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Materials Science

D-Index
59
Citations
14419
World Ranking
7299
National Ranking
1809

Research.com Recognitions

  • 2014 - IEEE Fellow For contributions to strained-silicon materials and devices

Overview

Ya-Hong Xie is affiliated with the University of California, Los Angeles in the United States. Their research primarily spans the fields of materials science and engineering, with a focus on interdisciplinary subfields such as materials chemistry, electrical and electronic engineering, electronic, optical and magnetic materials, biomedical engineering, and molecular biology.

The scientist's publication record includes studies addressing topics such as gold and silver nanoparticles synthesis and applications, two-dimensional materials and their applications, perovskite materials and applications, extracellular vesicles in disease, ferroelectric and negative capacitance devices, MXene and MAX phase materials, and GaN-based semiconductor devices and materials.

Notable recent publications include:

  • Toward a Reliable Synaptic Simulation Using Al-Doped HfO2 RRAM, 2020, ACS Applied Materials & Interfaces
  • Hybrid System Combining Two-Dimensional Materials and Ferroelectrics and Its Application in Photodetection, 2021, ACS Nano
  • Phase Change Random Access Memory for Neuro-Inspired Computing, 2021, Advanced Electronic Materials
  • Highly heterogeneous epitaxy of flexoelectric BaTiO3-δ membrane on Ge, 2022, Nature Communications
  • Multiwavelength High-Detectivity MoS2 Photodetectors with Schottky Contacts, 2022, ACS Nano

Ya-Hong Xie frequently collaborates with several coauthors, including Gang Niu, Wei Ren, Jinyan Zhao, Yankun Wang, and He-Ping Wu, with collaboration counts ranging from six to eleven publications each.

The majority of Xie's research outputs have appeared in journals such as Biosensors, SSRN Electronic Journal, ACS Applied Materials & Interfaces, ACS Nano, and IEEE Electron Device Letters, reflecting consistent contributions to these publication venues.

In 2014, the scientist was recognized as an IEEE Fellow for contributions to strained-silicon materials and devices, highlighting their involvement in semiconductor material research.

Best Publications

  • Totally relaxed GexSi1−x layers with low threading dislocation densities grown on Si substrates

    E. A. Fitzgerald;Y.‐H. Xie;M. L. Green;D. Brasen

  • Relaxed GexSi1−x structures for III–V integration with Si and high mobility two‐dimensional electron gases in Si

    E. A. Fitzgerald;Y.‐H. Xie;D. Monroe;P. J. Silverman

  • Impurity enhancement of the 1.54‐μm Er3+ luminescence in silicon

    J. Michel;J. L. Benton;R. F. Ferrante;D. C. Jacobson

  • Light Emission from Silicon

    S. S. Iyer;Y. H. Xie

  • Size, shape, and composition of luminescent species in oxidized Si nanocrystals and H-passivated porous Si

    S. Schuppler;S. L. Friedman;M. A. Marcus;D. L. Adler

  • Luminescence and structural study of porous silicon films

    Y. H. Xie;W. L. Wilson;F. M. Ross;J. A. Mucha

  • Dimensions of luminescent oxidized and porous silicon structures

    S. Schuppler;S. Schuppler;S. L. Friedman;S. L. Friedman;M. A. Marcus;M. A. Marcus;D. L. Adler;D. L. Adler

  • Extremely high electron mobility in Si/GexSi1−x structures grown by molecular beam epitaxy

    Y. J. Mii;Y. H. Xie;E. A. Fitzgerald;Don Monroe

  • Semiconductor surface roughness: Dependence on sign and magnitude of bulk strain.

    Y. H. Xie;G. H. Gilmer;C. Roland;P. J. Silverman

  • Synthesis of the 0D/3D CuO/ZnO Heterojunction with Enhanced Photocatalytic Activity

    Linyu Zhu;Hong Li;Zirui Liu;Pengfei Xia

  • Very high mobility two‐dimensional hole gas in Si/GexSi1−x/Ge structures grown by molecular beam epitaxy

    Y. H. Xie;Don Monroe;E. A. Fitzgerald;P. J. Silverman

  • Surface morphology of related GexSi1−x films

    Julia Wan-Ping Hsu;E. A. Fitzgerald;Y. H. Xie;P. J. Silverman

  • Ultra-Sensitive Graphene-Plasmonic Hybrid Platform for Label-Free Detection

    Pu Wang;Owen Liang;Wei Zhang;Thomas Schroeder

  • Semiconductor heterostructure devices with strained semiconductor layers

    Daniel Brasen;Eugene A. Fitzgerald;Martin L. Green;Donald P. Monroe

  • MICROSTRUCTURE OF ERBIUM-IMPLANTED SI

    D. J. Eaglesham;J. Michel;E. A. Fitzgerald;D. C. Jacobson

  • Vertical Graphene Base Transistor

    Wolfgang Mehr;J. Christoph Scheytt;Jarek Dabrowski;Gunther Lippert

  • Label-Free SERS Selective Detection of Dopamine and Serotonin Using Graphene-Au Nanopyramid Heterostructure.

    Pu Wang;Ming Xia;Owen Liang;Ke Sun

  • Vertical Graphene Base Transistor

    W. Mehr;J. Dabrowski;J. C. Scheytt;G. Lippert

  • Relaxed template for fabricating regularly distributed quantum dot arrays

    Y. H. Xie;S. B. Samavedam;M. Bulsara;T. A. Langdo

  • The electrical and defect properties of erbium‐implanted silicon

    J. L. Benton;J. Michel;L. C. Kimerling;D. C. Jacobson

Frequent Co-Authors

Thomas P. Russell
Thomas P. Russell University of Massachusetts Amherst
B. E. Weir
B. E. Weir Broadcom (United States)
Kang L. Wang
Kang L. Wang University of California, Los Angeles
Jason C. S. Woo
Jason C. S. Woo University of California, Los Angeles
D. C. Tsui
D. C. Tsui Princeton University
Jianlin Liu
Jianlin Liu University of California, Riverside
King-Ning Tu
King-Ning Tu City University of Hong Kong

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