World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
30
Citations
2929
World Ranking
6865
National Ranking
102

Gilles Gasiot publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Gilles Gasiot sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 121 publications — 7th percentile

7% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Gilles Gasiot D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Gilles Gasiot sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 30 D-Index — 3rd percentile

3% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Gilles Gasiot is affiliated with STMicroelectronics (Switzerland) and has contributed extensively to the fields of engineering and physics, with a primary focus on electrical and electronic engineering. Their research spans multiple subfields including instrumentation, hardware and architecture, radiation, and aerospace engineering. The scientist has published work covering various interrelated topics within these areas.

Their main research topics include:

  • Radiation Effects in Electronics
  • Advanced Optical Sensing Technologies
  • CCD and CMOS Imaging Sensors
  • Integrated Circuits and Semiconductor Failure Analysis
  • Semiconductor Materials and Devices
  • VLSI and Analog Circuit Testing
  • Radiation Detection and Scintillator Technologies

Gasiot's publications appear predominantly in the journal IEEE Transactions on Nuclear Science, where they have at least 13 papers, along with a contribution to Microelectronics Reliability. Their work has been coauthored frequently with several researchers, including Victor Malherbe, Jean-Luc Autran, Thomas Thery, Philippe Roché, and Bastien Mamdy.

Representative recent papers include:

  • TIARA: Industrial Platform for Monte Carlo Single-Event Simulations in Planar Bulk, FD-SOI, and FinFET (2021), IEEE Transactions on Nuclear Science
  • Proton-Induced Displacement Damages in 2-D and Stacked CMOS SPADs: Study of Dark Count Rate Degradation (2023), IEEE Transactions on Nuclear Science
  • Displacement Damage Characterization of CMOS Single-Photon Avalanche Diodes: Alpha-Particle and Fast-Neutron Measurements (2021), IEEE Transactions on Nuclear Science
  • On-Chip Total Ionizing Dose Digital Monitor in Fully Depleted SOI Technologies (2020), IEEE Transactions on Nuclear Science
  • Real-Time Characterization of Neutron-Induced SEUs in Fusion Experiments at WEST Tokamak During D-D Plasma Operation (2022), IEEE Transactions on Nuclear Science

The research addresses topics in radiation effects and detection, including simulation platforms and characterization of displacement damage in semiconductor devices under particle irradiation. These efforts contribute to understanding the impact of radiation on integrated circuits and semiconductor sensors, relevant to sectors such as nuclear science, aerospace engineering, and advanced optical sensing technology.

Best Publications

  • Multiple Cell Upsets as the Key Contribution to the Total SER of 65 nm CMOS SRAMs and Its Dependence on Well Engineering

    G. Gasiot;D. Giot;P. Roche

  • Technology downscaling worsening radiation effects in bulk: SOI to the rescue

    Philippe Roche;Jean-Luc Autran;Gilles Gasiot;Daniela Munteanu

  • Impacts of front-end and middle-end process modifications on terrestrial soft error rate

    P. Roche;G. Gasiot

  • Insights on the transient response of fully and partially depleted SOI technologies under heavy-ion and dose-rate irradiations

    V. Ferlet-Cavrois;G. Gasiot;C. Marcandella;C. D'Hose

  • Comparisons of soft error rate for SRAMs in commercial SOI and bulk below the 130-nm technology node

    P. Roche;G. Gasiot;K. Forbes;V. O'Sullivan

  • Heavy ion testing and 3D simulations of Multiple Cell Upset in 65nm standard SRAMs

    D. Giot;P. Roche;G. Gasiot;J.L. Autran

  • Single Event Upset and Multiple Cell Upset Modeling in Commercial Bulk 65-nm CMOS SRAMs and Flip-Flops

    Slawosz Uznanski;Gilles Gasiot;Philippe Roche;Clement Tavernier

  • A Comprehensive Study on the Soft-Error Rate of Flip-Flops From 90-nm Production Libraries

    T. Heijmen;P. Roche;G. Gasiot;K.R. Forbes

  • Criterion for SEU occurrence in SRAM deduced from circuit and device Simulations in case of neutron-induced SER

    T. Merelle;H. Chabane;J.-M. Palau;K. Castellani-Coulie

  • Multiple-Bit Upset Analysis in 90 nm SRAMs: Heavy Ions Testing and 3D Simulations

    D. Giot;P. Roche;G. Gasiot;R. Harboe-Sorensen

  • Altitude and Underground Real-Time SER Characterization of CMOS 65 nm SRAM

    J.L. Autran;P. Roche;S. Sauze;G. Gasiot

  • Heavy Ion Testing and 3-D Simulations of Multiple Cell Upset in 65 nm Standard SRAMs

    D. Giot;P. Roche;G. Gasiot;J.-L. Autran

  • Alpha-Induced Multiple Cell Upsets in Standard and Radiation Hardened SRAMs Manufactured in a 65 nm CMOS Technology

    G. Gasiot;D. Giot;P. Roche

  • Characterization of the parasitic bipolar amplification in SOI technologies submitted to transient irradiation

    V. Ferlet-Cavrois;C. Marcandella;G. Giraud;G. Gasiot

  • A Commercial 65 nm CMOS Technology for Space Applications: Heavy Ion, Proton and Gamma Test Results and Modeling

    Philippe Roche;Gilles Gasiot;Slawosz Uznanski;Jean-Marc Daveau

  • SEU sensitivity of bulk and SOI technologies to 14-MeV neutrons

    G. Gasiot;V. Ferlet-Cavrois;J. Baggio;P. Roche

  • Scaled IT-Bulk devices built with CMOS 90nm technology for low-cost eDRAM applications

    R. Ranica;A. Villaret;P. Malinge;G. Gasiot

  • SER/SEL performances of SRAMs in UTBB FDSOI28 and comparisons with PDSOI and BULK counterparts

    Gilles Gasiot;Dimitri Soussan;Maximilien Glorieux;Cyril Bottoni

  • Monte-Carlo simulations to quantify neutron-induced multiple bit upsets in advanced SRAMs

    T. Merelle;F. Saigne;B. Sagnes;G. Gasiot

  • Soft-Error Rate Induced by Thermal and Low Energy Neutrons in 40 nm SRAMs

    J. L. Autran;S. Serre;S. Semikh;D. Munteanu

  • An industrial fault injection platform for soft-error dependability analysis and hardening of complex system-on-a-chip

    Jean-Marc Daveau;Alexandre Blampey;Gilles Gasiot;Joseph Bulone

  • Real-time Soft-Error testing of 40nm SRAMs

    J.L. Autran;S. Serre;D. Munteanu;S. Martinie

Frequent Co-Authors

Daniela Munteanu
Daniela Munteanu Aix-Marseille University
Jean-Luc Autran
Jean-Luc Autran University of Rennes
Alessandro Paccagnella
Alessandro Paccagnella University of Padua
O. Faynot
O. Faynot CEA LETI
Robert A. Reed
Robert A. Reed Vanderbilt University
Robert A. Weller
Robert A. Weller Woods Hole Oceanographic Institution

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