World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
61
Citations
16018
World Ranking
1515
National Ranking
34

Denis Flandre publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Denis Flandre sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 1,151 publications — 99th percentile

99% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Denis Flandre D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Denis Flandre sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 61 D-Index — 78th percentile

78% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Denis Flandre is affiliated with the Université Catholique de Louvain in Belgium. Their research spans engineering and materials science, with a particular focus on electrical and electronic engineering as well as materials chemistry. The work also extends into biomedical engineering, atomic and molecular physics and optics, and polymers and plastics.

The main topics covered in their research include semiconductor materials and devices, advancements in semiconductor devices and circuit design, chalcogenide semiconductor thin films, quantum dots synthesis and properties, thin-film transistor technologies, semiconductor materials and interfaces, and nanowire synthesis and applications.

Frequent co-authors collaborating with Flandre are:

  • Jean-Pierre Raskin
  • Guoli Li
  • Valeriya Kilchytska
  • Nicolas Roisin
  • Romain Scaffidi

The scientist has published extensively in several venues, including:

  • Solid-State Electronics
  • Journal of Integrated Circuits and Systems
  • IEEE Transactions on Electron Devices
  • Applied Physics Letters
  • arXiv (Cornell University)

Selected recent papers by Denis Flandre include:

  • "Ge-alloyed kesterite thin-film solar cells: previous investigations and current status - a comprehensive review," 2023, Journal of Materials Chemistry A
  • "Radiometric Partial Discharge Detection: A Review," 2023, Energies
  • "28-nm FD-SOI CMOS RF Figures of Merit Down to 4.2 K," 2020, IEEE Journal of the Electron Devices Society
  • "Optimization of Back Contact Grid Size in Al2O3-Rear-Passivated Ultrathin CIGS PV Cells by 2-D Simulations," 2020, IEEE Journal of Photovoltaics
  • "SleepRunner: A 28-nm FDSOI ULP Cortex-M0 MCU With ULL SRAM and UFBR PVT Compensation for 2.6-3.6-μW/DMIPS 40-80-MHz Active Mode and 131-nW/kB Fully Retentive Deep-Sleep Mode," 2021, IEEE Journal of Solid-State Circuits

Best Publications

  • A g/sub m//I/sub D/ based methodology for the design of CMOS analog circuits and its application to the synthesis of a silicon-on-insulator micropower OTA

    F. Silveira;D. Flandre;P.G.A. Jespers

  • A Formal Study of Power Variability Issues and Side-Channel Attacks for Nanoscale Devices

    Mathieu Renauld;François-Xavier Standaert;Nicolas Veyrat-Charvillon;Dina Kamel

  • Substrate crosstalk reduction using SOI technology

    J.-P. Raskin;A. Viviani;D. Flandre;J.-P. Colinge

  • Influence of device engineering on the analog and RF performances of SOI MOSFETs

    V. Kilchytska;A. Neve;L. Vancaillie;D. Levacq

  • Interests and Limitations of Technology Scaling for Subthreshold Logic

    D. Bol;R. Ambroise;D. Flandre;J.-D. Legat

  • A Capacitorless 1T-DRAM on SOI Based on Dynamic Coupling and Double-Gate Operation

    M. Bawedin;S. Cristoloveanu;D. Flandre

  • Modeling of ultrathin double-gate nMOS/SOI transistors

    P. Francis;A. Terao;D. Flandre;F. Van de Wiele

  • ULPFA: A New Efficient Design of a Power-Aware Full Adder

    Ilham Hassoune;Denis Flandre;Ian O'Connor;Jean-Didier Legat

  • Fabrication method of so1 semiconductor devices

    Denis Fladre;Amaury De Mevergnies;Jean-Pierre Raskins

  • SleepWalker: A 25-MHz 0.4-V Sub- $\hbox{mm}^{2}$ 7- $\mu\hbox{W/MHz}$ Microcontroller in 65-nm LP/GP CMOS for Low-Carbon Wireless Sensor Nodes

    D. Bol;J. De Vos;C. Hocquet;F. Botman

  • Employing Si solar cell technology to increase efficiency of ultra-thin Cu(In,Ga)Se2 solar cells.

    Bart Vermang;Jörn Timo Wätjen;Viktor Fjällström;Fredrik Rostvall

  • Comparison of TiSi2 , CoSi2, and NiSi for Thin‐Film Silicon‐on‐Insulator Applications

    J. Chen;J.‐P. Colinge;D. Flandre;R. Gillon

  • Design of SOI CMOS operational amplifiers for applications up to 300/spl deg/C

    J.-P. Eggermont;D. De Ceuster;D. Flandre;B. Gentinne

  • Micromachined thin-film sensors for SOI-CMOS co-integration

    Jean Laconte;Denis Flandre;Jean-Pierre Raskin

  • Analog/RF performance of multiple gate SOI devices: wideband simulations and characterization

    J.-P. Raskin;Tsung Ming Chung;V. Kilchytska;D. Lederer

  • Improved synthesis of gain-boosted regulated-cascode CMOS stages using symbolic analysis and gm/ID methodology

    D. Flandre;A. Viviani;J.-P. Eggermont;B. Gentinne

  • FinFET analogue characterization from DC to 110 GHz

    Dimitri Lederer;Valeriya Kilchytska;Tamara Rudenko;Nadine Collaert

  • Laterally asymmetric channel engineering in fully depleted double gate SOI MOSFETs for high performance analog applications

    Abhinav Kranti;Tsung Ming Chung;Denis Flandre;Jean-Pierre Raskin

  • Analog performance and application of graded-channel fully depleted SOI MOSFETs

    Marcelo Antonio Pavanello;João Antonio Martino;Vincent Dessard;Denis Flandre

  • Measurement of threshold voltages of thin-film accumulation-mode PMOS/SOI transistors

    A. Terao;D. Flandre;E. Lora-Tamayo;F. Van de Wiele

Frequent Co-Authors

Jean-Pierre Raskin
Jean-Pierre Raskin Université Catholique de Louvain
Jean-Pierre Colinge
Jean-Pierre Colinge University of California, Davis
Benjamin Iniguez
Benjamin Iniguez Rovira i Virgili University
Sorin Cristoloveanu
Sorin Cristoloveanu Grenoble Institute of Technology
Florin Udrea
Florin Udrea University of Cambridge
François-Xavier Standaert
François-Xavier Standaert Université Catholique de Louvain
José Remacle
José Remacle University of Namur

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