are his primary areas of study. Jing Lu has researched Condensed matter physics in several fields, including Ab initio and Graphene, Silicene. His Optoelectronics research incorporates themes from Field-effect transistor, International Technology Roadmap for Semiconductors and Transistor.
Jing Lu studied Nanotechnology and Metal that intersect with Dispersion. His studies in Density functional theory integrate themes in fields like Fermi level, Ferromagnetism, Molecular physics, Atom and Atomic physics. His Monolayer research includes elements of Electron mobility, Schottky barrier and Electronic band structure.
Jing Lu mainly focuses on Monolayer, Optoelectronics, Transistor, Semiconductor and Field-effect transistor. He combines subjects such as Electron mobility, Condensed matter physics, Band gap, Ohmic contact and Density functional theory with his study of Monolayer. His work on Ferromagnetism as part of his general Condensed matter physics study is frequently connected to Boundary, thereby bridging the divide between different branches of science.
His work carried out in the field of Density functional theory brings together such families of science as Fermi level and Adsorption. His Optoelectronics study combines topics in areas such as International Technology Roadmap for Semiconductors and Ab initio. His Field-effect transistor research is multidisciplinary, relying on both Schottky barrier and Engineering physics.
The scientist’s investigation covers issues in Monolayer, Optoelectronics, Anode, Transistor and Field-effect transistor. The study incorporates disciplines such as Ohmic contact and Density functional theory in addition to Monolayer. His research integrates issues of Electrode Contact, Electronic structure, Graphene and Electronics in his study of Ohmic contact.
His study in Density functional theory is interdisciplinary in nature, drawing from both Fermi level and Adsorption. His Transistor research is multidisciplinary, incorporating elements of Quantum tunnelling and Phosphorene. As part of the same scientific family, Jing Lu usually focuses on Field-effect transistor, concentrating on Condensed matter physics and intersecting with Metal.
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Tunable Bandgap in Silicene and Germanene
Zeyuan Ni;Qihang Liu;Kechao Tang;Jiaxin Zheng.
Nano Letters (2012)
Rise of silicene: A competitive 2D material
Jijun Zhao;Hongsheng Liu;Zhiming Yu;Ruge Quhe;Ruge Quhe.
Progress in Materials Science (2016)
Large-Scale Separation of Metallic and Semiconducting Single-Walled Carbon Nanotubes
Yutaka Maeda;‡ Shin-ichi Kimura;Makoto Kanda;Yuya Hirashima.
Journal of the American Chemical Society (2005)
Tuning Electronic Structure of Bilayer MoS2 by Vertical Electric Field: A First-Principles Investigation
Qihang Liu;Linze Li;Yafei Li;Zhengxiang Gao.
Journal of Physical Chemistry C (2012)
Tunable and sizable band gap in silicene by surface adsorption
Ruge Quhe;Ruixiang Fei;Qihang Liu;Jiaxin Zheng.
Scientific Reports (2012)
Structural and electronic properties of metal-encapsulated silicon clusters in a large size range.
Jing Lu;Shigeru Nagase.
Physical Review Letters (2003)
Quasiparticle energies and excitonic effects of the two-dimensional carbon allotrope graphdiyne: Theory and experiment
Guangfu Luo;Xuemin Qian;Huibiao Liu;Rui Qin.
Physical Review B (2011)
Quantum spin Hall insulators and quantum valley Hall insulators of BiX/SbX (X=H, F, Cl and Br) monolayers with a record bulk band gap
Zhigang Song;Cheng Cheng Liu;Jinbo Yang;Jingzhi Han.
Npg Asia Materials (2014)
Interfacial Properties of Monolayer and Bilayer MoS2 Contacts with Metals: Beyond the Energy Band Calculations
Hongxia Zhong;Ruge Quhe;Ruge Quhe;Yangyang Wang;Yangyang Wang;Zeyuan Ni.
Scientific Reports (2016)
Giant magnetoresistance in silicene nanoribbons
Chengyong Xu;Guangfu Luo;Qihang Liu;Jiaxin Zheng.
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