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Abdelkarim Mercha

Abdelkarim Mercha

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
40
Citations
6251
World Ranking
4521
National Ranking
98

Overview

Abdelkarim Mercha is affiliated with Imec in Belgium and focuses their research on engineering, specifically within electrical and electronic engineering. Their work primarily addresses advancements in semiconductor devices and circuit design as well as semiconductor materials and devices. Their research also covers integrated circuits and semiconductor failure analysis.

Mercha's recent publication is titled "Plasma Charging Damage in HK-First and HK-Last RMG NMOS Devices", published in 2021 by the IEEE Transactions on Device and Materials Reliability. This paper explores challenges related to plasma charging damage in advanced semiconductor devices.

Frequent coauthors collaborating with Mercha include:

  • Gaspard Hiblot
  • Narendra Parihar
  • Emmanuel Dupuy
  • G. Mannaert
  • S. Baudot

Mercha's publication venues demonstrate a focus on high-impact journals related to device reliability, with work published in the IEEE Transactions on Device and Materials Reliability.

The topics of Mercha's research work include:

  • Advancements in Semiconductor Devices and Circuit Design
  • Semiconductor materials and devices
  • Integrated Circuits and Semiconductor Failure Analysis

The breadth of Mercha's research lies at the intersection of developing new semiconductor device technologies and analyzing the reliability and failure mechanisms affecting integrated circuits. Their contributions support ongoing efforts to refine materials and device architectures for improved performance and durability within electronic systems.

Best Publications

  • Design Issues and Considerations for Low-Cost 3-D TSV IC Technology

    G Van der Plas;P Limaye;I Loi;A Mercha

  • Vertical GAAFETs for the Ultimate CMOS Scaling

    Dmitry Yakimets;Geert Eneman;Pieter Schuddinck;Trong Huynh Bao

  • A 5 GHz fully integrated ESD-protected low-noise amplifier in 90 nm RF CMOS

    D. Linten;S. Thijs;M.I. Natarajan;P. Wambacq

  • Planar Bulk MOSFET s Versus FinFETs: An Analog/RF Perspective

    V. Subramanian;B. Parvais;J. Borremans;A. Mercha

  • 3D stacked IC demonstration using a through Silicon Via First approach

    J. Van Olmen;A. Mercha;G. Katti;C. Huyghebaert

  • "Linear kink effect" induced by electron valence band tunneling in ultrathin gate oxide bulk and SOI MOSFETS

    A. Mercha;J.M. Rafi;E. Simoen;E. Augendre

  • Benchmarking SOI and bulk FinFET alternatives for PLANAR CMOS scaling succession

    T. Chiarella;L. Witters;A. Mercha;C. Kerner

  • Comprehensive analysis of the impact of single and arrays of through silicon vias induced stress on high-k / metal gate CMOS performance

    A. Mercha;G. Van der Plas;V. Moroz;I. De Wolf

  • Multi-gate devices for the 32 nm technology node and beyond

    N. Collaert;A. De Keersgieter;A. Dixit;I. Ferain

  • Low-frequency noise behavior of SiO/sub 2/--HfO/sub 2/ dual-layer gate dielectric nMOSFETs with different interfacial oxide thickness

    E. Simoen;A. Mercha;L. Pantisano;C. Claeys

  • Impact of Wire Geometry on Interconnect RC and Circuit Delay

    Ivan Ciofi;Antonino Contino;Philippe J. Roussel;Rogier Baert

  • Low-power 5 GHz LNA and VCO in 90 nm RF CMOS

    D. Linten;L. Aspemyr;W. Jeamsaksiri;J. Ramos

  • Impact of fin width on digital and analog performances of n-FinFETs

    Vaidyanathan Subramanian;A Mercha;B Parvais;J Loo

  • Self-heating on bulk FinFET from 14nm down to 7nm node

    D. Jang;E. Bury;R. Ritzenthaler;M. Garcia Bardon

  • Experimental assessment of self-heating in SOI FinFETs

    A.J. Scholten;G.D.J. Smit;R.M.T. Pijper;L.F. Tiemeijer

  • Double-Gate finFETs as a CMOS Technology Downscaling Option: An RF Perspective

    S. Nuttinck;B. Parvais;G. Curatola;A. Mercha

  • Multi-gate devices for the 32nm technology node and beyond

    N. Collaert;A. De Keersgieter;A. Dixit;I. Ferain

  • 3D stacked ICs using Cu TSVs and Die to Wafer Hybrid Collective bonding

    G. Katti;A. Mercha;J. Van Olmen;C. Huyghebaert

  • Low-frequency noise in silicon-on-insulator devices and technologies

    Eddy Simoen;Abdelkarim Mercha;Corneel Claeys;N Lukyanchikova

  • Dependence of finFET RF performance on fin width

    D. Lederer;B. Parvais;A. Mercha;N. Collaert

Frequent Co-Authors

Eddy Simoen
Eddy Simoen Ghent University
Cor Claeys
Cor Claeys KU Leuven
Piet Wambacq
Piet Wambacq Vrije Universiteit Brussel
Aaron Thean
Aaron Thean National University of Singapore

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