D-Index & Metrics Best Publications

D-Index & Metrics D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines.

Discipline name D-index D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines. Citations Publications World Ranking National Ranking
Electronics and Electrical Engineering D-index 42 Citations 9,614 960 World Ranking 2477 National Ranking 50

Overview

What is he best known for?

The fields of study he is best known for:

  • Semiconductor
  • Electrical engineering
  • Electron

Eddy Simoen mainly focuses on Optoelectronics, Electrical engineering, MOSFET, Noise and Transistor. His Optoelectronics research incorporates elements of PMOS logic, Gate dielectric and Gate oxide. Electrical engineering and Infrasound are frequently intertwined in his study.

His MOSFET study integrates concerns from other disciplines, such as Wafer, Electron mobility, Germanium, Function and Quantum tunnelling. His Noise study also includes fields such as

  • Electronic engineering together with Negative-bias temperature instability,
  • Noise spectral density most often made with reference to Transconductance. His Field-effect transistor study in the realm of Transistor connects with subjects such as Total dose.

His most cited work include:

  • Origin of NBTI variability in deeply scaled pFETs (243 citations)
  • On the flicker noise in submicron silicon MOSFETs (227 citations)
  • Explaining the amplitude of RTS noise in submicrometer MOSFETs (126 citations)

What are the main themes of his work throughout his whole career to date?

Eddy Simoen mainly investigates Optoelectronics, Silicon, Silicon on insulator, Electrical engineering and MOSFET. His Optoelectronics research is multidisciplinary, incorporating elements of Noise, Transistor, Irradiation and Infrasound. His Infrasound course of study focuses on Flicker noise and Noise spectral density.

His work carried out in the field of Silicon brings together such families of science as Annealing, Doping and Analytical chemistry. His Silicon on insulator research is multidisciplinary, relying on both Threshold voltage, Transconductance and Voltage. His study in MOSFET is interdisciplinary in nature, drawing from both Depletion region, Electronic engineering, Logic gate, Condensed matter physics and Gate oxide.

He most often published in these fields:

  • Optoelectronics (64.84%)
  • Silicon (25.97%)
  • Silicon on insulator (23.44%)

What were the highlights of his more recent work (between 2014-2021)?

  • Optoelectronics (64.84%)
  • Silicon (25.97%)
  • Infrasound (15.68%)

In recent papers he was focusing on the following fields of study:

Eddy Simoen focuses on Optoelectronics, Silicon, Infrasound, Transistor and Electrical engineering. He works in the field of Optoelectronics, namely Silicon on insulator. His Silicon study incorporates themes from Annealing, Epitaxy, Superlattice and Analytical chemistry.

The Infrasound study which covers Scattering that intersects with Electron mobility. His research in Transistor intersects with topics in Thermal conduction, Communication channel and Leakage. His Threshold voltage research includes themes of Electronic engineering and Condensed matter physics.

Between 2014 and 2021, his most popular works were:

  • Gate-all-around NWFETs vs. triple-gate FinFETs: Junctionless vs. extensionless and conventional junction devices with controlled EWF modulation for multi-VT CMOS (32 citations)
  • Junctionless gate-all-around lateral and vertical nanowire FETs with simplified processing for advanced logic and analog/RF applications and scaled SRAM cells (24 citations)
  • Review—Carrier Lifetime Spectroscopy for Defect Characterization in Semiconductor Materials and Devices (24 citations)

In his most recent research, the most cited papers focused on:

  • Semiconductor
  • Electron
  • Transistor

Optoelectronics, Silicon, Infrasound, Noise and Silicon on insulator are his primary areas of study. His Optoelectronics study combines topics from a wide range of disciplines, such as Metal gate, Transistor and Electrical engineering, Logic gate. His work deals with themes such as Threshold voltage, Crystallographic defect and Analytical chemistry, which intersect with Silicon.

The various areas that Eddy Simoen examines in his Infrasound study include Flicker noise, Quality and Scattering. The Noise study combines topics in areas such as Wafer, Amplitude, Signal, Electronic engineering and Gate oxide. His Silicon on insulator research also works with subjects such as

  • Generation–recombination noise that connect with fields like Fermi level,
  • Condensed matter physics, which have a strong connection to Oxide.

This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.

Best Publications

On the flicker noise in submicron silicon MOSFETs

Eddy Simoen;Cor Claeys.
Solid-state Electronics (1999)

348 Citations

On the flicker noise in submicron silicon MOSFETs

Eddy Simoen;Cor Claeys.
Solid-state Electronics (1999)

348 Citations

Origin of NBTI variability in deeply scaled pFETs

B. Kaczer;T. Grasser;Ph. J. Roussel;J. Franco.
international reliability physics symposium (2010)

339 Citations

Origin of NBTI variability in deeply scaled pFETs

B. Kaczer;T. Grasser;Ph. J. Roussel;J. Franco.
international reliability physics symposium (2010)

339 Citations

Explaining the amplitude of RTS noise in submicrometer MOSFETs

E. Simoen;B. Dierickx;C.L. Claeys;G.J. Declerck.
IEEE Transactions on Electron Devices (1992)

184 Citations

Explaining the amplitude of RTS noise in submicrometer MOSFETs

E. Simoen;B. Dierickx;C.L. Claeys;G.J. Declerck.
IEEE Transactions on Electron Devices (1992)

184 Citations

"Linear kink effect" induced by electron valence band tunneling in ultrathin gate oxide bulk and SOI MOSFETS

A. Mercha;J.M. Rafi;E. Simoen;E. Augendre.
IEEE Transactions on Electron Devices (2003)

155 Citations

"Linear kink effect" induced by electron valence band tunneling in ultrathin gate oxide bulk and SOI MOSFETS

A. Mercha;J.M. Rafi;E. Simoen;E. Augendre.
IEEE Transactions on Electron Devices (2003)

155 Citations

Ion-implantation issues in the formation of shallow junctions in germanium

Eddy Simoen;Alessandra Satta;Antonio D'Amore;Tom Janssens.
Materials Science in Semiconductor Processing (2006)

150 Citations

Ion-implantation issues in the formation of shallow junctions in germanium

Eddy Simoen;Alessandra Satta;Antonio D'Amore;Tom Janssens.
Materials Science in Semiconductor Processing (2006)

150 Citations

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