Eddy Simoen mainly focuses on Optoelectronics, Electrical engineering, MOSFET, Noise and Transistor. His Optoelectronics research incorporates elements of PMOS logic, Gate dielectric and Gate oxide. Electrical engineering and Infrasound are frequently intertwined in his study.
His MOSFET study integrates concerns from other disciplines, such as Wafer, Electron mobility, Germanium, Function and Quantum tunnelling. His Noise study also includes fields such as
Eddy Simoen mainly investigates Optoelectronics, Silicon, Silicon on insulator, Electrical engineering and MOSFET. His Optoelectronics research is multidisciplinary, incorporating elements of Noise, Transistor, Irradiation and Infrasound. His Infrasound course of study focuses on Flicker noise and Noise spectral density.
His work carried out in the field of Silicon brings together such families of science as Annealing, Doping and Analytical chemistry. His Silicon on insulator research is multidisciplinary, relying on both Threshold voltage, Transconductance and Voltage. His study in MOSFET is interdisciplinary in nature, drawing from both Depletion region, Electronic engineering, Logic gate, Condensed matter physics and Gate oxide.
Eddy Simoen focuses on Optoelectronics, Silicon, Infrasound, Transistor and Electrical engineering. He works in the field of Optoelectronics, namely Silicon on insulator. His Silicon study incorporates themes from Annealing, Epitaxy, Superlattice and Analytical chemistry.
The Infrasound study which covers Scattering that intersects with Electron mobility. His research in Transistor intersects with topics in Thermal conduction, Communication channel and Leakage. His Threshold voltage research includes themes of Electronic engineering and Condensed matter physics.
Optoelectronics, Silicon, Infrasound, Noise and Silicon on insulator are his primary areas of study. His Optoelectronics study combines topics from a wide range of disciplines, such as Metal gate, Transistor and Electrical engineering, Logic gate. His work deals with themes such as Threshold voltage, Crystallographic defect and Analytical chemistry, which intersect with Silicon.
The various areas that Eddy Simoen examines in his Infrasound study include Flicker noise, Quality and Scattering. The Noise study combines topics in areas such as Wafer, Amplitude, Signal, Electronic engineering and Gate oxide. His Silicon on insulator research also works with subjects such as
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On the flicker noise in submicron silicon MOSFETs
Eddy Simoen;Cor Claeys.
Solid-state Electronics (1999)
On the flicker noise in submicron silicon MOSFETs
Eddy Simoen;Cor Claeys.
Solid-state Electronics (1999)
Origin of NBTI variability in deeply scaled pFETs
B. Kaczer;T. Grasser;Ph. J. Roussel;J. Franco.
international reliability physics symposium (2010)
Origin of NBTI variability in deeply scaled pFETs
B. Kaczer;T. Grasser;Ph. J. Roussel;J. Franco.
international reliability physics symposium (2010)
Explaining the amplitude of RTS noise in submicrometer MOSFETs
E. Simoen;B. Dierickx;C.L. Claeys;G.J. Declerck.
IEEE Transactions on Electron Devices (1992)
Explaining the amplitude of RTS noise in submicrometer MOSFETs
E. Simoen;B. Dierickx;C.L. Claeys;G.J. Declerck.
IEEE Transactions on Electron Devices (1992)
"Linear kink effect" induced by electron valence band tunneling in ultrathin gate oxide bulk and SOI MOSFETS
A. Mercha;J.M. Rafi;E. Simoen;E. Augendre.
IEEE Transactions on Electron Devices (2003)
"Linear kink effect" induced by electron valence band tunneling in ultrathin gate oxide bulk and SOI MOSFETS
A. Mercha;J.M. Rafi;E. Simoen;E. Augendre.
IEEE Transactions on Electron Devices (2003)
Ion-implantation issues in the formation of shallow junctions in germanium
Eddy Simoen;Alessandra Satta;Antonio D'Amore;Tom Janssens.
Materials Science in Semiconductor Processing (2006)
Ion-implantation issues in the formation of shallow junctions in germanium
Eddy Simoen;Alessandra Satta;Antonio D'Amore;Tom Janssens.
Materials Science in Semiconductor Processing (2006)
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