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Rising Stars
2025

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Rising Stars

D-Index
47
Citations
7677
World Ranking
395
National Ranking
134

Electronics and Electrical Engineering

D-Index
43
Citations
6199
World Ranking
3968
National Ranking
612

Research.com Recognitions

  • 2025 - Research.com Rising Stars Award

Overview

Ruge Quhe is affiliated with Beijing University of Posts and Telecommunications in China. Their research primarily focuses on the fields of Materials Science and Engineering, with significant contributions to subfields such as Materials Chemistry, Electrical and Electronic Engineering, and Biomedical Engineering.

The scientist's work covers a variety of topics related to advanced materials and device technologies. Major themes include:

  • 2D Materials and Applications
  • Graphene research and applications
  • MXene and MAX Phase Materials
  • Perovskite Materials and Applications
  • Advancements in Semiconductor Devices and Circuit Design
  • Nanowire Synthesis and Applications
  • Semiconductor materials and devices

Ruge Quhe has published extensively in several reputable venues. The most frequent publication outlets include:

  • Physical Review Applied
  • Advanced Theory and Simulations
  • ACS Applied Materials & Interfaces
  • Advanced Functional Materials
  • Nanoscale

Recent representative papers by or involving Ruge Quhe span experimental and theoretical studies of nanoscale transistors and magnetic devices. Selected examples are:

  • "Schottky barrier heights in two-dimensional field-effect transistors: from theory to experiment," 2021, Reports on Progress in Physics
  • "Sub-10 nm two-dimensional transistors: Theory and experiment," 2021, Physics Reports
  • "Performance Limit of Ultrathin GaAs Transistors," 2022, ACS Applied Materials & Interfaces
  • "Recent Experimental Breakthroughs on 2D Transistors: Approaching the Theoretical Limit," 2024, Advanced Functional Materials
  • "Layer-Dependent Giant Magnetoresistance in Two-Dimensional CrPS4 Magnetic Tunnel Junctions," 2021, Physical Review Applied

The scientist has collaborated frequently with other researchers. Notable co-authors include:

  • Jing Lü
  • Qiuhui Li
  • Linqiang Xu
  • Chen Yang
  • Jie Yang

Best Publications

  • Many-body Effect, Carrier Mobility, and Device Performance of Hexagonal Arsenene and Antimonene

    Yangyang Wang;Yangyang Wang;Pu Huang;Meng Ye;Ruge Quhe

  • Interfacial Properties of Monolayer and Bilayer MoS2 Contacts with Metals: Beyond the Energy Band Calculations

    Hongxia Zhong;Ruge Quhe;Ruge Quhe;Yangyang Wang;Yangyang Wang;Zeyuan Ni

  • Tunable and sizable band gap in silicene by surface adsorption

    Ruge Quhe;Ruixiang Fei;Qihang Liu;Jiaxin Zheng

  • High-performance sub-10 nm monolayer Bi2O2Se transistors

    Ruge Quhe;Junchen Liu;Jinxiong Wu;Jie Yang

  • Monolayer Phosphorene–Metal Contacts

    Yuanyuan Pan;Yangyang Wang;Yangyang Wang;Meng Ye;Ruge Quhe;Ruge Quhe

  • Tunable and sizable band gap of single-layer graphene sandwiched between hexagonal boron nitride

    Ruge Quhe;Jiaxin Zheng;Guangfu Luo;Qihang Liu

  • Does p-type ohmic contact exist in WSe2–metal interfaces?

    Yangyang Wang;Yangyang Wang;Ruo Xi Yang;Ruo Xi Yang;Ruge Quhe;Ruge Quhe;Hongxia Zhong;Hongxia Zhong

  • Simulations of Quantum Transport in Sub-5-nm Monolayer Phosphorene Transistors

    Ruge Quhe;Qiuhui Li;Qiaoxuan Zhang;Yangyang Wang

  • Structural and electronic properties of bilayer and trilayer graphdiyne

    Qiye Zheng;Guangfu Luo;Qihang Liu;Ruge Quhe

  • Tunable band gap and doping type in silicene by surface adsorption: towards tunneling transistors

    Zeyuan Ni;Hongxia Zhong;Xinhe Jiang;Ruge Quhe

  • Tunable Band Gap and Doping Type in Silicene by Surface Adsorption: towards Tunneling Transistors

    Zeyuan Ni;Hongxia Zhong;Xinhe Jiang;Ruge Quhe

  • Schottky barrier heights in two-dimensional field-effect transistors: from theory to experiment.

    Yangyang Wang;Shiqi Liu;Qiuhui Li;Ruge Quhe

  • Sub-10 nm two-dimensional transistors: Theory and experiment

    Ruge Quhe;Lin Xu;Shiqi Liu;Chen Yang

  • All‐Metallic Vertical Transistors Based on Stacked Dirac Materials

    Yangyang Wang;Zeyuan Ni;Qihang Liu;Ruge Quhe

  • Sub-10 nm Gate Length Graphene Transistors: Operating at Terahertz Frequencies with Current Saturation

    Jiaxin Zheng;Lu Wang;Ruge Quhe;Qihang Liu

  • Many-Body Effect and Device Performance Limit of Monolayer InSe.

    Yangyang Wang;Ruixiang Fei;Ruge Quhe;Jingzhen Li

  • Performance Upper Limit of sub‐10 nm Monolayer MoS2 Transistors

    Zeyuan Ni;Zeyuan Ni;Meng Ye;Jianhua Ma;Jianhua Ma;Jianhua Ma;Yangyang Wang;Yangyang Wang

  • Tunable band gap in germanene by surface adsorption

    Meng Ye;Ruge Quhe;Jiaxin Zheng;Zeyuan Ni

  • Nonlinear optical properties of MoS2-WS2 heterostructure in fiber lasers.

    W J Liu;M L Liu;B Liu;R G Quhe

  • Schottky Barriers in Bilayer Phosphorene Transistors

    Yuanyuan Pan;Yang Dan;Yangyang Wang;Meng Ye

  • Can a Black Phosphorus Schottky Barrier Transistor Be Good Enough

    Ruge Quhe;Xiyou Peng;Yuanyuan Pan;Meng Ye

  • Monolayer tellurene–metal contacts

    Jiahuan Yan;Xiuying Zhang;Yuanyuan Pan;Jingzhen Li

  • Half-Metallic Silicene and Germanene Nanoribbons: towards High-Performance Spintronics Device

    Yangyang Wang;Jiaxin Zheng;Zeyuan Ni;Ruixiang Fei

Frequent Co-Authors

Yangyang Wang
Yangyang Wang China Academy of Space Technology
Jing Lu
Jing Lu Peking University
Jiaxin Zheng
Jiaxin Zheng Peking University
Dapeng Yu
Dapeng Yu Peking University
Feng Pan
Feng Pan Peking University
Ming Lei
Ming Lei Beijing University of Posts and Telecommunications
Wanlin Guo
Wanlin Guo Nanjing University of Aeronautics and Astronautics
Li Yang
Li Yang Washington University in St. Louis
Weihua Tang
Weihua Tang Nanjing University of Posts and Telecommunications

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