World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
43
Citations
7843
World Ranking
3888
National Ranking
1400

Jason C. S. Woo publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Jason C. S. Woo sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 267 publications — 49th percentile

49% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Jason C. S. Woo D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Jason C. S. Woo sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 43 D-Index — 45th percentile

45% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Jason C. S. Woo is affiliated with the University of California, Los Angeles in the United States. Their research spans the fields of Engineering and Neuroscience, with a focus on Electrical and Electronic Engineering, Cognitive Neuroscience, Biomedical Engineering, Condensed Matter Physics, and Electronic, Optical and Magnetic Materials.

Their work primarily addresses topics such as advancements in semiconductor devices and circuit design, semiconductor materials and devices, neural and behavioral psychology studies, nanowire synthesis and applications, integrated circuits and semiconductor failure analysis, memory processes and influences, and EEG and brain-computer interfaces.

Jason C. S. Woo has contributed to several recent scientific papers, including:

  • Vertical P-TFET With a P-Type SiGe Pocket (2020), published in IEEE Transactions on Electron Devices
  • Source/Drain Extension Doping Engineering for Variability Suppression and Performance Enhancement in 3-nm Node FinFETs (2021), published in IEEE Transactions on Electron Devices
  • Tracing the emergence of the memorability benefit (2023), published in Cognition
  • Selective-Area Growth of Hexagonal-to-Cubic GaN as an n-Type Metal-Oxide-Semiconductor Field-Effect Transistor Drain on a Nanogrooved Si(100) Substrate (2024), published in Crystal Growth & Design
  • Tracing the Emergence of the Memorability Benefit (2022), published in SSRN Electronic Journal

Frequent co-authors collaborating with Jason C. S. Woo include:

  • Weicong Li
  • Greer Gillies
  • Dirk B. Walther
  • Jonathan S. Cant
  • Keisuke Fukuda

The most common publication venues for their work are:

  • IEEE Transactions on Electron Devices
  • Cognition
  • Crystal Growth & Design
  • SSRN Electronic Journal

Jason C. S. Woo's research intersects multiple disciplines, underpinning the development and understanding of semiconductor technologies as well as exploring cognitive and neural processes related to memory and brain-computer interfaces.

Best Publications

  • The impact of high-/spl kappa/ gate dielectrics and metal gate electrodes on sub-100 nm MOSFETs

    B. Cheng;M. Cao;R. Rao;A. Inani

  • The Tunnel Source (PNPN) n-MOSFET: A Novel High Performance Transistor

    V. Nagavarapu;R. Jhaveri;J.C.S. Woo

  • Effect of Pocket Doping and Annealing Schemes on the Source-Pocket Tunnel Field-Effect Transistor

    R Jhaveri;V Nagavarapu;J C S Woo

  • A MEMS based amperometric detector for E. coli bacteria using self-assembled monolayers.

    Jen-Jr Gau;Esther H Lan;Bruce Dunn;Chih-Ming Ho

  • High-gain lateral bipolar action in a MOSFET structure

    S. Verdonckt-Vandebroek;S.S. Wong;J.C.S. Woo;P.K. Ko

  • Enhancement-mode quantum-well Ge/sub x/Si/sub 1-x /PMOS

    D.K. Nayak;J.C.S. Woo;J.S. Park;K. Wang

  • Lifetime of photogenerated carriers in silicon-on-insulator rib waveguides

    D. Dimitropoulos;R. Jhaveri;R. Claps;J. C. S. Woo

  • Salicidation process using NiSi and its device application

    F. Deng;R. A. Johnson;P. M. Asbeck;S. S. Lau

  • High-Mobility p-Channel Metal-Oxide-Semiconductor Field-Effect-Transistor on Strained Si

    Deepak K. Nayak;Jason C. S. Woo;Jin S. Park;Kang L. Wang

  • Advanced source/drain engineering for box-shaped ultrashallow junction formation using laser annealing and pre-amorphization implantation in sub-100-nm SOI CMOS

    Seong-Dong Kim;Cheol-Min Park;J.C.S. Woo

  • Complementary field effect transistors having strained superlattice structure

    Kang L. Wang;Jason C. Woo

  • Improved Subthreshold and Output Characteristics of Source-Pocket Si Tunnel FET by the Application of Laser Annealing

    Hsu-Yu Chang;B. Adams;Po-Yen Chien;Jiping Li

  • Large scale pattern graphene electrode for high performance in transparent organic single crystal field-effect transistors.

    Wei Liu;Biyun Li Jackson;Jing Zhu;Cong-Qin Miao

  • TCAD-based statistical analysis and modeling of gate line-edge roughness effect on nanoscale MOS transistor performance and scaling

    Seong-Dong Kim;H. Wada;J.C.S. Woo

  • Advanced model and analysis of series resistance for CMOS scaling into nanometer regime. II. Quantitative analysis

    Seong-Dong Kim;Cheol-Min Park;J.C.S. Woo

  • Advanced model and analysis of series resistance for CMOS scaling into nanometer regime. I. Theoretical derivation

    Seong-Dong Kim;Cheol-Min Park;J.C.S. Woo

  • Asymmetric Schottky Tunneling Source SOI MOSFET Design for Mixed-Mode Applications

    R. Jhaveri;V. Nagavarapu;J.C.S. Woo

  • Comparison of NMOS and PMOS hot carrier effects from 300 to 77 K

    M. Song;K.P. MacWilliams;J.C.S. Woo

  • Rapid isothermal processing of strained GeSi layers

    D.K. Nayak;K. Kamjoo;J.S. Park;J.C.S. Woo

  • Contact resistance in top-gated graphene field-effect transistors

    Bo-Chao Huang;Ming Zhang;Yanjie Wang;Jason Woo

Frequent Co-Authors

Kang L. Wang
Kang L. Wang University of California, Los Angeles
Ya-Hong Xie
Ya-Hong Xie University of California, Los Angeles
V. Ramgopal Rao
V. Ramgopal Rao Indian Institute of Technology Bombay
Roland Scholz
Roland Scholz Max Planck Society
Souvik Mahapatra
Souvik Mahapatra Indian Institute of Technology Bombay
James D. Plummer
James D. Plummer Stanford University
Cheol-Min Park
Cheol-Min Park Kumoh National Institute of Technology
Chih-Kong Ken Yang
Chih-Kong Ken Yang University of California, Los Angeles
Subramanian S. Iyer
Subramanian S. Iyer University of California, Los Angeles
Eduard A. Cartier
Eduard A. Cartier IBM (United States)

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