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D-Index & Metrics

Electronics and Electrical Engineering

D-Index
35
Citations
4687
World Ranking
5611
National Ranking
68

Overview

Abhinav Kranti is affiliated with the Indian Institute of Technology Indore in India. Their research primarily focuses on the field of Engineering, with a concentration in Electrical and Electronic Engineering. Their work extends into subfields including Atomic and Molecular Physics, and Optics, Biomedical Engineering, Control and Systems Engineering, as well as Hardware and Architecture.

The main topics addressed in Kranti's research include semiconductor materials and devices, advancements in semiconductor devices and circuit design, and ferroelectric and negative capacitance devices. Additional areas of interest involve advanced memory and neural computing, quantum and electron transport phenomena, low-power high-performance VLSI design, and nanowire synthesis and applications.

The scientist has published extensively in well-known venues, with frequent contributions to IEEE Transactions on Electron Devices and Semiconductor Science and Technology. Other notable publication venues include Solid-State Electronics, the Journal of Integrated Circuits and Systems, and IEEE Transactions on Circuits and Systems I Regular Papers.

  • Analog Operation Temperature Dependence of nMOS Junctionless Transistors Focusing on Harmonic Distortion (2020, Journal of Integrated Circuits and Systems)
  • Limits on Hysteresis-Free Sub-60 mV/Decade Operation of MFIS Nanowire Transistor (2020, IEEE Transactions on Electron Devices)
  • An Insightful Assessment of 1T-DRAM With Misaligned Polarity Gate in RFET (2022, IEEE Transactions on Electron Devices)
  • Unconventional VTC of subthreshold inverter with MFMIS negative capacitance transistor: An analytical modelling framework with implications for ultralow power logic design (2022, Semiconductor Science and Technology)
  • Analytical modeling of negative capacitance transistor based ultra low power Schmitt trigger (2023, Solid-State Electronics)

Kranti collaborates frequently with several coauthors who have contributed significantly to their research output. Regular collaborators include Sandeep Semwal, Rohit Kumar Nirala, Nivedita Rai, Nivedita Jaiswal, and Arghya Singha Roy.

Best Publications

  • Junctionless nanowire transistor (JNT): Properties and design guidelines

    A. Kranti;R. Yan;C.-W. Lee;I. Ferain

  • Junctionless Multiple-Gate Transistors for Analog Applications

    R. T. Doria;M. A. Pavanello;R. D. Trevisoli;M. de Souza

  • Junctionless nanowire transistor (JNT): Properties and design guidelines

    Unknown

  • Junctionless Transistors: Physics and Properties

    J. P. Colinge;C. W. Lee;N. Dehdashti Akhavan;R. Yan

  • Laterally asymmetric channel engineering in fully depleted double gate SOI MOSFETs for high performance analog applications

    Abhinav Kranti;Tsung Ming Chung;Denis Flandre;Jean-Pierre Raskin

  • High-Performance Junctionless MOSFETs for Ultralow-Power Analog/RF Applications

    D. Ghosh;M. S. Parihar;G. A. Armstrong;A. Kranti

  • Design and Optimization of FinFETs for Ultra-Low-Voltage Analog Applications

    Unknown

  • Ultra Low Power Junctionless MOSFETs for Subthreshold Logic Applications

    Mukta Singh Parihar;Dipankar Ghosh;Abhinav Kranti

  • Forming-free high-endurance Al/ZnO/Al memristor fabricated by dual ion beam sputtering

    Amitesh Kumar;Mangal Das;Vivek Garg;Brajendra S. Sengar

  • Analytical model for threshold voltage and I–V characteristics of fully depleted short channel cylindrical/surrounding gate MOSFET

    Unknown

  • Performance assessment of nanoscale double- and triple-gate FinFETs

    Unknown

  • Source/Drain Extension Region Engineering in FinFETs for Low-Voltage Analog Applications

    Unknown

  • Dielectric Modulated Biosensor Architecture: Tunneling or Accumulation Based Transistor?

    Praveen Dwivedi;Abhinav Kranti

  • Engineering source/drain extension regions in nanoscale double gate (DG) SOI MOSFETs: Analytical model and design considerations

    Unknown

  • Enhanced sensitivity of double gate junctionless transistor architecture for biosensing applications

    Mukta Singh Parihar;Abhinav Kranti

  • Mobility improvement in nanowire junctionless transistors by uniaxial strain

    Jean-Pierre Raskin;Jean-Pierre Colinge;Isabelle Ferain;Abhinav Kranti

  • Junctionless 6T SRAM cell

    A. Kranti;C.-W. Lee;I. Ferain;R. Yan

  • Applicability of Transconductance-to-Current Ratio ( $g_{\mathrm {m}}/I_{\mathrm {ds}}$ ) as a Sensing Metric for Tunnel FET Biosensors

    Praveen Dwivedi;Abhinav Kranti

  • Junctionless Nanowire Transistor: Complementary Metal-Oxide-Semiconductor Without Junctions

    Jean-Pierre Colinge;Isabelle Ferain;Abhinav Kranti;Chi-Woo Lee

  • Gate-All-Around Nanowire Junctionless Transistor-Based Hydrogen Gas Sensor

    Siddharth Mokkapati;Nivedita Jaiswal;Manish Gupta;Abhinav Kranti

  • Revisiting the doping requirement for low power junctionless MOSFETs

    Mukta Singh Parihar;Abhinav Kranti

  • Improved Retention Time in Twin Gate 1T DRAM With Tunneling Based Read Mechanism

    Nupur Navlakha;Jyi-Tsong Lin;Abhinav Kranti

  • Overcoming Biomolecule Location-Dependent Sensitivity Degradation Through Point and Line Tunneling in Dielectric Modulated Biosensors

    Praveen Dwivedi;Abhinav Kranti

  • Short-Channel Junctionless Nanowire Transistors

    C. W. Lee;I. Ferain;A. Kranti;N. Dehdashti Akhavan

  • Bipolar effects in unipolar junctionless transistors

    Mukta Singh Parihar;Dipankar Ghosh;G. Alastair Armstrong;Ran Yu

  • Investigation of high-performance sub-50 nm junctionless nanowire transistors

    Ran Yan;Abhinav Kranti;Isabelle Ferain;Chi-Woo Lee

  • Mobility improvement in nanowire junctionless transistors by uniaxial strain

    J.-P. Raskin;J.-P. Colinge;I. Ferain;A. Kranti

Frequent Co-Authors

Isabelle Ferain
Isabelle Ferain GlobalFoundries (United States)
Jean-Pierre Colinge
Jean-Pierre Colinge University of California, Davis
Jean-Pierre Raskin
Jean-Pierre Raskin Université Catholique de Louvain
Sorin Cristoloveanu
Sorin Cristoloveanu Grenoble Institute of Technology
Mridula Gupta
Mridula Gupta University of Delhi

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