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Shengli Zhang

D-Index & Metrics

Discipline name D-Index World Ranking Current World Ranking National Ranking Current National Ranking Publications Citations
Materials Science 61 6643 6418 1986 1979 187 20162

Shengli Zhang publications per year

The chart shows the history of publications by Shengli Zhang between 1995 and 2026, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. Shengli Zhang published across 32 years, from 1995 to 2026, averaging 10.8 papers a year. Output peaked at 43 publications in 2022. 44 of the 344 publications appeared in the last two years.

No. of publications
10 20 30 40
Bar chart. Horizontal axis: year, 1995 to 2026. Vertical axis: number of publications, 0 to 43. Peak 43 publications in 2022. 1995: 2 publications 1996: 0 publications 1997: 0 publications 1998: 0 publications 1999: 0 publications 2000: 0 publications 2001: 0 publications 2002: 0 publications 2003: 0 publications 2004: 0 publications 2005: 2 publications 2006: 0 publications 2007: 0 publications 2008: 0 publications 2009: 1 publication 2010: 0 publications 2011: 1 publication 2012: 0 publications 2013: 2 publications 2014: 5 publications 2015: 16 publications 2016: 28 publications 2017: 13 publications 2018: 18 publications 2019: 37 publications 2020: 32 publications 2021: 28 publications 2022: 43 publications 2023: 39 publications 2024: 33 publications 2025: 42 publications 2026: 2 publications
1995 2026

344 publications in total across all disciplines

View publications per year as a table
Shengli Zhang: publications per year, 1995 to 2026
Year Publications
1995 2
1996 0
1997 0
1998 0
1999 0
2000 0
2001 0
2002 0
2003 0
2004 0
2005 2
2006 0
2007 0
2008 0
2009 1
2010 0
2011 1
2012 0
2013 2
2014 5
2015 16
2016 28
2017 13
2018 18
2019 37
2020 32
2021 28
2022 43
2023 39
2024 33
2025 42
2026 2
Total 344
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Shengli Zhang publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Shengli Zhang sits on this spectrum.

No. of scientists
200 400 600 800
Bar chart with 57 bars. Horizontal axis: publications, 50–69 to 1,163+. Vertical axis: number of scientists, 0 to 891. Most scientists, 891, have 190–209 publications. The last bar groups every scientist with 1,163 publications or more. The highlighted bar, 170–189 publications, is where this scientist sits. 50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50–69 publications 1,163+

This scientist: 187 publications — 26th percentile

26% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

View publications distribution as a table
Number of Materials Science scientists by publication count, Research.com 2026 ranking edition. Based on 12,847 ranked scientists.
Publications Scientists This scientist
50–69 28
70–89 152
90–109 356
110–129 487
130–149 723
150–169 835
170–189 850 187
190–209 891
210–229 862
230–249 766
250–269 726
270–289 665
290–309 593
310–329 537
330–349 477
350–369 440
370–389 356
390–409 321
410–429 256
430–449 246
450–469 216
470–489 212
490–509 174
510–529 194
530–549 162
550–569 131
570–589 111
590–609 103
610–629 99
630–649 77
650–669 92
670–689 56
690–709 53
710–729 53
730–749 38
750–769 52
770–789 43
790–809 38
810–829 34
830–849 25
850–869 18
870–889 20
890–909 24
910–929 27
930–949 20
950–969 17
970–989 10
990–1,009 16
1,010–1,029 13
1,030–1,049 12
1,050–1,069 9
1,070–1,089 8
1,090–1,109 7
1,110–1,129 9
1,130–1,149 2
1,150–1,162 5
1,163+ 100
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Shengli Zhang D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Shengli Zhang sits on this spectrum.

No. of scientists
200 400 600
Bar chart with 64 bars. Horizontal axis: D-Index, 40–41 to 165+. Vertical axis: number of scientists, 0 to 667. Most scientists, 667, have 52–53 D-Index. The last bar groups every scientist with 165 D-Index or more. The highlighted bar, 60–61 D-Index, is where this scientist sits. 40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40–41 D-Index 165+

This scientist: 61 D-Index — 48th percentile

48% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

View D-Index distribution as a table
Number of Materials Science scientists by D-index, Research.com 2026 ranking edition. Based on 12,847 ranked scientists.
D-Index Scientists This scientist
40–41 211
42–43 450
44–45 612
46–47 612
48–49 598
50–51 657
52–53 667
54–55 621
56–57 597
58–59 610
60–61 587 61
62–63 606
64–65 533
66–67 490
68–69 469
70–71 378
72–73 421
74–75 359
76–77 323
78–79 299
80–81 230
82–83 210
84–85 195
86–87 203
88–89 175
90–91 175
92–93 142
94–95 121
96–97 117
98–99 107
100–101 88
102–103 85
104–105 68
106–107 62
108–109 57
110–111 45
112–113 49
114–115 50
116–117 34
118–119 38
120–121 37
122–123 29
124–125 28
126–127 24
128–129 33
130–131 28
132–133 21
134–135 20
136–137 23
138–139 17
140–141 12
142–143 17
144–145 21
146–147 13
148–149 11
150–151 14
152–153 13
154–155 9
156–157 10
158–159 7
160–161 4
162–163 4
164 3
165+ 98
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Overview

Shengli Zhang is affiliated with Nanjing University of Science and Technology in China. Their research predominantly focuses on the fields of Materials Science and Engineering, with extensive contributions to subfields including Materials Chemistry, Electrical and Electronic Engineering, Renewable Energy, Sustainability and the Environment, Atomic and Molecular Physics, and Optics, as well as Biomedical Engineering.

The scientist's work covers several specialized topics, notably:

  • 2D Materials and Applications
  • MXene and MAX Phase Materials
  • Perovskite Materials and Applications
  • Graphene Research and Applications
  • Electrocatalysts for Energy Conversion
  • Advanced Photocatalysis Techniques
  • Chalcogenide Semiconductor Thin Films

Shengli Zhang has published a significant number of papers in several frequent venues, including:

  • Advanced Functional Materials
  • Physical Review Applied
  • ACS Applied Materials & Interfaces
  • IEEE Transactions on Electron Devices
  • The Journal of Physical Chemistry Letters

Some representative recent papers authored by or associated with Zhang include:

  • "Tackling the Activity and Selectivity Challenges of Electrocatalysts toward the Nitrogen Reduction Reaction via Atomically Dispersed Biatom Catalysts", 2020, Journal of the American Chemical Society
  • "Advances in the Application of Perovskite Materials", 2023, Nano-Micro Letters
  • "Near-Complete Suppression of Oxygen Evolution for Photoelectrochemical H2O Oxidative H2O2 Synthesis", 2020, Journal of the American Chemical Society
  • "Establishing a Theoretical Landscape for Identifying Basal Plane Active 2D Metal Borides (MBenes) toward Nitrogen Electroreduction", 2020, Advanced Functional Materials
  • "A two-photon tandem black phosphorus quantum dot-sensitized BiVO4 photoanode for solar water splitting", 2021, Energy & Environmental Science

Frequent collaborators of Shengli Zhang include Haibo Zeng, Hengze Qu, Wenhan Zhou, Shiying Guo, and Lili Xu, each contributing to multiple joint publications.

Best Publications

  • CsPbX3 Quantum Dots for Lighting and Displays: Room-Temperature Synthesis, Photoluminescence Superiorities, Underlying Origins and White Light-Emitting Diodes

    Xiaoming Li;Xiaoming Li;Ye Wu;Shengli Zhang;Bo Cai

  • Atomically Thin Arsenene and Antimonene: Semimetal-Semiconductor and Indirect-Direct Band-Gap Transitions

    Shengli Zhang;Zhong Yan;Yafei Li;Zhongfang Chen

  • Tackling the Activity and Selectivity Challenges of Electrocatalysts toward the Nitrogen Reduction Reaction via Atomically Dispersed Biatom Catalysts

    Xiangyu Guo;Jinxing Gu;Shiru Lin;Shengli Zhang

  • Two-dimensional antimonene single crystals grown by van der Waals epitaxy.

    Jianping Ji;Xiufeng Song;Jizi Liu;Zhong Yan

  • Semiconducting Group 15 Monolayers: A Broad Range of Band Gaps and High Carrier Mobilities

    Shengli Zhang;Meiqiu Xie;Fengyu Li;Zhong Yan

  • Recent progress in 2D group-VA semiconductors: from theory to experiment

    Shengli Zhang;Shiying Guo;Zhongfang Chen;Yeliang Wang

  • Engineering surface states of carbon dots to achieve controllable luminescence for solid-luminescent composites and sensitive Be2+ detection

    Xiaoming Li;Xiaoming Li;Shengli Zhang;Sergei A. Kulinich;Sergei A. Kulinich;Yanli Liu;Yanli Liu

  • Simultaneously Achieving High Activity and Selectivity toward Two-Electron O2 Electroreduction: The Power of Single-Atom Catalysts

    Xiangyu Guo;Shiru Lin;Jinxing Gu;Shengli Zhang

  • CsPbBr3 Quantum Dots 2.0: Benzenesulfonic Acid Equivalent Ligand Awakens Complete Purification.

    Dandan Yang;Xiaoming Li;Wenhan Zhou;Shengli Zhang

  • Black phosphorene as a hole extraction layer boosting solar water splitting of oxygen evolution catalysts.

    Kan Zhang;Kan Zhang;Bingjun Jin;Cheolwoo Park;Yoonjun Cho

  • 2D V-V Binary Materials: Status and Challenges.

    Shiying Guo;Yupeng Zhang;Yanqi Ge;Shengli Zhang

  • Antimonene Oxides: Emerging Tunable Direct Bandgap Semiconductor and Novel Topological Insulator

    Shengli Zhang;Wenhan Zhou;Yandong Ma;Jianping Ji

  • Near-Complete Suppression of Oxygen Evolution for Photoelectrochemical H2O Oxidative H2O2 Synthesis

    Kan Zhang;Jiali Liu;Luyang Wang;Bingjun Jin

  • Boosting Two-Dimensional MoS2/CsPbBr3 Photodetectors via Enhanced Light Absorbance and Interfacial Carrier Separation

    Xiufeng Song;Xuhai Liu;Dejian Yu;Chengxue Huo

  • 2D Fe-containing cobalt phosphide/cobalt oxide lateral heterostructure with enhanced activity for oxygen evolution reaction

    Xuemin Hu;Shengli Zhang;Jingwen Sun;Lei Yu

  • Nonlinear Saturable Absorption of Liquid-Exfoliated Molybdenum/Tungsten Ditelluride Nanosheets

    Dong Mao;Bobo Du;Dexing Yang;Shengli Zhang

  • A promising two-dimensional solar cell donor: Black arsenic–phosphorus monolayer with 1.54 eV direct bandgap and mobility exceeding 14,000 cm2 V−1 s−1

    Meiqiu Xie;Shengli Zhang;Bo Cai;Yong Huang

  • WS 2 saturable absorber for dissipative soliton mode locking at 1.06 and 1.55 µm

    Dong Mao;Shengli Zhang;Yadong Wang;Xuetao Gan

  • Could Borophene Be Used as a Promising Anode Material for High-Performance Lithium Ion Battery?

    Unknown

  • GeSe monolayer semiconductor with tunable direct band gap and small carrier effective mass

    Yonghong Hu;Yonghong Hu;Shengli Zhang;Shaofa Sun;Meiqiu Xie

  • Few-Layer Antimonene: Anisotropic Expansion and Reversible Crystalline-Phase Evolution Enable Large-Capacity and Long-Life Na-Ion Batteries.

    Weifeng Tian;Shengli Zhang;Chengxue Huo;Daming Zhu

Frequent Co-Authors

Haibo Zeng
Haibo Zeng Nanjing University of Science and Technology
Kan Zhang
Kan Zhang Nanjing University of Science and Technology
Zhongfang Chen
Zhongfang Chen University of Puerto Rico at Río Piedras
Junwu Zhu
Junwu Zhu Nanjing University of Science and Technology
Jong Hyeok Park
Jong Hyeok Park Yonsei University
Yangyang Wang
Yangyang Wang China Academy of Space Technology
Feng Xu
Feng Xu Xi'an Jiaotong University
Jizhong Song
Jizhong Song Nanjing University of Science and Technology
Sergei A. Kulinich
Sergei A. Kulinich Tokai University
Xueji Zhang
Xueji Zhang Shenzhen University

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Best Scientists Citing Shengli Zhang

Han Zhang

Han Zhang

Shenzhen University

Publications: 115

Haibo Zeng

Haibo Zeng

Nanjing University of Science and Technology

Publications: 82

Martin Pumera

Martin Pumera

Brno University of Technology

Publications: 41

Ying Dai

Ying Dai

Shandong University

Publications: 40

Baibiao Huang

Baibiao Huang

Shandong University

Publications: 37

William W. Yu

William W. Yu

Louisiana State University in Shreveport

Publications: 37

Tianyou Zhai

Tianyou Zhai

Huazhong University of Science and Technology

Publications: 36

Chong-Xin Shan

Chong-Xin Shan

Zhengzhou University

Publications: 36

Yu Jia

Yu Jia

Henan University

Publications: 32

Jizhong Song

Jizhong Song

Nanjing University of Science and Technology

Publications: 31

Daqin Chen

Daqin Chen

Fujian Normal University

Publications: 31

Rajeev Ahuja

Rajeev Ahuja

Uppsala University

Publications: 30

Zhifeng Shi

Zhifeng Shi

Zhengzhou University

Publications: 29

Wenjun Liu

Wenjun Liu

Beijing University of Posts and Telecommunications

Publications: 27

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Sergey V. Dmitriev

Russian Academy of Sciences

Publications: 25

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Ju Han Lee

Korea Institute of Science and Technology

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