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Jason C. S. Woo

D-Index & Metrics

Discipline name D-Index World Ranking Current World Ranking National Ranking Current National Ranking Publications Citations
Electronics and Electrical Engineering 43 3888 3733 1400 1308 267 7843

Jason C. S. Woo publications per year

The chart shows the history of publications by Jason C. S. Woo between 1980 and 2024, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. Jason C. S. Woo published across 45 years, from 1980 to 2024, averaging 6.4 papers a year. Output peaked at 23 publications in 1999. 2 of the 286 publications appeared in the last two years.

No. of publications
5 10 15 20
Bar chart. Horizontal axis: year, 1980 to 2024. Vertical axis: number of publications, 0 to 23. Peak 23 publications in 1999. 1980: 1 publication 1981: 1 publication 1982: 0 publications 1983: 0 publications 1984: 0 publications 1985: 0 publications 1986: 1 publication 1987: 2 publications 1988: 2 publications 1989: 2 publications 1990: 10 publications 1991: 14 publications 1992: 11 publications 1993: 9 publications 1994: 10 publications 1995: 5 publications 1996: 14 publications 1997: 13 publications 1998: 15 publications 1999: 23 publications 2000: 10 publications 2001: 13 publications 2002: 12 publications 2003: 6 publications 2004: 11 publications 2005: 19 publications 2006: 9 publications 2007: 5 publications 2008: 4 publications 2009: 7 publications 2010: 13 publications 2011: 7 publications 2012: 5 publications 2013: 3 publications 2014: 1 publication 2015: 4 publications 2016: 6 publications 2017: 5 publications 2018: 4 publications 2019: 1 publication 2020: 1 publication 2021: 3 publications 2022: 2 publications 2023: 1 publication 2024: 1 publication
1980 2024

286 publications in total across all disciplines

View publications per year as a table
Jason C. S. Woo: publications per year, 1980 to 2024
Year Publications
1980 1
1981 1
1982 0
1983 0
1984 0
1985 0
1986 1
1987 2
1988 2
1989 2
1990 10
1991 14
1992 11
1993 9
1994 10
1995 5
1996 14
1997 13
1998 15
1999 23
2000 10
2001 13
2002 12
2003 6
2004 11
2005 19
2006 9
2007 5
2008 4
2009 7
2010 13
2011 7
2012 5
2013 3
2014 1
2015 4
2016 6
2017 5
2018 4
2019 1
2020 1
2021 3
2022 2
2023 1
2024 1
Total 286
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Jason C. S. Woo publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Jason C. S. Woo sits on this spectrum.

No. of scientists
100 200 300 400
Bar chart with 53 bars. Horizontal axis: publications, 34–53 to 1,065+. Vertical axis: number of scientists, 0 to 445. Most scientists, 445, have 174–193 publications. The last bar groups every scientist with 1,065 publications or more. The highlighted bar, 254–273 publications, is where this scientist sits. 34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34–53 publications 1,065+

This scientist: 267 publications — 49th percentile

49% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

View publications distribution as a table
Number of Electronics and Electrical Engineering scientists by publication count, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
Publications Scientists This scientist
34–53 24
54–73 52
74–93 114
94–113 203
114–133 269
134–153 355
154–173 403
174–193 445
194–213 430
214–233 431
234–253 399
254–273 366 267
274–293 335
294–313 300
314–333 276
334–353 250
354–373 214
374–393 187
394–413 152
414–433 169
434–453 147
454–473 111
474–493 117
494–513 103
514–533 99
534–553 92
554–573 75
574–593 58
594–613 69
614–633 50
634–653 62
654–673 54
674–693 44
694–713 37
714–733 28
734–753 26
754–773 26
774–793 19
794–813 23
814–833 20
834–853 16
854–873 20
874–893 11
894–913 11
914–933 16
934–953 13
954–973 10
974–993 11
994–1,013 9
1,014–1,033 9
1,034–1,053 10
1,054–1,064 6
1,065+ 99
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Jason C. S. Woo D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Jason C. S. Woo sits on this spectrum.

No. of scientists
50 100 150 200 250
Bar chart with 82 bars. Horizontal axis: D-Index, 30 to 111+. Vertical axis: number of scientists, 0 to 263. Most scientists, 263, have 32 D-Index. The last bar groups every scientist with 111 D-Index or more. The highlighted bar, 43 D-Index, is where this scientist sits. 30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 43 D-Index — 45th percentile

45% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

View D-Index distribution as a table
Number of Electronics and Electrical Engineering scientists by D-index, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
D-Index Scientists This scientist
30 178
31 257
32 263
33 262
34 244
35 236
36 211
37 220
38 214
39 214
40 205
41 187
42 194
43 201 43
44 155
45 189
46 148
47 160
48 134
49 130
50 141
51 156
52 108
53 130
54 112
55 97
56 111
57 102
58 108
59 120
60 103
61 93
62 92
63 74
64 77
65 73
66 64
67 69
68 60
69 39
70 57
71 59
72 46
73 49
74 38
75 35
76 32
77 35
78 31
79 22
80 34
81 31
82 34
83 23
84 18
85 30
86 19
87 19
88 20
89 8
90 17
91 7
92 14
93 9
94 15
95 10
96 12
97 10
98 10
99 12
100 16
101 5
102 7
103 7
104 8
105 9
106 13
107 4
108 5
109 10
110 8
111+ 96
Download as CSV

Overview

Jason C. S. Woo is affiliated with the University of California, Los Angeles in the United States. Their research spans the fields of Engineering and Neuroscience, with a focus on Electrical and Electronic Engineering, Cognitive Neuroscience, Biomedical Engineering, Condensed Matter Physics, and Electronic, Optical and Magnetic Materials.

Their work primarily addresses topics such as advancements in semiconductor devices and circuit design, semiconductor materials and devices, neural and behavioral psychology studies, nanowire synthesis and applications, integrated circuits and semiconductor failure analysis, memory processes and influences, and EEG and brain-computer interfaces.

Jason C. S. Woo has contributed to several recent scientific papers, including:

  • Vertical P-TFET With a P-Type SiGe Pocket (2020), published in IEEE Transactions on Electron Devices
  • Source/Drain Extension Doping Engineering for Variability Suppression and Performance Enhancement in 3-nm Node FinFETs (2021), published in IEEE Transactions on Electron Devices
  • Tracing the emergence of the memorability benefit (2023), published in Cognition
  • Selective-Area Growth of Hexagonal-to-Cubic GaN as an n-Type Metal-Oxide-Semiconductor Field-Effect Transistor Drain on a Nanogrooved Si(100) Substrate (2024), published in Crystal Growth & Design
  • Tracing the Emergence of the Memorability Benefit (2022), published in SSRN Electronic Journal

Frequent co-authors collaborating with Jason C. S. Woo include:

  • Weicong Li
  • Greer Gillies
  • Dirk B. Walther
  • Jonathan S. Cant
  • Keisuke Fukuda

The most common publication venues for their work are:

  • IEEE Transactions on Electron Devices
  • Cognition
  • Crystal Growth & Design
  • SSRN Electronic Journal

Jason C. S. Woo's research intersects multiple disciplines, underpinning the development and understanding of semiconductor technologies as well as exploring cognitive and neural processes related to memory and brain-computer interfaces.

Best Publications

  • The impact of high-/spl kappa/ gate dielectrics and metal gate electrodes on sub-100 nm MOSFETs

    B. Cheng;M. Cao;R. Rao;A. Inani

  • The Tunnel Source (PNPN) n-MOSFET: A Novel High Performance Transistor

    V. Nagavarapu;R. Jhaveri;J.C.S. Woo

  • Effect of Pocket Doping and Annealing Schemes on the Source-Pocket Tunnel Field-Effect Transistor

    R Jhaveri;V Nagavarapu;J C S Woo

  • A MEMS based amperometric detector for E. coli bacteria using self-assembled monolayers.

    Jen-Jr Gau;Esther H Lan;Bruce Dunn;Chih-Ming Ho

  • High-gain lateral bipolar action in a MOSFET structure

    S. Verdonckt-Vandebroek;S.S. Wong;J.C.S. Woo;P.K. Ko

  • Enhancement-mode quantum-well Ge/sub x/Si/sub 1-x /PMOS

    D.K. Nayak;J.C.S. Woo;J.S. Park;K. Wang

  • Lifetime of photogenerated carriers in silicon-on-insulator rib waveguides

    D. Dimitropoulos;R. Jhaveri;R. Claps;J. C. S. Woo

  • Salicidation process using NiSi and its device application

    F. Deng;R. A. Johnson;P. M. Asbeck;S. S. Lau

  • High-Mobility p-Channel Metal-Oxide-Semiconductor Field-Effect-Transistor on Strained Si

    Deepak K. Nayak;Jason C. S. Woo;Jin S. Park;Kang L. Wang

  • Advanced source/drain engineering for box-shaped ultrashallow junction formation using laser annealing and pre-amorphization implantation in sub-100-nm SOI CMOS

    Seong-Dong Kim;Cheol-Min Park;J.C.S. Woo

  • Complementary field effect transistors having strained superlattice structure

    Kang L. Wang;Jason C. Woo

  • Improved Subthreshold and Output Characteristics of Source-Pocket Si Tunnel FET by the Application of Laser Annealing

    Hsu-Yu Chang;B. Adams;Po-Yen Chien;Jiping Li

  • Large scale pattern graphene electrode for high performance in transparent organic single crystal field-effect transistors.

    Wei Liu;Biyun Li Jackson;Jing Zhu;Cong-Qin Miao

  • TCAD-based statistical analysis and modeling of gate line-edge roughness effect on nanoscale MOS transistor performance and scaling

    Seong-Dong Kim;H. Wada;J.C.S. Woo

  • Advanced model and analysis of series resistance for CMOS scaling into nanometer regime. II. Quantitative analysis

    Seong-Dong Kim;Cheol-Min Park;J.C.S. Woo

  • Advanced model and analysis of series resistance for CMOS scaling into nanometer regime. I. Theoretical derivation

    Seong-Dong Kim;Cheol-Min Park;J.C.S. Woo

  • Asymmetric Schottky Tunneling Source SOI MOSFET Design for Mixed-Mode Applications

    R. Jhaveri;V. Nagavarapu;J.C.S. Woo

  • Comparison of NMOS and PMOS hot carrier effects from 300 to 77 K

    M. Song;K.P. MacWilliams;J.C.S. Woo

  • Rapid isothermal processing of strained GeSi layers

    D.K. Nayak;K. Kamjoo;J.S. Park;J.C.S. Woo

  • Contact resistance in top-gated graphene field-effect transistors

    Bo-Chao Huang;Ming Zhang;Yanjie Wang;Jason Woo

Frequent Co-Authors

Kang L. Wang
Kang L. Wang University of California, Los Angeles
Ya-Hong Xie
Ya-Hong Xie University of California, Los Angeles
V. Ramgopal Rao
V. Ramgopal Rao Indian Institute of Technology Bombay
Roland Scholz
Roland Scholz Max Planck Society
Souvik Mahapatra
Souvik Mahapatra Indian Institute of Technology Bombay
James D. Plummer
James D. Plummer Stanford University
Cheol-Min Park
Cheol-Min Park Kumoh National Institute of Technology
Chih-Kong Ken Yang
Chih-Kong Ken Yang University of California, Los Angeles
Subramanian S. Iyer
Subramanian S. Iyer University of California, Los Angeles
Eduard A. Cartier
Eduard A. Cartier IBM (United States)

External Links

Personal website of Jason C. S. Woo Google Scholar page

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Chenming Hu

Chenming Hu

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Publications: 48

Mridula Gupta

Mridula Gupta

University of Delhi

Publications: 39

Wendell P. Noble

Wendell P. Noble

Micron (United States)

Publications: 38

Sanjay K. Banerjee

Sanjay K. Banerjee

The University of Texas at Austin

Publications: 33

Eugene A. Fitzgerald

Eugene A. Fitzgerald

MIT

Publications: 33

Rishu Chaujar

Rishu Chaujar

Delhi Technological University

Publications: 32

Yee-Chia Yeo

Yee-Chia Yeo

National University of Singapore

Publications: 29

Eddy Simoen

Eddy Simoen

Ghent University

Publications: 28

Matthew T. Currie

Matthew T. Currie

Morgan, Lewis & Bockius LLP

Publications: 25

Ru Huang

Ru Huang

Peking University

Publications: 24

Denis Flandre

Denis Flandre

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Publications: 23

Mansun Chan

Mansun Chan

Hong Kong University of Science and Technology

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