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Electronics and Electrical Engineering

D-Index
56
Citations
15726
World Ranking
2032
National Ranking
45

Overview

Eddy Simoen is a researcher affiliated with Ghent University in Belgium, specializing in fields related to engineering, particularly electrical and electronic engineering. Their work spans various subfields including biomedical engineering, condensed matter physics, atomic and molecular physics, optics, and materials chemistry.

The researcher's focus covers numerous topics within semiconductor technology and device research. These topics include:

  • Semiconductor materials and devices
  • Advancements in semiconductor devices and circuit design
  • GaN-based semiconductor devices and materials
  • Nanowire synthesis and applications
  • Integrated circuits and semiconductor failure analysis
  • Silicon carbide semiconductor technologies
  • Ferroelectric and negative capacitance devices

Several recent papers illustrate the scope and depth of their research activity:

  • "Mitigating Dark Current for High-Performance Near-Infrared Organic Photodiodes via Charge Blocking and Defect Passivation", 2021, ACS Applied Materials & Interfaces
  • "Low-Frequency Noise Investigation of GaN/AlGaN Metal-Oxide-Semiconductor High-Electron-Mobility Field-Effect Transistor With Different Gate Length and Orientation", 2020, IEEE Transactions on Electron Devices
  • "Defect profiling in FEFET Si:HfO2 layers", 2020, Applied Physics Letters
  • "Analog Figures of Merit of Vertically Stacked Silicon Nanosheets nMOSFETs With Two Different Metal Gates for the Sub-7 nm Technology Node Operating at High Temperatures", 2021, IEEE Transactions on Electron Devices
  • "Low-Frequency Noise in Vertically Stacked Si n-Channel Nanosheet FETs", 2020, IEEE Electron Device Letters

Their frequent co-authors reflect a collaborative research approach. Notable co-authors include:

  • A. Veloso
  • Cor Claeys
  • João Antônio Martino
  • Paula Ghedini Der Agopian
  • B. Cretu

Publications by Eddy Simoen are often found in specialized academic venues related to electronics and semiconductor devices. These venues include:

  • Solid-State Electronics
  • Journal of Integrated Circuits and Systems
  • ECS Meeting Abstracts
  • IEEE Transactions on Electron Devices
  • ECS Transactions

Their research contributions are situated primarily within engineering, highlighting electrical and electronic engineering as the dominant field of study. Specific interest is seen in semiconductor materials and device performance, especially for advanced device technologies and circuit design.

Best Publications

  • On the flicker noise in submicron silicon MOSFETs

    Eddy Simoen;Cor Claeys

  • Origin of NBTI variability in deeply scaled pFETs

    B. Kaczer;T. Grasser;Ph. J. Roussel;J. Franco

  • Explaining the amplitude of RTS noise in submicrometer MOSFETs

    E. Simoen;B. Dierickx;C.L. Claeys;G.J. Declerck

  • Diffusion, activation and recrystallization of boron implanted in preamorphized and crystalline germanium

    A. Satta;E. Simoen;T. Clarysse;T. Janssens

  • "Linear kink effect" induced by electron valence band tunneling in ultrathin gate oxide bulk and SOI MOSFETS

    A. Mercha;J.M. Rafi;E. Simoen;E. Augendre

  • Ion-implantation issues in the formation of shallow junctions in germanium

    Eddy Simoen;Alessandra Satta;Antonio D'Amore;Tom Janssens

  • $1/f$ Noise in Drain and Gate Current of MOSFETs With High- $k$ Gate Stacks

    P. Magnone;F. Crupi;G. Giusi;C. Pace

  • Radiation Effects in Advanced Multiple Gate and Silicon-on-Insulator Transistors

    E. Simoen;M. Gaillardin;P. Paillet;R. A. Reed

  • Low-frequency noise behavior of SiO/sub 2/--HfO/sub 2/ dual-layer gate dielectric nMOSFETs with different interfacial oxide thickness

    E. Simoen;A. Mercha;L. Pantisano;C. Claeys

  • NBTI from the perspective of defect states with widely distributed time scales

    B. Kaczer;T. Grasser;J. Martin-Martinez;E. Simoen

  • Diffusion, activation, and regrowth behavior of high dose P implants in Ge

    Alessandra Satta;Eddy Simoen;Ray Duffy;Tom Janssens

  • Impact strain engineering on gate stack quality and reliability

    Corneel Claeys;Eddy Simoen;Sofie Put;G. Giusi

  • Low-Frequency Noise Analysis and Modeling in Vertical Tunnel FETs With Ge Source

    Felipe S. Neves;Paula G. D. Agopian;Joao Antonio Martino;Bogdan Cretu

  • Model for hysteresis and kink behavior of MOS transistors operating at 4.2 K

    B. Dierickx;L. Warmerdam;E.R. Simoen;J. Vermeiren

  • Shallow Junction Ion Implantation in Ge and Associated Defect Control

    A. Satta;E. Simoen;T. Janssens;T. Clarysse

  • Impact of Donor Concentration, Electric Field, and Temperature Effects on the Leakage Current in Germanium p $+/$ n Junctions

    G. Eneman;M. Wiot;A. Brugere;O.S.I. Casain

  • Challenges and opportunities in advanced Ge pMOSFETs

    E Simoen;J Mitard;Geert Hellings;Geert Eneman

  • Impact of Fe and Cu Contamination on the Minority Carrier Lifetime of Silicon Substrates

    A. L. P. Rotondaro;T. Q. Hurd;A. Kaniava;J. Vanhellemont

  • Border Traps in Ge/III–V Channel Devices: Analysis and Reliability Aspects

    Eddy Simoen;Dennis Han-Chung Lin;A. Alian;G. Brammertz

  • Random Telegraph Signal: a local probe for single point defect studies in solid-state devices

    E. Simoen;C. Claeys

  • The kink-related excess low-frequency noise in silicon-on-insulator MOST's

    E. Simoen;U. Magnusson;A.L.P. Rotondaro

  • The low-frequency noise behaviour of silicon-on-insulator technologies

    Eddy Simoen;Cor Claeys

  • Experimental Comparison Between Trigate p-TFET and p-FinFET Analog Performance as a Function of Temperature

    Paula Ghedini Der Agopian;Joao Antonio Martino;Rita Rooyackers;Anne Vandooren

  • Brother Silicon, Sister Germanium

    Unknown

Frequent Co-Authors

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