World's Best Scientists 2026 revealed!
Jacopo Franco

Jacopo Franco

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
38
Citations
6202
World Ranking
4902
National Ranking
106

Jacopo Franco publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Jacopo Franco sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 297 publications — 57th percentile

57% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Jacopo Franco D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Jacopo Franco sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 38 D-Index — 30th percentile

30% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Jacopo Franco is affiliated with Imec in Belgium and has contributed extensively to the engineering field, particularly in the domain of electrical and electronic engineering. Their work spans multiple subfields including atomic and molecular physics and optics, electronic, optical and magnetic materials, materials chemistry, and condensed matter physics.

The primary focus of Jacopo Franco's research lies in semiconductor materials and devices, with numerous publications addressing advancements in semiconductor devices and circuit design. They have also covered topics related to integrated circuits and semiconductor failure analysis, thin-film transistor technologies, silicon and solar cell technologies, ferroelectric and negative capacitance devices, and copper interconnects and reliability.

Frequent co-authors of Jacopo Franco include B. Kaczer, Naoto Horiguchi, Adrian Chasin, Ingrid De Wolf, and E. Dentoni Litta.

Publication venues where Jacopo Franco has regularly contributed include:

  • IEEE Transactions on Electron Devices
  • Solid-State Electronics
  • 2022 IEEE International Reliability Physics Symposium (IRPS)
  • IEEE Transactions on Device and Materials Reliability
  • 2021 IEEE International Electron Devices Meeting (IEDM)

Recent notable papers authored or co-authored by Jacopo Franco include:

  • Understanding and modelling the PBTI reliability of thin-film IGZO transistors, 2021, 2021 IEEE International Electron Devices Meeting (IEDM)
  • Understanding the Excess 1/f Noise in MOSFETs at Cryogenic Temperatures, 2023, IEEE Transactions on Electron Devices
  • Comphy v3.0-A compact-physics framework for modeling charge trapping related reliability phenomena in MOS devices, 2023, Microelectronics Reliability
  • Demonstration of 3D sequential FD-SOI on CMOS FinFET stacking featuring low temperature Si layer transfer and top tier device fabrication with tier interconnections, 2022, 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)
  • Simulation Comparison of Hot-Carrier Degradation in Nanowire, Nanosheet and Forksheet FETs, 2022, 2022 IEEE International Reliability Physics Symposium (IRPS)

Best Publications

  • The Paradigm Shift in Understanding the Bias Temperature Instability: From Reaction–Diffusion to Switching Oxide Traps

    T. Grasser;B. Kaczer;W. Goes;H. Reisinger

  • Origin of NBTI variability in deeply scaled pFETs

    B. Kaczer;T. Grasser;Ph. J. Roussel;J. Franco

  • Comphy — A compact-physics framework for unified modeling of BTI

    Gerhard Rzepa;Jacopo Franco;Barry J. O'Sullivan;A. Subirats

  • Switching oxide traps as the missing link between negative bias temperature instability and random telegraph noise

    T. Grasser;H. Reisinger;W. Goes;Th. Aichinger

  • Recent advances in understanding the bias temperature instability

    T. Grasser;B. Kaczer;W. Goes;H. Reisinger

  • From mean values to distributions of BTI lifetime of deeply scaled FETs through atomistic understanding of the degradation

    M. Toledano-Luque;B. Kaczer;J. Franco;Ph.J. Roussel

  • Impact of single charged gate oxide defects on the performance and scaling of nanoscaled FETs

    J. Franco;B. Kaczer;M. Toledano-Luque;Ph. J. Roussel

  • A unified perspective of RTN and BTI

    Tibor Grasser;Karsten Rott;H. Reisinger;M. Waltl

  • Insight Into N/PBTI Mechanisms in Sub-1-nm-EOT Devices

    Moonju Cho;Jae-Duk Lee;M. Aoulaiche;B. Kaczer

  • The ‘permanent’ component of NBTI: Composition and annealing

    T. Grasser;Th. Aichinger;G. Pobegen;H. Reisinger

  • SiGe Channel Technology: Superior Reliability Toward Ultrathin EOT Devices—Part I: NBTI

    J. Franco;B. Kaczer;P. J. Roussel;J. Mitard

  • Predictive Hot-Carrier Modeling of n-Channel MOSFETs

    Markus Bina;Stanislav Tyaginov;Jacopo Franco;Karl Rupp

  • Understanding and Modeling the Temperature Behavior of Hot-Carrier Degradation in SiON nMOSFETs

    Stanislav Tyaginov;Markus Jech;Jacopo Franco;Prateek Sharma

  • Response of a single trap to AC negative Bias Temperature stress

    M. Toledano-Luque;B. Kaczer;Ph.J. Roussel;T. Grasser

  • Channel Hot Carrier Degradation Mechanism in Long/Short Channel $n$ -FinFETs

    Moonju Cho;Philippe Roussel;Ben Kaczer;Robin Degraeve

  • Toward Understanding Positive Bias Temperature Instability in Fully Recessed-Gate GaN MISFETs

    Tian-Li Wu;Jacopo Franco;Denis Marcon;Brice De Jaeger

  • Understanding and modelling the PBTI reliability of thin-film IGZO transistors

    Unknown

  • Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors

    Tian-Li Wu;Denis Marcon;Benoit Bakeroot;Brice De Jaeger

  • Understanding the suppressed charge trapping in relaxed- and strained-Ge/SiO 2 /HfO 2 pMOSFETs and implications for the screening of alternative high-mobility substrate/dielectric CMOS gate stacks

    J. Franco;B. Kaczer;Ph J. Roussel;J. Mitard

  • Degradation of time dependent variability due to interface state generation

    M. Toledano-Luque;B. Kaczer;J. Franco;Ph J. Roussel

  • Gate-all-around InGaAs nanowire FETS with peak transconductance of 2200μS/μm at 50nm Lg using a replacement Fin RMG flow

    N. Waldron;S. Sioncke;J. Franco;L. Nyns

  • A brief overview of gate oxide defect properties and their relation to MOSFET instabilities and device and circuit time-dependent variability

    Ben Kaczer;Jacopo Franco;Pieter Weckx;Philippe Roussel

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