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Daniela Munteanu

Daniela Munteanu

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
32
Citations
3949
World Ranking
6361
National Ranking
133

Overview

Daniela Munteanu is affiliated with Aix-Marseille University in France. Their research spans the fields of engineering and medicine, with a focus on electrical and electronic engineering, epidemiology, radiation, hepatology, and aerospace engineering.

Their main research topics include:

  • Radiation Effects in Electronics
  • Semiconductor materials and devices
  • Liver Disease Diagnosis and Treatment
  • Radiation Detection and Scintillator Technologies
  • Advancements in Semiconductor Devices and Circuit Design
  • Hepatitis C virus research
  • Hepatitis B Virus Studies

Frequent publication venues where Daniela Munteanu has contributed include:

  • IEEE Transactions on Nuclear Science
  • Crystals
  • Microelectronics Reliability
  • Scientific Reports
  • Nuclear Fusion

Among recent notable papers are:

  • "Response guided therapy for reducing duration of direct acting antivirals in chronic hepatitis C infected patients: a Pilot study" (2020, Scientific Reports)
  • "Atmospheric Neutron Radiation Response of III-V Binary Compound Semiconductors" (2020, IEEE Transactions on Nuclear Science)
  • "EUROfusion contributions to ITER nuclear operation" (2024, Nuclear Fusion)
  • "Multiscale, Multiphysics Modeling and Simulation of Single-Event Effects in Digital Electronics: From Particles to Systems" (2023, IEEE Transactions on Nuclear Science)
  • "Real-Time Characterization of Neutron-Induced SEUs in Fusion Experiments at WEST Tokamak During D-D Plasma Operation" (2022, IEEE Transactions on Nuclear Science)

Frequent co-authors in Daniela Munteanu's work include Jean-Luc Autran, Naim Abu-Freha, S. Moindjie, Ohad Etzion, and David Yardeni.

Daniela Munteanu has also contributed to book publications, including a title published by IntechOpen titled "Advances in Semiconductor Physics, Devices and Quantum Dots - Nanotechnology and Future Challenges" (2023).

Best Publications

  • Influence of band structure on electron ballistic transport in silicon nanowire MOSFET’s: An atomistic study

    K. Nehari;N. Cavassilas;Jean-Luc Autran;M. Bescond

  • A review of the pseudo-MOS transistor in SOI wafers: operation, parameter extraction, and applications

    S. Cristoloveanu;D. Munteanu;M.S.T. Liu

  • Modeling and Simulation of Single-Event Effects in Digital Devices and ICs

    D. Munteanu;J.-L. Autran

  • Technology downscaling worsening radiation effects in bulk: SOI to the rescue

    Philippe Roche;Jean-Luc Autran;Gilles Gasiot;Daniela Munteanu

  • Influence of band-structure on electron ballistic transport in silicon nanowire MOSFET's: an atomistic study

    K. Nehari;N. Cavassilas;J.L. Autran;M. Bescond

  • Poly-gate replacement through contact hole (PRETCH): a new method for high-k/metal gate and multi-oxide implementation on chip

    S. Harrison;P. Coronel;A. Cros;R. Cerutti

  • Two-dimensional modeling of quantum ballistic transport in ultimate double-gate SOI devices

    Daniela Munteanu;Jean-Luc Autran

  • Quantum Short-channel Compact Modelling of Drain-Current in Double-Gate MOSFET

    Daniela Munteanu;Jean-Luc Autran;Xavier Loussier;Samuel Harrison

  • Strained FDSOI CMOS technology scalability down to 2.5nm film thickness and 18nm gate length with a TiN/HfO 2 gate stack

    V. Barral;T. Poiroux;F. Andrieu;C. Buj-Dufournet

  • Altitude and Underground Real-Time SER Characterization of CMOS 65 nm SRAM

    J.L. Autran;P. Roche;S. Sauze;G. Gasiot

  • 3D quantum modeling and simulation of multiple-gate nanowire MOSFETs

    M. Bescond;K. Nehari;J.L. Autran;N. Cavassilas

  • Generation-recombination transient effects in partially depleted SOI transistors: systematic experiments and simulations

    D. Munteanu;D.A. Weiser;S. Cristoloveanu;O. Faynot

  • Scaling of high-k/metal-gate Trigate SOI nanowire transistors down to 10nm width

    R. Coquand;S. Barraud;M. Casse;P. Leroux

  • Scaling of high-κ/metal-gate TriGate SOI nanowire transistors down to 10 nm width

    R. Coquand;R. Coquand;S. Barraud;M. Casse;P. Leroux

  • Highly performant double gate MOSFET realized with SON process

    S. Harrison;P. Coronel;F. Leverd;R. Cerutti

  • Soft Errors : From Particles to Circuits

    Daniela Munteanu

  • Experimental Investigation on the Quasi-Ballistic Transport: Part I—Determination of a New Backscattering Coefficient Extraction Methodology

    V. Barral;T. Poiroux;J. Saint-Martin;D. Munteanu

  • Investigation of Quantum Effects in Ultra-Thin Body Single- and Double-Gate Devices Submitted to Heavy Ion Irradiation

    D. Munteanu;V. Ferlet-Cavrois;J.L. Autran;P. Paillet

  • Experimental Investigation on the Quasi-Ballistic Transport: Part II—Backscattering Coefficient Extraction and Link With the Mobility

    V. Barral;T. Poiroux;D. Munteanu;J.-L. Autran

  • Modeling of drain current overshoot and recombination lifetime extraction in floating-body submicron SOI MOSFETs

    D. Munteanu;A.-M. Ionescu

  • Atomic-scale modeling of double-gate MOSFETs using a tight-binding Green’s function formalism

    M Bescond;Jean-Luc Autran;Daniela Munteanu;M Lannoo

Frequent Co-Authors

Gilles Gasiot
Gilles Gasiot STMicroelectronics (Switzerland)
Sorin Cristoloveanu
Sorin Cristoloveanu Grenoble Institute of Technology
O. Faynot
O. Faynot CEA LETI
Michel Houssa
Michel Houssa KU Leuven
P. Paillet
P. Paillet French Alternative Energies and Atomic Energy Commission (CEA)
Thomas Skotnicki
Thomas Skotnicki Warsaw University of Technology
Gerard Ghibaudo
Gerard Ghibaudo Grenoble Alpes University
Adrian M. Ionescu
Adrian M. Ionescu École Polytechnique Fédérale de Lausanne
Yasuo Takahashi
Yasuo Takahashi Hokkaido University

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