World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
43
Citations
8352
World Ranking
3869
National Ranking
37

Souvik Mahapatra publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Souvik Mahapatra sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 273 publications — 51st percentile

51% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Souvik Mahapatra D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Souvik Mahapatra sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 43 D-Index — 45th percentile

45% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Souvik Mahapatra is affiliated with the Indian Institute of Technology Bombay in India. Their research primarily focuses on the field of engineering, with a specific emphasis on electrical and electronic engineering. Contributions also extend to materials chemistry, atomic and molecular physics, optics, computer networks and communications, and electronic, optical, and magnetic materials.

The main topics of their work include semiconductor materials and devices, advancements in semiconductor devices and circuit design, ferroelectric and negative capacitance devices, silicon carbide semiconductor technologies, integrated circuits and semiconductor failure analysis, electrostatic discharge in electronics, and advanced data storage technologies.

Publication venues frequently hosting their research include:

  • IEEE Transactions on Electron Devices
  • Solid-State Electronics
  • IEEE Transactions on Device and Materials Reliability
  • IEEE Journal of the Electron Devices Society
  • 2022 IEEE International Reliability Physics Symposium (IRPS)

Frequent coauthors collaborating with Souvik Mahapatra are:

  • Nilotpal Choudhury
  • Narendra Parihar
  • Uma Sharma
  • Himanshu Diwakar
  • Karansingh Thakor

Recent papers authored or coauthored by them include:

  • "Ultrathin ferroic HfO2-ZrO2 superlattice gate stack for advanced transistors," 2022, Nature
  • "A Review of Hot Carrier Degradation in n-Channel MOSFETs-Part I: Physical Mechanism," 2020, IEEE Transactions on Electron Devices
  • "Modeling of NBTI Using BAT Framework: DC-AC Stress-Recovery Kinetics, Material, and Process Dependence," 2020, IEEE Transactions on Device and Materials Reliability
  • "A Review of Hot Carrier Degradation in n-Channel MOSFETs-Part II: Technology Scaling," 2020, IEEE Transactions on Electron Devices
  • "A Generic Trap Generation Framework for MOSFET Reliability-Part I: Gate Only Stress-BTI, SILC, and TDDB," 2023, IEEE Transactions on Electron Devices

Best Publications

  • A comprehensive model of PMOS NBTI degradation

    Muhammad Ashraful Alam;S. Mahapatra

  • Critical Role of Interlayer in Hf 0.5 Zr 0.5 O 2 Ferroelectric FET Nonvolatile Memory Performance

    Kai Ni;Pankaj Sharma;Jianchi Zhang;Matthew Jerry

  • A comprehensive model for PMOS NBTI degradation: Recent progress.

    Muhammad Ashraful Alam;Haldun Kufluoglu;D. Varghese;D. Varghese;S. Mahapatra

  • A Comparative Study of Different Physics-Based NBTI Models

    S. Mahapatra;N. Goel;S. Desai;S. Gupta

  • Recent Issues in Negative-Bias Temperature Instability: Initial Degradation, Field Dependence of Interface Trap Generation, Hole Trapping Effects, and Relaxation

    A.E. Islam;H. Kufluoglu;D. Varghese;S. Mahapatra

  • Investigation and modeling of interface and bulk trap generation during negative bias temperature instability of p-MOSFETs

    S. Mahapatra;P.B. Kumar;M.A. Alam

  • On the generation and recovery of interface traps in MOSFETs subjected to NBTI, FN, and HCI stress

    S. Mahapatra;D. Saha;D. Varghese;P.B. Kumar

  • On the Physical Mechanism of NBTI in Silicon Oxynitride p-MOSFETs: Can Differences in Insulator Processing Conditions Resolve the Interface Trap Generation versus Hole Trapping Controversy?

    S. Mahapatra;K. Ahmed;D. Varghese;A.E. Islam

  • A critical re-evaluation of the usefulness of R-D framework in predicting NBTI stress and recovery

    S. Mahapatra;A. E. Islam;S. Deora;V. D. Maheta

  • On the dispersive versus arrhenius temperature activation of nbti time evolution in plasma nitrided gate oxides: measurements, theory, and implications

    D. Varghese;D. Saha;S. Mahapatra;K. Ahmed

  • Controversial issues in negative bias temperature instability

    James H. Stathis;Souvik Mahapatra;Tibor Grasser

  • BTI Analysis Tool—Modeling of NBTI DC, AC Stress and Recovery Time Kinetics, Nitrogen Impact, and EOL Estimation

    Narendra Parihar;Nilesh Goel;Subhadeep Mukhopadhyay;Souvik Mahapatra

  • A consistent physical framework for N and P BTI in HKMG MOSFETs

    Kaustubh Joshi;Subhadeep Mukhopadhyay;Nilesh Goel;Souvik Mahapatra

  • Isolation of NBTI Stress Generated Interface Trap and Hole-Trapping Components in PNO p-MOSFETs

    S. Mahapatra;V.D. Maheta;A.E. Islam;M.A. Alam

  • Mechanism of negative bias temperature instability in CMOS devices: degradation, recovery and impact of nitrogen

    S. Mahapatra;P. Bharath Kumar;T.R. Dalei;D. Sana

  • Negative bias temperature instability in CMOS devices

    S. Mahapatra;M. A. Alam;P. Bharath Kumar;T. R. Dalei

  • Device scaling effects on hot-carrier induced interface and oxide-trapped charge distributions in MOSFETs

    S. Mahapatra;C.D. Parikh;V.R. Rao;C.R. Viswanathan

  • A predictive reliability model for PMOS bias temperature degradation

    S. Mahapatra;M.A. Alam

  • Hole energy dependent interface trap generation in MOSFET Si/SiO/sub 2/ interface

    D. Varghese;S. Mahapatra;M.A. Alam

  • CHISEL flash EEPROM. I. Performance and scaling

    S. Mahapatra;S. Shukuri;J. Bude

  • Defect Generation in p-MOSFETs Under Negative-Bias Stress: An Experimental Perspective

    S. Mahapatra;M.A. Alam

Frequent Co-Authors

Muhammad A. Alam
Muhammad A. Alam Purdue University West Lafayette
V. Ramgopal Rao
V. Ramgopal Rao Indian Institute of Technology Bombay
Suman Datta
Suman Datta Georgia Institute of Technology
James H. Stathis
James H. Stathis IBM (United States)
Jorg Henkel
Jorg Henkel Karlsruhe Institute of Technology
Jason C. S. Woo
Jason C. S. Woo University of California, Los Angeles
Saurabh Lodha
Saurabh Lodha Indian Institute of Technology Bombay
Kin Leong Pey
Kin Leong Pey Singapore University of Technology and Design
Yogesh Singh Chauhan
Yogesh Singh Chauhan Indian Institute of Technology Kanpur

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