World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
34
Citations
10587
World Ranking
5678
National Ranking
1930

Isabelle Ferain publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Isabelle Ferain sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 134 publications — 10th percentile

10% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Isabelle Ferain D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Isabelle Ferain sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 34 D-Index — 18th percentile

18% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Isabelle Ferain is a researcher affiliated with GlobalFoundries in the United States. Their work primarily spans the field of Engineering, with specific focus areas including Electrical and Electronic Engineering as well as Biomedical Engineering. The main topics of their research encompass advancements in semiconductor devices and circuit design, semiconductor materials and devices, and nanowire synthesis and applications.

The scientist has contributed to the following recent paper:

  • Analog Operation Temperature Dependence of nMOS Junctionless Transistors Focusing on Harmonic Distortion (2020), published in the Journal of Integrated Circuits and Systems

Ferain has frequently published in the Journal of Integrated Circuits and Systems, which is the principal venue associated with their body of work.

Frequent co-authors collaborating with Isabelle Ferain include:

  • Rodrigo T. Doria
  • Marcelo Antonio Pavanello
  • Renan Trevisoli
  • Michelly de Souza
  • Chi-Woo Lee

The focus of their research follows an interdisciplinary approach that integrates device fabrication and performance analysis in semiconductors, particularly exploring the temperature dependence and harmonic distortion characteristics of junctionless transistors. This intersects with their expertise in nanowire technologies and materials science.

Best Publications

  • Nanowire transistors without junctions

    Jean-Pierre Colinge;Chi-Woo Lee;Aryan Afzalian;Aryan Afzalian;Nima Dehdashti Akhavan

  • Junctionless multigate field-effect transistor

    Chi-Woo Lee;Aryan Afzalian;Nima Dehdashti Akhavan;Ran Yan

  • Multigate transistors as the future of classical metal–oxide–semiconductor field-effect transistors

    Isabelle Ferain;Cynthia A. Colinge;Jean-Pierre Colinge

  • Performance estimation of junctionless multigate transistors

    Chi-Woo Lee;Isabelle Ferain;Aryan Afzalian;Ran Yan

  • Junctionless nanowire transistor (JNT): Properties and design guidelines

    A. Kranti;R. Yan;C.-W. Lee;I. Ferain

  • High-Temperature Performance of Silicon Junctionless MOSFETs

    Chi-Woo Lee;A. Borne;I. Ferain;A. Afzalian

  • Reduced electric field in junctionless transistors

    Jean-Pierre Colinge;Chi-Woo Lee;Isabelle Ferain;Nima Dehdashti Akhavan

  • Transport spectroscopy of a single dopant in a gated silicon nanowire.

    H. Sellier;G. P. Lansbergen;J. Caro;S. Rogge

  • Junctionless Multiple-Gate Transistors for Analog Applications

    R. T. Doria;M. A. Pavanello;R. D. Trevisoli;M. de Souza

  • Low subthreshold slope in junctionless multigate transistors

    Chi-Woo Lee;Alexei N. Nazarov;Isabelle Ferain;Nima Dehdashti Akhavan

  • Junctionless nanowire transistor (JNT): Properties and design guidelines

    Unknown

  • SOI gated resistor: CMOS without junctions

    J.P. Colinge;C.W. Lee;A. Afzalian;N. Dehdashti

  • Junctionless Transistors: Physics and Properties

    J. P. Colinge;C. W. Lee;N. Dehdashti Akhavan;R. Yan

  • Multi-gate devices for the 32 nm technology node and beyond

    N. Collaert;A. De Keersgieter;A. Dixit;I. Ferain

  • Errata to “Surface-Potential-Based Drain Current Analytical Model for Triple-Gate Junctionless Nanowire Transistors”

    R. D. Trevisoli;R. T. Doria;M. de Souza;S. Das

  • Tall triple-gate devices with TiN/HfO/sub 2/ gate stack

    N. Collaert;M. Demand;I. Ferain;J. Lisoni

  • Multi-gate devices for the 32nm technology node and beyond

    N. Collaert;A. De Keersgieter;A. Dixit;I. Ferain

  • Mobility improvement in nanowire junctionless transistors by uniaxial strain

    Jean-Pierre Raskin;Jean-Pierre Colinge;Isabelle Ferain;Abhinav Kranti

  • Subthreshold channels at the edges of nanoscale triple-gate silicon transistors

    H. Sellier;G. P. Lansbergen;J. Caro;S. Rogge

  • Low temperature germanium to silicon direct wafer bonding using free radical exposure

    Ki Yeol Byun;Isabelle Ferain;Peter G. Fleming;Michael A. Morris

  • Junctionless 6T SRAM cell

    A. Kranti;C.-W. Lee;I. Ferain;R. Yan

  • Sub-threshold channels at the edges of nanoscale triple-gate silicon transistors

    H. Sellier;G. P. Lansbergen;J. Caro;N. Collaert

Frequent Co-Authors

Jean-Pierre Colinge
Jean-Pierre Colinge University of California, Davis
Abhinav Kranti
Abhinav Kranti Indian Institute of Technology Indore
K. De Meyer
K. De Meyer KU Leuven
Luigi Pantisano
Luigi Pantisano Intel (United States)
Christopher W. Lee
Christopher W. Lee University of Western Australia

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