2026 Yangyang Wang: Materials Science Researcher – H-Index, Publications & Awards

Discipline name	D-Index	World Ranking	Current World Ranking	National Ranking	Current National Ranking	Publications	Citations
Materials Science	45	11775	11383	3244	3229	88	7187

Overview

Yangyang Wang is affiliated with the China Academy of Space Technology in China. Their research primarily spans the fields of Engineering and Materials Science, with significant focus on subfields including Materials Chemistry, Civil and Structural Engineering, Electrical and Electronic Engineering, Mechanics of Materials, and Mechanical Engineering.

Their recent research outputs demonstrate a strong engagement with topics such as 2D Materials and Applications, Concrete and Cement Materials Research, Graphene research and applications, Concrete Corrosion and Durability, MXene and MAX Phase Materials, Corrosion Behavior and Inhibition, and Infrastructure Maintenance and Monitoring.

Frequent publication venues for Wang include Physical Review Applied, SSRN Electronic Journal, Journal of Alloys and Compounds, Journal of Building Engineering, and Chemical Engineering Journal.

Notable recent papers authored or co-authored by Wang are:

Schottky barrier heights in two-dimensional field-effect transistors: from theory to experiment (2021, Reports on Progress in Physics)
Sub-10 nm two-dimensional transistors: Theory and experiment (2021, Physics Reports)
Active biochar support nano zero-valent iron for efficient removal of U(VI) from sewage water (2020, Journal of Alloys and Compounds)
Designing sub-10-nm Metal-Oxide-Semiconductor Field-Effect Transistors via Ballistic Transport and Disparate Effective Mass: The Case of Two-Dimensional BiN (2020, Physical Review Applied)
Large-Scale Multifunctional Carbon Nanotube Thin Film as Effective Mid-Infrared Radiation Modulator with Long-Term Stability (2020, Advanced Optical Materials)

Wang collaborates frequently with several researchers, including:

Liqiang Ma
Jie Hu
Haoliang Huang
Yuwei Ma
Jiangxiong Wei

Their work incorporates experimental studies alongside theoretical approaches, particularly in nanoscale electronic devices and materials chemistry.

This research profile reflects a multidisciplinary approach, integrating advanced materials studies with engineering applications relevant to semiconductor devices and environmental remediation.

Best Publications

Rise of silicene: A competitive 2D material

Jijun Zhao;Hongsheng Liu;Zhiming Yu;Ruge Quhe;Ruge Quhe

883
Citations
Many-body Effect, Carrier Mobility, and Device Performance of Hexagonal Arsenene and Antimonene

Yangyang Wang;Yangyang Wang;Pu Huang;Meng Ye;Ruge Quhe

355
Citations
Interfacial Properties of Monolayer and Bilayer MoS2 Contacts with Metals: Beyond the Energy Band Calculations

Hongxia Zhong;Ruge Quhe;Ruge Quhe;Yangyang Wang;Yangyang Wang;Zeyuan Ni

336
Citations
Tunable and sizable band gap in silicene by surface adsorption

Ruge Quhe;Ruixiang Fei;Qihang Liu;Jiaxin Zheng

308
Citations
High-performance sub-10 nm monolayer Bi2O2Se transistors

Ruge Quhe;Junchen Liu;Jinxiong Wu;Jie Yang

243
Citations
Monolayer Phosphorene–Metal Contacts

Yuanyuan Pan;Yangyang Wang;Yangyang Wang;Meng Ye;Ruge Quhe;Ruge Quhe

239
Citations
Does p-type ohmic contact exist in WSe2–metal interfaces?

Yangyang Wang;Yangyang Wang;Ruo Xi Yang;Ruo Xi Yang;Ruge Quhe;Ruge Quhe;Hongxia Zhong;Hongxia Zhong

221
Citations
Simulations of Quantum Transport in Sub-5-nm Monolayer Phosphorene Transistors

Ruge Quhe;Qiuhui Li;Qiaoxuan Zhang;Yangyang Wang

213
Citations
Tunable band gap and doping type in silicene by surface adsorption: towards tunneling transistors

Zeyuan Ni;Hongxia Zhong;Xinhe Jiang;Ruge Quhe

191
Citations
Tunable Band Gap and Doping Type in Silicene by Surface Adsorption: towards Tunneling Transistors

Zeyuan Ni;Hongxia Zhong;Xinhe Jiang;Ruge Quhe

179
Citations
Schottky barrier heights in two-dimensional field-effect transistors: from theory to experiment.

Yangyang Wang;Shiqi Liu;Qiuhui Li;Ruge Quhe

178
Citations
Sub-10 nm two-dimensional transistors: Theory and experiment

Ruge Quhe;Lin Xu;Shiqi Liu;Chen Yang

171
Citations
All‐Metallic Vertical Transistors Based on Stacked Dirac Materials

Yangyang Wang;Zeyuan Ni;Qihang Liu;Ruge Quhe

170
Citations
Many-Body Effect and Device Performance Limit of Monolayer InSe.

Yangyang Wang;Ruixiang Fei;Ruge Quhe;Jingzhen Li

143
Citations
Does the Dirac Cone Exist in Silicene on Metal Substrates

Ruge Quhe;Yakun Yuan;Jiaxin Zheng;Yangyang Wang

140
Citations
HALF-METALLIC SILICENE AND GERMANENE NANORIBBONS: TOWARDS HIGH-PERFORMANCE SPINTRONICS DEVICE

Yangyang Wang;Jiaxin Zheng;Zeyuan Ni;Ruixiang Fei

122
Citations
Performance Upper Limit of sub‐10 nm Monolayer MoS2 Transistors

Zeyuan Ni;Zeyuan Ni;Meng Ye;Jianhua Ma;Jianhua Ma;Jianhua Ma;Yangyang Wang;Yangyang Wang

120
Citations
Graphdiyne-metal contacts and graphdiyne transistors

Yuanyuan Pan;Yangyang Wang;Lu Wang;Hongxia Zhong

118
Citations
Tunable band gap in germanene by surface adsorption

Meng Ye;Ruge Quhe;Jiaxin Zheng;Zeyuan Ni

116
Citations
Interfacial Properties of Bilayer and Trilayer Graphene on Metal Substrates

Jiaxin Zheng;Yangyang Wang;Lu Wang;Ruge Quhe

116
Citations
Schottky Barriers in Bilayer Phosphorene Transistors

Yuanyuan Pan;Yang Dan;Yangyang Wang;Meng Ye

108
Citations
Can a Black Phosphorus Schottky Barrier Transistor Be Good Enough

Ruge Quhe;Xiyou Peng;Yuanyuan Pan;Meng Ye

105
Citations
Interfacial Properties of Monolayer and Bilayer MoS2 Contacts with Metals: Beyond the Energy Band Calculations

Hongxia Zhong;Zeyuan Ni;Yangyang Wang;Meng Ye

9
Citations