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Gilles Gasiot

D-Index & Metrics

Discipline name D-Index World Ranking Current World Ranking National Ranking Current National Ranking Publications Citations
Electronics and Electrical Engineering 30 6865 6597 102 95 121 2929

Gilles Gasiot publications per year

The chart shows the history of publications by Gilles Gasiot between 2000 and 2025, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. Gilles Gasiot published across 26 years, from 2000 to 2025, averaging 4.8 papers a year. Output peaked at 13 publications in 2014. 3 of the 125 publications appeared in the last two years.

No. of publications
5 10
Bar chart. Horizontal axis: year, 2000 to 2025. Vertical axis: number of publications, 0 to 13. Peak 13 publications in 2014. 2000: 1 publication 2001: 2 publications 2002: 4 publications 2003: 2 publications 2004: 2 publications 2005: 7 publications 2006: 2 publications 2007: 10 publications 2008: 7 publications 2009: 7 publications 2010: 7 publications 2011: 6 publications 2012: 9 publications 2013: 5 publications 2014: 13 publications 2015: 8 publications 2016: 8 publications 2017: 6 publications 2018: 2 publications 2019: 1 publication 2020: 1 publication 2021: 6 publications 2022: 1 publication 2023: 5 publications 2024: 2 publications 2025: 1 publication
2000 2025

125 publications in total across all disciplines

View publications per year as a table
Gilles Gasiot: publications per year, 2000 to 2025
Year Publications
2000 1
2001 2
2002 4
2003 2
2004 2
2005 7
2006 2
2007 10
2008 7
2009 7
2010 7
2011 6
2012 9
2013 5
2014 13
2015 8
2016 8
2017 6
2018 2
2019 1
2020 1
2021 6
2022 1
2023 5
2024 2
2025 1
Total 125
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Gilles Gasiot publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Gilles Gasiot sits on this spectrum.

No. of scientists
100 200 300 400
Bar chart with 53 bars. Horizontal axis: publications, 34–53 to 1,065+. Vertical axis: number of scientists, 0 to 445. Most scientists, 445, have 174–193 publications. The last bar groups every scientist with 1,065 publications or more. The highlighted bar, 114–133 publications, is where this scientist sits. 34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34–53 publications 1,065+

This scientist: 121 publications — 7th percentile

7% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

View publications distribution as a table
Number of Electronics and Electrical Engineering scientists by publication count, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
Publications Scientists This scientist
34–53 24
54–73 52
74–93 114
94–113 203
114–133 269 121
134–153 355
154–173 403
174–193 445
194–213 430
214–233 431
234–253 399
254–273 366
274–293 335
294–313 300
314–333 276
334–353 250
354–373 214
374–393 187
394–413 152
414–433 169
434–453 147
454–473 111
474–493 117
494–513 103
514–533 99
534–553 92
554–573 75
574–593 58
594–613 69
614–633 50
634–653 62
654–673 54
674–693 44
694–713 37
714–733 28
734–753 26
754–773 26
774–793 19
794–813 23
814–833 20
834–853 16
854–873 20
874–893 11
894–913 11
914–933 16
934–953 13
954–973 10
974–993 11
994–1,013 9
1,014–1,033 9
1,034–1,053 10
1,054–1,064 6
1,065+ 99
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Gilles Gasiot D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Gilles Gasiot sits on this spectrum.

No. of scientists
50 100 150 200 250
Bar chart with 82 bars. Horizontal axis: D-Index, 30 to 111+. Vertical axis: number of scientists, 0 to 263. Most scientists, 263, have 32 D-Index. The last bar groups every scientist with 111 D-Index or more. The highlighted bar, 30 D-Index, is where this scientist sits. 30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 30 D-Index — 3rd percentile

3% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

View D-Index distribution as a table
Number of Electronics and Electrical Engineering scientists by D-index, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
D-Index Scientists This scientist
30 178 30
31 257
32 263
33 262
34 244
35 236
36 211
37 220
38 214
39 214
40 205
41 187
42 194
43 201
44 155
45 189
46 148
47 160
48 134
49 130
50 141
51 156
52 108
53 130
54 112
55 97
56 111
57 102
58 108
59 120
60 103
61 93
62 92
63 74
64 77
65 73
66 64
67 69
68 60
69 39
70 57
71 59
72 46
73 49
74 38
75 35
76 32
77 35
78 31
79 22
80 34
81 31
82 34
83 23
84 18
85 30
86 19
87 19
88 20
89 8
90 17
91 7
92 14
93 9
94 15
95 10
96 12
97 10
98 10
99 12
100 16
101 5
102 7
103 7
104 8
105 9
106 13
107 4
108 5
109 10
110 8
111+ 96
Download as CSV

Overview

Gilles Gasiot is affiliated with STMicroelectronics (Switzerland) and has contributed extensively to the fields of engineering and physics, with a primary focus on electrical and electronic engineering. Their research spans multiple subfields including instrumentation, hardware and architecture, radiation, and aerospace engineering. The scientist has published work covering various interrelated topics within these areas.

Their main research topics include:

  • Radiation Effects in Electronics
  • Advanced Optical Sensing Technologies
  • CCD and CMOS Imaging Sensors
  • Integrated Circuits and Semiconductor Failure Analysis
  • Semiconductor Materials and Devices
  • VLSI and Analog Circuit Testing
  • Radiation Detection and Scintillator Technologies

Gasiot's publications appear predominantly in the journal IEEE Transactions on Nuclear Science, where they have at least 13 papers, along with a contribution to Microelectronics Reliability. Their work has been coauthored frequently with several researchers, including Victor Malherbe, Jean-Luc Autran, Thomas Thery, Philippe Roché, and Bastien Mamdy.

Representative recent papers include:

  • TIARA: Industrial Platform for Monte Carlo Single-Event Simulations in Planar Bulk, FD-SOI, and FinFET (2021), IEEE Transactions on Nuclear Science
  • Proton-Induced Displacement Damages in 2-D and Stacked CMOS SPADs: Study of Dark Count Rate Degradation (2023), IEEE Transactions on Nuclear Science
  • Displacement Damage Characterization of CMOS Single-Photon Avalanche Diodes: Alpha-Particle and Fast-Neutron Measurements (2021), IEEE Transactions on Nuclear Science
  • On-Chip Total Ionizing Dose Digital Monitor in Fully Depleted SOI Technologies (2020), IEEE Transactions on Nuclear Science
  • Real-Time Characterization of Neutron-Induced SEUs in Fusion Experiments at WEST Tokamak During D-D Plasma Operation (2022), IEEE Transactions on Nuclear Science

The research addresses topics in radiation effects and detection, including simulation platforms and characterization of displacement damage in semiconductor devices under particle irradiation. These efforts contribute to understanding the impact of radiation on integrated circuits and semiconductor sensors, relevant to sectors such as nuclear science, aerospace engineering, and advanced optical sensing technology.

Best Publications

  • Multiple Cell Upsets as the Key Contribution to the Total SER of 65 nm CMOS SRAMs and Its Dependence on Well Engineering

    G. Gasiot;D. Giot;P. Roche

  • Technology downscaling worsening radiation effects in bulk: SOI to the rescue

    Philippe Roche;Jean-Luc Autran;Gilles Gasiot;Daniela Munteanu

  • Impacts of front-end and middle-end process modifications on terrestrial soft error rate

    P. Roche;G. Gasiot

  • Insights on the transient response of fully and partially depleted SOI technologies under heavy-ion and dose-rate irradiations

    V. Ferlet-Cavrois;G. Gasiot;C. Marcandella;C. D'Hose

  • Comparisons of soft error rate for SRAMs in commercial SOI and bulk below the 130-nm technology node

    P. Roche;G. Gasiot;K. Forbes;V. O'Sullivan

  • Heavy ion testing and 3D simulations of Multiple Cell Upset in 65nm standard SRAMs

    D. Giot;P. Roche;G. Gasiot;J.L. Autran

  • Single Event Upset and Multiple Cell Upset Modeling in Commercial Bulk 65-nm CMOS SRAMs and Flip-Flops

    Slawosz Uznanski;Gilles Gasiot;Philippe Roche;Clement Tavernier

  • A Comprehensive Study on the Soft-Error Rate of Flip-Flops From 90-nm Production Libraries

    T. Heijmen;P. Roche;G. Gasiot;K.R. Forbes

  • Criterion for SEU occurrence in SRAM deduced from circuit and device Simulations in case of neutron-induced SER

    T. Merelle;H. Chabane;J.-M. Palau;K. Castellani-Coulie

  • Multiple-Bit Upset Analysis in 90 nm SRAMs: Heavy Ions Testing and 3D Simulations

    D. Giot;P. Roche;G. Gasiot;R. Harboe-Sorensen

  • Altitude and Underground Real-Time SER Characterization of CMOS 65 nm SRAM

    J.L. Autran;P. Roche;S. Sauze;G. Gasiot

  • Heavy Ion Testing and 3-D Simulations of Multiple Cell Upset in 65 nm Standard SRAMs

    D. Giot;P. Roche;G. Gasiot;J.-L. Autran

  • Alpha-Induced Multiple Cell Upsets in Standard and Radiation Hardened SRAMs Manufactured in a 65 nm CMOS Technology

    G. Gasiot;D. Giot;P. Roche

  • Characterization of the parasitic bipolar amplification in SOI technologies submitted to transient irradiation

    V. Ferlet-Cavrois;C. Marcandella;G. Giraud;G. Gasiot

  • A Commercial 65 nm CMOS Technology for Space Applications: Heavy Ion, Proton and Gamma Test Results and Modeling

    Philippe Roche;Gilles Gasiot;Slawosz Uznanski;Jean-Marc Daveau

  • SEU sensitivity of bulk and SOI technologies to 14-MeV neutrons

    G. Gasiot;V. Ferlet-Cavrois;J. Baggio;P. Roche

  • Scaled IT-Bulk devices built with CMOS 90nm technology for low-cost eDRAM applications

    R. Ranica;A. Villaret;P. Malinge;G. Gasiot

  • SER/SEL performances of SRAMs in UTBB FDSOI28 and comparisons with PDSOI and BULK counterparts

    Gilles Gasiot;Dimitri Soussan;Maximilien Glorieux;Cyril Bottoni

  • Monte-Carlo simulations to quantify neutron-induced multiple bit upsets in advanced SRAMs

    T. Merelle;F. Saigne;B. Sagnes;G. Gasiot

  • Soft-Error Rate Induced by Thermal and Low Energy Neutrons in 40 nm SRAMs

    J. L. Autran;S. Serre;S. Semikh;D. Munteanu

  • An industrial fault injection platform for soft-error dependability analysis and hardening of complex system-on-a-chip

    Jean-Marc Daveau;Alexandre Blampey;Gilles Gasiot;Joseph Bulone

  • Real-time Soft-Error testing of 40nm SRAMs

    J.L. Autran;S. Serre;D. Munteanu;S. Martinie

Frequent Co-Authors

Daniela Munteanu
Daniela Munteanu Aix-Marseille University
Jean-Luc Autran
Jean-Luc Autran University of Rennes
Alessandro Paccagnella
Alessandro Paccagnella University of Padua
O. Faynot
O. Faynot CEA LETI
Robert A. Reed
Robert A. Reed Vanderbilt University
Robert A. Weller
Robert A. Weller Woods Hole Oceanographic Institution

External Links

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Best Scientists Citing Gilles Gasiot

Bharat L. Bhuva

Bharat L. Bhuva

Vanderbilt University

Publications: 36

Daniela Munteanu

Daniela Munteanu

Aix-Marseille University

Publications: 30

Lloyd W. Massengill

Lloyd W. Massengill

Vanderbilt University

Publications: 28

Alessandro Paccagnella

Alessandro Paccagnella

University of Padua

Publications: 27

Ronald D. Schrimpf

Ronald D. Schrimpf

Vanderbilt University

Publications: 26

P. Paillet

P. Paillet

French Alternative Energies and Atomic Energy Commission (CEA)

Publications: 17

Robert A. Reed

Robert A. Reed

Vanderbilt University

Publications: 16

Mehdi B. Tahoori

Mehdi B. Tahoori

Karlsruhe Institute of Technology

Publications: 11

Patrick Girard

Patrick Girard

Montpellier Laboratory of Informatics, Robotics and Microelectronics

Publications: 11

Paul E. Dodd

Paul E. Dodd

Sandia National Laboratories

Publications: 11

J.R. Schwank

J.R. Schwank

Sandia National Laboratories

Publications: 10

Robert A. Weller

Robert A. Weller

Woods Hole Oceanographic Institution

Publications: 9

M. L. Alles

M. L. Alles

Vanderbilt University

Publications: 9

Dale McMorrow

Dale McMorrow

United States Naval Research Laboratory

Publications: 9

Marty R. Shaneyfelt

Marty R. Shaneyfelt

Sandia National Laboratories

Publications: 9

Hiroshi Kawaguchi

Hiroshi Kawaguchi

University of Tokyo

Publications: 8

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