World's Best Scientists 2026 revealed!
Daniela Munteanu

Daniela Munteanu

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
32
Citations
3949
World Ranking
6360
National Ranking
134

Daniela Munteanu publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Daniela Munteanu sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 215 publications — 34th percentile

34% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Daniela Munteanu D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Daniela Munteanu sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 32 D-Index — 10th percentile

10% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Daniela Munteanu is affiliated with Aix-Marseille University in France. Their research spans the fields of engineering and medicine, with a focus on electrical and electronic engineering, epidemiology, radiation, hepatology, and aerospace engineering.

Their main research topics include:

  • Radiation Effects in Electronics
  • Semiconductor materials and devices
  • Liver Disease Diagnosis and Treatment
  • Radiation Detection and Scintillator Technologies
  • Advancements in Semiconductor Devices and Circuit Design
  • Hepatitis C virus research
  • Hepatitis B Virus Studies

Frequent publication venues where Daniela Munteanu has contributed include:

  • IEEE Transactions on Nuclear Science
  • Crystals
  • Microelectronics Reliability
  • Scientific Reports
  • Nuclear Fusion

Among recent notable papers are:

  • "Response guided therapy for reducing duration of direct acting antivirals in chronic hepatitis C infected patients: a Pilot study" (2020, Scientific Reports)
  • "Atmospheric Neutron Radiation Response of III-V Binary Compound Semiconductors" (2020, IEEE Transactions on Nuclear Science)
  • "EUROfusion contributions to ITER nuclear operation" (2024, Nuclear Fusion)
  • "Multiscale, Multiphysics Modeling and Simulation of Single-Event Effects in Digital Electronics: From Particles to Systems" (2023, IEEE Transactions on Nuclear Science)
  • "Real-Time Characterization of Neutron-Induced SEUs in Fusion Experiments at WEST Tokamak During D-D Plasma Operation" (2022, IEEE Transactions on Nuclear Science)

Frequent co-authors in Daniela Munteanu's work include Jean-Luc Autran, Naim Abu-Freha, S. Moindjie, Ohad Etzion, and David Yardeni.

Daniela Munteanu has also contributed to book publications, including a title published by IntechOpen titled "Advances in Semiconductor Physics, Devices and Quantum Dots - Nanotechnology and Future Challenges" (2023).

Best Publications

  • Influence of band structure on electron ballistic transport in silicon nanowire MOSFET’s: An atomistic study

    K. Nehari;N. Cavassilas;Jean-Luc Autran;M. Bescond

  • A review of the pseudo-MOS transistor in SOI wafers: operation, parameter extraction, and applications

    S. Cristoloveanu;D. Munteanu;M.S.T. Liu

  • Modeling and Simulation of Single-Event Effects in Digital Devices and ICs

    D. Munteanu;J.-L. Autran

  • Technology downscaling worsening radiation effects in bulk: SOI to the rescue

    Philippe Roche;Jean-Luc Autran;Gilles Gasiot;Daniela Munteanu

  • Influence of band-structure on electron ballistic transport in silicon nanowire MOSFET's: an atomistic study

    K. Nehari;N. Cavassilas;J.L. Autran;M. Bescond

  • Poly-gate replacement through contact hole (PRETCH): a new method for high-k/metal gate and multi-oxide implementation on chip

    S. Harrison;P. Coronel;A. Cros;R. Cerutti

  • Two-dimensional modeling of quantum ballistic transport in ultimate double-gate SOI devices

    Daniela Munteanu;Jean-Luc Autran

  • Quantum Short-channel Compact Modelling of Drain-Current in Double-Gate MOSFET

    Daniela Munteanu;Jean-Luc Autran;Xavier Loussier;Samuel Harrison

  • Strained FDSOI CMOS technology scalability down to 2.5nm film thickness and 18nm gate length with a TiN/HfO 2 gate stack

    V. Barral;T. Poiroux;F. Andrieu;C. Buj-Dufournet

  • Altitude and Underground Real-Time SER Characterization of CMOS 65 nm SRAM

    J.L. Autran;P. Roche;S. Sauze;G. Gasiot

  • 3D quantum modeling and simulation of multiple-gate nanowire MOSFETs

    M. Bescond;K. Nehari;J.L. Autran;N. Cavassilas

  • Generation-recombination transient effects in partially depleted SOI transistors: systematic experiments and simulations

    D. Munteanu;D.A. Weiser;S. Cristoloveanu;O. Faynot

  • Scaling of high-k/metal-gate Trigate SOI nanowire transistors down to 10nm width

    R. Coquand;S. Barraud;M. Casse;P. Leroux

  • Scaling of high-κ/metal-gate TriGate SOI nanowire transistors down to 10 nm width

    R. Coquand;R. Coquand;S. Barraud;M. Casse;P. Leroux

  • Highly performant double gate MOSFET realized with SON process

    S. Harrison;P. Coronel;F. Leverd;R. Cerutti

  • Soft Errors : From Particles to Circuits

    Daniela Munteanu

  • Experimental Investigation on the Quasi-Ballistic Transport: Part I—Determination of a New Backscattering Coefficient Extraction Methodology

    V. Barral;T. Poiroux;J. Saint-Martin;D. Munteanu

  • Investigation of Quantum Effects in Ultra-Thin Body Single- and Double-Gate Devices Submitted to Heavy Ion Irradiation

    D. Munteanu;V. Ferlet-Cavrois;J.L. Autran;P. Paillet

  • Experimental Investigation on the Quasi-Ballistic Transport: Part II—Backscattering Coefficient Extraction and Link With the Mobility

    V. Barral;T. Poiroux;D. Munteanu;J.-L. Autran

  • Modeling of drain current overshoot and recombination lifetime extraction in floating-body submicron SOI MOSFETs

    D. Munteanu;A.-M. Ionescu

  • Atomic-scale modeling of double-gate MOSFETs using a tight-binding Green’s function formalism

    M Bescond;Jean-Luc Autran;Daniela Munteanu;M Lannoo

Frequent Co-Authors

Jean-Luc Autran
Jean-Luc Autran University of Rennes
Gilles Gasiot
Gilles Gasiot STMicroelectronics (Switzerland)
Sorin Cristoloveanu
Sorin Cristoloveanu Grenoble Institute of Technology
P. Paillet
P. Paillet French Alternative Energies and Atomic Energy Commission (CEA)
O. Faynot
O. Faynot CEA LETI
Michel Houssa
Michel Houssa KU Leuven
Thomas Skotnicki
Thomas Skotnicki Warsaw University of Technology
Adrian M. Ionescu
Adrian M. Ionescu École Polytechnique Fédérale de Lausanne
Gerard Ghibaudo
Gerard Ghibaudo Grenoble Alpes University

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Related Online Degrees & Career Pathways

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