World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
30
Citations
2929
World Ranking
6866
National Ranking
102

Overview

Gilles Gasiot is affiliated with STMicroelectronics (Switzerland) and has contributed extensively to the fields of engineering and physics, with a primary focus on electrical and electronic engineering. Their research spans multiple subfields including instrumentation, hardware and architecture, radiation, and aerospace engineering. The scientist has published work covering various interrelated topics within these areas.

Their main research topics include:

  • Radiation Effects in Electronics
  • Advanced Optical Sensing Technologies
  • CCD and CMOS Imaging Sensors
  • Integrated Circuits and Semiconductor Failure Analysis
  • Semiconductor Materials and Devices
  • VLSI and Analog Circuit Testing
  • Radiation Detection and Scintillator Technologies

Gasiot's publications appear predominantly in the journal IEEE Transactions on Nuclear Science, where they have at least 13 papers, along with a contribution to Microelectronics Reliability. Their work has been coauthored frequently with several researchers, including Victor Malherbe, Jean-Luc Autran, Thomas Thery, Philippe Roché, and Bastien Mamdy.

Representative recent papers include:

  • TIARA: Industrial Platform for Monte Carlo Single-Event Simulations in Planar Bulk, FD-SOI, and FinFET (2021), IEEE Transactions on Nuclear Science
  • Proton-Induced Displacement Damages in 2-D and Stacked CMOS SPADs: Study of Dark Count Rate Degradation (2023), IEEE Transactions on Nuclear Science
  • Displacement Damage Characterization of CMOS Single-Photon Avalanche Diodes: Alpha-Particle and Fast-Neutron Measurements (2021), IEEE Transactions on Nuclear Science
  • On-Chip Total Ionizing Dose Digital Monitor in Fully Depleted SOI Technologies (2020), IEEE Transactions on Nuclear Science
  • Real-Time Characterization of Neutron-Induced SEUs in Fusion Experiments at WEST Tokamak During D-D Plasma Operation (2022), IEEE Transactions on Nuclear Science

The research addresses topics in radiation effects and detection, including simulation platforms and characterization of displacement damage in semiconductor devices under particle irradiation. These efforts contribute to understanding the impact of radiation on integrated circuits and semiconductor sensors, relevant to sectors such as nuclear science, aerospace engineering, and advanced optical sensing technology.

Best Publications

  • Multiple Cell Upsets as the Key Contribution to the Total SER of 65 nm CMOS SRAMs and Its Dependence on Well Engineering

    G. Gasiot;D. Giot;P. Roche

  • Technology downscaling worsening radiation effects in bulk: SOI to the rescue

    Philippe Roche;Jean-Luc Autran;Gilles Gasiot;Daniela Munteanu

  • Impacts of front-end and middle-end process modifications on terrestrial soft error rate

    P. Roche;G. Gasiot

  • Insights on the transient response of fully and partially depleted SOI technologies under heavy-ion and dose-rate irradiations

    V. Ferlet-Cavrois;G. Gasiot;C. Marcandella;C. D'Hose

  • Comparisons of soft error rate for SRAMs in commercial SOI and bulk below the 130-nm technology node

    P. Roche;G. Gasiot;K. Forbes;V. O'Sullivan

  • Heavy ion testing and 3D simulations of Multiple Cell Upset in 65nm standard SRAMs

    D. Giot;P. Roche;G. Gasiot;J.L. Autran

  • Single Event Upset and Multiple Cell Upset Modeling in Commercial Bulk 65-nm CMOS SRAMs and Flip-Flops

    Slawosz Uznanski;Gilles Gasiot;Philippe Roche;Clement Tavernier

  • A Comprehensive Study on the Soft-Error Rate of Flip-Flops From 90-nm Production Libraries

    T. Heijmen;P. Roche;G. Gasiot;K.R. Forbes

  • Criterion for SEU occurrence in SRAM deduced from circuit and device Simulations in case of neutron-induced SER

    T. Merelle;H. Chabane;J.-M. Palau;K. Castellani-Coulie

  • Multiple-Bit Upset Analysis in 90 nm SRAMs: Heavy Ions Testing and 3D Simulations

    D. Giot;P. Roche;G. Gasiot;R. Harboe-Sorensen

  • Altitude and Underground Real-Time SER Characterization of CMOS 65 nm SRAM

    J.L. Autran;P. Roche;S. Sauze;G. Gasiot

  • Heavy Ion Testing and 3-D Simulations of Multiple Cell Upset in 65 nm Standard SRAMs

    D. Giot;P. Roche;G. Gasiot;J.-L. Autran

  • Alpha-Induced Multiple Cell Upsets in Standard and Radiation Hardened SRAMs Manufactured in a 65 nm CMOS Technology

    G. Gasiot;D. Giot;P. Roche

  • Characterization of the parasitic bipolar amplification in SOI technologies submitted to transient irradiation

    V. Ferlet-Cavrois;C. Marcandella;G. Giraud;G. Gasiot

  • A Commercial 65 nm CMOS Technology for Space Applications: Heavy Ion, Proton and Gamma Test Results and Modeling

    Philippe Roche;Gilles Gasiot;Slawosz Uznanski;Jean-Marc Daveau

  • SEU sensitivity of bulk and SOI technologies to 14-MeV neutrons

    G. Gasiot;V. Ferlet-Cavrois;J. Baggio;P. Roche

  • Scaled IT-Bulk devices built with CMOS 90nm technology for low-cost eDRAM applications

    R. Ranica;A. Villaret;P. Malinge;G. Gasiot

  • SER/SEL performances of SRAMs in UTBB FDSOI28 and comparisons with PDSOI and BULK counterparts

    Gilles Gasiot;Dimitri Soussan;Maximilien Glorieux;Cyril Bottoni

  • Monte-Carlo simulations to quantify neutron-induced multiple bit upsets in advanced SRAMs

    T. Merelle;F. Saigne;B. Sagnes;G. Gasiot

  • Soft-Error Rate Induced by Thermal and Low Energy Neutrons in 40 nm SRAMs

    J. L. Autran;S. Serre;S. Semikh;D. Munteanu

  • An industrial fault injection platform for soft-error dependability analysis and hardening of complex system-on-a-chip

    Jean-Marc Daveau;Alexandre Blampey;Gilles Gasiot;Joseph Bulone

  • Real-time Soft-Error testing of 40nm SRAMs

    J.L. Autran;S. Serre;D. Munteanu;S. Martinie

Frequent Co-Authors

Daniela Munteanu
Daniela Munteanu Aix-Marseille University
Alessandro Paccagnella
Alessandro Paccagnella University of Padua
O. Faynot
O. Faynot CEA LETI
Robert A. Reed
Robert A. Reed Vanderbilt University

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