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Rising Stars
2025

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Rising Stars

D-Index
47
Citations
7677
World Ranking
395
National Ranking
134

Electronics and Electrical Engineering

D-Index
43
Citations
6199
World Ranking
3968
National Ranking
613

Ruge Quhe publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Ruge Quhe sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 105 publications — 4th percentile

4% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Ruge Quhe D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Ruge Quhe sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 43 D-Index — 45th percentile

45% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Research.com Recognitions

  • 2025 - Research.com Rising Stars Award

Overview

Ruge Quhe is affiliated with Beijing University of Posts and Telecommunications in China. Their research primarily focuses on the fields of Materials Science and Engineering, with significant contributions to subfields such as Materials Chemistry, Electrical and Electronic Engineering, and Biomedical Engineering.

The scientist's work covers a variety of topics related to advanced materials and device technologies. Major themes include:

  • 2D Materials and Applications
  • Graphene research and applications
  • MXene and MAX Phase Materials
  • Perovskite Materials and Applications
  • Advancements in Semiconductor Devices and Circuit Design
  • Nanowire Synthesis and Applications
  • Semiconductor materials and devices

Ruge Quhe has published extensively in several reputable venues. The most frequent publication outlets include:

  • Physical Review Applied
  • Advanced Theory and Simulations
  • ACS Applied Materials & Interfaces
  • Advanced Functional Materials
  • Nanoscale

Recent representative papers by or involving Ruge Quhe span experimental and theoretical studies of nanoscale transistors and magnetic devices. Selected examples are:

  • "Schottky barrier heights in two-dimensional field-effect transistors: from theory to experiment," 2021, Reports on Progress in Physics
  • "Sub-10 nm two-dimensional transistors: Theory and experiment," 2021, Physics Reports
  • "Performance Limit of Ultrathin GaAs Transistors," 2022, ACS Applied Materials & Interfaces
  • "Recent Experimental Breakthroughs on 2D Transistors: Approaching the Theoretical Limit," 2024, Advanced Functional Materials
  • "Layer-Dependent Giant Magnetoresistance in Two-Dimensional CrPS4 Magnetic Tunnel Junctions," 2021, Physical Review Applied

The scientist has collaborated frequently with other researchers. Notable co-authors include:

  • Jing Lü
  • Qiuhui Li
  • Linqiang Xu
  • Chen Yang
  • Jie Yang

Best Publications

  • Many-body Effect, Carrier Mobility, and Device Performance of Hexagonal Arsenene and Antimonene

    Yangyang Wang;Yangyang Wang;Pu Huang;Meng Ye;Ruge Quhe

  • Interfacial Properties of Monolayer and Bilayer MoS2 Contacts with Metals: Beyond the Energy Band Calculations

    Hongxia Zhong;Ruge Quhe;Ruge Quhe;Yangyang Wang;Yangyang Wang;Zeyuan Ni

  • Tunable and sizable band gap in silicene by surface adsorption

    Ruge Quhe;Ruixiang Fei;Qihang Liu;Jiaxin Zheng

  • High-performance sub-10 nm monolayer Bi2O2Se transistors

    Ruge Quhe;Junchen Liu;Jinxiong Wu;Jie Yang

  • Monolayer Phosphorene–Metal Contacts

    Yuanyuan Pan;Yangyang Wang;Yangyang Wang;Meng Ye;Ruge Quhe;Ruge Quhe

  • Tunable and sizable band gap of single-layer graphene sandwiched between hexagonal boron nitride

    Ruge Quhe;Jiaxin Zheng;Guangfu Luo;Qihang Liu

  • Does p-type ohmic contact exist in WSe2–metal interfaces?

    Yangyang Wang;Yangyang Wang;Ruo Xi Yang;Ruo Xi Yang;Ruge Quhe;Ruge Quhe;Hongxia Zhong;Hongxia Zhong

  • Simulations of Quantum Transport in Sub-5-nm Monolayer Phosphorene Transistors

    Ruge Quhe;Qiuhui Li;Qiaoxuan Zhang;Yangyang Wang

  • Structural and electronic properties of bilayer and trilayer graphdiyne

    Qiye Zheng;Guangfu Luo;Qihang Liu;Ruge Quhe

  • Tunable band gap and doping type in silicene by surface adsorption: towards tunneling transistors

    Zeyuan Ni;Hongxia Zhong;Xinhe Jiang;Ruge Quhe

  • Tunable Band Gap and Doping Type in Silicene by Surface Adsorption: towards Tunneling Transistors

    Zeyuan Ni;Hongxia Zhong;Xinhe Jiang;Ruge Quhe

  • Schottky barrier heights in two-dimensional field-effect transistors: from theory to experiment.

    Yangyang Wang;Shiqi Liu;Qiuhui Li;Ruge Quhe

  • Sub-10 nm two-dimensional transistors: Theory and experiment

    Ruge Quhe;Lin Xu;Shiqi Liu;Chen Yang

  • All‐Metallic Vertical Transistors Based on Stacked Dirac Materials

    Yangyang Wang;Zeyuan Ni;Qihang Liu;Ruge Quhe

  • Sub-10 nm Gate Length Graphene Transistors: Operating at Terahertz Frequencies with Current Saturation

    Jiaxin Zheng;Lu Wang;Ruge Quhe;Qihang Liu

  • Many-Body Effect and Device Performance Limit of Monolayer InSe.

    Yangyang Wang;Ruixiang Fei;Ruge Quhe;Jingzhen Li

  • Performance Upper Limit of sub‐10 nm Monolayer MoS2 Transistors

    Zeyuan Ni;Zeyuan Ni;Meng Ye;Jianhua Ma;Jianhua Ma;Jianhua Ma;Yangyang Wang;Yangyang Wang

  • Tunable band gap in germanene by surface adsorption

    Meng Ye;Ruge Quhe;Jiaxin Zheng;Zeyuan Ni

  • Nonlinear optical properties of MoS2-WS2 heterostructure in fiber lasers.

    W J Liu;M L Liu;B Liu;R G Quhe

  • Schottky Barriers in Bilayer Phosphorene Transistors

    Yuanyuan Pan;Yang Dan;Yangyang Wang;Meng Ye

  • Can a Black Phosphorus Schottky Barrier Transistor Be Good Enough

    Ruge Quhe;Xiyou Peng;Yuanyuan Pan;Meng Ye

  • Monolayer tellurene–metal contacts

    Jiahuan Yan;Xiuying Zhang;Yuanyuan Pan;Jingzhen Li

  • Half-Metallic Silicene and Germanene Nanoribbons: towards High-Performance Spintronics Device

    Yangyang Wang;Jiaxin Zheng;Zeyuan Ni;Ruixiang Fei

Frequent Co-Authors

Yangyang Wang
Yangyang Wang China Academy of Space Technology
Jing Lu
Jing Lu Peking University
Jiaxin Zheng
Jiaxin Zheng Peking University
Dapeng Yu
Dapeng Yu Peking University
Feng Pan
Feng Pan Peking University
Ming Lei
Ming Lei Beijing University of Posts and Telecommunications
Wanlin Guo
Wanlin Guo Nanjing University of Aeronautics and Astronautics
Jianhua Ma
Jianhua Ma Hosei University
Li Yang
Li Yang Washington University in St. Louis

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