World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
61
Citations
16018
World Ranking
1515
National Ranking
34

Overview

Denis Flandre is affiliated with the Université Catholique de Louvain in Belgium. Their research spans engineering and materials science, with a particular focus on electrical and electronic engineering as well as materials chemistry. The work also extends into biomedical engineering, atomic and molecular physics and optics, and polymers and plastics.

The main topics covered in their research include semiconductor materials and devices, advancements in semiconductor devices and circuit design, chalcogenide semiconductor thin films, quantum dots synthesis and properties, thin-film transistor technologies, semiconductor materials and interfaces, and nanowire synthesis and applications.

Frequent co-authors collaborating with Flandre are:

  • Jean-Pierre Raskin
  • Guoli Li
  • Valeriya Kilchytska
  • Nicolas Roisin
  • Romain Scaffidi

The scientist has published extensively in several venues, including:

  • Solid-State Electronics
  • Journal of Integrated Circuits and Systems
  • IEEE Transactions on Electron Devices
  • Applied Physics Letters
  • arXiv (Cornell University)

Selected recent papers by Denis Flandre include:

  • "Ge-alloyed kesterite thin-film solar cells: previous investigations and current status - a comprehensive review," 2023, Journal of Materials Chemistry A
  • "Radiometric Partial Discharge Detection: A Review," 2023, Energies
  • "28-nm FD-SOI CMOS RF Figures of Merit Down to 4.2 K," 2020, IEEE Journal of the Electron Devices Society
  • "Optimization of Back Contact Grid Size in Al2O3-Rear-Passivated Ultrathin CIGS PV Cells by 2-D Simulations," 2020, IEEE Journal of Photovoltaics
  • "SleepRunner: A 28-nm FDSOI ULP Cortex-M0 MCU With ULL SRAM and UFBR PVT Compensation for 2.6-3.6-μW/DMIPS 40-80-MHz Active Mode and 131-nW/kB Fully Retentive Deep-Sleep Mode," 2021, IEEE Journal of Solid-State Circuits

Best Publications

  • A g/sub m//I/sub D/ based methodology for the design of CMOS analog circuits and its application to the synthesis of a silicon-on-insulator micropower OTA

    F. Silveira;D. Flandre;P.G.A. Jespers

  • A Formal Study of Power Variability Issues and Side-Channel Attacks for Nanoscale Devices

    Mathieu Renauld;François-Xavier Standaert;Nicolas Veyrat-Charvillon;Dina Kamel

  • Substrate crosstalk reduction using SOI technology

    J.-P. Raskin;A. Viviani;D. Flandre;J.-P. Colinge

  • Influence of device engineering on the analog and RF performances of SOI MOSFETs

    V. Kilchytska;A. Neve;L. Vancaillie;D. Levacq

  • Interests and Limitations of Technology Scaling for Subthreshold Logic

    D. Bol;R. Ambroise;D. Flandre;J.-D. Legat

  • A Capacitorless 1T-DRAM on SOI Based on Dynamic Coupling and Double-Gate Operation

    M. Bawedin;S. Cristoloveanu;D. Flandre

  • Modeling of ultrathin double-gate nMOS/SOI transistors

    P. Francis;A. Terao;D. Flandre;F. Van de Wiele

  • ULPFA: A New Efficient Design of a Power-Aware Full Adder

    Ilham Hassoune;Denis Flandre;Ian O'Connor;Jean-Didier Legat

  • Fabrication method of so1 semiconductor devices

    Denis Fladre;Amaury De Mevergnies;Jean-Pierre Raskins

  • SleepWalker: A 25-MHz 0.4-V Sub- $\hbox{mm}^{2}$ 7- $\mu\hbox{W/MHz}$ Microcontroller in 65-nm LP/GP CMOS for Low-Carbon Wireless Sensor Nodes

    D. Bol;J. De Vos;C. Hocquet;F. Botman

  • Employing Si solar cell technology to increase efficiency of ultra-thin Cu(In,Ga)Se2 solar cells.

    Bart Vermang;Jörn Timo Wätjen;Viktor Fjällström;Fredrik Rostvall

  • Comparison of TiSi2 , CoSi2, and NiSi for Thin‐Film Silicon‐on‐Insulator Applications

    J. Chen;J.‐P. Colinge;D. Flandre;R. Gillon

  • Design of SOI CMOS operational amplifiers for applications up to 300/spl deg/C

    J.-P. Eggermont;D. De Ceuster;D. Flandre;B. Gentinne

  • Micromachined thin-film sensors for SOI-CMOS co-integration

    Jean Laconte;Denis Flandre;Jean-Pierre Raskin

  • Analog/RF performance of multiple gate SOI devices: wideband simulations and characterization

    J.-P. Raskin;Tsung Ming Chung;V. Kilchytska;D. Lederer

  • Improved synthesis of gain-boosted regulated-cascode CMOS stages using symbolic analysis and gm/ID methodology

    D. Flandre;A. Viviani;J.-P. Eggermont;B. Gentinne

  • FinFET analogue characterization from DC to 110 GHz

    Dimitri Lederer;Valeriya Kilchytska;Tamara Rudenko;Nadine Collaert

  • Laterally asymmetric channel engineering in fully depleted double gate SOI MOSFETs for high performance analog applications

    Abhinav Kranti;Tsung Ming Chung;Denis Flandre;Jean-Pierre Raskin

  • Analog performance and application of graded-channel fully depleted SOI MOSFETs

    Marcelo Antonio Pavanello;João Antonio Martino;Vincent Dessard;Denis Flandre

  • Measurement of threshold voltages of thin-film accumulation-mode PMOS/SOI transistors

    A. Terao;D. Flandre;E. Lora-Tamayo;F. Van de Wiele

Frequent Co-Authors

Jean-Pierre Raskin
Jean-Pierre Raskin Université Catholique de Louvain
Jean-Pierre Colinge
Jean-Pierre Colinge University of California, Davis
Benjamin Iniguez
Benjamin Iniguez Rovira i Virgili University
Sorin Cristoloveanu
Sorin Cristoloveanu Grenoble Institute of Technology
Florin Udrea
Florin Udrea University of Cambridge
Lei Liao
Lei Liao Hunan University
Marika Edoff
Marika Edoff Uppsala University

If you think any of the details on this page are incorrect, let us know.

Report an issue

We appreciate your kind effort to assist us to improve this page, it would be helpful providing us with as much detail as possible in the text box below:

Related Online Degrees & Career Pathways

Pursuing a degree in Electronics and Electrical Engineering offers diverse career opportunities, but flexibility in education is often key. Many students, including military spouses, benefit from attending online schools for military spouses that accommodate their unique lifestyle and commitments.

Choosing the right program can be easier with options like online universities with multiple start dates, which allow students to begin courses at their convenience, reducing wait times and enhancing degree completion rates.

For those looking to quickly enter the workforce or boost skills, 6-month certificate programs that pay well provide an attractive pathway. These certificates can supplement knowledge in specialized areas like circuit design, automation, or energy systems, opening doors to higher-paying roles.

Additionally, certain roles within Electronics and Electrical Engineering cater well to different personality types. For example, individuals seeking environments with less social interaction might explore some of the best jobs for introverts that leverage technical expertise while offering autonomy.

Best Scientists Citing Denis Flandre

Trending Scientists